JP6203154B2 - 有機分子メモリ - Google Patents

有機分子メモリ Download PDF

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Publication number
JP6203154B2
JP6203154B2 JP2014193009A JP2014193009A JP6203154B2 JP 6203154 B2 JP6203154 B2 JP 6203154B2 JP 2014193009 A JP2014193009 A JP 2014193009A JP 2014193009 A JP2014193009 A JP 2014193009A JP 6203154 B2 JP6203154 B2 JP 6203154B2
Authority
JP
Japan
Prior art keywords
organic molecule
electrode
organic
molecular
energy level
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2014193009A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016066640A5 (enExample
JP2016066640A (ja
Inventor
秀之 西沢
秀之 西沢
田中　裕介
裕介 田中
鋼児 浅川
鋼児 浅川
真島　豊
豊 真島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kioxia Corp
Original Assignee
Toshiba Memory Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Memory Corp filed Critical Toshiba Memory Corp
Priority to JP2014193009A priority Critical patent/JP6203154B2/ja
Priority to US14/843,229 priority patent/US9412944B2/en
Publication of JP2016066640A publication Critical patent/JP2016066640A/ja
Publication of JP2016066640A5 publication Critical patent/JP2016066640A5/ja
Application granted granted Critical
Publication of JP6203154B2 publication Critical patent/JP6203154B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/50—Bistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/701—Organic molecular electronic devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/671—Organic radiation-sensitive molecular electronic devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/381—Metal complexes comprising a group IIB metal element, e.g. comprising cadmium, mercury or zinc
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8822—Sulfides, e.g. CuS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/15—Current-voltage curve
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Electroluminescent Light Sources (AREA)
JP2014193009A 2014-09-22 2014-09-22 有機分子メモリ Expired - Fee Related JP6203154B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014193009A JP6203154B2 (ja) 2014-09-22 2014-09-22 有機分子メモリ
US14/843,229 US9412944B2 (en) 2014-09-22 2015-09-02 Organic molecular memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014193009A JP6203154B2 (ja) 2014-09-22 2014-09-22 有機分子メモリ

Publications (3)

Publication Number Publication Date
JP2016066640A JP2016066640A (ja) 2016-04-28
JP2016066640A5 JP2016066640A5 (enExample) 2016-12-01
JP6203154B2 true JP6203154B2 (ja) 2017-09-27

Family

ID=55526560

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014193009A Expired - Fee Related JP6203154B2 (ja) 2014-09-22 2014-09-22 有機分子メモリ

Country Status (2)

Country Link
US (1) US9412944B2 (enExample)
JP (1) JP6203154B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6158013B2 (ja) * 2013-09-24 2017-07-05 株式会社東芝 有機分子メモリ
JP2019054207A (ja) * 2017-09-19 2019-04-04 東芝メモリ株式会社 記憶装置及び記憶装置の製造方法
JP2023081627A (ja) * 2021-12-01 2023-06-13 キオクシア株式会社 有機分子メモリ

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040191567A1 (en) 2002-09-03 2004-09-30 Caballero Gabriel Joseph Light emitting molecules and organic light emitting devices including light emitting molecules
US7807991B2 (en) * 2003-08-19 2010-10-05 Fuji Electric Holdings Co., Ltd. Switching element
US20070126001A1 (en) * 2005-12-05 2007-06-07 Sung-Yool Choi Organic semiconductor device and method of fabricating the same
JP2008066542A (ja) 2006-09-07 2008-03-21 Univ Chuo 金属錯体化合物、電子素子、デバイス、電子素子の駆動方法
JP5390554B2 (ja) 2011-03-24 2014-01-15 株式会社東芝 有機分子メモリ
JP5717490B2 (ja) 2011-03-24 2015-05-13 株式会社東芝 有機分子メモリ
JP2013197268A (ja) * 2012-03-19 2013-09-30 Toshiba Corp 不揮発性半導体記憶装置
JP2013197363A (ja) * 2012-03-21 2013-09-30 Toshiba Corp 不揮発性半導体記憶装置およびその製造方法
JP6158013B2 (ja) * 2013-09-24 2017-07-05 株式会社東芝 有機分子メモリ

Also Published As

Publication number Publication date
US9412944B2 (en) 2016-08-09
US20160087203A1 (en) 2016-03-24
JP2016066640A (ja) 2016-04-28

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