JP6257622B2 - ホウ素層を有するシリコン基板を含むフォトカソード - Google Patents
ホウ素層を有するシリコン基板を含むフォトカソード Download PDFInfo
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- JP6257622B2 JP6257622B2 JP2015525489A JP2015525489A JP6257622B2 JP 6257622 B2 JP6257622 B2 JP 6257622B2 JP 2015525489 A JP2015525489 A JP 2015525489A JP 2015525489 A JP2015525489 A JP 2015525489A JP 6257622 B2 JP6257622 B2 JP 6257622B2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 143
- 239000010703 silicon Substances 0.000 title claims description 143
- 229910052710 silicon Inorganic materials 0.000 title claims description 142
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims description 84
- 229910052796 boron Inorganic materials 0.000 title claims description 84
- 239000000758 substrate Substances 0.000 title claims description 59
- 239000000463 material Substances 0.000 claims description 52
- 238000007689 inspection Methods 0.000 claims description 34
- 238000001514 detection method Methods 0.000 claims description 29
- 239000002019 doping agent Substances 0.000 claims description 18
- 230000003287 optical effect Effects 0.000 claims description 17
- 150000001340 alkali metals Chemical class 0.000 claims description 16
- 229910052783 alkali metal Inorganic materials 0.000 claims description 14
- 229910000272 alkali metal oxide Inorganic materials 0.000 claims description 12
- 230000003667 anti-reflective effect Effects 0.000 claims description 10
- 230000005684 electric field Effects 0.000 claims description 10
- 238000009792 diffusion process Methods 0.000 claims description 9
- 238000005286 illumination Methods 0.000 claims description 9
- 230000004044 response Effects 0.000 claims description 6
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 5
- 229910052792 caesium Inorganic materials 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 116
- 238000001444 catalytic combustion detection Methods 0.000 description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 22
- 235000012431 wafers Nutrition 0.000 description 22
- 230000007547 defect Effects 0.000 description 19
- 239000013078 crystal Substances 0.000 description 12
- 235000012239 silicon dioxide Nutrition 0.000 description 11
- 238000010521 absorption reaction Methods 0.000 description 10
- 238000000576 coating method Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 10
- 239000000377 silicon dioxide Substances 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 238000005215 recombination Methods 0.000 description 8
- 230000006798 recombination Effects 0.000 description 8
- 230000035945 sensitivity Effects 0.000 description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
- 230000008901 benefit Effects 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 229910001942 caesium oxide Inorganic materials 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- KOPBYBDAPCDYFK-UHFFFAOYSA-N caesium oxide Chemical compound [O-2].[Cs+].[Cs+] KOPBYBDAPCDYFK-UHFFFAOYSA-N 0.000 description 4
- 230000013742 energy transducer activity Effects 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 3
- 239000006117 anti-reflective coating Substances 0.000 description 3
- 239000011247 coating layer Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- CFOAUMXQOCBWNJ-UHFFFAOYSA-N [B].[Si] Chemical compound [B].[Si] CFOAUMXQOCBWNJ-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- FRIKWZARTBPWBN-UHFFFAOYSA-N [Si].O=[Si]=O Chemical compound [Si].O=[Si]=O FRIKWZARTBPWBN-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000005527 interface trap Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000002085 persistent effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/38—Photoelectric screens; Charge-storage screens not using charge storage, e.g. photo-emissive screen, extended cathode
- H01J29/385—Photocathodes comprising a layer which modified the wave length of impinging radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B21/00—Microscopes
- G02B21/06—Means for illuminating specimens
- G02B21/08—Condensers
- G02B21/12—Condensers affording bright-field illumination
- G02B21/125—Condensers affording bright-field illumination affording both dark- and bright-field illumination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/34—Photo-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/26—Image pick-up tubes having an input of visible light and electric output
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/50—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14893—Charge coupled imagers comprising a photoconductive layer deposited on the CCD structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
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- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Health & Medical Sciences (AREA)
- Pathology (AREA)
- Immunology (AREA)
- Biochemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Optics & Photonics (AREA)
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
- Photovoltaic Devices (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
Claims (20)
- 相対する第1面及び第2面を有するシリコン基板と、
前記シリコン基板の第2面上に直接配置された主にホウ素から成る第1層と、
前記第1層の上に配置された低仕事関数材料を備える第2層と
を備えるフォトカソード。 - 前記低仕事関数材料は、アルカリ金属及びアルカリ金属酸化物のうちの1つを備える、請求項1記載のフォトカソード。
- 前記低仕事関数材料はセシウムを備える、請求項2記載のフォトカソード。
- 前記第1層は、1nmから5nmの範囲内の厚みを有する、請求項1記載のフォトカソード。
- 前記シリコン基板の第1面上に直接配置された主にホウ素から成る第3層を更に備える、請求項1記載のフォトカソード。
- 前記第3層の上に配置された反射防止材料を備える第4層を更に備える、請求項5記載のフォトカソード。
- 前記シリコン基板の第1面と第2面との間に外部電位差を発生させるための手段を更に備える、請求項4記載のフォトカソード。
- 前記シリコン基板は、p型拡散領域が、前記第1面から離れて配置された部分よりも前記第1面付近の部分において高いp型ドーパント濃度を有するように、前記第1面から前記第2面へ向かって広がるp型拡散領域を含む、請求項1記載のフォトカソード。
- 受光面上に導かれる光子に反応して電気信号を発生させるためのセンサであって、
前記光子に反応して光電子を放出するための前記受光面に隣接して配置されたフォトカソードであって、
前記受光面に面した第1面及び前記受光面の外方を向く第2面を有するシリコン基板と、
前記シリコン基板の第2面上に直接配置された主にホウ素から成る第1層と、
前記第1層の上に配置された低仕事関数材料を備える第2層と
を含むフォトカソードと、
前記フォトカソードによって放出される前記光電子を検出するための手段及び前記検出された光電子に反応して前記電気信号を発生させるための手段を含む、前記第2層に面した検出面を有する検出素子と、
前記検出素子の検出面が、介在するギャップ領域によって前記フォトカソードの第2層から分離するように、前記フォトカソードと前記検出素子との間に作動的に連結された筐体と、
前記フォトカソードから前記ギャップ領域へ放出される電子が電界によって前記検出素子へ向かって加速するように、前記フォトカソードと前記検出素子との間に電界を発生させるための手段と
を備えるセンサ。 - 前記低仕事関数材料は、アルカリ金属及びアルカリ金属酸化物のうちの1つを備える、請求項9記載のセンサ。
- 前記低仕事関数材料はセシウムを備える、請求項10記載のセンサ。
- 前記第1層は、1nmから5nmの範囲内の厚みを有する、請求項9記載のセンサ。
- 前記センサは、イメージインテンシファイア、電子衝撃型電荷結合素子(EBCCD)、及び光電子増倍管のうちの1つを備える、請求項9記載のセンサ。
- 前記シリコン基板の第1面上に直接配置された主にホウ素から成る第3層を更に備える、請求項9記載のセンサ。
- 前記第3層の上に配置された反射防止材料を備える第4層を更に備える、請求項14記載のセンサ。
- 前記センサの受光面は、前記第4層の上面である、請求項15記載のセンサ。
- 前記受光面は、窓に配置された反射防止材料の層を備える、請求項9記載のセンサ。
- 前記検出素子は、第2のシリコン基板を備え、前記シリコン基板の検出面上に直接配置されたホウ素層を含む、請求項9記載のセンサ。
- サンプル上に光子を送るための照明源と、
前記サンプルから光子を検出するためのセンサと、
前記照明源から前記サンプルへ、及び前記サンプルから前記センサへ前記光子を導くための光学系と
を備え、前記センサは、
前記光子に反応して光電子を放出するための受光面に隣接して配置されたフォトカソードであって、
前記光学系に向けられた第1面及び前記光学系の外方に向く第2面を有する単結晶シリコン基板と、
前記シリコン基板の第2面上に直接配置された主にホウ素から成る第1層と、
前記第1層の上に配置された低仕事関数材料を備える第2層と
を備えるフォトカソードと、
前記フォトカソードによって放出される光電子を検出するための手段及び検出された光電子に反応して電気信号を発生させるための手段を含む、前記第2層に面した検出面を有する検出素子と
を備える、検査システム。 - 前記センサは、イメージインテンシファイア、電子衝撃型電荷結合素子(EBCCD)、及び光電子増倍管のうちの1つを備える、請求項19記載の検査システム。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261679200P | 2012-08-03 | 2012-08-03 | |
US61/679,200 | 2012-08-03 | ||
US13/947,975 US9601299B2 (en) | 2012-08-03 | 2013-07-22 | Photocathode including silicon substrate with boron layer |
US13/947,975 | 2013-07-22 | ||
PCT/US2013/052546 WO2014022297A1 (en) | 2012-08-03 | 2013-07-29 | Photocathode including silicon substrate with boron layer |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2017233528A Division JP6442592B2 (ja) | 2012-08-03 | 2017-12-05 | ホウ素層を有するシリコン基板を含むフォトカソード |
Publications (2)
Publication Number | Publication Date |
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JP2015536012A JP2015536012A (ja) | 2015-12-17 |
JP6257622B2 true JP6257622B2 (ja) | 2018-01-10 |
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ID=50024546
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Application Number | Title | Priority Date | Filing Date |
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JP2015525489A Active JP6257622B2 (ja) | 2012-08-03 | 2013-07-29 | ホウ素層を有するシリコン基板を含むフォトカソード |
JP2017233528A Active JP6442592B2 (ja) | 2012-08-03 | 2017-12-05 | ホウ素層を有するシリコン基板を含むフォトカソード |
JP2018220050A Active JP6595074B2 (ja) | 2012-08-03 | 2018-11-26 | ホウ素層を有するシリコン基板を含むフォトカソード |
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JP2017233528A Active JP6442592B2 (ja) | 2012-08-03 | 2017-12-05 | ホウ素層を有するシリコン基板を含むフォトカソード |
JP2018220050A Active JP6595074B2 (ja) | 2012-08-03 | 2018-11-26 | ホウ素層を有するシリコン基板を含むフォトカソード |
Country Status (7)
Country | Link |
---|---|
US (3) | US9601299B2 (ja) |
EP (1) | EP2880693B1 (ja) |
JP (3) | JP6257622B2 (ja) |
KR (3) | KR102161724B1 (ja) |
CN (2) | CN104704640B (ja) |
TW (1) | TWI635602B (ja) |
WO (1) | WO2014022297A1 (ja) |
Families Citing this family (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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EP2880693B1 (en) | 2018-01-03 |
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CN108155200A (zh) | 2018-06-12 |
EP2880693A1 (en) | 2015-06-10 |
US20190066962A1 (en) | 2019-02-28 |
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US11081310B2 (en) | 2021-08-03 |
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