JP6297597B2 - 調整可能な電極を有する堆積源 - Google Patents

調整可能な電極を有する堆積源 Download PDF

Info

Publication number
JP6297597B2
JP6297597B2 JP2015555681A JP2015555681A JP6297597B2 JP 6297597 B2 JP6297597 B2 JP 6297597B2 JP 2015555681 A JP2015555681 A JP 2015555681A JP 2015555681 A JP2015555681 A JP 2015555681A JP 6297597 B2 JP6297597 B2 JP 6297597B2
Authority
JP
Japan
Prior art keywords
substrate
gas
coating drum
gas separation
separation unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2015555681A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016514198A (ja
JP2016514198A5 (enExample
Inventor
ヴォルフガング ブッシュベック，
ヴォルフガング ブッシュベック，
フロリアン リース，
フロリアン リース，
トビアス ストーレイ，
トビアス ストーレイ，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2016514198A publication Critical patent/JP2016514198A/ja
Publication of JP2016514198A5 publication Critical patent/JP2016514198A5/ja
Application granted granted Critical
Publication of JP6297597B2 publication Critical patent/JP6297597B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H01J37/3277—Continuous moving of continuous material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
JP2015555681A 2013-01-31 2014-01-28 調整可能な電極を有する堆積源 Active JP6297597B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP13153493.5 2013-01-31
EP13153493.5A EP2762607B1 (en) 2013-01-31 2013-01-31 Deposition source with adjustable electrode
PCT/EP2014/051632 WO2014118177A1 (en) 2013-01-31 2014-01-28 Deposition source with adjustable electrode

Publications (3)

Publication Number Publication Date
JP2016514198A JP2016514198A (ja) 2016-05-19
JP2016514198A5 JP2016514198A5 (enExample) 2017-03-09
JP6297597B2 true JP6297597B2 (ja) 2018-03-20

Family

ID=47747375

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015555681A Active JP6297597B2 (ja) 2013-01-31 2014-01-28 調整可能な電極を有する堆積源

Country Status (7)

Country Link
US (1) US20140212599A1 (enExample)
EP (1) EP2762607B1 (enExample)
JP (1) JP6297597B2 (enExample)
KR (1) KR102033673B1 (enExample)
CN (1) CN104968830B (enExample)
TW (1) TWI619827B (enExample)
WO (1) WO2014118177A1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104040023B (zh) * 2012-01-16 2016-04-13 株式会社爱发科 成膜装置
EP2762609B1 (en) * 2013-01-31 2019-04-17 Applied Materials, Inc. Apparatus and method for depositing at least two layers on a substrate
EP2762608B1 (en) * 2013-01-31 2019-10-02 Applied Materials, Inc. Gas separation by adjustable separation wall
EP2784176B1 (en) * 2013-03-28 2018-10-03 Applied Materials, Inc. Deposition platform for flexible substrates
CN104695201B (zh) * 2015-03-10 2016-09-21 渤扬复合面料科技(昆山)有限公司 翻转式电极组纺织品大气等离子处理机构及双面处理机构
FR3035122B1 (fr) * 2015-04-20 2017-04-28 Coating Plasma Ind Procede de traitement de surface d'un film en mouvement et installation pour la mise en oeuvre de ce procede
CN108603291B (zh) * 2016-02-12 2023-11-14 应用材料公司 真空处理系统和其方法
CN105549340B (zh) * 2016-02-24 2017-10-24 上海大学 卷对卷柔性衬底光刻方法和装置
CN106373868B (zh) * 2016-10-10 2020-03-10 昆山龙腾光电股份有限公司 一种阵列基板的制造方法
EP4596776A3 (en) * 2019-02-19 2025-10-29 Xefco Pty Ltd System for treatment and/or coating of substrates
WO2021185444A1 (en) * 2020-03-18 2021-09-23 Applied Materials, Inc. Vacuum processing system for a flexible substrate, method of depositing a layer stack on a flexible substrate, and layer system
US11732345B2 (en) * 2020-06-04 2023-08-22 Applied Materials, Inc. Vapor deposition apparatus and method for coating a substrate in a vacuum chamber
US11905589B2 (en) * 2020-08-20 2024-02-20 Applied Materials, Inc. Material deposition apparatus having at least one heating assembly and method for pre- and/or post-heating a substrate
US20230137506A1 (en) * 2020-08-21 2023-05-04 Applied Materials, Inc. Processing system for processing a flexible substrate and method of measuring at least one of a property of a flexible substrate and a property of one or more coatings on the flexible substrate
CN116724142A (zh) * 2021-01-19 2023-09-08 芝浦机械株式会社 表面处理装置及表面处理方法
TWI788032B (zh) * 2021-09-28 2022-12-21 天虹科技股份有限公司 開合式遮蔽機構及具有開合式遮蔽機構的薄膜沉積機台
CN115874158B (zh) * 2021-09-28 2024-11-15 天虹科技股份有限公司 开合式遮蔽机构及薄膜沉积机台

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4039930A1 (de) * 1990-12-14 1992-06-17 Leybold Ag Vorrichtung fuer plasmabehandlung
DE69312989T2 (de) * 1992-03-13 1997-12-18 Matsushita Electric Ind Co Ltd Plasma-CVD-Anlage und entsprechendes Verfahren
JP3175894B2 (ja) * 1994-03-25 2001-06-11 株式会社半導体エネルギー研究所 プラズマ処理装置及びプラズマ処理方法
JPH09228054A (ja) * 1996-02-16 1997-09-02 Hitachi Ltd 磁気記録媒体およびその製造方法と製造装置
JPH116071A (ja) * 1997-06-12 1999-01-12 Sony Corp プラズマｃｖｄ法及びプラズマｃｖｄ装置
US6082292A (en) * 1999-01-05 2000-07-04 Wisconsin Alumni Research Foundation Sealing roller system for surface treatment gas reactors
KR20020080954A (ko) * 2001-04-18 2002-10-26 주성엔지니어링(주) 냉벽 화학기상증착 방법 및 장치
CH696013A5 (de) * 2002-10-03 2006-11-15 Tetra Laval Holdings & Finance Vorrichtung zur Behandlung eines bandförmigen Materials in einem Plasma-unterstützten Prozess.
JPWO2006093168A1 (ja) * 2005-03-04 2008-08-07 株式会社ユーテック Ｃｖｄ装置と、それを用いた多層膜形成方法と、それにより形成された多層膜
JP4747658B2 (ja) * 2005-04-22 2011-08-17 大日本印刷株式会社 成膜装置及び成膜方法
US7763114B2 (en) * 2005-12-28 2010-07-27 3M Innovative Properties Company Rotatable aperture mask assembly and deposition system
JP2008031521A (ja) * 2006-07-28 2008-02-14 Sony Corp ロールツーロール型のプラズマ真空処理装置
CN102027574B (zh) * 2008-02-08 2014-09-10 朗姆研究公司 等离子体处理室部件的保护性涂层及其使用方法
CN102197159B (zh) * 2008-11-05 2013-07-10 株式会社爱发科 卷绕式真空处理装置
JP2012518894A (ja) * 2009-02-02 2012-08-16 リンデール インコーポレイテッド 高密度コンデンサまたは他の顕微鏡的層を有する機械的デバイスの製造方法
JP5643528B2 (ja) * 2009-03-30 2014-12-17 東京エレクトロン株式会社 基板処理装置
JP5562723B2 (ja) * 2009-05-29 2014-07-30 富士フイルム株式会社 成膜方法、成膜装置、およびガスバリアフィルムの製造方法
US20110033638A1 (en) * 2009-08-10 2011-02-10 Applied Materials, Inc. Method and apparatus for deposition on large area substrates having reduced gas usage
EP2362001A1 (en) * 2010-02-25 2011-08-31 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Method and device for layer deposition
JP2011192664A (ja) * 2010-03-11 2011-09-29 Tokyo Electron Ltd プラズマエッチング方法及びプラズマエッチング装置
JP5831759B2 (ja) * 2011-04-28 2015-12-09 日東電工株式会社 真空成膜方法、及び該方法によって得られる積層体
WO2013103609A1 (en) * 2012-01-03 2013-07-11 Applied Materials, Inc. Advanced platform for passivating crystalline silicon solar cells
EP2762608B1 (en) * 2013-01-31 2019-10-02 Applied Materials, Inc. Gas separation by adjustable separation wall
EP2762609B1 (en) * 2013-01-31 2019-04-17 Applied Materials, Inc. Apparatus and method for depositing at least two layers on a substrate
EP2784176B1 (en) * 2013-03-28 2018-10-03 Applied Materials, Inc. Deposition platform for flexible substrates

Also Published As

Publication number Publication date
EP2762607A1 (en) 2014-08-06
EP2762607B1 (en) 2018-07-25
TW201441403A (zh) 2014-11-01
CN104968830A (zh) 2015-10-07
KR20150114974A (ko) 2015-10-13
KR102033673B1 (ko) 2019-10-17
JP2016514198A (ja) 2016-05-19
US20140212599A1 (en) 2014-07-31
CN104968830B (zh) 2018-09-21
WO2014118177A1 (en) 2014-08-07
TWI619827B (zh) 2018-04-01

Similar Documents

Publication Publication Date Title
JP6297597B2 (ja) 調整可能な電極を有する堆積源
JP7068766B2 (ja) 基板上に被膜を被覆する装置及び堆積装置の２つの堆積源間にガス分離を提供する方法
JP6706650B2 (ja) 共通の堆積プラットフォーム、処理ステーション、およびその動作方法
KR102032542B1 (ko) 가요성 기판들을 위한 증착 플랫폼 및 그 작동 방법
JP2016514197A5 (enExample)
JP2016514198A5 (enExample)

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170127

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170127

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170202

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170912

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20171207

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20180123

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20180221

R150 Certificate of patent or registration of utility model

Ref document number: 6297597

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350