JP6212125B2 - アモルファス金属薄膜非線形抵抗器 - Google Patents
アモルファス金属薄膜非線形抵抗器 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims description 50
- 239000005300 metallic glass Substances 0.000 title claims description 42
- 239000012212 insulator Substances 0.000 claims description 66
- 238000000151 deposition Methods 0.000 claims description 23
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 239000010936 titanium Substances 0.000 claims description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 8
- 230000003746 surface roughness Effects 0.000 claims description 8
- 238000000231 atomic layer deposition Methods 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 6
- 229910052726 zirconium Inorganic materials 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 238000004891 communication Methods 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 239000007864 aqueous solution Substances 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 239000003595 mist Substances 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims 2
- 238000010894 electron beam technology Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000007800 oxidant agent Substances 0.000 claims 1
- 239000000463 material Substances 0.000 description 9
- 239000002772 conduction electron Substances 0.000 description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 5
- 229910010038 TiAl Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 238000004630 atomic force microscopy Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000313 electron-beam-induced deposition Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010893 electron trap Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
- H01C1/142—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors the terminals or tapping points being coated on the resistive element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
- H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/006—Thin film resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
- H01L28/24—Resistors with an active material comprising a refractory, transition or noble metal, metal compound or metal alloy, e.g. silicides, oxides, nitrides
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Thermistors And Varistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
Description
この出願の発明に関連する先行技術文献情報としては、以下のものがある(国際出願日以降国際段階で引用された文献及び他国に国内移行した際に引用された文献を含む)。
(先行技術文献)
(特許文献)
(特許文献1) 特開平07−122406号公報
(特許文献2) 米国特許第6,208,234号明細書
(特許文献3) 米国特許出願公開第2007/0229212号明細書
(特許文献4) 特開2006−032951号公報
(特許文献5) 特開平01−220473号公報
Claims (11)
- 対称な非線形電流電圧特性を有するアモルファス金属薄膜非線形抵抗器(amorphous metal thin−film nonlinear resistor:AMNR)であって、
アモルファス金属薄膜(amorphous metal thin−film:AMTF)相互接続体と、
前記相互接続体上に配置された絶縁体層と、
前記絶縁体層および相互接続体の選択された面上に配置された第1および第2の電気接点であって、各電気接点は、前記相互接続体の一部分と重なり合う少なくとも一部分をそれぞれ有し、前記第1の電気接点から前記絶縁体層および前記相互接続体を通って前記第2の電気接点まで電気通信を提供するものである、前記第1および第2の電気接点と
を有し、
前記第1および第2の電気接点間に印加された電圧は、印加された電圧に対して非線形かつその極性に対して対称に変化する電流を生じさせるものである、
アモルファス金属薄膜非線形抵抗器。 - 請求項1記載のアモルファス金属薄膜非線形抵抗器において、前記アモルファス金属薄膜相互接続体は、アルミニウム、チタン、ジルコニウム、銅、ニッケル、タンタル、タングステン、ホウ素、またはケイ素のうちの少なくとも2つの元素を含有するものであるアモルファス金属薄膜非線形抵抗器。
- 請求項1〜2のいずれか一項に記載のアモルファス金属薄膜非線形抵抗器において、前記アモルファス金属薄膜相互接続体は、当該相互接続体の原子組成の5%未満を構成するレベルの酸素、窒素、および炭素を含むものであるアモルファス金属薄膜非線形抵抗器。
- 請求項1〜3のいずれか一項に記載のアモルファス金属薄膜非線形抵抗器において、前記絶縁体は、酸素、およびアルミニウム、チタン、ジルコニウム、ハフニウム、タンタル、またはケイ素のうちの1つの元素を含有する酸化物質を含むものであるアモルファス金属薄膜非線形抵抗器。
- 請求項1〜4のいずれか一項に記載のアモルファス金属薄膜非線形抵抗器において、前記電気接点は、アルミニウム、クロム、モリブデン、チタン、銅、およびニッケルといった金属元素、インジウムスズ酸化物、ならびにこれらの組み合わせからなる導電性材料を含むものであるアモルファス金属薄膜非線形抵抗器。
- 請求項1〜5のいずれか一項に記載のアモルファス金属薄膜非線形抵抗器において、前記アモルファス金属薄膜相互接続体は、約2nm未満の二乗平均表面粗さを有するものであるアモルファス金属薄膜非線形抵抗器。
- 請求項1〜6のいずれか一項に記載のアモルファス金属薄膜非線形抵抗器において、前記アモルファス金属薄膜相互接続体は、125μΩcmよりも大きく400μΩcmよりも小さい抵抗率を有するものであるアモルファス金属薄膜非線形抵抗器。
- アモルファス金属薄膜非線形抵抗器を製造する方法であって、
基板上にアモルファス金属薄膜相互接続体を堆積する工程と、
前記相互接続体上に絶縁体層を堆積する工程と、
前記絶縁体層および相互接続体の選択された面上に第1および第2の電気接点を形成する工程であって、各電気接点は、前記相互接続体の一部分と重なり合う少なくとも一部分をそれぞれ有し、前記第1の電気接点から前記絶縁体層および前記相互接続体を通って前記第2の接点まで電気通信を提供するものである、前記第1および第2の電気接点を形成する工程と、
を有し、
前記第1および第2の電気接点間に印加された電圧は、印加された電圧に対して非線形かつその極性に対して対称に変化する電流を生じさせるものである、
方法。 - 請求項8記載の方法において、前記アモルファス金属薄膜相互接続体層を堆積する工程は、直流マグネトロンスパッタリングおよび高周波マグネトロンスパッタリングのうちの1若しくはそれ以上を有するものである方法。
- 請求項8〜9のいずれか一項に記載の方法において、前記絶縁体層を堆積する工程は、原子層堆積、プラズマ促進化学蒸着、高周波マグネトロンスパッタリング、水溶液堆積、およびミスト堆積のうちの1若しくはそれ以上を有するものである方法。
- 請求項8〜10のいずれか一項に記載の方法において、前記第1および第2の電気接点を形成する工程は、加熱蒸着、直流マグネトロンスパッタリング、高周波マグネトロンスパッタリング、および電子ビーム蒸着のうちの1若しくはそれ以上を有するものである方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261725291P | 2012-11-12 | 2012-11-12 | |
US61/725,291 | 2012-11-12 | ||
PCT/US2013/067443 WO2014074360A1 (en) | 2012-11-12 | 2013-10-30 | Amorphous metal thin-film non-linear resistor |
Publications (3)
Publication Number | Publication Date |
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JP2016502268A JP2016502268A (ja) | 2016-01-21 |
JP2016502268A5 JP2016502268A5 (ja) | 2016-12-08 |
JP6212125B2 true JP6212125B2 (ja) | 2017-10-11 |
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Country Status (6)
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US (1) | US9099230B2 (ja) |
JP (1) | JP6212125B2 (ja) |
KR (1) | KR102155920B1 (ja) |
CN (1) | CN105264618B (ja) |
TW (1) | TWI532063B (ja) |
WO (1) | WO2014074360A1 (ja) |
Families Citing this family (10)
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WO2014057864A1 (ja) * | 2012-10-10 | 2014-04-17 | 日本碍子株式会社 | 電圧非直線性抵抗素子 |
CN104871262A (zh) * | 2012-11-29 | 2015-08-26 | 日本碍子株式会社 | 电压非线性电阻元件 |
US9419181B2 (en) * | 2013-05-13 | 2016-08-16 | Infineon Technologies Dresden Gmbh | Electrode, an electronic device, and a method for manufacturing an optoelectronic device |
KR102535073B1 (ko) * | 2015-07-24 | 2023-05-19 | 오레곤 스테이트 유니버시티 | 비결정질 금속 비선형 저항기를 능동형 서브 픽셀 디바이스로서 사용하는 인-플레인 스위칭 액정 디스플레이 백플레인 |
CN108352358B (zh) * | 2015-10-13 | 2022-07-26 | 非结晶公司 | 非晶金属薄膜非线性电阻器 |
US10672898B2 (en) | 2016-07-07 | 2020-06-02 | Amorphyx, Incorporated | Amorphous metal hot electron transistor |
KR20240090913A (ko) | 2018-03-30 | 2024-06-21 | 아모르픽스, 인크 | 비정질 금속 박막 트랜지스터 |
WO2020118268A1 (en) | 2018-12-07 | 2020-06-11 | Amorphyx, Incorporated | Methods and circuits for diode-based display backplanes and electronic displays |
US12075656B2 (en) | 2020-06-12 | 2024-08-27 | Amorphyx, Incorporated | Circuits including non-linear components for electronic devices |
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JP2010003742A (ja) * | 2008-06-18 | 2010-01-07 | Fujitsu Microelectronics Ltd | 半導体装置、及び薄膜キャパシタの製造方法 |
KR20100096625A (ko) | 2009-02-25 | 2010-09-02 | 삼성전기주식회사 | 커패시터 및 그 제조방법 |
US8436337B2 (en) | 2009-05-12 | 2013-05-07 | The State of Oregon Acting By and Through The State Board of Higher Education on Behalf of Oregon State Unitiversity | Amorphous multi-component metallic thin films for electronic devices |
US8890287B2 (en) | 2009-05-29 | 2014-11-18 | Power Gold LLC | Integrated nano-farad capacitors and method of formation |
US8400257B2 (en) * | 2010-08-24 | 2013-03-19 | Stmicroelectronics Pte Ltd | Via-less thin film resistor with a dielectric cap |
WO2012129176A1 (en) * | 2011-03-18 | 2012-09-27 | The State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State University | Amorphous multi-component metal/metal oxide nanolaminate metamaterials and devices based thereon |
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