JP6266258B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP6266258B2 JP6266258B2 JP2013161968A JP2013161968A JP6266258B2 JP 6266258 B2 JP6266258 B2 JP 6266258B2 JP 2013161968 A JP2013161968 A JP 2013161968A JP 2013161968 A JP2013161968 A JP 2013161968A JP 6266258 B2 JP6266258 B2 JP 6266258B2
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- film
- silicon nitride
- layer electrode
- nitride film
- polysilicon
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- 239000004065 semiconductor Substances 0.000 title claims description 29
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 50
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 50
- 239000012535 impurity Substances 0.000 claims description 42
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 39
- 229920005591 polysilicon Polymers 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 22
- 238000009792 diffusion process Methods 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 12
- 239000012528 membrane Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 35
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 29
- 239000003990 capacitor Substances 0.000 description 24
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 21
- 229910052782 aluminium Inorganic materials 0.000 description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 15
- 229910052742 iron Inorganic materials 0.000 description 14
- 238000005468 ion implantation Methods 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 229910052785 arsenic Inorganic materials 0.000 description 11
- 239000010949 copper Substances 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 10
- 229910052802 copper Inorganic materials 0.000 description 10
- 229910052759 nickel Inorganic materials 0.000 description 10
- 239000000758 substrate Substances 0.000 description 9
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 8
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- -1 arsenic ions Chemical class 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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- Semiconductor Memories (AREA)
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Description
Claims (2)
- 下層電極と上層電極との間に、誘電体膜を備えた半導体装置の製造方法において、前記下層電極又は前記上層電極の少なくともいずれか一方を形成する工程は、
不純物元素を含むポリシリコンからなる前記下層電極又は前記上層電極を構成する膜を形成した後、該膜上にシリコン窒化膜を堆積させる工程と、前記膜内に含まれる不純物元素のうち拡散係数の大きい不純物元素を前記膜から前記シリコン窒化膜中に拡散させる加熱処理を行う工程と、前記シリコン窒化膜を該シリコン窒化膜中に拡散した前記不純物元素と共に除去する工程と、を含むことを特徴とする半導体装置の製造方法。 - 請求項1記載の半導体装置の製造方法において、前記下層電極又は前記上層電極の少なくともいずれか一方を形成する工程は、
前記下層電極又は上層電極を構成するノンドープのポリシリコン膜を形成し、該ポリシリコン膜中に不純物をイオン注入し、導電性の前記下層電極又は前記上層電極を形成する工程と、
前記不純物を注入したポリシリコン膜上にシリコン窒化膜を堆積させる工程と、
前記ポリシリコン膜内に含まれる不純物元素のうち、該ポリシリコンを導電性とするために注入された不純物より拡散係数の大きい不純物元素を前記ポリシリコン膜から前記シリコン窒化膜中に拡散させる加熱処理を行う工程と、
前記シリコン窒化膜を該シリコン窒化膜中に拡散した前記不純物元素と共に除去する工程と、を含むことを特徴とする半導体装置の製造方法。
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JP2013161968A JP6266258B2 (ja) | 2013-08-05 | 2013-08-05 | 半導体装置の製造方法 |
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JP2015032720A JP2015032720A (ja) | 2015-02-16 |
JP6266258B2 true JP6266258B2 (ja) | 2018-01-24 |
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Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01225350A (ja) * | 1988-03-04 | 1989-09-08 | Nec Corp | 半導体集積回路装置の製造方法 |
JP2774019B2 (ja) * | 1992-06-08 | 1998-07-09 | シャープ株式会社 | 半導体装置の製造方法 |
JPH06252153A (ja) * | 1993-03-01 | 1994-09-09 | Toshiba Corp | 半導体装置の製造方法 |
JP3296307B2 (ja) * | 1998-11-02 | 2002-06-24 | 日本電気株式会社 | ゲッタリングサイト層を有する半導体装置及びその製造方法 |
JP2003017497A (ja) * | 2001-07-04 | 2003-01-17 | Nec Corp | 半導体装置の製造方法 |
JP2007067366A (ja) * | 2005-08-05 | 2007-03-15 | Elpida Memory Inc | 半導体記憶装置の製造方法 |
JP2007134641A (ja) * | 2005-11-14 | 2007-05-31 | Canon Inc | 半導体装置の製造方法 |
JP2009212363A (ja) * | 2008-03-05 | 2009-09-17 | New Japan Radio Co Ltd | キャパシタの製造方法 |
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