JP6299757B2 - 太陽電池の製造方法 - Google Patents

太陽電池の製造方法 Download PDF

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Publication number
JP6299757B2
JP6299757B2 JP2015518131A JP2015518131A JP6299757B2 JP 6299757 B2 JP6299757 B2 JP 6299757B2 JP 2015518131 A JP2015518131 A JP 2015518131A JP 2015518131 A JP2015518131 A JP 2015518131A JP 6299757 B2 JP6299757 B2 JP 6299757B2
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diffusion layer
type
substrate
outer peripheral
semiconductor substrate
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Japanese (ja)
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JPWO2014188773A1 (ja
Inventor
信太郎 月形
信太郎 月形
渡部　武紀
武紀 渡部
大塚　寛之
寛之 大塚
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Shin Etsu Chemical Co Ltd
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Shin Etsu Chemical Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)
JP2015518131A 2013-05-21 2014-03-24 太陽電池の製造方法 Active JP6299757B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013107203 2013-05-21
JP2013107203 2013-05-21
PCT/JP2014/058064 WO2014188773A1 (fr) 2013-05-21 2014-03-24 Procédé de fabrication de cellule solaire, et cellule solaire

Publications (2)

Publication Number Publication Date
JPWO2014188773A1 JPWO2014188773A1 (ja) 2017-02-23
JP6299757B2 true JP6299757B2 (ja) 2018-03-28

Family

ID=51933339

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015518131A Active JP6299757B2 (ja) 2013-05-21 2014-03-24 太陽電池の製造方法

Country Status (3)

Country Link
JP (1) JP6299757B2 (fr)
TW (1) TWI624078B (fr)
WO (1) WO2014188773A1 (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102400911B1 (ko) 2016-06-13 2022-05-20 신에쓰 가가꾸 고교 가부시끼가이샤 태양전지, 태양전지의 제조 방법 및 태양전지의 제조 시스템
US11282815B2 (en) 2020-01-14 2022-03-22 Micron Technology, Inc. Methods of forming microelectronic devices, and related microelectronic devices and electronic systems
US11557569B2 (en) 2020-06-18 2023-01-17 Micron Technology, Inc. Microelectronic devices including source structures overlying stack structures, and related electronic systems
US11699652B2 (en) 2020-06-18 2023-07-11 Micron Technology, Inc. Microelectronic devices and electronic systems
US11380669B2 (en) * 2020-06-18 2022-07-05 Micron Technology, Inc. Methods of forming microelectronic devices
US11705367B2 (en) 2020-06-18 2023-07-18 Micron Technology, Inc. Methods of forming microelectronic devices, and related microelectronic devices, memory devices, electronic systems, and additional methods
US11563018B2 (en) 2020-06-18 2023-01-24 Micron Technology, Inc. Microelectronic devices, and related methods, memory devices, and electronic systems
US11825658B2 (en) 2020-08-24 2023-11-21 Micron Technology, Inc. Methods of forming microelectronic devices and memory devices
US11417676B2 (en) 2020-08-24 2022-08-16 Micron Technology, Inc. Methods of forming microelectronic devices and memory devices, and related microelectronic devices, memory devices, and electronic systems
US11751408B2 (en) 2021-02-02 2023-09-05 Micron Technology, Inc. Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4989059A (en) * 1988-05-13 1991-01-29 Mobil Solar Energy Corporation Solar cell with trench through pn junction
JPWO2006087786A1 (ja) * 2005-02-17 2008-07-03 三菱電機株式会社 太陽電池の製造方法
KR20090091562A (ko) * 2008-02-25 2009-08-28 엘지전자 주식회사 태양전지 및 그 제조방법
TWI398958B (zh) * 2010-01-08 2013-06-11 Tainergy Tech Co Ltd 太陽能電池以及其製造方法
JP2011151192A (ja) * 2010-01-21 2011-08-04 Sharp Corp 太陽電池セル、インターコネクタ付き太陽電池セルおよびその製造方法
JP5436276B2 (ja) * 2010-03-11 2014-03-05 三菱電機株式会社 太陽電池の製造方法
US8071418B2 (en) * 2010-06-03 2011-12-06 Suniva, Inc. Selective emitter solar cells formed by a hybrid diffusion and ion implantation process
WO2012008061A1 (fr) * 2010-07-16 2012-01-19 シラクセル株式会社 Cellule solaire au silicium comprenant une couche de diffusion en bore, ainsi que son procédé de fabrication
CN102332488A (zh) * 2011-05-25 2012-01-25 湖南红太阳光电科技有限公司 一种用于晶体硅太阳能电池激光边缘隔离的方法和装置

Also Published As

Publication number Publication date
TWI624078B (zh) 2018-05-11
JPWO2014188773A1 (ja) 2017-02-23
TW201511319A (zh) 2015-03-16
WO2014188773A1 (fr) 2014-11-27

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