JP6220643B2 - 有機発光素子用基板、その製造方法、及びこれを具備する有機発光装置 - Google Patents
有機発光素子用基板、その製造方法、及びこれを具備する有機発光装置 Download PDFInfo
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- JP6220643B2 JP6220643B2 JP2013237984A JP2013237984A JP6220643B2 JP 6220643 B2 JP6220643 B2 JP 6220643B2 JP 2013237984 A JP2013237984 A JP 2013237984A JP 2013237984 A JP2013237984 A JP 2013237984A JP 6220643 B2 JP6220643 B2 JP 6220643B2
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- organic light
- light emitting
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- glass
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- 239000000758 substrate Substances 0.000 title claims description 76
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 239000011521 glass Substances 0.000 claims description 69
- 238000000605 extraction Methods 0.000 claims description 50
- 239000002245 particle Substances 0.000 claims description 30
- 238000002834 transmittance Methods 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- 239000013078 crystal Substances 0.000 claims description 14
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- CNLWCVNCHLKFHK-UHFFFAOYSA-N aluminum;lithium;dioxido(oxo)silane Chemical compound [Li+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O CNLWCVNCHLKFHK-UHFFFAOYSA-N 0.000 claims description 8
- 229910000174 eucryptite Inorganic materials 0.000 claims description 8
- 229910052642 spodumene Inorganic materials 0.000 claims description 8
- 239000006018 Li-aluminosilicate Substances 0.000 claims description 7
- 229910052878 cordierite Inorganic materials 0.000 claims description 7
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 claims description 7
- 230000003746 surface roughness Effects 0.000 claims description 4
- 230000001376 precipitating effect Effects 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 description 20
- 230000008859 change Effects 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000020169 heat generation Effects 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000149 argon plasma sintering Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 238000007496 glass forming Methods 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000004965 Silica aerogel Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000004005 microsphere Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B32/00—Thermal after-treatment of glass products not provided for in groups C03B19/00, C03B25/00 - C03B31/00 or C03B37/00, e.g. crystallisation, eliminating gas inclusions or other impurities; Hot-pressing vitrified, non-porous, shaped glass products
- C03B32/02—Thermal crystallisation, e.g. for crystallising glass bodies into glass-ceramic articles
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
- C03C10/0018—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and monovalent metal oxide as main constituents
- C03C10/0027—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and monovalent metal oxide as main constituents containing SiO2, Al2O3, Li2O as main constituents
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
- C03C10/0036—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and a divalent metal oxide as main constituents
- C03C10/0045—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and a divalent metal oxide as main constituents containing SiO2, Al2O3 and MgO as main constituents
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C4/00—Compositions for glass with special properties
- C03C4/0028—Compositions for glass with special properties for crystal glass, e.g. lead-free crystal glass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Thermal Sciences (AREA)
- Dispersion Chemistry (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Glass Compositions (AREA)
Description
結晶促進促進剤を含むリチウムアルミノシリケート系ガラスを850℃で1時間熱処理して透明結晶化ガラスを製造した。そして、該製造した透明結晶化ガラスを対象として、透過率、反射率、及び結晶化度を測定した結果、最大の透過率は87.6%、反射率は8.43%、結晶化度は84%と測定された。
前記実施例1と同様な組成のガラスを850℃で2時間熱処理して透明結晶化ガラスを製造した。そして、該製造した透明結晶化ガラスを対象として、透過率、反射率、及び結晶化度を測定した結果、最大の透過率は87.9%、反射率は8.43%、結晶化度は87%と測定された。
前記実施例1と同様な組成のガラスを900℃で1時間熱処理して透明結晶化ガラスを製造した。そして、該製造した透明結晶化ガラスを対象として、透過率、反射率、及び結晶化度を測定した結果、最大の透過率は83.6%、反射率は9.06%、結晶化度は88%と測定された。
前記実施例1と同様な組成のガラスを1000℃で1時間熱処理して透明結晶化ガラスを製造した。そして、該製造した透明結晶化ガラスを対象として、透過率、反射率、及び結晶化度を測定した結果、最大の透過率は60.5%、反射率は24.07%、結晶化度は89%と測定された。
前記実施例1と同様な組成のガラスを対象として、熱処理前の透過率、反射率、及び結晶化度を測定した結果、最大の透過率は87.6%、反射率は8.0%、結晶化度は84%と測定された。
110 結晶化粒子
Claims (10)
- 有機発光素子が蒸着される基板であって、
透明結晶化ガラスからなり、内部に多数の結晶化粒子が分布されており、前記透明結晶化ガラスは10〜25体積%の非晶質構造を含むことを特徴とする有機発光素子用基板。 - 前記結晶化粒子は、0.01〜3μmの大きさを有することを特徴とする請求項1に記載の有機発光素子用基板。
- 前記透明結晶化ガラスは、リチウムアルミノシリケート系ガラスであることを特徴とする請求項1または2に記載の有機発光素子用基板。
- 前記結晶化粒子は、コーディエライト(cordierite)、シリカ(silica)、ユークリプタイト(eucryptite)、及びスポジュメン(spodumene)のうちの少なくとも一つの結晶相からなることを特徴とする請求項3に記載の有機発光素子用基板。
- 表面粗度(RRMS)が0.01μm以下であることを特徴とする請求項1〜4のいずれかに記載の有機発光素子用基板。
- 可視光透過率が50%以上であることを特徴とする請求項1〜5のいずれかに記載の有機発光素子用基板。
- 有機発光素子が蒸着される透明結晶化ガラスからなる基板を製造する方法であって、
結晶化粒子を析出させる結晶促進剤を含むマザーガラスを熱処理して、析出される前記結晶化粒子の大きさを制御することを含み、前記透明結晶化ガラスは10〜25体積%の非晶質構造を含むことを特徴とする有機発光素子用基板の製造方法。 - 前記マザーガラスを850℃〜1000℃で1〜2時間熱処理することを特徴とする請求項7に記載の有機発光素子用基板の製造方法。
- 前記結晶化粒子は、コーディエライト、シリカ、ユークリプタイト、及びスポジュメンのうちの少なくとも一つの結晶相からなることを特徴とする請求項7または8に記載の有機発光素子用基板の製造方法。
- 請求項1〜6のいずれかに記載の有機発光素子用基板を光取り出し基板として具備することを特徴とする有機発光装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2012-0131698 | 2012-11-20 | ||
KR1020120131698A KR101570968B1 (ko) | 2012-11-20 | 2012-11-20 | 유기 발광소자용 기판, 그 제조방법 및 이를 구비하는 유기 발광소자 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014103113A JP2014103113A (ja) | 2014-06-05 |
JP6220643B2 true JP6220643B2 (ja) | 2017-10-25 |
Family
ID=50728476
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013237984A Expired - Fee Related JP6220643B2 (ja) | 2012-11-20 | 2013-11-18 | 有機発光素子用基板、その製造方法、及びこれを具備する有機発光装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20140141958A1 (ja) |
JP (1) | JP6220643B2 (ja) |
KR (1) | KR101570968B1 (ja) |
CN (1) | CN103840086B (ja) |
TW (1) | TWI538275B (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6269933B2 (ja) * | 2013-01-04 | 2018-01-31 | 日本電気硝子株式会社 | ガラス板 |
WO2014112552A1 (ja) * | 2013-01-18 | 2014-07-24 | 日本電気硝子株式会社 | 結晶性ガラス基板及び結晶化ガラス基板並びに拡散板及びそれを備えた照明装置 |
KR102518130B1 (ko) | 2016-08-04 | 2023-04-06 | 삼성디스플레이 주식회사 | 유기발광 표시장치 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3498775A (en) * | 1966-06-17 | 1970-03-03 | Owens Illinois Inc | Method for producing a glass-ceramic article |
JP2001319774A (ja) * | 2000-05-10 | 2001-11-16 | Nippon Electric Glass Co Ltd | 無機elディスプレイ基板及びそれを用いた無機elディスプレイ |
US7071132B2 (en) * | 2000-07-07 | 2006-07-04 | Kabushiki Kaisha Ohara | Low expansion transparent glass ceramics |
KR20060036377A (ko) * | 2003-04-01 | 2006-04-28 | 코닝 인코포레이티드 | 램프 반사경 기판, 유리, 유리-세라믹 물질 및 이의제조방법 |
DE102004008824B4 (de) * | 2004-02-20 | 2006-05-04 | Schott Ag | Glaskeramik mit geringer Wärmeausdehnung sowie deren Verwendung |
JP2006030681A (ja) * | 2004-07-16 | 2006-02-02 | Fuji Electric Holdings Co Ltd | 有機elパネル |
JP4677743B2 (ja) * | 2004-08-05 | 2011-04-27 | 日本電気硝子株式会社 | 燃焼装置窓用Li2O−Al2O3−SiO2系透明結晶化ガラス |
JP4933863B2 (ja) * | 2005-10-25 | 2012-05-16 | 株式会社オハラ | 結晶化ガラスおよび結晶化ガラスの製造方法 |
JP4688633B2 (ja) * | 2005-10-27 | 2011-05-25 | 京セラ株式会社 | 光反射体、発光素子搭載用配線基板、および発光装置 |
JP4977406B2 (ja) * | 2006-06-06 | 2012-07-18 | 株式会社オハラ | 結晶化ガラス及び結晶化ガラスの製造方法 |
JP2007201502A (ja) * | 2007-04-20 | 2007-08-09 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
WO2009017035A1 (ja) * | 2007-07-27 | 2009-02-05 | Asahi Glass Co., Ltd. | 透光性基板、その製造方法、有機led素子及びその製造方法 |
JP2011116636A (ja) | 2009-11-05 | 2011-06-16 | Nippon Electric Glass Co Ltd | 結晶化ガラスの製造方法および結晶化ガラス |
EP2364957A1 (en) * | 2010-02-26 | 2011-09-14 | Corning Incorporated | Glass ceramics with bulk scattering properties and methods of making them |
-
2012
- 2012-11-20 KR KR1020120131698A patent/KR101570968B1/ko active IP Right Grant
-
2013
- 2013-11-18 JP JP2013237984A patent/JP6220643B2/ja not_active Expired - Fee Related
- 2013-11-19 US US14/084,268 patent/US20140141958A1/en not_active Abandoned
- 2013-11-20 CN CN201310586040.4A patent/CN103840086B/zh not_active Expired - Fee Related
- 2013-11-20 TW TW102142214A patent/TWI538275B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR101570968B1 (ko) | 2015-11-23 |
TWI538275B (zh) | 2016-06-11 |
TW201429018A (zh) | 2014-07-16 |
CN103840086A (zh) | 2014-06-04 |
CN103840086B (zh) | 2017-04-12 |
KR20140064403A (ko) | 2014-05-28 |
US20140141958A1 (en) | 2014-05-22 |
JP2014103113A (ja) | 2014-06-05 |
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