JP6255747B2 - 発光装置 - Google Patents

発光装置 Download PDF

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Publication number
JP6255747B2
JP6255747B2 JP2013137693A JP2013137693A JP6255747B2 JP 6255747 B2 JP6255747 B2 JP 6255747B2 JP 2013137693 A JP2013137693 A JP 2013137693A JP 2013137693 A JP2013137693 A JP 2013137693A JP 6255747 B2 JP6255747 B2 JP 6255747B2
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JP
Japan
Prior art keywords
light
light emitting
emitting element
emitting device
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2013137693A
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English (en)
Japanese (ja)
Other versions
JP2015012206A5 (enExample
JP2015012206A (ja
Inventor
弘樹 大黒
弘樹 大黒
山田　元量
元量 山田
藤川　康夫
康夫 藤川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Priority to JP2013137693A priority Critical patent/JP6255747B2/ja
Priority to US14/317,008 priority patent/US9231177B2/en
Priority to EP14174704.8A priority patent/EP2822046B1/en
Priority to CN201410309412.3A priority patent/CN104282822B/zh
Publication of JP2015012206A publication Critical patent/JP2015012206A/ja
Publication of JP2015012206A5 publication Critical patent/JP2015012206A5/ja
Application granted granted Critical
Publication of JP6255747B2 publication Critical patent/JP6255747B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector

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  • Led Device Packages (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
JP2013137693A 2013-07-01 2013-07-01 発光装置 Active JP6255747B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2013137693A JP6255747B2 (ja) 2013-07-01 2013-07-01 発光装置
US14/317,008 US9231177B2 (en) 2013-07-01 2014-06-27 Light emitting device
EP14174704.8A EP2822046B1 (en) 2013-07-01 2014-06-27 Light emitting device
CN201410309412.3A CN104282822B (zh) 2013-07-01 2014-07-01 发光装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013137693A JP6255747B2 (ja) 2013-07-01 2013-07-01 発光装置

Publications (3)

Publication Number Publication Date
JP2015012206A JP2015012206A (ja) 2015-01-19
JP2015012206A5 JP2015012206A5 (enExample) 2016-06-30
JP6255747B2 true JP6255747B2 (ja) 2018-01-10

Family

ID=50982843

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013137693A Active JP6255747B2 (ja) 2013-07-01 2013-07-01 発光装置

Country Status (4)

Country Link
US (1) US9231177B2 (enExample)
EP (1) EP2822046B1 (enExample)
JP (1) JP6255747B2 (enExample)
CN (1) CN104282822B (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160087048A (ko) * 2015-01-12 2016-07-21 삼성전자주식회사 발광다이오드 패키지
JP6543998B2 (ja) * 2015-03-30 2019-07-17 大日本印刷株式会社 Ｌｅｄバックライト及びそれを用いたｌｅｄ表示装置
JP6558034B2 (ja) * 2015-04-03 2019-08-14 大日本印刷株式会社 Ｌｅｄ素子用のフレキシブル多層回路基板及びそれを用いたｌｅｄドットマトリックス表示装置
JP6572083B2 (ja) * 2015-09-30 2019-09-04 大日本印刷株式会社 発光素子用基板、モジュール及び発光素子用基板の製造方法
JP6918452B2 (ja) * 2015-09-30 2021-08-11 大日本印刷株式会社 発光素子用基板及びモジュール
JP6556009B2 (ja) * 2015-09-30 2019-08-07 大日本印刷株式会社 発光素子用基板、モジュール及び発光素子用基板の製造方法
US10199545B2 (en) 2015-09-30 2019-02-05 Dai Nippon Printing Co., Ltd. Substrate for light emitting element and module
JP6451579B2 (ja) 2015-09-30 2019-01-16 日亜化学工業株式会社 発光装置
US11101247B2 (en) 2015-10-08 2021-08-24 Nichia Corporation Light-emitting device, integrated light-emitting device, and light-emitting module
JP6524904B2 (ja) 2015-12-22 2019-06-05 日亜化学工業株式会社 発光装置
JP6776855B2 (ja) 2016-12-06 2020-10-28 日亜化学工業株式会社 発光装置
JP6868388B2 (ja) 2016-12-26 2021-05-12 日亜化学工業株式会社 発光装置および集積型発光装置
JP7277815B2 (ja) * 2017-06-13 2023-05-19 日亜化学工業株式会社 発光装置の製造方法および発光装置
KR102473399B1 (ko) * 2017-06-26 2022-12-02 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자 패키지 및 광원 장치
KR102401826B1 (ko) * 2017-09-15 2022-05-25 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자 패키지 및 이를 포함하는 조명장치
JP7064127B2 (ja) 2017-09-29 2022-05-10 日亜化学工業株式会社 発光装置およびその製造方法
US11594662B2 (en) * 2019-07-31 2023-02-28 Nichia Corporation Light-emitting device
JP7021447B2 (ja) * 2020-10-05 2022-02-17 日亜化学工業株式会社 発光装置

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3864862B2 (ja) * 2002-04-04 2007-01-10 セイコーエプソン株式会社 電気光学装置及び電子機器
US7923918B2 (en) * 2003-03-13 2011-04-12 Nichia Corporation Light emitting film, luminescent device, method for manufacturing light emitting film and method for manufacturing luminescent device
JP4505794B2 (ja) * 2004-03-10 2010-07-21 信越半導体株式会社 発光素子の製造方法
US20050247944A1 (en) * 2004-05-05 2005-11-10 Haque Ashim S Semiconductor light emitting device with flexible substrate
KR100624307B1 (ko) * 2005-02-23 2006-09-19 제일모직주식회사 표시장치용 저반사율의 휘도 향상 다층 광학필름 및 이를이용한 유기발광다이오드 표시장치
JP4049186B2 (ja) * 2006-01-26 2008-02-20 ソニー株式会社 光源装置
EP1996860A2 (en) 2006-01-31 2008-12-03 3M Innovative Properties Company Led illumination assembly with compliant foil construction
US20070285740A1 (en) * 2006-05-02 2007-12-13 Rohm Co., Ltd. Image sensor module
US7806560B2 (en) 2007-01-31 2010-10-05 3M Innovative Properties Company LED illumination assembly with compliant foil construction
JP4107349B2 (ja) 2007-06-20 2008-06-25 ソニー株式会社 光源装置、表示装置
JP2010109119A (ja) 2008-10-30 2010-05-13 Sanyo Electric Co Ltd 発光モジュール及びその製造方法
JP5746620B2 (ja) * 2009-06-26 2015-07-08 株式会社朝日ラバー 白色反射材及びその製造方法
JP5996871B2 (ja) * 2010-02-09 2016-09-21 日亜化学工業株式会社 発光装置および発光装置の製造方法
JP2011233650A (ja) * 2010-04-26 2011-11-17 Toshiba Corp 半導体発光装置
JP2012044102A (ja) * 2010-08-23 2012-03-01 Hitachi Cable Ltd 発光装置及びその製造方法並びに配線基板
JP5772007B2 (ja) * 2011-01-24 2015-09-02 日亜化学工業株式会社 発光装置及び発光装置の製造方法
JP5582048B2 (ja) 2011-01-28 2014-09-03 日亜化学工業株式会社 発光装置
JP5797945B2 (ja) * 2011-06-21 2015-10-21 シチズン電子株式会社 Ｌｅｄランプ
JP5985846B2 (ja) * 2011-06-29 2016-09-06 Ｆｌｅｘｃｅｅｄ株式会社 発光素子搭載用基板及びｌｅｄパッケージ
JP2013084803A (ja) 2011-10-11 2013-05-09 Hitachi Cable Ltd 発光装置、発光素子パッケージ及び発光素子搭載用配線基板
JP2013110154A (ja) * 2011-11-17 2013-06-06 Sanken Electric Co Ltd 発光装置
JP2013135069A (ja) * 2011-12-26 2013-07-08 Hitachi Cable Ltd 発光素子搭載用配線基板、発光モジュール及び発光素子搭載用配線基板の製造方法
US9627572B2 (en) * 2012-04-25 2017-04-18 Kyocera Corporation Light receiving and emitting element module and sensor device using same

Also Published As

Publication number Publication date
EP2822046B1 (en) 2019-08-14
US20150001564A1 (en) 2015-01-01
CN104282822A (zh) 2015-01-14
US9231177B2 (en) 2016-01-05
CN104282822B (zh) 2018-09-11
EP2822046A1 (en) 2015-01-07
JP2015012206A (ja) 2015-01-19

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