JP6195974B2 - 高安定スピントロニクスメモリ - Google Patents
高安定スピントロニクスメモリ Download PDFInfo
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- JP6195974B2 JP6195974B2 JP2016505444A JP2016505444A JP6195974B2 JP 6195974 B2 JP6195974 B2 JP 6195974B2 JP 2016505444 A JP2016505444 A JP 2016505444A JP 2016505444 A JP2016505444 A JP 2016505444A JP 6195974 B2 JP6195974 B2 JP 6195974B2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/329—Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/101—Semiconductor Hall-effect devices
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
Description
Claims (19)
- 磁化自由層、磁化固定層、および前記自由層と前記固定層との間のトンネル障壁を含む磁気トンネル接合(MTJ)と、
前記自由層の第2の面に直に接触する酸化物層と、
第1材料および第2材料の複数の交互層と
を備え、
前記トンネル障壁は、前記自由層の第1の面に直に接触し、
前記トンネル障壁は、酸化物を含み、第1面積抵抗(RA)積を有し、前記酸化物層は、前記第1RA積より低い第2RA積を有し、
前記第1の面は、前記第2の面に対して正反対であり、
前記複数の交互層の1つは、前記自由層が前記酸化物層に接触するのと反対側で前記酸化物層に直に接触し、
前記第1材料の層上の前記第2材料の層は、前記第1材料の層と直に接触し、
前記第2材料の層上の前記第1材料の層は、前記第2材料の層と直に接触する、装置。 - 前記トンネル障壁は、酸化マグネシウムを含み、前記酸化物層は、酸化タングステン、酸化バナジウム、酸化インジウム、酸化アルミニウム、酸化ルテニウム、酸化タンタルの少なくとも1つを含む、請求項1に記載の装置。
- 前記第2RA積は、10mΩ・cm2未満である、請求項2に記載の装置。
- 前記第2の面は、主に平面に位置付けられ、前記自由層の前記平面に直交する厚さは、2nm未満である、請求項3に記載の装置。
- 前記トンネル障壁の厚さは、3nm未満であり、かつ前記自由層の前記厚さよりも大きい、請求項4に記載の装置。
- 前記自由層は、コバルト、鉄、およびホウ素を含む、請求項2から5の何れか1つに記載の装置。
- 前記MTJを含む垂直スピン注入磁化反転メモリ(STT)を備える、請求項1から6の何れか1つに記載の装置。
- 前記第2の面は、平面であり、前記自由層の前記平面に直交する厚さは、前記トンネル障壁の厚さ未満である、請求項1から7の何れか1つに記載の装置。
- 前記トンネル障壁は、第1金属を含み、前記酸化物層は、前記第1金属と同じでない第2金属を含む、請求項1から8の何れか1つに記載の装置。
- 前記酸化物層、前記固定層、前記自由層、およびトンネル障壁は、全て薄膜である、請求項1から9の何れか1つに記載の装置。
- 前記第2RA積は、前記第1RA積の10%未満である、請求項1から10の何れか1つに記載の装置。
- 前記MTJは、垂直異方性を有する、請求項1から11の何れか1つに記載の装置。
- 磁化自由層、磁化固定層、および前記自由層と前記固定層との間のトンネル障壁層を含む磁気トンネル接合(MTJ)を基板上に形成する段階であって、前記トンネル障壁層は、前記自由層の第1の面に直に接触する、段階と、
前記自由層の第2の面に直接接触する酸化物層を形成する段階と、
第1材料および第2材料の複数の交互層を形成する段階と
を備え、
前記トンネル障壁層は、第1面積抵抗(RA)積を有し、前記酸化物層は、前記第1RA積より低い第2RA積を有し、
前記複数の交互層の1つは、前記自由層が前記酸化物層に接触するのと反対側で前記酸化物層に直に接触し、
前記第1材料の層上の前記第2材料の層は、前記第1材料の層と直に接触し、
前記第2材料の層上の前記第1材料の層は、前記第2材料の層と直に接触する、方法。 - 前記酸化物層、前記固定層、前記自由層、および前記トンネル障壁層は、全て薄膜である、請求項13に記載の方法。
- 前記第2の面は、主に平面に位置付けられ、前記自由層の前記平面に直交する厚さは、2nm未満であり、前記トンネル障壁層の厚さは、3nm未満であり、かつ前記自由層の前記厚さよりも大きい、請求項14に記載の方法。
- 前記第2RA積は、前記第1RA積の10%未満である、請求項14または15に記載の方法。
- 垂直スピン注入磁化反転メモリ(STTM)であって、
自由層と固定層との間のトンネル障壁層を含み、前記自由層の一面に直に接触する磁気トンネル接合(MTJ)と、
前記自由層の反対の面に直に接触する酸化物層と、
第1材料および第2材料の複数の交互層と
を備え、
前記トンネル障壁層は、第1面積抵抗(RA)積を有し、前記酸化物層は、前記第1RA積より低い第2RA積を有し、
前記複数の交互層の1つは、前記自由層が前記酸化物層に接触するのと反対側で前記酸化物層に直に接触し、
前記第1材料の層上の前記第2材料の層は、前記第1材料の層と直に接触し、
前記第2材料の層上の前記第1材料の層は、前記第2材料の層と直に接触する、メモリ。 - 前記第2RA積は、前記第1RA積の10%未満である、請求項17に記載のメモリ。
- 前記酸化物層、前記固定層、前記自由層、および前記トンネル障壁は、全て薄膜である、請求項18に記載のメモリ。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2013/034506 WO2014158178A1 (en) | 2013-03-28 | 2013-03-28 | High stability spintronic memory |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017157029A Division JP6449392B2 (ja) | 2017-08-16 | 2017-08-16 | 装置、方法およびメモリ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016518021A JP2016518021A (ja) | 2016-06-20 |
JP6195974B2 true JP6195974B2 (ja) | 2017-09-13 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016505444A Active JP6195974B2 (ja) | 2013-03-28 | 2013-03-28 | 高安定スピントロニクスメモリ |
Country Status (8)
Country | Link |
---|---|
US (2) | US9231194B2 (ja) |
JP (1) | JP6195974B2 (ja) |
KR (1) | KR102076086B1 (ja) |
CN (1) | CN105308683B (ja) |
DE (1) | DE112013006657T5 (ja) |
GB (1) | GB2526958B (ja) |
TW (1) | TWI608641B (ja) |
WO (1) | WO2014158178A1 (ja) |
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KR102397904B1 (ko) | 2015-09-17 | 2022-05-13 | 삼성전자주식회사 | 낮은 보론 농도를 갖는 영역 및 높은 보론 농도를 갖는 영역을 포함하는 자유 층, 자기 저항 셀, 및 자기 저항 메모리 소자, 및 그 제조 방법 |
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JP6832818B2 (ja) * | 2017-09-21 | 2021-02-24 | キオクシア株式会社 | 磁気記憶装置 |
US10522744B2 (en) * | 2017-10-10 | 2019-12-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | High thermal stability by doping of oxide capping layer for spin torque transfer (STT) magnetic random access memory (MRAM) applications |
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-
2013
- 2013-03-28 DE DE112013006657.2T patent/DE112013006657T5/de active Pending
- 2013-03-28 US US13/996,603 patent/US9231194B2/en not_active Expired - Fee Related
- 2013-03-28 JP JP2016505444A patent/JP6195974B2/ja active Active
- 2013-03-28 WO PCT/US2013/034506 patent/WO2014158178A1/en active Application Filing
- 2013-03-28 GB GB1514054.4A patent/GB2526958B/en active Active
- 2013-03-28 CN CN201380074016.0A patent/CN105308683B/zh not_active Expired - Fee Related
- 2013-03-28 KR KR1020157022420A patent/KR102076086B1/ko active IP Right Grant
-
2014
- 2014-03-24 TW TW103110902A patent/TWI608641B/zh active
-
2015
- 2015-12-29 US US14/982,128 patent/US9735348B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2016518021A (ja) | 2016-06-20 |
US9231194B2 (en) | 2016-01-05 |
US20140291663A1 (en) | 2014-10-02 |
KR20150136055A (ko) | 2015-12-04 |
TWI608641B (zh) | 2017-12-11 |
GB2526958A (en) | 2015-12-09 |
WO2014158178A1 (en) | 2014-10-02 |
US9735348B2 (en) | 2017-08-15 |
GB2526958B (en) | 2020-11-18 |
TW201507223A (zh) | 2015-02-16 |
DE112013006657T5 (de) | 2015-11-26 |
CN105308683B (zh) | 2018-03-13 |
KR102076086B1 (ko) | 2020-02-11 |
GB201514054D0 (en) | 2015-09-23 |
US20160133829A1 (en) | 2016-05-12 |
CN105308683A (zh) | 2016-02-03 |
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