JP6273162B2 - 欠陥検査方法及びその装置 - Google Patents

欠陥検査方法及びその装置 Download PDF

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Publication number
JP6273162B2
JP6273162B2 JP2014062440A JP2014062440A JP6273162B2 JP 6273162 B2 JP6273162 B2 JP 6273162B2 JP 2014062440 A JP2014062440 A JP 2014062440A JP 2014062440 A JP2014062440 A JP 2014062440A JP 6273162 B2 JP6273162 B2 JP 6273162B2
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Japan
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illumination
sample
light
defect inspection
unit
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Expired - Fee Related
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JP2014062440A
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English (en)
Japanese (ja)
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JP2015184203A5 (enExample
JP2015184203A (ja
Inventor
雄太 浦野
雄太 浦野
本田　敏文
敏文 本田
芝田　行広
行広 芝田
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Priority to JP2014062440A priority Critical patent/JP6273162B2/ja
Priority to US14/638,305 priority patent/US9310318B2/en
Publication of JP2015184203A publication Critical patent/JP2015184203A/ja
Publication of JP2015184203A5 publication Critical patent/JP2015184203A5/ja
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G01N2021/8848—Polarisation of light
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N2021/9513—Liquid crystal panels
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N2021/95638—Inspecting patterns on the surface of objects for PCB's
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
JP2014062440A 2014-03-25 2014-03-25 欠陥検査方法及びその装置 Expired - Fee Related JP6273162B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014062440A JP6273162B2 (ja) 2014-03-25 2014-03-25 欠陥検査方法及びその装置
US14/638,305 US9310318B2 (en) 2014-03-25 2015-03-04 Defect inspection method and defect inspection device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014062440A JP6273162B2 (ja) 2014-03-25 2014-03-25 欠陥検査方法及びその装置

Publications (3)

Publication Number Publication Date
JP2015184203A JP2015184203A (ja) 2015-10-22
JP2015184203A5 JP2015184203A5 (enExample) 2016-12-01
JP6273162B2 true JP6273162B2 (ja) 2018-01-31

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JP2014062440A Expired - Fee Related JP6273162B2 (ja) 2014-03-25 2014-03-25 欠陥検査方法及びその装置

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US (1) US9310318B2 (enExample)
JP (1) JP6273162B2 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9995850B2 (en) 2013-06-06 2018-06-12 Kla-Tencor Corporation System, method and apparatus for polarization control
CN105548215A (zh) * 2016-01-01 2016-05-04 广州兴森快捷电路科技有限公司 一种晕圈、pi裂纹的观察分析方法
US11089225B2 (en) * 2016-04-08 2021-08-10 Konica Minolta, Inc. Optical measuring device, image generating method, and image generating program
KR102691923B1 (ko) * 2017-12-27 2024-08-06 주성엔지니어링(주) 기판 검사 장치 및 기판 검사 방법
US12032013B2 (en) 2017-12-27 2024-07-09 Jusung Engineering Co., Ltd. Substrate inspection device and substrate inspection method
CN108982520A (zh) * 2018-08-03 2018-12-11 汕头超声显示器（二厂）有限公司 一种膜底可视缺陷的检测方法及装置
US10942135B2 (en) * 2018-11-14 2021-03-09 Kla Corporation Radial polarizer for particle detection
US12025569B2 (en) * 2018-12-27 2024-07-02 Hitachi High-Tech Corporation Defect inspection device and inspection method, and optical module
US11035790B2 (en) * 2018-12-31 2021-06-15 Industrial Cooperation Foundation Chonbuk National University Inspection apparatus and inspection method
US10948423B2 (en) * 2019-02-17 2021-03-16 Kla Corporation Sensitive particle detection with spatially-varying polarization rotator and polarizer
CN113125456B (zh) * 2019-12-31 2024-12-03 深圳中科飞测科技股份有限公司 发光装置、检测方法、检测设备
KR20220023874A (ko) * 2020-08-20 2022-03-03 삼성디스플레이 주식회사 표시 장치 광학 성능 테스트용 광학 검사 기기 및 이를 이용한 광학 검사 방법
US12345654B2 (en) * 2021-03-09 2025-07-01 Hitachi High-Tech Corporation Defect inspection device, defect inspection method, and adjustment substrate
CN114371148B (zh) * 2022-01-19 2022-11-08 之江实验室 一种基于零椭偏暗场照明的散射干涉成像系统及方法
CN119804492B (zh) * 2025-03-13 2025-06-13 上海中科飞测半导体科技有限公司 暗场晶圆检测设备及其光学标定系统和光学标定方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4988223B2 (ja) * 2005-06-22 2012-08-01 株式会社日立ハイテクノロジーズ 欠陥検査装置およびその方法
JP4669995B2 (ja) 2006-08-02 2011-04-13 ナノフォトン株式会社 光学顕微鏡及び観察方法
JP2010025713A (ja) * 2008-07-18 2010-02-04 Hitachi High-Technologies Corp 欠陥検査方法及び欠陥検査装置
JP2010101714A (ja) * 2008-10-22 2010-05-06 Toshiba Corp パターン検査のためのパラメータ決定装置、プログラム、及び方法
JP2011122990A (ja) * 2009-12-14 2011-06-23 Hitachi High-Technologies Corp 欠陥検査装置及び欠陥検査方法
JP5712079B2 (ja) * 2011-07-29 2015-05-07 株式会社日立ハイテクノロジーズ 欠陥検査装置および欠陥検査方法
JP2013061185A (ja) * 2011-09-12 2013-04-04 Toshiba Corp パターン検査装置およびパターン検査方法

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US9310318B2 (en) 2016-04-12
US20150276623A1 (en) 2015-10-01
JP2015184203A (ja) 2015-10-22

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