JP6200849B2 - プラズマ処理装置およびドライエッチング方法 - Google Patents

プラズマ処理装置およびドライエッチング方法 Download PDF

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JP6200849B2
JP6200849B2 JP2014092095A JP2014092095A JP6200849B2 JP 6200849 B2 JP6200849 B2 JP 6200849B2 JP 2014092095 A JP2014092095 A JP 2014092095A JP 2014092095 A JP2014092095 A JP 2014092095A JP 6200849 B2 JP6200849 B2 JP 6200849B2
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etching
wafer
film
amount
frequency power
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JP2015211139A5 (enExample
JP2015211139A (ja
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栗原　優
優 栗原
森　政士
政士 森
荒瀬　高男
高男 荒瀬
慎也 河村
慎也 河村
忠雄 森本
忠雄 森本
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Hitachi High Tech Corp
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JP2014092095A 2014-04-25 2014-04-25 プラズマ処理装置およびドライエッチング方法 Active JP6200849B2 (ja)

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JP2015211139A JP2015211139A (ja) 2015-11-24
JP2015211139A5 JP2015211139A5 (enExample) 2017-01-19
JP6200849B2 true JP6200849B2 (ja) 2017-09-20

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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102746996B1 (ko) * 2016-01-20 2024-12-27 어플라이드 머티어리얼스, 인코포레이티드 측방향 하드마스크 리세스 감소를 위한 하이브리드 탄소 하드마스크
JPWO2018037799A1 (ja) * 2016-08-25 2019-06-20 日本ゼオン株式会社 プラズマエッチング方法
JP6928548B2 (ja) * 2017-12-27 2021-09-01 東京エレクトロン株式会社 エッチング方法
US20200203234A1 (en) * 2018-12-14 2020-06-25 Xia Tai Xin Semiconductor (Qing Dao) Ltd. Method of forming high aspect ratio features in semiconductor substrate
JP6959999B2 (ja) * 2019-04-19 2021-11-05 株式会社日立ハイテク プラズマ処理方法
JP7296277B2 (ja) * 2019-08-22 2023-06-22 東京エレクトロン株式会社 エッチングする方法、デバイス製造方法、及びプラズマ処理装置
WO2021162871A1 (en) * 2020-02-13 2021-08-19 Lam Research Corporation High aspect ratio etch with infinite selectivity
JP2023514831A (ja) 2020-02-19 2023-04-11 ラム リサーチ コーポレーション グラフェン集積化
US11295960B1 (en) * 2021-03-09 2022-04-05 Hitachi High-Tech Corporation Etching method
WO2023199371A1 (ja) * 2022-04-11 2023-10-19 株式会社日立ハイテク プラズマ処理方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4723871B2 (ja) * 2004-06-23 2011-07-13 株式会社日立ハイテクノロジーズ ドライエッチング装置
JP2008071951A (ja) * 2006-09-14 2008-03-27 Oki Electric Ind Co Ltd 半導体装置の製造方法
JP5491648B2 (ja) * 2006-10-06 2014-05-14 東京エレクトロン株式会社 プラズマエッチング装置およびプラズマエッチング方法
JP2009193989A (ja) * 2008-02-12 2009-08-27 Tokyo Electron Ltd プラズマエッチング方法、プラズマエッチング装置及びコンピュータ記憶媒体
JP2010205967A (ja) * 2009-03-04 2010-09-16 Tokyo Electron Ltd プラズマエッチング方法、プラズマエッチング装置及びコンピュータ記憶媒体

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