JP6204378B2 - 溶液処理可能な酸化タングステン緩衝層及びこれを含む電子機器 - Google Patents

溶液処理可能な酸化タングステン緩衝層及びこれを含む電子機器 Download PDF

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JP6204378B2
JP6204378B2 JP2014557955A JP2014557955A JP6204378B2 JP 6204378 B2 JP6204378 B2 JP 6204378B2 JP 2014557955 A JP2014557955 A JP 2014557955A JP 2014557955 A JP2014557955 A JP 2014557955A JP 6204378 B2 JP6204378 B2 JP 6204378B2
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water
composition
solvent
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tungsten oxide
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アルベルト リューヒンガー ノルマン
アルベルト リューヒンガー ノルマン
クラウデ ハリム ザームエル
クラウデ ハリム ザームエル
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アファンタマ アクチェンゲゼルシャフト
アファンタマ アクチェンゲゼルシャフト
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G41/00—Compounds of tungsten
    • C01G41/02—Oxides; Hydroxides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/006—Surface treatment of glass, not in the form of fibres or filaments, by coating with materials of composite character
    • C03C17/007—Surface treatment of glass, not in the form of fibres or filaments, by coating with materials of composite character containing a dispersed phase, e.g. particles, fibres or flakes, in a continuous phase
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    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
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    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/24—Electrically-conducting paints
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    • C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/20—Diluents or solvents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
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    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
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    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/21—Oxides
    • C03C2217/219—CrOx, MoOx, WOx
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/40—Coatings comprising at least one inhomogeneous layer
    • C03C2217/42—Coatings comprising at least one inhomogeneous layer consisting of particles only
    • C—CHEMISTRY; METALLURGY
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    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C08K3/22—Oxides; Hydroxides of metals
    • C08K2003/2258—Oxides; Hydroxides of metals of tungsten
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    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
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JP2014557955A 2012-02-22 2013-02-15 溶液処理可能な酸化タングステン緩衝層及びこれを含む電子機器 Active JP6204378B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP12001157.2A EP2631008A1 (en) 2012-02-22 2012-02-22 Solution-processable tungsten oxide buffer layers and electronics comprising same
EP12001157.2 2012-02-22
PCT/CH2013/000032 WO2013123605A1 (en) 2012-02-22 2013-02-15 Solution-processable tungsten oxide buffer layers and electronics comprising same

Publications (3)

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JP2015517198A JP2015517198A (ja) 2015-06-18
JP2015517198A5 JP2015517198A5 (cg-RX-API-DMAC10.html) 2016-03-17
JP6204378B2 true JP6204378B2 (ja) 2017-09-27

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US (1) US9683111B2 (cg-RX-API-DMAC10.html)
EP (2) EP2631008A1 (cg-RX-API-DMAC10.html)
JP (1) JP6204378B2 (cg-RX-API-DMAC10.html)
KR (1) KR102017092B1 (cg-RX-API-DMAC10.html)
CN (1) CN104245124B (cg-RX-API-DMAC10.html)
WO (1) WO2013123605A1 (cg-RX-API-DMAC10.html)

Families Citing this family (9)

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Publication number Priority date Publication date Assignee Title
JP2014103290A (ja) * 2012-11-21 2014-06-05 Konica Minolta Inc 有機エレクトロルミネッセンス素子、有機エレクトロルミネッセンス素子の製造方法及び金属酸化物粒子含有組成物
FR3013719B1 (fr) * 2013-11-26 2018-01-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Encre pour former des couches p dans des dispositifs electroniques organiques
EP3328961B1 (en) 2015-07-31 2019-04-03 Avantama AG Luminescent crystals and manufacturing thereof
WO2019030269A1 (en) 2017-08-09 2019-02-14 Basf Se COMPOSITIONS COMPRISING DISPERSED NANOPARTICLES OF ELECTROCHROMIC OXIDE
CN108003664B (zh) * 2017-12-04 2020-09-11 瑞彩科技股份有限公司 一种吸收红外的光热效应珠光颜料及其制备方法
WO2022027017A1 (en) * 2020-07-27 2022-02-03 University Of Delaware Method to thermo-reversibly control light and heat flow with bicontinuous micro-domain
JP7379306B2 (ja) * 2020-09-28 2023-11-14 東芝マテリアル株式会社 エレクトロクロミック素子
KR20220095392A (ko) 2020-12-29 2022-07-07 삼성디스플레이 주식회사 나노 입자 잉크 조성물, 발광 소자 및 이의 제조 방법
WO2026155026A1 (ja) * 2025-01-20 2026-07-23 Toppanホールディングス株式会社 インクジェットインク組成物、電子輸送層、積層体、表示装置、及び表示装置の製造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5165992A (en) * 1991-07-02 1992-11-24 Hoya Corporation Hard coating film and optical elements having such coating film
JPH05331304A (ja) * 1992-06-04 1993-12-14 Nikon Corp コーティング組成物およびそれで被覆されたレンズ
JP2611093B2 (ja) * 1992-07-07 1997-05-21 ホーヤ株式会社 硬化膜を有する光学部材
JP3201654B2 (ja) * 1992-07-07 2001-08-27 ホーヤ株式会社 コーティング組成物
JP4315642B2 (ja) * 2002-05-17 2009-08-19 旭化成ケミカルズ株式会社 抽出方法
US7708974B2 (en) * 2002-12-10 2010-05-04 Ppg Industries Ohio, Inc. Tungsten comprising nanomaterials and related nanotechnology
JP2007094019A (ja) * 2005-09-29 2007-04-12 Kinki Sharyo Co Ltd 広告吊り具
EP1984535A1 (en) 2006-02-17 2008-10-29 NM Tech. Ltd. Nanomaterials and Microdevices Tech. A method for preparing nanocrystalline transparent films of tungsten oxide
JP2008041894A (ja) * 2006-08-04 2008-02-21 Matsushita Electric Ind Co Ltd 有機エレクトロルミネッセント素子およびその製造方法
US20070290604A1 (en) 2006-06-16 2007-12-20 Matsushita Electric Industrial Co., Ltd. Organic electroluminescent device and method of producing the same
EP2048116A1 (en) * 2007-10-09 2009-04-15 ChemIP B.V. Dispersion of nanoparticles in organic solvents
JP5641926B2 (ja) 2008-03-04 2014-12-17 株式会社東芝 水系分散液とそれを用いた塗料
JP5104538B2 (ja) * 2008-05-16 2012-12-19 大日本印刷株式会社 有機エレクトロルミネッセンス素子用基板および有機エレクトロルミネッセンス素子ならびにそれらの製造方法
EP2360220B1 (en) * 2008-11-13 2015-03-18 Sumitomo Metal Mining Co., Ltd. Infrared blocking particle, method for producing the same, infrared blocking particle dispersion using the same, and infrared blocking base
JP2010270191A (ja) 2009-05-20 2010-12-02 Tokuyama Corp コーティング組成物および光学物品
CN103053042B (zh) 2010-08-06 2016-02-24 株式会社日本有机雷特显示器 有机el元件及其制造方法
EP2781562B1 (en) * 2013-03-20 2016-01-20 Agfa-Gevaert A method to prepare a metallic nanoparticle dispersion

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US9683111B2 (en) 2017-06-20
CN104245124A (zh) 2014-12-24
CN104245124B (zh) 2017-08-29
EP2817091A1 (en) 2014-12-31
US20150064446A1 (en) 2015-03-05
KR102017092B1 (ko) 2019-09-02
KR20140125842A (ko) 2014-10-29
EP2817091B1 (en) 2016-11-30
WO2013123605A1 (en) 2013-08-29
JP2015517198A (ja) 2015-06-18
EP2631008A1 (en) 2013-08-28

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