JP6282041B2 - 発振器 - Google Patents

発振器 Download PDF

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Publication number
JP6282041B2
JP6282041B2 JP2013073648A JP2013073648A JP6282041B2 JP 6282041 B2 JP6282041 B2 JP 6282041B2 JP 2013073648 A JP2013073648 A JP 2013073648A JP 2013073648 A JP2013073648 A JP 2013073648A JP 6282041 B2 JP6282041 B2 JP 6282041B2
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JP
Japan
Prior art keywords
resistance element
resonator
frequency
conductors
oscillator
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Active
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JP2013073648A
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English (en)
Japanese (ja)
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JP2014199965A5 (enExample
JP2014199965A (ja
Inventor
泰史 小山
泰史 小山
亮太 関口
亮太 関口
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2013073648A priority Critical patent/JP6282041B2/ja
Priority to US14/226,704 priority patent/US9231521B2/en
Publication of JP2014199965A publication Critical patent/JP2014199965A/ja
Publication of JP2014199965A5 publication Critical patent/JP2014199965A5/ja
Application granted granted Critical
Publication of JP6282041B2 publication Critical patent/JP6282041B2/ja
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/02—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
    • H03B7/06—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
    • H03B7/08—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device being a tunnel diode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/12—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising distributed inductance and capacitance
    • H03B7/14—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising distributed inductance and capacitance active element being semiconductor device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/006—Functional aspects of oscillators
    • H03B2200/0084—Functional aspects of oscillators dedicated to Terahertz frequencies

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  • Waveguide Aerials (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
  • Variable-Direction Aerials And Aerial Arrays (AREA)
JP2013073648A 2013-03-29 2013-03-29 発振器 Active JP6282041B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013073648A JP6282041B2 (ja) 2013-03-29 2013-03-29 発振器
US14/226,704 US9231521B2 (en) 2013-03-29 2014-03-26 Oscillator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013073648A JP6282041B2 (ja) 2013-03-29 2013-03-29 発振器

Publications (3)

Publication Number Publication Date
JP2014199965A JP2014199965A (ja) 2014-10-23
JP2014199965A5 JP2014199965A5 (enExample) 2016-05-19
JP6282041B2 true JP6282041B2 (ja) 2018-02-21

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ID=51620197

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013073648A Active JP6282041B2 (ja) 2013-03-29 2013-03-29 発振器

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US (1) US9231521B2 (enExample)
JP (1) JP6282041B2 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8571614B1 (en) 2009-10-12 2013-10-29 Hypres, Inc. Low-power biasing networks for superconducting integrated circuits
JP6415036B2 (ja) * 2013-11-07 2018-10-31 キヤノン株式会社 発振器
JP6562645B2 (ja) * 2014-02-28 2019-08-21 キヤノン株式会社 発振素子、及びこれを用いた発振器
CN104596641B (zh) * 2015-01-21 2017-03-08 中国科学院半导体研究所 太赫兹波探测器
US10222416B1 (en) 2015-04-14 2019-03-05 Hypres, Inc. System and method for array diagnostics in superconducting integrated circuit
JP6719882B2 (ja) * 2015-10-20 2020-07-08 キヤノン株式会社 発振素子及びそれを用いた測定装置
CN105300530B (zh) * 2015-11-10 2018-07-31 中国科学院半导体研究所 带有读出电路的太赫兹波探测器
CN105333951B (zh) * 2015-11-10 2017-11-21 中国科学院半导体研究所 基于场效应晶体管的太赫兹波探测器
JP6904760B2 (ja) * 2016-04-28 2021-07-21 キヤノン株式会社 素子
WO2017188363A1 (ja) 2016-04-28 2017-11-02 キヤノン株式会社 素子
US10541274B2 (en) 2017-01-26 2020-01-21 Hrl Laboratories, Llc Scalable, stackable, and BEOL-process compatible integrated neuron circuit
US10297751B2 (en) 2017-01-26 2019-05-21 Hrl Laboratories, Llc Low-voltage threshold switch devices with current-controlled negative differential resistance based on electroformed vanadium oxide layer
US11861488B1 (en) 2017-06-09 2024-01-02 Hrl Laboratories, Llc Scalable excitatory and inhibitory neuron circuitry based on vanadium dioxide relaxation oscillators
CN108054506A (zh) * 2017-12-11 2018-05-18 合肥工业大学 一种太赫兹贴片天线
US10714983B2 (en) * 2017-12-21 2020-07-14 Apple Inc. Near-field microwave wireless power system
CN108180931A (zh) * 2017-12-28 2018-06-19 中国科学院半导体研究所 一种太赫兹波探测器
CN108566164B (zh) * 2018-06-27 2024-05-28 深圳市太赫兹科技创新研究院 一种基于共振遂穿二极管的太赫兹振荡电路及振荡器
US11863125B2 (en) * 2020-02-26 2024-01-02 Tokyo Institute Of Technology Terahertz oscillator and producing method thereof
JP7574052B2 (ja) 2020-10-29 2024-10-28 キヤノン株式会社 発振器
WO2025211044A1 (ja) * 2024-04-02 2025-10-09 ソニーグループ株式会社 半導体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7274263B2 (en) 2004-08-25 2007-09-25 Samsung Electronics Co., Ltd. Microstrip stabilized quantum well resonance-tunneling generator for millimeter and submillimeter wavelength range
JP2007124250A (ja) 2005-10-27 2007-05-17 Tokyo Institute Of Technology テラヘルツ発振素子
JP5006642B2 (ja) * 2006-05-31 2012-08-22 キヤノン株式会社 テラヘルツ波発振器
JP5028068B2 (ja) * 2006-05-31 2012-09-19 キヤノン株式会社 アクティブアンテナ発振器
JP5717336B2 (ja) * 2009-03-27 2015-05-13 キヤノン株式会社 発振器
JP5632598B2 (ja) * 2009-09-07 2014-11-26 キヤノン株式会社 発振回路及び発振器
JP5836691B2 (ja) * 2010-09-22 2015-12-24 キヤノン株式会社 発振器

Also Published As

Publication number Publication date
JP2014199965A (ja) 2014-10-23
US20140292428A1 (en) 2014-10-02
US9231521B2 (en) 2016-01-05

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