JP6163398B2 - 撮像素子、製造装置、製造方法 - Google Patents

撮像素子、製造装置、製造方法 Download PDF

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Publication number
JP6163398B2
JP6163398B2 JP2013193376A JP2013193376A JP6163398B2 JP 6163398 B2 JP6163398 B2 JP 6163398B2 JP 2013193376 A JP2013193376 A JP 2013193376A JP 2013193376 A JP2013193376 A JP 2013193376A JP 6163398 B2 JP6163398 B2 JP 6163398B2
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Japan
Prior art keywords
shape
photoelectric conversion
correction unit
conversion unit
angle
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Expired - Fee Related
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JP2013193376A
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English (en)
Japanese (ja)
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JP2015061193A (ja
JP2015061193A5 (enExample
Inventor
戸田 淳
淳 戸田
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Priority to JP2013193376A priority Critical patent/JP6163398B2/ja
Priority to PCT/JP2014/004647 priority patent/WO2015040825A2/en
Priority to KR1020167006374A priority patent/KR102310376B1/ko
Priority to US14/911,590 priority patent/US10401619B2/en
Priority to CN201480050326.3A priority patent/CN105612619B/zh
Publication of JP2015061193A publication Critical patent/JP2015061193A/ja
Publication of JP2015061193A5 publication Critical patent/JP2015061193A5/ja
Application granted granted Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/61—Noise processing, e.g. detecting, correcting, reducing or removing noise the noise originating only from the lens unit, e.g. flare, shading, vignetting or "cos4"
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/0025—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/18—Optical objectives specially designed for the purposes specified below with lenses having one or more non-spherical faces, e.g. for reducing geometrical aberration
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/004—Optical devices or arrangements for the control of light using movable or deformable optical elements based on a displacement or a deformation of a fluid
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/02—Simple or compound lenses with non-spherical faces
    • G02B3/04—Simple or compound lenses with non-spherical faces with continuous faces that are rotationally symmetrical but deviate from a true sphere, e.g. so called "aspheric" lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/12—Fluid-filled or evacuated lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/12—Fluid-filled or evacuated lenses
    • G02B3/14—Fluid-filled or evacuated lenses of variable focal length
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/55—Optical parts specially adapted for electronic image sensors; Mounting thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B2003/0093—Simple or compound lenses characterised by the shape
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N2209/00—Details of colour television systems
    • H04N2209/04—Picture signal generators
    • H04N2209/041—Picture signal generators using solid-state devices
    • H04N2209/042—Picture signal generators using solid-state devices having a single pick-up sensor
    • H04N2209/047—Picture signal generators using solid-state devices having a single pick-up sensor using multispectral pick-up elements

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Lenses (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Studio Devices (AREA)
JP2013193376A 2013-09-18 2013-09-18 撮像素子、製造装置、製造方法 Expired - Fee Related JP6163398B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2013193376A JP6163398B2 (ja) 2013-09-18 2013-09-18 撮像素子、製造装置、製造方法
PCT/JP2014/004647 WO2015040825A2 (en) 2013-09-18 2014-09-10 Imaging device, manufacturing apparatus, manufacturing method, and electronic apparatus
KR1020167006374A KR102310376B1 (ko) 2013-09-18 2014-09-10 촬상 장치, 제조 장치, 제조 방법, 및 전자 기기
US14/911,590 US10401619B2 (en) 2013-09-18 2014-09-10 Imaging device, manufacturing apparatus, manufacturing method, and electronic apparatus
CN201480050326.3A CN105612619B (zh) 2013-09-18 2014-09-10 成像器件、制造装置、制造方法以及电子装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013193376A JP6163398B2 (ja) 2013-09-18 2013-09-18 撮像素子、製造装置、製造方法

Publications (3)

Publication Number Publication Date
JP2015061193A JP2015061193A (ja) 2015-03-30
JP2015061193A5 JP2015061193A5 (enExample) 2016-03-10
JP6163398B2 true JP6163398B2 (ja) 2017-07-12

Family

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JP2013193376A Expired - Fee Related JP6163398B2 (ja) 2013-09-18 2013-09-18 撮像素子、製造装置、製造方法

Country Status (5)

Country Link
US (1) US10401619B2 (enExample)
JP (1) JP6163398B2 (enExample)
KR (1) KR102310376B1 (enExample)
CN (1) CN105612619B (enExample)
WO (1) WO2015040825A2 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6918409B2 (ja) * 2017-01-26 2021-08-11 ソニーセミコンダクタソリューションズ株式会社 カメラモジュールおよびその製造方法、並びに電子機器
JP2018200980A (ja) 2017-05-29 2018-12-20 ソニーセミコンダクタソリューションズ株式会社 撮像装置および固体撮像素子、並びに電子機器
JP2018200423A (ja) 2017-05-29 2018-12-20 ソニーセミコンダクタソリューションズ株式会社 撮像装置、および電子機器
JP7146376B2 (ja) 2017-08-31 2022-10-04 ソニーセミコンダクタソリューションズ株式会社 撮像装置、および電子機器
KR102725516B1 (ko) 2018-06-08 2024-11-01 소니 세미컨덕터 솔루션즈 가부시키가이샤 촬상 장치
JP2019213151A (ja) 2018-06-08 2019-12-12 ソニーセミコンダクタソリューションズ株式会社 撮像装置
WO2019235247A1 (ja) 2018-06-08 2019-12-12 ソニーセミコンダクタソリューションズ株式会社 撮像装置
KR102723678B1 (ko) 2018-06-08 2024-10-29 소니 세미컨덕터 솔루션즈 가부시키가이샤 촬상 장치
WO2019235249A1 (ja) 2018-06-08 2019-12-12 ソニーセミコンダクタソリューションズ株式会社 撮像装置
JP2020068302A (ja) 2018-10-24 2020-04-30 ソニーセミコンダクタソリューションズ株式会社 撮像装置
WO2020246293A1 (ja) 2019-06-06 2020-12-10 ソニーセミコンダクタソリューションズ株式会社 撮像装置
CN110365886A (zh) * 2019-08-01 2019-10-22 珠海格力电器股份有限公司 一种光学防抖摄像头模组
EP4060739B1 (en) 2019-11-13 2025-09-03 Sony Semiconductor Solutions Corporation Imaging device and electronic instrument
KR102813299B1 (ko) 2019-12-24 2025-05-28 삼성전자주식회사 이미지 장치 및 이미지 센싱 방법
WO2021166672A1 (ja) * 2020-02-20 2021-08-26 ソニーセミコンダクタソリューションズ株式会社 撮像装置、電子機器

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1062609A (ja) * 1996-08-22 1998-03-06 Nikon Corp マイクロレンズ及び該レンズを用いた撮像装置
JPH10229180A (ja) * 1997-02-14 1998-08-25 Sony Corp 固体撮像素子
JP4270689B2 (ja) * 1999-11-24 2009-06-03 本田技研工業株式会社 太陽光発電装置
US6702483B2 (en) * 2000-02-17 2004-03-09 Canon Kabushiki Kaisha Optical element
KR100477784B1 (ko) * 2000-08-31 2005-03-22 매그나칩 반도체 유한회사 트렌치 내부의 공기로 이루어지는 집광층을 구비하는이미지 센서 및 그 제조 방법
JP4776181B2 (ja) 2004-06-02 2011-09-21 三菱電機株式会社 照明制御装置、照明装置、照明制御システム及び照明システム
JP4599497B2 (ja) 2005-03-18 2010-12-15 ヤンマー株式会社 根菜作物収穫機
JP4538353B2 (ja) 2005-03-25 2010-09-08 富士フイルム株式会社 光電変換膜積層型カラー固体撮像素子
JP4456040B2 (ja) 2005-06-17 2010-04-28 パナソニック株式会社 固体撮像素子
JP2007184322A (ja) * 2006-01-04 2007-07-19 Sony Corp 固体撮像装置およびその製造方法、並びにカメラ
JP2007189021A (ja) * 2006-01-12 2007-07-26 Fujifilm Corp 固体撮像素子及び固体撮像素子の製造方法
TW200913238A (en) 2007-06-04 2009-03-16 Sony Corp Optical member, solid state imaging apparatus, and manufacturing method
US7729055B2 (en) * 2008-03-20 2010-06-01 Aptina Imaging Corporation Method and apparatus providing concave microlenses for semiconductor imaging devices
JP5671789B2 (ja) * 2009-08-10 2015-02-18 ソニー株式会社 固体撮像装置とその製造方法および撮像装置
US20120200686A1 (en) * 2009-10-30 2012-08-09 Zaiguang Yu Intraoral camera with liquid lens
US8878123B2 (en) * 2011-03-11 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Lens sheet and photoelectric conversion module
DE112013005773B4 (de) * 2012-12-03 2018-03-01 Mitsubishi Electric Corporation Halbleiterlaservorrichtung

Also Published As

Publication number Publication date
KR102310376B1 (ko) 2021-10-08
WO2015040825A3 (en) 2015-05-21
JP2015061193A (ja) 2015-03-30
US10401619B2 (en) 2019-09-03
CN105612619B (zh) 2019-09-13
CN105612619A (zh) 2016-05-25
KR20160058779A (ko) 2016-05-25
WO2015040825A2 (en) 2015-03-26
US20160202475A1 (en) 2016-07-14

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