JP6174499B2 - 半導体発光素子 - Google Patents
半導体発光素子 Download PDFInfo
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- JP6174499B2 JP6174499B2 JP2014012838A JP2014012838A JP6174499B2 JP 6174499 B2 JP6174499 B2 JP 6174499B2 JP 2014012838 A JP2014012838 A JP 2014012838A JP 2014012838 A JP2014012838 A JP 2014012838A JP 6174499 B2 JP6174499 B2 JP 6174499B2
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- layer
- quantum
- quantum well
- quantum dots
- light emitting
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- 239000004065 semiconductor Substances 0.000 title claims description 23
- 239000002096 quantum dot Substances 0.000 claims description 141
- 230000004888 barrier function Effects 0.000 claims description 63
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 25
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 23
- 238000005253 cladding Methods 0.000 claims description 20
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 10
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 3
- 229910021478 group 5 element Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 230000000052 comparative effect Effects 0.000 description 31
- 238000012986 modification Methods 0.000 description 17
- 230000004048 modification Effects 0.000 description 17
- 239000000463 material Substances 0.000 description 12
- 238000005259 measurement Methods 0.000 description 12
- 238000009736 wetting Methods 0.000 description 12
- 238000005401 electroluminescence Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000000295 emission spectrum Methods 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000012014 optical coherence tomography Methods 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- VLCQZHSMCYCDJL-UHFFFAOYSA-N tribenuron methyl Chemical compound COC(=O)C1=CC=CC=C1S(=O)(=O)NC(=O)N(C)C1=NC(C)=NC(OC)=N1 VLCQZHSMCYCDJL-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Description
12 下部クラッド層
14 上部クラッド層
16 p電極
18 n電極
20、40、50、60 活性層部
22a、42a、52a、62a 第1障壁層
22b、42b、52b、62b 第2障壁層
22c、42c、52c、62c 第3障壁層
52d、62d 第4障壁層
62e 第5障壁層
62f 第6障壁層
24、44 量子井戸層
54a、64a 第1量子井戸層
54b、64b 第2量子井戸層
28、48、58 量子ドット
27、47、57 濡れ層
68a〜68c 第1〜第3量子ドット
26、46、56 InGaAs層
66a〜66c 第1〜第3InGaAs層
67a〜67c 第1〜第3濡れ層
30 量子ドット下の領域
32 近接する量子ドットの中央部下の領域
Claims (9)
- 基板上に設けられた下部クラッド層と、
前記下部クラッド層上に設けられ、量子井戸層と、前記量子井戸層との間に障壁層を挟んで配置された複数の量子ドットと、を含む活性層部と、
前記活性層部上に設けられた上部クラッド層と、を備え、
前記量子井戸層と前記複数の量子ドットとの間隔は、前記複数の量子ドットそれぞれの中心間の間隔の平均値よりも小さいことを特徴とする半導体発光素子。 - 前記量子井戸層と前記複数の量子ドットとの間隔は、前記複数の量子ドットそれぞれの中心間の間隔の平均値の1/3以上且つ2/3以下であることを特徴とする請求項1記載の半導体発光素子。
- 前記量子井戸層と前記複数の量子ドットとの間の前記障壁層の厚さは、前記量子井戸層と前記複数の量子ドットとの間でトンネル電流が流れない厚さであることを特徴とする請求項1または2記載の半導体発光素子。
- 前記量子井戸層は、前記基板の上面に平行な方向において、前記複数の量子ドットによる歪み場の影響によって、バンドギャップエネルギーが変調されていることを特徴とする請求項1から3のいずれか一項記載の半導体発光素子。
- 前記量子井戸層及び前記量子ドットはIII−V族化合物半導体層であり、前記量子井戸層及び前記量子ドットの少なくとも一方はIII族元素としてInを含むことを特徴とする請求項1から4のいずれか一項記載の半導体発光素子。
- 前記量子井戸層はInGaAs層で、前記量子ドットはInAsであることを特徴とする請求項5記載の半導体発光素子。
- 前記量子井戸層はGaAs層で、前記量子ドットはAlInAsであることを特徴とする請求項5記載の半導体発光素子。
- 前記量子井戸層及び前記量子ドットの少なくとも一方はV族元素として窒素を含むことを特徴とする請求項5記載の半導体発光素子。
- 前記活性層部は複数の前記量子井戸層を含み、
前記複数の量子井戸層の厚さは、互いに異なることを特徴とする請求項1から8のいずれか一項記載の半導体発光素子。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014012838A JP6174499B2 (ja) | 2014-01-27 | 2014-01-27 | 半導体発光素子 |
EP15740889.9A EP3101697B1 (en) | 2014-01-27 | 2015-01-07 | Semiconductor light-emitting element |
PCT/JP2015/050266 WO2015111432A1 (ja) | 2014-01-27 | 2015-01-07 | 半導体発光素子 |
US15/110,991 US9865771B2 (en) | 2014-01-27 | 2015-01-07 | Semiconductor light-emitting element |
CN201580005722.9A CN105934832B (zh) | 2014-01-27 | 2015-01-07 | 半导体发光元件 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014012838A JP6174499B2 (ja) | 2014-01-27 | 2014-01-27 | 半導体発光素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015141951A JP2015141951A (ja) | 2015-08-03 |
JP6174499B2 true JP6174499B2 (ja) | 2017-08-02 |
Family
ID=53681240
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014012838A Expired - Fee Related JP6174499B2 (ja) | 2014-01-27 | 2014-01-27 | 半導体発光素子 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9865771B2 (ja) |
EP (1) | EP3101697B1 (ja) |
JP (1) | JP6174499B2 (ja) |
CN (1) | CN105934832B (ja) |
WO (1) | WO2015111432A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107394017B (zh) * | 2017-07-31 | 2019-02-05 | 天津三安光电有限公司 | 发光二极管及其制备方法 |
JP7543862B2 (ja) * | 2020-11-13 | 2024-09-03 | 株式会社デンソー | 半導体レーザ装置 |
CN113193089B (zh) * | 2021-04-30 | 2022-06-24 | 湖南汇思光电科技有限公司 | 基于掺杂(Si)GeSn有源区的CMOS技术兼容硅基光源器件及其制备方法 |
US20220376477A1 (en) * | 2021-05-21 | 2022-11-24 | The Board Of Trustees Of The University Of Illinois | Visible Light-Emitting Device and Laser with Improved Tolerance to Crystalline Defects and Damage |
CN113471341A (zh) * | 2021-05-26 | 2021-10-01 | 厦门大学 | 一种基于红光AlInGaAs量子点的Micro-LED结构及其制备方法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3672678B2 (ja) * | 1996-04-05 | 2005-07-20 | 富士通株式会社 | 量子半導体装置およびその製造方法 |
US6816525B2 (en) * | 2000-09-22 | 2004-11-09 | Andreas Stintz | Quantum dot lasers |
WO2003012834A1 (en) * | 2001-07-31 | 2003-02-13 | The Board Of Trustees Of The University Of Illinois | Coupled quantum dot and quantum well semiconductor device and method of making the same |
TWI235504B (en) * | 2003-03-19 | 2005-07-01 | Chung Shan Inst Of Science | The structure and fabrication method of infrared quantum dot light emitting diode |
JP4526252B2 (ja) | 2003-08-26 | 2010-08-18 | 富士通株式会社 | 光半導体装置及びその製造方法 |
KR100631980B1 (ko) * | 2005-04-06 | 2006-10-11 | 삼성전기주식회사 | 질화물 반도체 소자 |
CN101038946A (zh) * | 2006-03-16 | 2007-09-19 | 中国科学院半导体研究所 | 半导体量子点/量子阱导带内跃迁材料结构 |
US8629425B2 (en) * | 2006-09-08 | 2014-01-14 | Agency For Science, Technology And Research | Tunable wavelength light emitting diode |
JP4996186B2 (ja) * | 2006-09-25 | 2012-08-08 | 株式会社東芝 | 半導体装置および化合物半導体基板とその製造方法 |
JP4861112B2 (ja) * | 2006-09-27 | 2012-01-25 | 富士通株式会社 | 光半導体装置及びその製造方法 |
JP2008235442A (ja) * | 2007-03-19 | 2008-10-02 | Fujitsu Ltd | 半導体発光素子及びその製造方法 |
WO2009048425A1 (en) * | 2007-10-12 | 2009-04-16 | Agency For Science, Technology And Research | Fabrication of phosphor free red and white nitride-based leds |
JP4538516B2 (ja) | 2008-08-08 | 2010-09-08 | 防衛省技術研究本部長 | 光半導体装置 |
JP5366328B2 (ja) * | 2010-11-18 | 2013-12-11 | 防衛省技術研究本部長 | 量子ドット型赤外線検知器及び赤外線イメージセンサ |
JP5704987B2 (ja) * | 2011-03-25 | 2015-04-22 | 富士フイルム株式会社 | 波長変換素子および光電変換装置 |
EP2523218A2 (en) * | 2011-05-09 | 2012-11-14 | Sharp Kabushiki Kaisha | Solar Cell |
GB2492771A (en) * | 2011-07-11 | 2013-01-16 | Univ Sheffield | broadband optical device structure and method of fabrication thereof |
CN202534677U (zh) * | 2012-04-13 | 2012-11-14 | 苏辉 | 基于量子点和量子阱材料混合结构的超辐射发光管 |
JP2013239690A (ja) * | 2012-04-16 | 2013-11-28 | Sharp Corp | 超格子構造、前記超格子構造を備えた半導体装置および半導体発光装置、ならびに前記超格子構造の製造方法 |
EP3017515B1 (en) * | 2013-07-03 | 2021-01-06 | Inphenix, Inc. | Wavelength-tunable vertical cavity surface emitting laser for swept source optical coherence tomography system |
KR20160069393A (ko) * | 2014-12-08 | 2016-06-16 | 엘지전자 주식회사 | 광 변환 복합재의 제조방법, 광 변환 복합재, 이를 포함하는 광 변환 필름, 백라이트 유닛 및 표시장치 |
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2014
- 2014-01-27 JP JP2014012838A patent/JP6174499B2/ja not_active Expired - Fee Related
-
2015
- 2015-01-07 WO PCT/JP2015/050266 patent/WO2015111432A1/ja active Application Filing
- 2015-01-07 EP EP15740889.9A patent/EP3101697B1/en active Active
- 2015-01-07 US US15/110,991 patent/US9865771B2/en active Active
- 2015-01-07 CN CN201580005722.9A patent/CN105934832B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN105934832A (zh) | 2016-09-07 |
JP2015141951A (ja) | 2015-08-03 |
WO2015111432A1 (ja) | 2015-07-30 |
US9865771B2 (en) | 2018-01-09 |
US20160336480A1 (en) | 2016-11-17 |
CN105934832B (zh) | 2018-12-28 |
EP3101697B1 (en) | 2022-03-23 |
EP3101697A1 (en) | 2016-12-07 |
EP3101697A4 (en) | 2017-08-16 |
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