JP6219506B2 - ナノワイヤデバイスの活性領域の平坦化および規定のための絶縁層 - Google Patents

ナノワイヤデバイスの活性領域の平坦化および規定のための絶縁層 Download PDF

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JP6219506B2
JP6219506B2 JP2016521498A JP2016521498A JP6219506B2 JP 6219506 B2 JP6219506 B2 JP 6219506B2 JP 2016521498 A JP2016521498 A JP 2016521498A JP 2016521498 A JP2016521498 A JP 2016521498A JP 6219506 B2 JP6219506 B2 JP 6219506B2
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layer
insulating material
nanowire
nanowires
forming
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JP2016526789A (ja
JP2016526789A5 (https=
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スコット ブラッド ヘルナル，
スコット ブラッド ヘルナル，
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6534—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions

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  • Led Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
JP2016521498A 2013-06-18 2014-06-17 ナノワイヤデバイスの活性領域の平坦化および規定のための絶縁層 Expired - Fee Related JP6219506B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361836280P 2013-06-18 2013-06-18
US61/836,280 2013-06-18
PCT/US2014/042649 WO2014204906A1 (en) 2013-06-18 2014-06-17 Insulating layer for planarization and definition of the active region of a nanowire device

Publications (3)

Publication Number Publication Date
JP2016526789A JP2016526789A (ja) 2016-09-05
JP2016526789A5 JP2016526789A5 (https=) 2017-07-27
JP6219506B2 true JP6219506B2 (ja) 2017-10-25

Family

ID=52018440

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016521498A Expired - Fee Related JP6219506B2 (ja) 2013-06-18 2014-06-17 ナノワイヤデバイスの活性領域の平坦化および規定のための絶縁層

Country Status (5)

Country Link
US (2) US9224914B2 (https=)
EP (1) EP3011607A1 (https=)
JP (1) JP6219506B2 (https=)
TW (1) TW201515269A (https=)
WO (1) WO2014204906A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150103661A (ko) * 2012-10-26 2015-09-11 글로 에이비 나노와이어 led 구조 및 이를 제조하는 방법
TW201515269A (zh) * 2013-06-18 2015-04-16 Glo公司 用於平整化及界定奈米線裝置之活化區的絕緣層
WO2015089123A1 (en) 2013-12-13 2015-06-18 Glo Ab Use of dielectric film to reduce resistivity of transparent conductive oxide in nanowire leds
US20150206798A1 (en) * 2014-01-17 2015-07-23 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect Structure And Method of Forming
KR102164796B1 (ko) * 2014-08-28 2020-10-14 삼성전자주식회사 나노구조 반도체 발광소자
KR20160027610A (ko) * 2014-09-01 2016-03-10 삼성전자주식회사 나노구조 반도체 발광소자
KR102337405B1 (ko) * 2014-09-05 2021-12-13 삼성전자주식회사 나노구조 반도체 발광소자
US11515433B2 (en) 2018-01-09 2022-11-29 University Of Louisville Research Foundation, Inc. Semiconducting materials with surrounding radial p-n diodes
JP7137066B2 (ja) * 2018-10-23 2022-09-14 日亜化学工業株式会社 発光素子の製造方法
JP7543849B2 (ja) * 2020-10-30 2024-09-03 セイコーエプソン株式会社 発光装置およびプロジェクター

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4058937B2 (ja) * 2001-11-07 2008-03-12 松下電器産業株式会社 半導体発光装置及びその製造方法
US7335908B2 (en) 2002-07-08 2008-02-26 Qunano Ab Nanostructures and methods for manufacturing the same
US7132677B2 (en) 2004-02-13 2006-11-07 Dongguk University Super bright light emitting diode of nanorod array structure having InGaN quantum well and method for manufacturing the same
US7230286B2 (en) * 2005-05-23 2007-06-12 International Business Machines Corporation Vertical FET with nanowire channels and a silicided bottom contact
US20070158661A1 (en) 2006-01-12 2007-07-12 Rutgers, The State University Of New Jersey ZnO nanostructure-based light emitting device
CN101443265B (zh) 2006-03-08 2014-03-26 昆南诺股份有限公司 在硅上无金属合成外延半导体纳米线的方法
AU2007313096B2 (en) 2006-03-10 2011-11-10 Unm Rainforest Innovations Pulsed growth of GaN nanowires and applications in group III nitride semiconductor substrate materials and devices
WO2008140611A2 (en) 2006-12-18 2008-11-20 The Regents Of The University Of California Nanowire array-based light emitting diodes and lasers
EP2102899B1 (en) 2007-01-12 2020-11-11 QuNano AB Nitride nanowires and method of producing such
KR101524319B1 (ko) 2007-01-12 2015-06-10 큐나노 에이비 시준 리플렉터를 갖는 나노구조 ｌｅｄ 어레이
KR101356694B1 (ko) * 2007-05-10 2014-01-29 삼성전자주식회사 실리콘 나노와이어를 이용한 발광 다이오드 및 그 제조방법
KR20110039313A (ko) 2008-07-07 2011-04-15 글로 에이비 나노구조 ｌｅｄ
KR20100051970A (ko) 2008-11-10 2010-05-19 강형석 변기용 병원균 살균조성물 및 그 제조방법
SG186261A1 (en) * 2010-06-18 2013-01-30 Glo Ab Nanowire led structure and method for manufacturing the same
SG186312A1 (en) 2010-06-24 2013-02-28 Glo Ab Substrate with buffer layer for oriented nanowire growth
KR101710159B1 (ko) 2010-09-14 2017-03-08 삼성전자주식회사 Ⅲ족 질화물 나노로드 발광소자 및 그 제조 방법
KR101864195B1 (ko) * 2010-11-15 2018-06-01 엘지이노텍 주식회사 발광 소자
US8350251B1 (en) * 2011-09-26 2013-01-08 Glo Ab Nanowire sized opto-electronic structure and method for manufacturing the same
US8350249B1 (en) 2011-09-26 2013-01-08 Glo Ab Coalesced nanowire structures with interstitial voids and method for manufacturing the same
KR101891777B1 (ko) * 2012-06-25 2018-08-24 삼성전자주식회사 유전체 리플렉터를 구비한 발광소자 및 그 제조방법
TW201515269A (zh) * 2013-06-18 2015-04-16 Glo公司 用於平整化及界定奈米線裝置之活化區的絕緣層

Also Published As

Publication number Publication date
US9640723B2 (en) 2017-05-02
US20160172538A1 (en) 2016-06-16
JP2016526789A (ja) 2016-09-05
WO2014204906A1 (en) 2014-12-24
EP3011607A1 (en) 2016-04-27
US20140367638A1 (en) 2014-12-18
US9224914B2 (en) 2015-12-29
TW201515269A (zh) 2015-04-16

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