JP6261720B2 - オプトエレクトロニクス素子およびオプトエレクトロニクス素子の製造方法 - Google Patents

オプトエレクトロニクス素子およびオプトエレクトロニクス素子の製造方法 Download PDF

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JP6261720B2
JP6261720B2 JP2016513237A JP2016513237A JP6261720B2 JP 6261720 B2 JP6261720 B2 JP 6261720B2 JP 2016513237 A JP2016513237 A JP 2016513237A JP 2016513237 A JP2016513237 A JP 2016513237A JP 6261720 B2 JP6261720 B2 JP 6261720B2
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cavity
casing
optoelectronic
semiconductor chip
potting material
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Japanese (ja)
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JP2016518725A5 (https=
JP2016518725A (ja
Inventor
ホルツ ユルゲン
ホルツ ユルゲン
ツィツルスペルガー ミヒャエル
ツィツルスペルガー ミヒャエル
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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JP2016513237A 2013-05-17 2013-05-17 オプトエレクトロニクス素子およびオプトエレクトロニクス素子の製造方法 Active JP6261720B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2013/060279 WO2014183800A1 (de) 2013-05-17 2013-05-17 Optoelektronisches bauelement und verfahren zu seiner herstellung

Publications (3)

Publication Number Publication Date
JP2016518725A JP2016518725A (ja) 2016-06-23
JP2016518725A5 JP2016518725A5 (https=) 2017-10-19
JP6261720B2 true JP6261720B2 (ja) 2018-01-17

Family

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JP2016513237A Active JP6261720B2 (ja) 2013-05-17 2013-05-17 オプトエレクトロニクス素子およびオプトエレクトロニクス素子の製造方法

Country Status (5)

Country Link
US (1) US9991428B2 (https=)
JP (1) JP6261720B2 (https=)
DE (1) DE212013000297U1 (https=)
TW (1) TW201501365A (https=)
WO (1) WO2014183800A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107946441A (zh) * 2016-10-12 2018-04-20 亿光电子工业股份有限公司 发光装置及发光二极管封装结构
WO2018233839A1 (en) * 2017-06-22 2018-12-27 Osram Opto Semiconductors Gmbh OPTOELECTRONIC COMPONENT
WO2019048066A1 (en) * 2017-09-11 2019-03-14 Osram Opto Semiconductors Gmbh OPTOELECTRONIC DEVICE AND METHOD FOR PRODUCING OPTOELECTRONIC DEVICE
DE102020201493A1 (de) 2020-02-07 2021-08-12 Robert Bosch Gesellschaft mit beschränkter Haftung Gehäuse und Verfahren zum Vergießen eines offenen Aufnahmeraums eines Gehäuses
DE102020206897A1 (de) * 2020-06-03 2021-12-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements
CN113078252B (zh) * 2021-03-17 2022-11-01 江门市迪司利光电股份有限公司 一种led芯片的封装方法
CN113078254B (zh) * 2021-03-18 2022-11-01 江门市迪司利光电股份有限公司 一种双源发光led封装方法和封装结构

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2981370B2 (ja) * 1993-07-16 1999-11-22 シャープ株式会社 Ｍｉｄチップ型発光素子
EP2234165A3 (en) 1998-06-03 2011-06-22 Everlight Electronics Co., Ltd. Photoelectric transmitting or receiving device and manufacturing method thereof
JP4627177B2 (ja) 2004-11-10 2011-02-09 スタンレー電気株式会社 Ｌｅｄの製造方法
US7763478B2 (en) 2006-08-21 2010-07-27 Cree, Inc. Methods of forming semiconductor light emitting device packages by liquid injection molding
KR100811723B1 (ko) * 2007-03-30 2008-03-11 서울반도체 주식회사 Ｌｅｄ 패키지
DE102008029191A1 (de) 2008-01-31 2009-08-06 Osram Opto Semiconductors Gmbh Beleuchtungseinrichtung zur Hinterleuchtung eines Displays sowie ein Display mit einer solchen Beleuchtungseinrichtung
TW201036504A (en) 2009-03-18 2010-10-01 Everlight Electronics Co Ltd Photoelectric transmitting or receiving device and manufacturing method thereof
KR20110018777A (ko) * 2009-08-18 2011-02-24 삼성엘이디 주식회사 발광 다이오드 패키지
US8525213B2 (en) * 2010-03-30 2013-09-03 Lg Innotek Co., Ltd. Light emitting device having multiple cavities and light unit having the same
DE102010023955A1 (de) 2010-06-16 2011-12-22 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil
DE102010024864B4 (de) 2010-06-24 2021-01-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil
DE102010045596A1 (de) 2010-09-16 2012-03-22 Osram Opto Semiconductors Gmbh Oberflächenmontierbares optoelektronisches Halbleiterbauteil und Leiterrahmenvebund
KR20120091862A (ko) 2011-02-10 2012-08-20 삼성전자주식회사 발광소자 패키지
KR101812761B1 (ko) * 2011-03-02 2017-12-28 서울반도체 주식회사 발광다이오드 패키지
JP5919504B2 (ja) 2011-06-30 2016-05-18 パナソニックＩｐマネジメント株式会社 発光装置

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Publication number Publication date
US20160118553A1 (en) 2016-04-28
US9991428B2 (en) 2018-06-05
TW201501365A (zh) 2015-01-01
WO2014183800A1 (de) 2014-11-20
DE212013000297U1 (de) 2016-01-11
TWI560909B (https=) 2016-12-01
JP2016518725A (ja) 2016-06-23

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