JP6163544B2 - 有機発光素子およびその製造方法 - Google Patents
有機発光素子およびその製造方法 Download PDFInfo
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- JP6163544B2 JP6163544B2 JP2015514925A JP2015514925A JP6163544B2 JP 6163544 B2 JP6163544 B2 JP 6163544B2 JP 2015514925 A JP2015514925 A JP 2015514925A JP 2015514925 A JP2015514925 A JP 2015514925A JP 6163544 B2 JP6163544 B2 JP 6163544B2
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- 238000004519 manufacturing process Methods 0.000 title description 6
- 239000010410 layer Substances 0.000 claims description 127
- 229910052751 metal Inorganic materials 0.000 claims description 53
- 239000002184 metal Substances 0.000 claims description 53
- 239000000758 substrate Substances 0.000 claims description 30
- 239000012044 organic layer Substances 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 17
- 239000000126 substance Substances 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- 238000000605 extraction Methods 0.000 claims description 10
- 239000011368 organic material Substances 0.000 claims description 10
- 229910045601 alloy Inorganic materials 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 9
- 229910052791 calcium Inorganic materials 0.000 claims description 9
- 229910052749 magnesium Inorganic materials 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 9
- -1 polyethylene terephthalate Polymers 0.000 claims description 8
- 125000003118 aryl group Chemical group 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 claims description 5
- 239000011112 polyethylene naphthalate Substances 0.000 claims description 5
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 5
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 5
- 125000000217 alkyl group Chemical group 0.000 claims description 4
- 229910052741 iridium Inorganic materials 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- 239000004417 polycarbonate Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 125000004642 (C1-C12) alkoxy group Chemical group 0.000 claims description 2
- 125000006710 (C2-C12) alkenyl group Chemical group 0.000 claims description 2
- 239000004642 Polyimide Substances 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 150000001408 amides Chemical class 0.000 claims description 2
- 150000003974 aralkylamines Chemical class 0.000 claims description 2
- 150000002148 esters Chemical class 0.000 claims description 2
- 125000005843 halogen group Chemical group 0.000 claims description 2
- 125000000623 heterocyclic group Chemical group 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 150000002825 nitriles Chemical class 0.000 claims description 2
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 2
- 229920000515 polycarbonate Polymers 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229940124530 sulfonamide Drugs 0.000 claims description 2
- 150000003456 sulfonamides Chemical class 0.000 claims description 2
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 claims description 2
- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 claims description 2
- 150000003462 sulfoxides Chemical class 0.000 claims description 2
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 claims description 2
- 239000000155 melt Substances 0.000 claims 1
- 238000002347 injection Methods 0.000 description 10
- 239000007924 injection Substances 0.000 description 10
- 230000007547 defect Effects 0.000 description 8
- 239000011575 calcium Substances 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 239000011777 magnesium Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000010944 silver (metal) Substances 0.000 description 5
- 239000011651 chromium Substances 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 238000005286 illumination Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- QENGPZGAWFQWCZ-UHFFFAOYSA-N 3-Methylthiophene Chemical compound CC=1C=CSC=1 QENGPZGAWFQWCZ-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical compound C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- UEEXRMUCXBPYOV-UHFFFAOYSA-N iridium;2-phenylpyridine Chemical compound [Ir].C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1 UEEXRMUCXBPYOV-UHFFFAOYSA-N 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- BCMCBBGGLRIHSE-UHFFFAOYSA-N 1,3-benzoxazole Chemical compound C1=CC=C2OC=NC2=C1 BCMCBBGGLRIHSE-UHFFFAOYSA-N 0.000 description 1
- 239000005725 8-Hydroxyquinoline Substances 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- UFVXQDWNSAGPHN-UHFFFAOYSA-K bis[(2-methylquinolin-8-yl)oxy]-(4-phenylphenoxy)alumane Chemical compound [Al+3].C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC([O-])=CC=C1C1=CC=CC=C1 UFVXQDWNSAGPHN-UHFFFAOYSA-K 0.000 description 1
- 125000000609 carbazolyl group Chemical class C1(=CC=CC=2C3=CC=CC=C3NC12)* 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- SIOXPEMLGUPBBT-UHFFFAOYSA-M picolinate Chemical compound [O-]C(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-M 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 150000003413 spiro compounds Chemical class 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80522—Cathodes combined with auxiliary electrodes
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/62—Protection against overvoltage, e.g. fuses, shunts
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
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- H10K59/877—Arrangements for extracting light from the devices comprising scattering means
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Description
本発明は有機発光素子およびその製造方法に関する。
基板、
前記基板上に備えられた第1電極、
前記第1電極上に備えられた有機物層、
前記有機物層上に備えられ、互いに離隔した2以上の金属層を含む第2電極パターン、および
前記第2電極パターンの上部面と前記互いに離隔した金属層間の間の領域の全体に備えられたヒューズ層(fuse layer)
を含む有機発光素子を提供する。
基板、
前記基板上に備えられた第1電極、
前記第1電極上に備えられた有機物層、および
前記有機物層上に備えられた第2電極を含み、
前記第2電極の少なくとも一部領域の厚さは残りの領域の厚さと互いに異なることを特徴とする有機発光素子を提供する。
基板、
前記基板上に備えられた第1電極、
前記第1電極上に備えられた有機物層、
前記有機物層上に備えられ、下記化学式1で表される化合物を含む第2電極パターン、および
前記第2電極パターンの上部面と前記第2電極パターン間の間の領域の全体に備えられたヒューズ層(fuse layer)を含む有機発光素子を提供する。
R1〜R6は互いに同一であるかまたは異なり、各々独立して水素、ハロゲン原子、ニトリル(−CN)、ニトロ(−NO2)、スルホニル(−SO2R)、スルホキシド(−SOR)、スルホンアミド(−SO2NR)、スルホネート(−SO3R)、トリフルオロメチル(−CF3)、エステル(−COOR)、アミド(−CONHRまたは−CONRR’)、置換もしくは非置換の直鎖もしくは分枝鎖のC1−C12アルコキシ、置換もしくは非置換の直鎖もしくは分枝鎖のC1−C12アルキル、置換もしくは非置換の直鎖もしくは分枝鎖のC2−C12アルケニル、置換もしくは非置換の芳香族もしくは非芳香族の複素環、置換もしくは非置換のアリール、置換もしくは非置換のモノ−もしくはジ−アリールアミン、または置換もしくは非置換のアラルキルアミンであり、前記RおよびR’は各々独立して置換もしくは非置換のC1−C60アルキル、置換もしくは非置換のアリール、または置換もしくは非置換の5−7員複素環である。
1)基板上に第1電極を形成するステップ、
2)前記第1電極上に備えられた有機物層を形成するステップ、
3)前記有機物層上に互いに離隔した2以上の金属層を形成するステップ、および
4)前記金属層の上部面と前記互いに離隔した金属層間の間の領域の全体にヒューズ層(fuse layer)を形成するステップ
を含む有機発光素子の製造方法を提供する。
一般的に、有機発光素子は、広い面積を有する2つの電極が互いに対向しており、その間に電流によって光を発光する有機物層が形成されている構造を有する。前記電極の枠部分から電流が印加され、電極の中心部側へ流れて有機物を通過し、対向している電極に抜け出るようになり、この時、電極の枠部分から中心部へ電流が流れ、電極の抵抗に比例するように電圧下降が発生する。このような電極の抵抗によって電圧下降が発生しただけエネルギーを消耗するようになり、有機発光素子のエネルギー効率を低下させることになる。
20 ・・・有機物層
30 ・・・第2電極パターン
40 ・・・ヒューズ層
Claims (22)
- 基板、
前記基板上に備えられた第1電極、
前記第1電極上に備えられた有機物層、
前記有機物層上に備えられ、互いに離隔した2以上の金属層を含む第2電極パターン、および
前記第2電極パターンの上部面を覆うとともに、前記互いに離隔した金属層の間の領域の全体に入り込むヒューズ層(fuse layer)
を含み、前記ヒューズ層は過電流により融解して断絶する、有機発光素子。 - 前記金属層は、Al、Ag、Ca、Mg、Au、Mo、Ir、Cr、Ti、Pdおよびこれらの合金からなる群から選択される1種以上を含むことを特徴とする、請求項1に記載の有機発光素子。
- 前記ヒューズ層は、前記金属層より融点が低い金属を含むことを特徴とする、請求項1に記載の有機発光素子。
- 前記金属層およびヒューズ層は、同一の材料を含むことを特徴とする、請求項1に記載の有機発光素子。
- 前記第2電極パターンの上部面の上での前記ヒューズ層の厚さは、金属層の厚さより薄いことを特徴とする、請求項4に記載の有機発光素子。
- 前記金属層と前記第2電極パターンの上部面の上での前記ヒューズ層の厚さの差は、10〜100nmであることを特徴とする、請求項1に記載の有機発光素子。
- 前記ヒューズ層は、Al、Ag、Ca、Mgおよびインジウムからなる群から選択される1種以上を含むことを特徴とする、請求項1に記載の有機発光素子。
- 前記金属層はAgを含み、前記ヒューズ層はCaを含むことを特徴とする、請求項1に記載の有機発光素子。
- 前記ヒューズ層の少なくとも一部は、前記有機物層と接することを特徴とする、請求項1に記載の有機発光素子。
- 前記第2電極パターンは下記化学式1で表される化合物を含む請求項1に記載の有機発光素子:
前記化学式1において、
R1〜R6は互いに同一であるかまたは異なり、各々独立して水素、ハロゲン原子、ニトリル(−CN)、ニトロ(−NO2)、スルホニル(−SO2R)、スルホキシド(−SOR)、スルホンアミド(−SO2NR)、スルホネート(−SO3R)、トリフルオロメチル(−CF3)、エステル(−COOR)、アミド(−CONHRまたは−CONRR’)、置換もしくは非置換の直鎖もしくは分枝鎖のC1−C12アルコキシ、置換もしくは非置換の直鎖もしくは分枝鎖のC1−C12アルキル、置換もしくは非置換の直鎖もしくは分枝鎖のC2−C12アルケニル、置換もしくは非置換の芳香族もしくは非芳香族の複素環、置換もしくは非置換のアリール、置換もしくは非置換のモノ−もしくはジ−アリールアミン、または置換もしくは非置換のアラルキルアミンであり、前記RおよびR’は各々独立して置換もしくは非置換のC1−C60アルキル、置換もしくは非置換のアリール、または置換もしくは非置換の5−7員複素環である。 - 前記基板は、ガラス、SiO2、シリコンウェハー、PET(polyethylene terephthalate)、PC(Polycarbonate)、PI(polyimide)、PEN(polyethylene naphthalate)およびCOP(cycloolefin polymer)からなる群から選択されることを特徴とする、請求項1または10に記載の有機発光素子。
- 前記第1電極は、ITO(indium tin oxide)、IZO、ZnO、およびSnO2からなる群から選択される1種以上を含むことを特徴とする、請求項1または10に記載の有機発光素子。
- 前記第1電極上に補助電極をさらに含むことを特徴とする、請求項1または10に記載の有機発光素子。
- 前記補助電極は、Cr、Mo、Al、Cuおよびこれらの合金からなる群から選択される1種以上を含むことを特徴とする、請求項13に記載の有機発光素子。
- 前記基板と第1電極との間に内部光抽出層をさらに含むか、前記基板において第1電極が備えられた面の反対面に外部光抽出層をさらに含むことを特徴とする、請求項1または10に記載の有機発光素子。
- 前記有機発光素子は、フレキシブル(flexible)有機発光素子であることを特徴とする、請求項1または10に記載の有機発光素子。
- 請求項1または10に記載の有機発光素子を含むディスプレイ装置。
- 請求項1または10に記載の有機発光素子を含む照明装置。
- 1)基板上に第1電極を形成するステップ、
2)前記第1電極上に備えられた有機物層を形成するステップ、
3)前記有機物層上に互いに離隔した2以上の金属層を形成するステップ、および
4)前記金属層の上部面を覆うように、かつ前記互いに離隔した金属層の間の領域の全体に入り込むようにヒューズ層(fuse layer)を形成するステップ
を含み、前記ヒューズ層は過電流により融解して断絶する、有機発光素子の製造方法。 - 前記ヒューズ層は、前記金属層より融点が低い金属を含むことを特徴とする、請求項19に記載の有機発光素子の製造方法。
- 前記金属層およびヒューズ層は、同一の材料を含むことを特徴とする、請求項19に記載の有機発光素子の製造方法。
- 前記ヒューズ層は、Al、Ag、Ca、Mgおよびインジウムからなる群から選択される1種以上を含むことを特徴とする、請求項19に記載の有機発光素子の製造方法。
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