JP6190192B2 - 放射線撮像装置および放射線撮像表示システム - Google Patents

放射線撮像装置および放射線撮像表示システム Download PDF

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Publication number
JP6190192B2
JP6190192B2 JP2013147742A JP2013147742A JP6190192B2 JP 6190192 B2 JP6190192 B2 JP 6190192B2 JP 2013147742 A JP2013147742 A JP 2013147742A JP 2013147742 A JP2013147742 A JP 2013147742A JP 6190192 B2 JP6190192 B2 JP 6190192B2
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Prior art keywords
silicon oxide
insulating film
semiconductor layer
film
oxide film
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Expired - Fee Related
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JP2013147742A
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Japanese (ja)
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JP2015023054A (ja
JP2015023054A5 (enExample
Inventor
山田　泰弘
泰弘 山田
真人 高徳
真人 高徳
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Priority to JP2013147742A priority Critical patent/JP6190192B2/ja
Priority to US14/320,777 priority patent/US20150021674A1/en
Priority to CN201410315832.2A priority patent/CN104299977B/zh
Publication of JP2015023054A publication Critical patent/JP2015023054A/ja
Publication of JP2015023054A5 publication Critical patent/JP2015023054A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing

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  • Solid State Image Pick-Up Elements (AREA)
  • Thin Film Transistor (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2013147742A 2013-07-16 2013-07-16 放射線撮像装置および放射線撮像表示システム Expired - Fee Related JP6190192B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2013147742A JP6190192B2 (ja) 2013-07-16 2013-07-16 放射線撮像装置および放射線撮像表示システム
US14/320,777 US20150021674A1 (en) 2013-07-16 2014-07-01 Radiation image pickup unit and radiation image pickup display system
CN201410315832.2A CN104299977B (zh) 2013-07-16 2014-07-03 放射线摄像装置和放射线摄像显示系统

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013147742A JP6190192B2 (ja) 2013-07-16 2013-07-16 放射線撮像装置および放射線撮像表示システム

Publications (3)

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JP2015023054A JP2015023054A (ja) 2015-02-02
JP2015023054A5 JP2015023054A5 (enExample) 2016-03-31
JP6190192B2 true JP6190192B2 (ja) 2017-08-30

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JP2013147742A Expired - Fee Related JP6190192B2 (ja) 2013-07-16 2013-07-16 放射線撮像装置および放射線撮像表示システム

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US (1) US20150021674A1 (enExample)
JP (1) JP6190192B2 (enExample)
CN (1) CN104299977B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017143135A (ja) * 2016-02-09 2017-08-17 株式会社ジャパンディスプレイ 薄膜トランジスタ
CN109585566B (zh) * 2018-11-14 2021-05-18 惠科股份有限公司 一种阵列基板、阵列基板的制作方法和显示面板
US20210193049A1 (en) * 2019-12-23 2021-06-24 Apple Inc. Electronic Display with In-Pixel Compensation and Oxide Drive Transistors
CN111415948B (zh) * 2020-03-30 2022-11-08 厦门天马微电子有限公司 阵列基板、显示面板、显示装置及阵列基板的制备方法

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EP0634797B1 (en) * 1993-07-13 1999-09-22 Sony Corporation Thin film semiconductor device for active matrix panel and method of manufacturing the same
US5536932A (en) * 1995-02-10 1996-07-16 Xerox Corporation Polysilicon multiplexer for two-dimensional image sensor arrays
JP2000512084A (ja) * 1997-04-02 2000-09-12 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ センサマトリックスを有するｘ線装置
JP2000196099A (ja) * 1998-12-28 2000-07-14 Matsushita Electronics Industry Corp 薄膜トランジスタおよびその製造方法
JP3774352B2 (ja) * 2000-02-23 2006-05-10 株式会社日立製作所 液晶表示装置
JP2001332741A (ja) * 2000-05-25 2001-11-30 Sony Corp 薄膜トランジスタの製造方法
US7052943B2 (en) * 2001-03-16 2006-05-30 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
TW588570B (en) * 2001-06-18 2004-05-21 Semiconductor Energy Lab Light emitting device and method of fabricating the same
JP2003282561A (ja) * 2002-03-26 2003-10-03 Seiko Epson Corp デバイスの製造方法及びデバイス製造装置
JP3982502B2 (ja) * 2004-01-15 2007-09-26 セイコーエプソン株式会社 描画装置
JP2005209696A (ja) * 2004-01-20 2005-08-04 Seiko Epson Corp 半導体装置の製造方法
JP4237147B2 (ja) * 2004-03-26 2009-03-11 シャープ株式会社 薄膜トランジスタおよびその製造方法、表示装置、酸化膜の改質方法
US8715791B2 (en) * 2005-09-13 2014-05-06 Renesas Electronics Corporation Method for forming porous insulating film and semiconductor device
JP5299190B2 (ja) * 2009-09-18 2013-09-25 株式会社島津製作所 光マトリックスデバイスの製造方法
JP2011091186A (ja) * 2009-10-22 2011-05-06 Mitsubishi Electric Corp 炭化珪素半導体装置の製造方法
JP2012028617A (ja) * 2010-07-26 2012-02-09 Sony Corp 放射線検出装置及び放射線撮像装置
JP2012146805A (ja) * 2011-01-12 2012-08-02 Sony Corp 放射線撮像装置、放射線撮像表示システムおよびトランジスタ
JP5689007B2 (ja) * 2011-03-31 2015-03-25 株式会社アドテックエンジニアリング 薄膜トランジスタの製造装置およびその製造方法
JP5663384B2 (ja) * 2011-04-19 2015-02-04 三菱電機株式会社 絶縁膜の製造方法
JP5978625B2 (ja) * 2011-06-07 2016-08-24 ソニー株式会社 放射線撮像装置、放射線撮像表示システムおよびトランジスタ

Also Published As

Publication number Publication date
JP2015023054A (ja) 2015-02-02
US20150021674A1 (en) 2015-01-22
CN104299977B (zh) 2019-06-07
CN104299977A (zh) 2015-01-21

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