JP6267162B2 - 熱処理方法及び熱処理装置 - Google Patents

熱処理方法及び熱処理装置 Download PDF

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Publication number
JP6267162B2
JP6267162B2 JP2015161286A JP2015161286A JP6267162B2 JP 6267162 B2 JP6267162 B2 JP 6267162B2 JP 2015161286 A JP2015161286 A JP 2015161286A JP 2015161286 A JP2015161286 A JP 2015161286A JP 6267162 B2 JP6267162 B2 JP 6267162B2
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JP
Japan
Prior art keywords
light
illuminance
processed
light emitting
emitting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2015161286A
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English (en)
Japanese (ja)
Other versions
JP2016058722A (ja
Inventor
雅敏 佐藤
雅敏 佐藤
鈴木　智博
智博 鈴木
田中　澄
澄 田中
和広 大矢
和広 大矢
倫基 本田
倫基 本田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to PCT/JP2015/074641 priority Critical patent/WO2016039199A1/ja
Priority to KR1020177006191A priority patent/KR102225424B1/ko
Priority to TW104128885A priority patent/TWI591727B/zh
Publication of JP2016058722A publication Critical patent/JP2016058722A/ja
Application granted granted Critical
Publication of JP6267162B2 publication Critical patent/JP6267162B2/ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Radiation Pyrometers (AREA)
JP2015161286A 2014-09-09 2015-08-18 熱処理方法及び熱処理装置 Active JP6267162B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
PCT/JP2015/074641 WO2016039199A1 (ja) 2014-09-09 2015-08-31 熱処理方法及び熱処理装置
KR1020177006191A KR102225424B1 (ko) 2014-09-09 2015-08-31 열처리 방법 및 열처리 장치
TW104128885A TWI591727B (zh) 2014-09-09 2015-09-02 熱處理方法及熱處理裝置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014183430 2014-09-09
JP2014183430 2014-09-09

Publications (2)

Publication Number Publication Date
JP2016058722A JP2016058722A (ja) 2016-04-21
JP6267162B2 true JP6267162B2 (ja) 2018-01-24

Family

ID=55759121

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015161286A Active JP6267162B2 (ja) 2014-09-09 2015-08-18 熱処理方法及び熱処理装置

Country Status (3)

Country Link
JP (1) JP6267162B2 (ko)
KR (1) KR102225424B1 (ko)
TW (1) TWI591727B (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7013259B2 (ja) * 2018-01-26 2022-01-31 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置および熱処理方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5394730B2 (ja) * 2008-12-26 2014-01-22 東京エレクトロン株式会社 アニール装置およびアニール方法
JP5606024B2 (ja) * 2009-08-28 2014-10-15 東京エレクトロン株式会社 被処理体加熱処理方法及び被処理体加熱処理装置
KR101732216B1 (ko) * 2012-09-28 2017-05-02 도쿄엘렉트론가부시키가이샤 온도 측정 기구 및 온도 측정 방법

Also Published As

Publication number Publication date
KR102225424B1 (ko) 2021-03-08
TWI591727B (zh) 2017-07-11
TW201624569A (zh) 2016-07-01
KR20170051438A (ko) 2017-05-11
JP2016058722A (ja) 2016-04-21

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