JP6246785B2 - 活性化ガス流を用いてグラフェンを穿孔するための方法 - Google Patents

活性化ガス流を用いてグラフェンを穿孔するための方法 Download PDF

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JP6246785B2
JP6246785B2 JP2015501729A JP2015501729A JP6246785B2 JP 6246785 B2 JP6246785 B2 JP 6246785B2 JP 2015501729 A JP2015501729 A JP 2015501729A JP 2015501729 A JP2015501729 A JP 2015501729A JP 6246785 B2 JP6246785 B2 JP 6246785B2
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graphene sheet
graphene
activated gas
sheet
gas stream
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JP2015516357A (ja
JP2015516357A5 (enExample
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ピーター、ブイ．ベッドワース
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ロッキード・マーチン・コーポレーション
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/194—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2204/00—Structure or properties of graphene
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/842—Manufacture, treatment, or detection of nanostructure for carbon nanotubes or fullerenes
    • Y10S977/847—Surface modifications, e.g. functionalization, coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/888—Shaping or removal of materials, e.g. etching

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Composite Materials (AREA)
  • Manufacturing & Machinery (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Separation Using Semi-Permeable Membranes (AREA)
JP2015501729A 2012-03-21 2013-03-12 活性化ガス流を用いてグラフェンを穿孔するための方法 Expired - Fee Related JP6246785B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261613938P 2012-03-21 2012-03-21
US61/613,938 2012-03-21
PCT/US2013/030344 WO2013142133A1 (en) 2012-03-21 2013-03-12 Methods for perforating graphene using an activated gas stream and perforated graphene produced therefrom

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JP2015516357A JP2015516357A (ja) 2015-06-11
JP2015516357A5 JP2015516357A5 (enExample) 2017-04-13
JP6246785B2 true JP6246785B2 (ja) 2017-12-13

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US (1) US9567224B2 (enExample)
EP (1) EP2828196A1 (enExample)
JP (1) JP6246785B2 (enExample)
KR (1) KR20140146131A (enExample)
CN (1) CN104245577A (enExample)
AU (1) AU2013235643B2 (enExample)
CA (1) CA2865634A1 (enExample)
IL (1) IL234684A0 (enExample)
IN (1) IN2014DN07732A (enExample)
SG (1) SG11201405346RA (enExample)
WO (1) WO2013142133A1 (enExample)

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CN107921402A (zh) * 2015-08-05 2018-04-17 洛克希德马丁公司 石墨烯基材料的穿孔片
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CN105514121B (zh) * 2016-01-26 2019-03-15 武汉华星光电技术有限公司 一种tft阵列基板及其制作方法
EP3442697A4 (en) 2016-04-14 2020-03-18 Lockheed Martin Corporation SELECTIVE INTERFACE REDUCTION OF GRAPH DEFECTS
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JP2019519756A (ja) 2016-04-14 2019-07-11 ロッキード・マーチン・コーポレーション 欠陥形成または欠陥修復をその場で監視して制御する方法
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KR101934568B1 (ko) * 2016-11-25 2019-01-02 한국과학기술연구원 나노다공성 그래핀 막의 제조 방법
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CN114051430A (zh) * 2019-07-24 2022-02-15 国立大学法人大阪大学 烷烃脱氢催化剂、以及使用该催化剂的氢制造方法
CN110451496B (zh) * 2019-09-17 2021-04-20 北京石墨烯研究院 一种连续放量制备粉体石墨烯的方法
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US20130249147A1 (en) 2013-09-26
AU2013235643A1 (en) 2014-10-16
IN2014DN07732A (enExample) 2015-05-15
IL234684A0 (en) 2014-11-30
SG11201405346RA (en) 2014-10-30
CN104245577A (zh) 2014-12-24
EP2828196A1 (en) 2015-01-28
KR20140146131A (ko) 2014-12-24
JP2015516357A (ja) 2015-06-11
WO2013142133A1 (en) 2013-09-26
AU2013235643B2 (en) 2015-12-17
CA2865634A1 (en) 2013-09-26
US9567224B2 (en) 2017-02-14

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