KR20140146131A - 활성화 가스 스트림을 사용하여 그래핀을 천공하기 위한 방법들 및 그것으로부터 제조되는 천공된 그래핀 - Google Patents

활성화 가스 스트림을 사용하여 그래핀을 천공하기 위한 방법들 및 그것으로부터 제조되는 천공된 그래핀 Download PDF

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KR20140146131A
KR20140146131A KR1020147029287A KR20147029287A KR20140146131A KR 20140146131 A KR20140146131 A KR 20140146131A KR 1020147029287 A KR1020147029287 A KR 1020147029287A KR 20147029287 A KR20147029287 A KR 20147029287A KR 20140146131 A KR20140146131 A KR 20140146131A
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graphene
graphene sheet
gas stream
sheet
size
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Korean (ko)
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피터 브이. 배드워스
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록히드 마틴 코포레이션
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/194—After-treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2204/00—Structure or properties of graphene
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/842—Manufacture, treatment, or detection of nanostructure for carbon nanotubes or fullerenes
    • Y10S977/847—Surface modifications, e.g. functionalization, coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/888—Shaping or removal of materials, e.g. etching

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Composite Materials (AREA)
  • Manufacturing & Machinery (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Separation Using Semi-Permeable Membranes (AREA)
KR1020147029287A 2012-03-21 2013-03-12 활성화 가스 스트림을 사용하여 그래핀을 천공하기 위한 방법들 및 그것으로부터 제조되는 천공된 그래핀 Withdrawn KR20140146131A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261613938P 2012-03-21 2012-03-21
US61/613,938 2012-03-21
PCT/US2013/030344 WO2013142133A1 (en) 2012-03-21 2013-03-12 Methods for perforating graphene using an activated gas stream and perforated graphene produced therefrom

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KR20140146131A true KR20140146131A (ko) 2014-12-24

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US (1) US9567224B2 (enExample)
EP (1) EP2828196A1 (enExample)
JP (1) JP6246785B2 (enExample)
KR (1) KR20140146131A (enExample)
CN (1) CN104245577A (enExample)
AU (1) AU2013235643B2 (enExample)
CA (1) CA2865634A1 (enExample)
IL (1) IL234684A0 (enExample)
IN (1) IN2014DN07732A (enExample)
SG (1) SG11201405346RA (enExample)
WO (1) WO2013142133A1 (enExample)

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KR101934568B1 (ko) * 2016-11-25 2019-01-02 한국과학기술연구원 나노다공성 그래핀 막의 제조 방법
KR101835596B1 (ko) * 2017-03-20 2018-03-08 삼화콘덴서공업 주식회사 고용량 에너지 저장 커패시터
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CN110451496B (zh) * 2019-09-17 2021-04-20 北京石墨烯研究院 一种连续放量制备粉体石墨烯的方法
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US20130249147A1 (en) 2013-09-26
AU2013235643A1 (en) 2014-10-16
IN2014DN07732A (enExample) 2015-05-15
JP6246785B2 (ja) 2017-12-13
IL234684A0 (en) 2014-11-30
SG11201405346RA (en) 2014-10-30
CN104245577A (zh) 2014-12-24
EP2828196A1 (en) 2015-01-28
JP2015516357A (ja) 2015-06-11
WO2013142133A1 (en) 2013-09-26
AU2013235643B2 (en) 2015-12-17
CA2865634A1 (en) 2013-09-26
US9567224B2 (en) 2017-02-14

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Patent event date: 20141020

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
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WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid