CN104299977B - 放射线摄像装置和放射线摄像显示系统 - Google Patents

放射线摄像装置和放射线摄像显示系统 Download PDF

Info

Publication number
CN104299977B
CN104299977B CN201410315832.2A CN201410315832A CN104299977B CN 104299977 B CN104299977 B CN 104299977B CN 201410315832 A CN201410315832 A CN 201410315832A CN 104299977 B CN104299977 B CN 104299977B
Authority
CN
China
Prior art keywords
radiation
silicon oxide
grid
semiconductor layer
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201410315832.2A
Other languages
English (en)
Chinese (zh)
Other versions
CN104299977A (zh
Inventor
山田泰弘
高德真人
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of CN104299977A publication Critical patent/CN104299977A/zh
Application granted granted Critical
Publication of CN104299977B publication Critical patent/CN104299977B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Thin Film Transistor (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201410315832.2A 2013-07-16 2014-07-03 放射线摄像装置和放射线摄像显示系统 Expired - Fee Related CN104299977B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013147742A JP6190192B2 (ja) 2013-07-16 2013-07-16 放射線撮像装置および放射線撮像表示システム
JP2013-147742 2013-07-16

Publications (2)

Publication Number Publication Date
CN104299977A CN104299977A (zh) 2015-01-21
CN104299977B true CN104299977B (zh) 2019-06-07

Family

ID=52319642

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410315832.2A Expired - Fee Related CN104299977B (zh) 2013-07-16 2014-07-03 放射线摄像装置和放射线摄像显示系统

Country Status (3)

Country Link
US (1) US20150021674A1 (enExample)
JP (1) JP6190192B2 (enExample)
CN (1) CN104299977B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017143135A (ja) * 2016-02-09 2017-08-17 株式会社ジャパンディスプレイ 薄膜トランジスタ
CN109585566B (zh) * 2018-11-14 2021-05-18 惠科股份有限公司 一种阵列基板、阵列基板的制作方法和显示面板
US20210193049A1 (en) * 2019-12-23 2021-06-24 Apple Inc. Electronic Display with In-Pixel Compensation and Oxide Drive Transistors
CN111415948B (zh) * 2020-03-30 2022-11-08 厦门天马微电子有限公司 阵列基板、显示面板、显示装置及阵列基板的制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5536932A (en) * 1995-02-10 1996-07-16 Xerox Corporation Polysilicon multiplexer for two-dimensional image sensor arrays
JP2001332741A (ja) * 2000-05-25 2001-11-30 Sony Corp 薄膜トランジスタの製造方法
CN1642387A (zh) * 2004-01-15 2005-07-20 精工爱普生株式会社 形成图案的方法和装置、器件和电子装置
CN102593164A (zh) * 2011-01-12 2012-07-18 索尼公司 放射线摄像装置、放射线摄像显示系统以及晶体管
CN102820337A (zh) * 2011-06-07 2012-12-12 索尼公司 放射线摄像装置、放射线摄像显示系统和晶体管

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63258063A (ja) * 1987-04-15 1988-10-25 Nec Corp 半導体装置
EP0634797B1 (en) * 1993-07-13 1999-09-22 Sony Corporation Thin film semiconductor device for active matrix panel and method of manufacturing the same
JP2000512084A (ja) * 1997-04-02 2000-09-12 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ センサマトリックスを有するｘ線装置
JP2000196099A (ja) * 1998-12-28 2000-07-14 Matsushita Electronics Industry Corp 薄膜トランジスタおよびその製造方法
JP3774352B2 (ja) * 2000-02-23 2006-05-10 株式会社日立製作所 液晶表示装置
US7052943B2 (en) * 2001-03-16 2006-05-30 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
TW588570B (en) * 2001-06-18 2004-05-21 Semiconductor Energy Lab Light emitting device and method of fabricating the same
JP2003282561A (ja) * 2002-03-26 2003-10-03 Seiko Epson Corp デバイスの製造方法及びデバイス製造装置
JP2005209696A (ja) * 2004-01-20 2005-08-04 Seiko Epson Corp 半導体装置の製造方法
JP4237147B2 (ja) * 2004-03-26 2009-03-11 シャープ株式会社 薄膜トランジスタおよびその製造方法、表示装置、酸化膜の改質方法
US8715791B2 (en) * 2005-09-13 2014-05-06 Renesas Electronics Corporation Method for forming porous insulating film and semiconductor device
JP5299190B2 (ja) * 2009-09-18 2013-09-25 株式会社島津製作所 光マトリックスデバイスの製造方法
JP2011091186A (ja) * 2009-10-22 2011-05-06 Mitsubishi Electric Corp 炭化珪素半導体装置の製造方法
JP2012028617A (ja) * 2010-07-26 2012-02-09 Sony Corp 放射線検出装置及び放射線撮像装置
JP5689007B2 (ja) * 2011-03-31 2015-03-25 株式会社アドテックエンジニアリング 薄膜トランジスタの製造装置およびその製造方法
JP5663384B2 (ja) * 2011-04-19 2015-02-04 三菱電機株式会社 絶縁膜の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5536932A (en) * 1995-02-10 1996-07-16 Xerox Corporation Polysilicon multiplexer for two-dimensional image sensor arrays
JP2001332741A (ja) * 2000-05-25 2001-11-30 Sony Corp 薄膜トランジスタの製造方法
CN1642387A (zh) * 2004-01-15 2005-07-20 精工爱普生株式会社 形成图案的方法和装置、器件和电子装置
CN102593164A (zh) * 2011-01-12 2012-07-18 索尼公司 放射线摄像装置、放射线摄像显示系统以及晶体管
CN102820337A (zh) * 2011-06-07 2012-12-12 索尼公司 放射线摄像装置、放射线摄像显示系统和晶体管

Also Published As

Publication number Publication date
JP2015023054A (ja) 2015-02-02
US20150021674A1 (en) 2015-01-22
CN104299977A (zh) 2015-01-21
JP6190192B2 (ja) 2017-08-30

Similar Documents

Publication Publication Date Title
US8901562B2 (en) Radiation imaging device, radiation imaging display system, and transistor
CN103456753B (zh) 摄像装置和摄像显示系统
US9859315B2 (en) Radiation image-pickup device and radiation image-pickup display system
TWI640087B (zh) 影像拾取單元及影像拾取顯示系統
US20160013243A1 (en) Photosensor arrays for detection of radiation and process for the preparation thereof
CN104079847B (zh) 摄像装置和图像拍摄显示系统
US11330213B2 (en) Imaging device and electronic device
TWI643323B (zh) Radiation camera and radiographic display system
CN104299977B (zh) 放射线摄像装置和放射线摄像显示系统
CN104078474A (zh) 摄像装置和摄像显示系统
CN104425530B (zh) 放射线摄像装置和放射线摄像显示系统

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20160912

Address after: Kanagawa

Applicant after: SONY semiconductor solutions

Address before: Tokyo, Japan

Applicant before: Sony Corp

GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20190607

Termination date: 20200703

CF01 Termination of patent right due to non-payment of annual fee