JP6268038B2 - 半導体装置およびそれを用いた電力変換装置 - Google Patents
半導体装置およびそれを用いた電力変換装置 Download PDFInfo
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- JP6268038B2 JP6268038B2 JP2014106643A JP2014106643A JP6268038B2 JP 6268038 B2 JP6268038 B2 JP 6268038B2 JP 2014106643 A JP2014106643 A JP 2014106643A JP 2014106643 A JP2014106643 A JP 2014106643A JP 6268038 B2 JP6268038 B2 JP 6268038B2
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- 239000004065 semiconductor Substances 0.000 title claims description 181
- 238000006243 chemical reaction Methods 0.000 title claims description 10
- 239000000463 material Substances 0.000 claims description 15
- 230000007704 transition Effects 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 238000011084 recovery Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 12
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 12
- 229910010271 silicon carbide Inorganic materials 0.000 description 11
- 239000000969 carrier Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 3
- 230000005669 field effect Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
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- H—ELECTRICITY
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- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
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- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
- H01L29/0623—Buried supplementary region, e.g. buried guard ring
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- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
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- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
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Description
102…スイッチング素子、
103…主ダイオード、
104…補助ダイオード、
105…エミッタ端子、
106、606…ゲート端子、
107…コレクタ端子、
108…実装基板、
201…半導体装置、
211、511、545…n+層、
212、512…n-層、
213…p-層、
214、514、531、543…p+層、
221…カソード電極、
222…アノード電極、
230、530…絶縁膜、
501、601…半導体チップ、
521…コレクタ電極、
522…エミッタ電極、
542…p層、
544…n層、
605…ソース端子、
607…ドレイン端子。
Claims (8)
- スイッチング素子と、
前記スイッチング素子に並列に接続された第1のダイオード素子と、
前記スイッチング素子に並列に接続され、かつ、前記第1のダイオード素子とは構造の異なる第2のダイオード素子と
を備え、
前記第2のダイオード素子は、導通時に両端子間に流れる電流が前記第1のダイオード素子よりも小さく、かつ、導通状態から非導通状態へ遷移する期間である過渡時に両端子間に流れる電流が前記第1のダイオード素子よりも大きく、
前記スイッチング素子と前記第2のダイオード素子とが共通の半導体チップ上に形成され、
前記半導体チップは、
第1導電型の第1半導体領域と、
MOS形ゲートと、
前記MOS形ゲートに接する第1導電型の第2半導体領域と、
前記MOS形ゲートと前記第2半導体領域とに接する第2導電型の第3半導体領域と、
前記第1半導体領域内に形成される第2導電型の第4半導体領域と
を有し、
前記第3半導体領域は、主電極と電気的に接続され、
前記第4半導体領域は、前記第3半導体領域と前記主電極との電気的接続に係る抵抗よりも高い抵抗で前記主電極と電気的に接続される
ことを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
前記第1のダイオード素子の母材とする半導体材料は、前記第2のダイオード素子の母材とする半導体材料よりもバンドギャップが大きい
ことを特徴とする半導体装置。 - スイッチング素子と、
前記スイッチング素子に並列に接続された第1のダイオード素子と、
前記スイッチング素子に並列に接続され、かつ、前記第1のダイオード素子とは構造の異なる第2のダイオード素子と
を備え、
前記第2のダイオード素子は、導通時に両端子間に流れる電流が前記第1のダイオード素子よりも小さく、かつ、導通状態から非導通状態へ遷移する期間である過渡時に両端子間に流れる電流が前記第1のダイオード素子よりも大きく、
前記スイッチング素子と前記第1のダイオード素子とが共通の半導体チップ上に形成され、
前記スイッチング素子がMOSFETであり、
前記第1のダイオードが前記スイッチング素子のボディダイオードである
ことを特徴とする半導体装置。 - スイッチング素子と、
前記スイッチング素子に並列に接続された第1のダイオード素子と、
前記スイッチング素子に並列に接続され、かつ、前記第1のダイオード素子とは構造の異なる第2のダイオード素子と
を備え、
前記第2のダイオード素子は、導通時に両端子間に流れる電流が前記第1のダイオード素子よりも小さく、かつ、導通状態から非導通状態へ遷移する期間である過渡時に両端子間に流れる電流が前記第1のダイオード素子よりも大きく、
前記スイッチング素子と前記第1のダイオード素子とが共通の半導体チップ上に形成され、
前記第2のダイオード素子は、
第1導電型の第1半導体領域と、
前記第1半導体領域内に形成された第2導電型の第2半導体領域と、
前記第1半導体領域内に形成され、かつ、前記第2半導体領域よりも不純物濃度の高い第2導電型の第3半導体領域と
を有し、
前記第2半導体領域は、主電極と電気的に接続され、
前記第3半導体領域は、前記第2半導体領域と前記主電極との電気的接続に係る抵抗よりも高い抵抗で前記主電極と電気的に接続される
ことを特徴とする半導体装置。 - スイッチング素子と、
前記スイッチング素子に並列に接続された第1のダイオード素子と、
前記スイッチング素子に並列に接続され、かつ、前記第1のダイオード素子とは構造の異なる第2のダイオード素子と
を備え、
前記第2のダイオード素子は、
第1導電型の第1半導体領域と、
前記第1半導体領域内に形成された第2導電型の第2半導体領域と、
前記第1半導体領域内に形成され、かつ、前記第2半導体領域よりも不純物濃度の高い第2導電型の第3半導体領域と
を有し、
前記第2半導体領域は、主電極と電気的に接続され、
前記第3半導体領域は、前記第2半導体領域と前記主電極との電気的接続に係る抵抗よりも高い抵抗で前記主電極と電気的に接続される
ことを特徴とする半導体装置。 - 請求項5に記載の半導体装置において、
前記第2半導体領域の間に複数の前記第3半導体領域が配置される
ことを特徴とする半導体装置。 - 請求項5に記載の半導体装置において、
前記第1半導体領域の内部に前記第3半導体領域が配置される
ことを特徴とする半導体装置。 - 一対の直流端子と、
交流の相数と同数の交流端子と、
前記直流端子と前記交流端子の間にされる複数の半導体スイッチング素子と、
前記複数の半導体スイッチング素子に並列に接続される複数のダイオード素子と
を備える電力変換装置であって、
前記スイッチング素子と前記ダイオード素子とを組み合わせた半導体装置が、請求項1乃至7のいずれか一項に記載の半導体装置である
ことを特徴とする電力変換装置。
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JP2014106643A JP6268038B2 (ja) | 2014-05-23 | 2014-05-23 | 半導体装置およびそれを用いた電力変換装置 |
EP15168308.3A EP2947772A1 (en) | 2014-05-23 | 2015-05-20 | Semiconductor device and power converter using the same |
US14/719,413 US9654027B2 (en) | 2014-05-23 | 2015-05-22 | Semiconductor device and power converter using the same |
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JP2014106643A JP6268038B2 (ja) | 2014-05-23 | 2014-05-23 | 半導体装置およびそれを用いた電力変換装置 |
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JP2017045901A (ja) * | 2015-08-27 | 2017-03-02 | トヨタ自動車株式会社 | 還流ダイオードと車載用電源装置 |
JP6542174B2 (ja) | 2016-09-21 | 2019-07-10 | 株式会社東芝 | 半導体装置及び半導体装置の制御方法 |
CN109979935A (zh) * | 2017-12-28 | 2019-07-05 | 富士电机株式会社 | 半导体装置及半导体装置的制造方法 |
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SE9502249D0 (sv) | 1995-06-21 | 1995-06-21 | Abb Research Ltd | Converter circuitry having at least one switching device and circuit module |
US6979863B2 (en) * | 2003-04-24 | 2005-12-27 | Cree, Inc. | Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same |
JP2008017237A (ja) * | 2006-07-07 | 2008-01-24 | Mitsubishi Electric Corp | 電子部品およびその電子部品を用いた電力変換器 |
JP4980126B2 (ja) * | 2007-04-20 | 2012-07-18 | 株式会社日立製作所 | フリーホイールダイオードとを有する回路装置 |
JP5277579B2 (ja) * | 2007-07-25 | 2013-08-28 | 日産自動車株式会社 | 半導体装置 |
JP2009159184A (ja) | 2007-12-26 | 2009-07-16 | Hitachi Ltd | フリーホイールダイオードとを有する回路装置、及び、ダイオードを用いた回路装置とそれを用いた電力変換器 |
JP2010200585A (ja) | 2009-02-27 | 2010-09-09 | Nissan Motor Co Ltd | スイッチング回路 |
JP5316251B2 (ja) | 2009-06-19 | 2013-10-16 | 住友電気工業株式会社 | スイッチ回路 |
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JP2013013224A (ja) * | 2011-06-29 | 2013-01-17 | Sumitomo Electric Ind Ltd | 双方向スイッチ |
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- 2015-05-20 EP EP15168308.3A patent/EP2947772A1/en not_active Withdrawn
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US20150340965A1 (en) | 2015-11-26 |
US9654027B2 (en) | 2017-05-16 |
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EP2947772A1 (en) | 2015-11-25 |
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