CN104968830B - 具有可调整电极的沉积源 - Google Patents

具有可调整电极的沉积源 Download PDF

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Publication number
CN104968830B
CN104968830B CN201480006817.8A CN201480006817A CN104968830B CN 104968830 B CN104968830 B CN 104968830B CN 201480006817 A CN201480006817 A CN 201480006817A CN 104968830 B CN104968830 B CN 104968830B
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CN
China
Prior art keywords
substrate
coating drum
gas
deposition source
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201480006817.8A
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English (en)
Chinese (zh)
Other versions
CN104968830A (zh
Inventor
W·布施贝克
F·里斯
T·斯托利
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
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Applied Materials Inc
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Publication date
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Publication of CN104968830A publication Critical patent/CN104968830A/zh
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Publication of CN104968830B publication Critical patent/CN104968830B/zh
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H01J37/3277—Continuous moving of continuous material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
CN201480006817.8A 2013-01-31 2014-01-28 具有可调整电极的沉积源 Active CN104968830B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP13153493.5 2013-01-31
EP13153493.5A EP2762607B1 (en) 2013-01-31 2013-01-31 Deposition source with adjustable electrode
PCT/EP2014/051632 WO2014118177A1 (en) 2013-01-31 2014-01-28 Deposition source with adjustable electrode

Publications (2)

Publication Number Publication Date
CN104968830A CN104968830A (zh) 2015-10-07
CN104968830B true CN104968830B (zh) 2018-09-21

Family

ID=47747375

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480006817.8A Active CN104968830B (zh) 2013-01-31 2014-01-28 具有可调整电极的沉积源

Country Status (7)

Country Link
US (1) US20140212599A1 (enExample)
EP (1) EP2762607B1 (enExample)
JP (1) JP6297597B2 (enExample)
KR (1) KR102033673B1 (enExample)
CN (1) CN104968830B (enExample)
TW (1) TWI619827B (enExample)
WO (1) WO2014118177A1 (enExample)

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* Cited by examiner, † Cited by third party
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CN104040023B (zh) * 2012-01-16 2016-04-13 株式会社爱发科 成膜装置
EP2762609B1 (en) * 2013-01-31 2019-04-17 Applied Materials, Inc. Apparatus and method for depositing at least two layers on a substrate
EP2762608B1 (en) * 2013-01-31 2019-10-02 Applied Materials, Inc. Gas separation by adjustable separation wall
EP2784176B1 (en) * 2013-03-28 2018-10-03 Applied Materials, Inc. Deposition platform for flexible substrates
CN104695201B (zh) * 2015-03-10 2016-09-21 渤扬复合面料科技(昆山)有限公司 翻转式电极组纺织品大气等离子处理机构及双面处理机构
FR3035122B1 (fr) * 2015-04-20 2017-04-28 Coating Plasma Ind Procede de traitement de surface d'un film en mouvement et installation pour la mise en oeuvre de ce procede
CN108603291B (zh) * 2016-02-12 2023-11-14 应用材料公司 真空处理系统和其方法
CN105549340B (zh) * 2016-02-24 2017-10-24 上海大学 卷对卷柔性衬底光刻方法和装置
CN106373868B (zh) * 2016-10-10 2020-03-10 昆山龙腾光电股份有限公司 一种阵列基板的制造方法
EP4596776A3 (en) * 2019-02-19 2025-10-29 Xefco Pty Ltd System for treatment and/or coating of substrates
WO2021185444A1 (en) * 2020-03-18 2021-09-23 Applied Materials, Inc. Vacuum processing system for a flexible substrate, method of depositing a layer stack on a flexible substrate, and layer system
US11732345B2 (en) * 2020-06-04 2023-08-22 Applied Materials, Inc. Vapor deposition apparatus and method for coating a substrate in a vacuum chamber
US11905589B2 (en) * 2020-08-20 2024-02-20 Applied Materials, Inc. Material deposition apparatus having at least one heating assembly and method for pre- and/or post-heating a substrate
US20230137506A1 (en) * 2020-08-21 2023-05-04 Applied Materials, Inc. Processing system for processing a flexible substrate and method of measuring at least one of a property of a flexible substrate and a property of one or more coatings on the flexible substrate
CN116724142A (zh) * 2021-01-19 2023-09-08 芝浦机械株式会社 表面处理装置及表面处理方法
TWI788032B (zh) * 2021-09-28 2022-12-21 天虹科技股份有限公司 開合式遮蔽機構及具有開合式遮蔽機構的薄膜沉積機台
CN115874158B (zh) * 2021-09-28 2024-11-15 天虹科技股份有限公司 开合式遮蔽机构及薄膜沉积机台

Citations (4)

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US5399254A (en) * 1990-12-14 1995-03-21 Leybold Ag Apparatus for plasma treatment
CN101853767A (zh) * 2009-03-30 2010-10-06 东京毅力科创株式会社 基板处理装置
CN102027574A (zh) * 2008-02-08 2011-04-20 朗姆研究公司 等离子体处理室部件的保护性涂层及其使用方法
CN102197159A (zh) * 2008-11-05 2011-09-21 株式会社爱发科 卷绕式真空处理装置

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JP3175894B2 (ja) * 1994-03-25 2001-06-11 株式会社半導体エネルギー研究所 プラズマ処理装置及びプラズマ処理方法
JPH09228054A (ja) * 1996-02-16 1997-09-02 Hitachi Ltd 磁気記録媒体およびその製造方法と製造装置
JPH116071A (ja) * 1997-06-12 1999-01-12 Sony Corp プラズマｃｖｄ法及びプラズマｃｖｄ装置
US6082292A (en) * 1999-01-05 2000-07-04 Wisconsin Alumni Research Foundation Sealing roller system for surface treatment gas reactors
KR20020080954A (ko) * 2001-04-18 2002-10-26 주성엔지니어링(주) 냉벽 화학기상증착 방법 및 장치
CH696013A5 (de) * 2002-10-03 2006-11-15 Tetra Laval Holdings & Finance Vorrichtung zur Behandlung eines bandförmigen Materials in einem Plasma-unterstützten Prozess.
JPWO2006093168A1 (ja) * 2005-03-04 2008-08-07 株式会社ユーテック Ｃｖｄ装置と、それを用いた多層膜形成方法と、それにより形成された多層膜
JP4747658B2 (ja) * 2005-04-22 2011-08-17 大日本印刷株式会社 成膜装置及び成膜方法
US7763114B2 (en) * 2005-12-28 2010-07-27 3M Innovative Properties Company Rotatable aperture mask assembly and deposition system
JP2008031521A (ja) * 2006-07-28 2008-02-14 Sony Corp ロールツーロール型のプラズマ真空処理装置
JP2012518894A (ja) * 2009-02-02 2012-08-16 リンデール インコーポレイテッド 高密度コンデンサまたは他の顕微鏡的層を有する機械的デバイスの製造方法
JP5562723B2 (ja) * 2009-05-29 2014-07-30 富士フイルム株式会社 成膜方法、成膜装置、およびガスバリアフィルムの製造方法
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JP5831759B2 (ja) * 2011-04-28 2015-12-09 日東電工株式会社 真空成膜方法、及び該方法によって得られる積層体
WO2013103609A1 (en) * 2012-01-03 2013-07-11 Applied Materials, Inc. Advanced platform for passivating crystalline silicon solar cells
EP2762608B1 (en) * 2013-01-31 2019-10-02 Applied Materials, Inc. Gas separation by adjustable separation wall
EP2762609B1 (en) * 2013-01-31 2019-04-17 Applied Materials, Inc. Apparatus and method for depositing at least two layers on a substrate
EP2784176B1 (en) * 2013-03-28 2018-10-03 Applied Materials, Inc. Deposition platform for flexible substrates

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5399254A (en) * 1990-12-14 1995-03-21 Leybold Ag Apparatus for plasma treatment
CN102027574A (zh) * 2008-02-08 2011-04-20 朗姆研究公司 等离子体处理室部件的保护性涂层及其使用方法
CN102197159A (zh) * 2008-11-05 2011-09-21 株式会社爱发科 卷绕式真空处理装置
CN101853767A (zh) * 2009-03-30 2010-10-06 东京毅力科创株式会社 基板处理装置

Also Published As

Publication number Publication date
EP2762607A1 (en) 2014-08-06
EP2762607B1 (en) 2018-07-25
TW201441403A (zh) 2014-11-01
JP6297597B2 (ja) 2018-03-20
CN104968830A (zh) 2015-10-07
KR20150114974A (ko) 2015-10-13
KR102033673B1 (ko) 2019-10-17
JP2016514198A (ja) 2016-05-19
US20140212599A1 (en) 2014-07-31
WO2014118177A1 (en) 2014-08-07
TWI619827B (zh) 2018-04-01

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