JP6241943B2 - ボロンドープダイヤモンドナノ粒子の製造方法 - Google Patents
ボロンドープダイヤモンドナノ粒子の製造方法 Download PDFInfo
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- JP6241943B2 JP6241943B2 JP2014052173A JP2014052173A JP6241943B2 JP 6241943 B2 JP6241943 B2 JP 6241943B2 JP 2014052173 A JP2014052173 A JP 2014052173A JP 2014052173 A JP2014052173 A JP 2014052173A JP 6241943 B2 JP6241943 B2 JP 6241943B2
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- Prior art keywords
- boron
- diamond nanoparticles
- diamond
- mixture
- nanoparticles
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- 229910003460 diamond Inorganic materials 0.000 title claims description 52
- 239000010432 diamond Substances 0.000 title claims description 52
- 239000002105 nanoparticle Substances 0.000 title claims description 38
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 23
- 239000000203 mixture Substances 0.000 claims description 23
- 229910052796 boron Inorganic materials 0.000 claims description 22
- 238000010438 heat treatment Methods 0.000 claims description 17
- 239000002245 particle Substances 0.000 claims description 15
- 150000001639 boron compounds Chemical class 0.000 claims description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- 239000001257 hydrogen Substances 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- 238000000034 method Methods 0.000 description 8
- 238000002156 mixing Methods 0.000 description 6
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 4
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- 238000005087 graphitization Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- 238000010306 acid treatment Methods 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 229960002645 boric acid Drugs 0.000 description 2
- 235000010338 boric acid Nutrition 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000004570 mortar (masonry) Substances 0.000 description 2
- 229910021392 nanocarbon Inorganic materials 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000006228 supernatant Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- XDVOLDOITVSJGL-UHFFFAOYSA-N 3,7-dihydroxy-2,4,6,8,9-pentaoxa-1,3,5,7-tetraborabicyclo[3.3.1]nonane Chemical compound O1B(O)OB2OB(O)OB1O2 XDVOLDOITVSJGL-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005474 detonation Methods 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 238000007580 dry-mixing Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- VGTPKLINSHNZRD-UHFFFAOYSA-N oxoborinic acid Chemical compound OB=O VGTPKLINSHNZRD-UHFFFAOYSA-N 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
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- Carbon And Carbon Compounds (AREA)
Description
水素雰囲気下で、前記混合物を加熱し、該混合物中のダイヤモンドナノ粒子に前記ホウ素をドープする工程と、を有する、ボロンドープダイヤモンドナノ粒子の製造方法。
本発明の準備工程は、ホウ素又はホウ素化合物とダイヤモンドナノ粒子との混合物を準備する工程である。
ドープ工程は、水素雰囲気下で、ホウ素又はホウ素化合物とダイヤモンドナノ粒子との混合物を加熱し、該混合物中のダイヤモンドナノ粒子にホウ素をドープする工程である。ダイヤモンドナノ粒子は、粒径が小さいため、グラファイト化しやすい。しかし、本発明の製造方法は、水素雰囲気下で、混合物を加熱するため、ダイヤモンドナノ粒子がグラファイト化しにくい。これにより、本発明の製造方法は、グラファイト化を抑制して、ボロンドープダイヤモンドナノ粒子を得ることができる。
Claims (3)
- ホウ素又はホウ素化合物とダイヤモンドナノ粒子との混合物を準備する工程と、
水素雰囲気下で、前記混合物を加熱し、該混合物中のダイヤモンドナノ粒子に前記ホウ素をドープする工程と、を有する、ボロンドープダイヤモンドナノ粒子の製造方法。 - 前記ボロンドープダイヤモンドナノ粒子の平均粒径が100nm以下である、請求項1記載の製造方法。
- 前記加熱は、700〜1000℃で行う、請求項1又は2記載の製造方法。
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JP2014052173A JP6241943B2 (ja) | 2014-03-14 | 2014-03-14 | ボロンドープダイヤモンドナノ粒子の製造方法 |
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JP2014052173A JP6241943B2 (ja) | 2014-03-14 | 2014-03-14 | ボロンドープダイヤモンドナノ粒子の製造方法 |
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JP2015174793A JP2015174793A (ja) | 2015-10-05 |
JP6241943B2 true JP6241943B2 (ja) | 2017-12-06 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108977758A (zh) * | 2018-07-19 | 2018-12-11 | 北京安泰钢研超硬材料制品有限责任公司 | 脱钴金刚石复合片的强化处理方法及装置 |
WO2024044621A1 (en) * | 2022-08-23 | 2024-02-29 | San Jose State University Research Foundation | Boronated nanoscale substrate and uses thereof |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10799587B2 (en) * | 2016-05-11 | 2020-10-13 | Huan NIU | Ion implantation of neutron capture elements into nanodiamond particles to form composition for neutron capture therapy usage |
WO2019097815A1 (ja) | 2017-11-16 | 2019-05-23 | 株式会社ダイセル | キャパシタ用電極材料 |
SG11202108007RA (en) * | 2019-03-26 | 2021-08-30 | Daicel Corp | Heteroatom-doped nanodiamond |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7144753B2 (en) * | 2003-11-25 | 2006-12-05 | Board Of Trustees Of Michigan State University | Boron-doped nanocrystalline diamond |
JP4759315B2 (ja) * | 2004-05-21 | 2011-08-31 | 独立行政法人物質・材料研究機構 | 超電導性を有するホウ素ドープダイヤモンド薄膜 |
JP5376274B2 (ja) * | 2006-10-31 | 2013-12-25 | 三菱マテリアル株式会社 | 良導電性ダイヤモンド焼結体の製造方法 |
JP5376273B2 (ja) * | 2006-10-31 | 2013-12-25 | 三菱マテリアル株式会社 | ボロンドープダイヤモンド焼結体およびその製造方法 |
GB0816769D0 (en) * | 2008-09-12 | 2008-10-22 | Warwick Ventures | Boron-doped diamond |
JP5483228B2 (ja) * | 2008-10-20 | 2014-05-07 | 学校法人東京理科大学 | 導電性ダイヤモンド中空ファイバー膜及び導電性ダイヤモンド中空ファイバー膜の製造方法 |
JP5399118B2 (ja) * | 2009-04-13 | 2014-01-29 | 株式会社ダイセル | 表面修飾ナノダイヤモンド及びその製造法 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108977758A (zh) * | 2018-07-19 | 2018-12-11 | 北京安泰钢研超硬材料制品有限责任公司 | 脱钴金刚石复合片的强化处理方法及装置 |
CN108977758B (zh) * | 2018-07-19 | 2020-06-02 | 北京安泰钢研超硬材料制品有限责任公司 | 脱钴金刚石复合片的强化处理方法及装置 |
WO2024044621A1 (en) * | 2022-08-23 | 2024-02-29 | San Jose State University Research Foundation | Boronated nanoscale substrate and uses thereof |
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