JP6135617B2 - Substrate processing apparatus, cleaning jig, particle removal method of substrate processing apparatus, and storage medium - Google Patents

Description

  The present invention relates to a technical field for removing particles in a substrate processing apparatus.

  In recent years, semiconductor patterns have been miniaturized in semiconductor devices. For this reason, the allowable values of the particle size and the number of particles in the atmosphere on which the substrate such as a semiconductor wafer is placed are strict. In recent years, fine particle diameters can be detected with the progress of particle inspection machines, and for example, removal of particles of about 50 nm is required. Therefore, in the semiconductor manufacturing apparatus, a cleaning operation is performed in order to remove and suppress particles adhering to members in the apparatus and particles contained in the atmosphere when the apparatus is started up or after the maintenance is completed.

  In this cleaning operation, first, the semiconductor manufacturing apparatus is opened, and an engineer wipes the interior to perform the wiping operation. After the visual check by the customer, the semiconductor manufacturing equipment is closed, and the drive mechanism inside the equipment is driven to wind up the internal particles, while repeatedly carrying clean bare wafers inside the equipment, so that the soaring particles are transferred to the wafer. An aging conveyance operation for collecting and collecting is performed. Due to this aging operation, particles that have not been collected by the wiping operation are captured and removed by the downflow formed in the substrate processing apparatus, and even fine particles and driving units that cannot be removed by the wiping operation The particles that have entered the air rise into the atmosphere and are collected by the bare wafer. Thereafter, the bare wafer for inspection is carried, particle check is performed, and after the cleanliness is sufficiently increased, the processing of the product wafer is started. However, such a cleaning operation has a problem that it takes a lot of man-hours and takes a long time. As a result, it is a cause of lowering the operating rate of the semiconductor manufacturing apparatus.

In Patent Document 1, a wafer having an uneven surface is transferred during an aging operation, and the wafer is moved so as to rub the surface of the mounting table in a mounting unit on which the wafer is mounted in the substrate transfer apparatus. A technique for scraping off foreign matter on the surface of the mounting table by unevenness is described. However, particles that have risen in the atmosphere in the substrate processing apparatus cannot be efficiently collected, and the problem of the present invention is not solved.
Patent Document 2 describes a cleaning member provided with a cleaning layer made of a heat-resistant resin. However, this is a technique for preventing a reduction in operating rate by avoiding secondary contamination by the cleaning member. It does not solve the problem.

JP 2009-141384 A JP 2007-67781 A

  The present invention has been made under such circumstances, and an object of the present invention is to provide a technique for efficiently removing particles in a substrate processing apparatus and shortening a cleaning operation time.

The substrate processing apparatus of the present invention includes a plurality of modules including a processing module in which a substrate for manufacturing a semiconductor is mounted on each mounting portion and performs processing on the substrate,
A substrate transfer mechanism for holding the substrate by a holding member and transferring between the plurality of modules;
A plate-like body configured to be held by the holding member, a suction hole formed in the plate-like body for sucking an atmosphere, a connection port provided in the plate-like body, and the suction hole A flow path for causing the airflow sucked into the connection port to flow out from the connection port, and a cleaning jig,
And a suction port for vacuum suction provided in a support portion for supporting the cleaning jig, to which the connection port is connected.

The cleaning jig of the present invention includes a plate-like body configured to be held by a substrate holding member provided in a substrate transport mechanism,
Formed in this plate-like body, and suction holes for sucking the atmosphere;
A connection port provided in the plate-like body and connected to a suction port provided in a support portion on which the plate-like body is placed;
A flow path for allowing the air flow sucked into the suction hole to flow out from the connection port.

According to the particle removal method of the present invention, particles in an atmosphere in a substrate processing apparatus including a plurality of modules each including a processing module that performs processing on a substrate are mounted on a mounting unit. In the method of removing,
A plate-like body configured to be held by the holding member of the substrate transport mechanism, a suction hole formed in the plate-like body for sucking the atmosphere, and a connection port provided in the plate-like body; Using a cleaning jig including a flow path for causing the airflow sucked into the suction hole to flow out from the connection port,
Placing the cleaning jig on the support portion so that the positions of the suction port for vacuum suction provided on the support portion in the substrate processing apparatus and the connection port of the cleaning jig correspond to each other; When,
A step of sucking the atmosphere from the suction hole through the suction port for vacuum suction, the connection port, and the flow path.

The storage medium according to the present invention includes a plurality of modules each including a processing module that performs processing on a substrate, each of which includes a substrate for manufacturing a semiconductor, and holds the substrate by a holding member. A storage medium storing a computer program used in a substrate processing apparatus including a substrate transfer mechanism for transferring between modules;
The computer program is characterized in that a group of steps is assembled so as to execute the particle removal method of the substrate processing apparatus described above.

  In the present invention, when removing particles in a substrate processing apparatus, a cleaning jig formed in a suction port provided in a support portion is supported in a state where a cleaning jig made of a plate-like body having suction holes is supported by the support portion. The ambient atmosphere is sucked from the suction hole. Therefore, particles can be actively collected in the substrate processing apparatus, so that the particle removal efficiency is improved and the cleaning operation time can be shortened.

It is a perspective view which shows a coating and developing apparatus. It is a longitudinal cross-sectional view which shows a coating and developing apparatus. It is a top view which shows a coating and developing apparatus. It is a perspective view which shows the structure of the conveyance arm provided in the conveyance area | region. It is a perspective view which shows the structure of a conveyance arm and a holding claw. It is a top view which shows the structure and flow path of a conveyance arm. It is a top view which shows typically the surface side and back surface side of a cleaning jig. It is a top view which shows typically the flow path inside a cleaning jig. It is a top view which shows arrangement | positioning of the suction hole of the 1st group in the surface side and back surface side of the jig | tool for cleaning. It is a top view which shows arrangement | positioning of the suction hole of the 2nd group in the surface side of a cleaning jig, and a back surface side. It is a top view which shows arrangement | positioning of the suction hole of the 3rd group in the surface side of a jig | tool for cleaning, and a back surface side. It is a flowchart which shows the process from carrying in the cleaning jig | tool in the application | coating and image development apparatus to completion | finish of cleaning. It is explanatory drawing explaining the cleaning method using the jig | tool for a cleaning supported by the conveyance arm. It is explanatory drawing explaining the cleaning method using the jig | tool for a cleaning supported by the conveyance arm. It is explanatory drawing explaining the cleaning method of the temperature control module using the jig | tool for cleaning. It is explanatory drawing explaining the cleaning method of the heating module using the jig | tool for cleaning. It is sectional drawing which shows the other example of the suction opening for vacuum suction.

[First embodiment]
An embodiment in which the substrate processing apparatus of the present invention is applied to a coating and developing apparatus will be described. First, the configuration of the coating and developing apparatus will be described with reference to FIGS. This coating and developing apparatus is configured by linearly connecting a carrier block B1, a processing block B2, and an interface block B3. An exposure station B4 is further connected to the interface block B3.

The carrier block B1 has a role of carrying in and out of the apparatus from a carrier C (for example, FOUP) which is a transfer container for storing a plurality of wafers W having a diameter of, for example, 300 mm, which is a product substrate. 91, a lid 92, and a transfer arm 93 for transferring the wafer W from the carrier C via the lid 92.
The processing block B2 is configured by sequentially laminating first to sixth unit blocks D1 to D6 for performing liquid processing on the wafer W, and the unit blocks D1 to D6 have substantially the same configuration. In FIG. 1, the alphabetic characters given to the unit blocks D1 to D6 indicate the processing type, BCT is an antireflection film forming process, and COT is a resist film forming that supplies a resist to the wafer W to form a resist film. Processing and DEV represent development processing.

In FIG. 3, the structure of the unit block D3 is shown as a representative. The unit block D3 includes a main arm A3 that moves in a linear transfer region R3 from the carrier block B1 side to the interface block B3, and a coating film forming apparatus. Heating-cooling provided with a coating unit 80 including the liquid processing module 5 (5a to 5e), a heating plate that is a mounting unit for heating the wafer W, and a cooling plate for cooling the wafer W And shelf units U1 to U6 in which modules 6 (6a to 6f) are stacked.
On the carrier block B1 side of the transport region R3, a shelf unit U7 configured by a plurality of modules stacked on each other is provided. The transfer of the wafer W between the transfer arm 93 and the main arm A3 is performed via the transfer module TRS and the transfer arm 94 of the shelf unit U7. The delivery module TRS includes a delivery stage which is a placement unit for delivering the wafer W.

  The interface block B3 is for transferring the wafer W between the processing block B2 and the exposure station B4, and includes shelf units U8, U9, and U10 in which a plurality of processing modules are stacked on each other. In the figure, 95 and 96 are transfer arms for transferring the wafer W between the shelf units U8 and U9 and between the shelf units U9 and U10, respectively, and 97 in the figure is between the shelf unit U10 and the exposure station B4. The transfer arm for transferring the wafer W. The main arms A1 to A6 and the transfer arms 93 to 97 correspond to a substrate transfer mechanism.

  To give specific examples of modules provided in the shelf units U7, U8, U9, U10, the above-described delivery module TRS, wafer W used when delivering the wafer W to and from the unit blocks D1-D6. There are a temperature control module CPL that adjusts the temperature of the wafer, a buffer module BU that temporarily stores a plurality of wafers W, a hydrophobization module ADH that hydrophobizes the surface of the wafer W, and the like. In order to simplify the description, the hydrophobic treatment module ADH, the temperature control module CPL, and the buffer module BU are not shown. The stage on which the wafer W is placed in the hydrophobization module ADH and the temperature control module CPL corresponds to a placement unit.

  As shown in FIG. 2, an FFU (Fan Filter Unit) 99 is provided on the ceiling of the coating and developing apparatus. The FFU 99 is provided in order to form a downward flow of clean air in the casing constituting the carrier block B1 and suppress adhesion of particles and the like to the wafer W. The other blocks B2 and B3 are also provided with a mechanism for forming a downdraft of clean gas in the atmosphere, but the description thereof is omitted. Examples of the clean gas include an inert gas such as clean air or nitrogen gas that has passed through a ULPA (Ultra Low Penetration Air) filter or a HEPA (High Efficiency Particulate Air) filter.

  Next, the configuration of the transfer arm will be described by taking the transfer arm A3 provided in the transfer region R3 shown in FIG. 3 as an example. 4 shows a perspective view of the transfer arm A3 and a module group to which the product wafer W is transferred by the transfer arm A3, and FIG. 5 shows the transfer arm A3.

  The transfer arm A3 includes two holding members (forks) 2 provided so as to overlap vertically. The two holding members 2 are respectively installed on a base 42 via an advance / retreat mechanism 41, and each holding member 2 advances and retreats along the base 42 independently of each other. The base 42 is installed on the elevator 44 so as to be rotatable around the vertical axis by the rotation mechanism 43, and the elevator 44 is provided so as to be surrounded by a frame 45 extending in the vertical direction. An elevating mechanism (not shown) is provided inside the frame 45, and the elevating table 44 is moved up and down along the frame 45 (in the Z direction) by the elevating mechanism.

  A guide rail 46 extending in the lateral direction (Y direction) is provided in the housing 60 provided below the heating-cooling module 6. The frame 45 is connected to the guide rail 46 and is configured to be movable in the Y direction along the guide rail 46 by a moving mechanism (not shown). By being configured in this way, each holding member 2 is configured to be movable in each of the X, Y, and Z directions and to be rotatable about the vertical axis. The coating unit 80, the heating-cooling module 6, and the shelf unit. The wafer W can be delivered by accessing the U7 and the shelf unit U8.

  Next, the configuration of the holding member 2 will be described. As shown in FIGS. 5 and 6, the holding member 2 includes a C-shaped portion 40 that is generally C-shaped, and four first to fourth portions are provided on the inner peripheral side of the C-shaped portion 40. The holding claws 50 (50 </ b> A to 50 </ b> D) are provided at positions that hold the peripheral lower surface of the product wafer W at four locations in the circumferential direction. As shown in FIG. 5, the first to fourth holding claws 50 </ b> A to 50 </ b> D are provided with first to fourth suction ports 52 </ b> A to 52 </ b> D each configured by a pad on the upper surface side of the tip portion, respectively. In the fourth suction ports 52A to 52D, one end sides of gas flow paths 55A to 55D extending inside the first to fourth holding claws 50A to 50D are opened as shown in FIG. The other end sides of the gas flow paths 55A to 55D extend to the outside on the base end sides of the first to fourth holding claws 50A to 50D.

  Among the first to fourth holding claws 50A to 50D, the three second to fourth pieces excluding the first holding claw 50A on the right side when FIG. 6 at the base end side of the C-shaped portion 40 is viewed from the front. The gas flow paths 55B to 55D provided in the holding claws 50B to 50D are drawn to the base of the C-shaped portion 40, and then merged, and the suction is a suction mechanism via the gas suction path 54. Connected to the pump 60. A valve 65 is provided in the gas flow path 55B extending from the second holding claw 50B, and a valve 66 is provided in the gas flow path 55C extending from the third holding claw 50C. The gas suction path 54 is provided with a pressure sensor 61, a valve 62, a particle monitor 63, and an exhaust filter 64 from the C-shaped portion 40 side. The particle monitor 63 includes a high-speed infrared sensor, for example, and is configured to receive infrared light after crossing the gas suction path 54. For example, when a particle having a diameter of 20 μm or more flows through the gas suction path 54 and passes through the infrared ray, the received infrared ray is blocked. The number of particles is counted by counting the number of times of blocking.

The gas flow path 55A extending from the first holding claw 50A is connected to the gas flow path 55A via the flow sensor 71 and the valve 67, and is connected to the gas suction path 54 and one end side of the N ₂ (nitrogen) gas supply path 56. Is provided with a three-way valve 72 that forms a flow path switching mechanism. The other end of the N ₂ gas supply line 56 is connected to the N ₂ gas supply source 70, the N ₂ gas supply line 56 and valve 73 and air filter 74 from the downstream side. In this embodiment, the first holding claw 50A, the gas passage 55A, the gas suction passage 54, the pressure sensor 61, the valve 62, the exhaust filter 64, and the suction pump 60 constitute a gas suction mechanism.

  Returning to FIGS. 2 and 3, the outline of the transfer path of the wafer W in the system including the coating and developing apparatus and the exposure station B4 will be briefly described. Wafer W is transferred from carrier C → transfer arm 93 → delivery module TRS of shelf unit U7 → transfer arm 94 → delivery module TRS of shelf unit U7 → unit block D1 (D2) → unit block D3 (D4) → interface block B3 → exposure. The flow proceeds in the order of station B4 → interface block B3 → unit block D5 (D6) → delivery module TRS of shelf unit U7 → transfer arm 93 → carrier C.

  The coating and developing apparatus includes a control unit 90 as shown in FIG. The control unit 90 includes a program storage unit that stores a wafer transfer recipe, a processing recipe of each processing module, and a program in which instructions are set so that a sequence in a cleaning operation is performed. Is done. In this specification, recipes such as conveyance recipes and processes are handled as programs. The control unit 90 also includes a memory, and stores a cleaning jig conveyance schedule in a cleaning operation. The program is stored in a storage medium such as a flexible disk, a compact disk, a hard disk, an MO (magneto-optical disk), or a memory card and installed in the control unit 90.

  Next, the cleaning jig 1 for collecting particles inside the coating and developing apparatus will be described with reference to FIGS. As the cleaning jig 1, a plate-like body 10 is used which is formed into a disc shape having a diameter of 300 mm and a thickness of 3 to 5 mm, for example, of resin or ceramic. FIGS. 7A and 7B show the surface side which is one surface side of the cleaning jig 1 (plate-like body 10) (the surface which becomes the upper surface side when the cleaning jig 1 is held by the holding member 2). ) Is a plan view showing the back surface (the surface on the side where the cleaning jig 1 is held by the holding member 2). As shown in FIG. 7, the plate-like body 10 has first to third groups of suction holes 20 to 22 formed on the plate surface including the front surface side and the back surface side. The suction holes 20 to 22 of the first group to the third group are formed so as to open, for example, in a circular shape having a diameter of 0.2 mm, for example, but in the figure, the first group to the third group are formed. In order to distinguish the suction holes 20 to 22, the first group suction holes 20 are schematically indicated by ◯, the second group suction holes 21 by △, and the third group suction holes 22 by 孔. .

  The suction holes 20 of the first group are arranged on three different circumferences that are concentric with the cleaning jig 1 on the surface side of the cleaning jig 1, and the suction holes 20 of the first group are In order from the circumference close to the center of the cleaning jig 1, two, three, and six are arranged at equal intervals in the circumferential direction, respectively. The suction holes 20 of the first group are formed so as to penetrate the cleaning jig 1 in the thickness direction, and the first group is located on the back side of the cleaning jig 1 at a position corresponding to the front side. The suction hole 20 is formed.

  The suction holes 21 of the second group are adjacent to the suction holes of the first group on two circumferences on the back side of the cleaning jig 1 except for the circumference farthest from the center of the cleaning jig 1. It arrange | positions in the position which divides | segments the circular arc between 20 equally. Further, the third group of suction holes 22 has an arc between adjacent suction holes 20 of the first group on the circumference farthest from the center of the cleaning jig 1 on the surface side of the cleaning jig 1. It is arranged at an equally dividing position.

  The first to fourth suction ports 52 </ b> A to 52 </ b> D of the first to fourth suction ports 52 </ b> A to 52 </ b> D provided on the holding member 2 are provided on the rear surface of the cleaning jig 1 (the surface on the side held by the holding member of the substrate transport mechanism). First to third connection ports 31 to 33 are provided so as to correspond to the arrangement of the three suction ports 52A to 52C. Therefore, in this example, when the cleaning jig 1 is held by the holding member, the first and second suction ports 52A and 52B provided near the rear of the C-shaped portion 40 and the front of the C-shaped portion 40 are located. One provided third suction port 52 </ b> C overlaps with the first to third connection ports 31 to 33 of the cleaning jig 1, respectively.

  The flow path inside the cleaning jig 1 will be described with reference to FIG. Inside the cleaning jig 1, a flow path 23 is formed so that the first group of suction holes 20 and the first connection port 31 communicate with each other, and the second group of suction holes 21 and the second connection holes 31 are in communication with each other. A flow path 24 is formed so as to communicate with the connection port 32, and a flow path 25 is formed so that the suction hole 22 of the third group and the third connection port 33 communicate with each other. That is, the three channels 23 to 25 that open to the suction holes 21 to 23 of the first to third groups are independent of each other. FIG. 8 schematically shows the arrangement of the suction holes 21 to 23 of the first to third groups, the flow paths 23 to 25, and the first to third connection ports 31 to 33. It is the figure which expressed only the horizontal layout of each part seeing through the surface of the body 10, the inside, and the undersurface.

  In the following description, the first group of suction holes 20, the first connection port 31, and the flow path 23 that connects the first group, the second group of suction holes 21, the second connection port 32, both The flow path 24 connecting the two is referred to as a second group, the third group of suction holes 22, the third connection port 33, and the flow path 25 connecting the both is referred to as a third group. As shown in FIG. 8, two flow paths in the first set of flow paths 23, the second set of flow paths 24, and the third set of flow paths 25 intersect, For example, the plate-like body 10 is formed by superimposing three plate-like members, forming a groove in the overlapped portion, so that the two flow paths are so-called two-story, and the intersecting portions of the flow paths intersect vertically. Can be configured.

  The suction holes 20 of the first group are arranged so as to be distributed over the entire surface on the front side and the back side of the cleaning jig 1, so that a suction is performed by connecting a gas suction mechanism to the first connection port 31. Then, as shown in FIGS. 9A and 9B, the entire surface is sucked on the front surface side and the back surface side of the cleaning jig 1. The suction holes 21 of the second group are concentrated on the central portion on the back side of the cleaning jig 1. Therefore, when a gas suction mechanism is connected to the second connection port 32 and suction is performed, suction is performed from the central portion on the back surface side of the cleaning jig 1 as shown in FIGS. Further, since the suction holes 22 of the third group are provided at the peripheral edge portion on the surface side of the cleaning jig 1, when suction is performed by connecting a gas suction mechanism to the third connection port 33, FIG. ) And (b), the suction is performed from the peripheral portion on the surface side of the cleaning jig 1.

  Next, a series of preprocessing steps performed before starting the processing of the product wafer W, which is the substrate to be processed, at the time of starting up the coating and developing apparatus or after completion of the maintenance will be described. First, the cover of the coating and developing device is opened and the inside is wiped up, air blown and air vacuumed to remove large dirt and deposits in each processing module, and a wiping operation is performed. Next, the cover of the coating / developing apparatus is closed, and the FFU 99 and the filter unit (not shown) are driven to form a downflow of clean gas inside the coating / developing apparatus. After completion of the wiping operation, for example, a visual check is performed to check whether sufficiently large dirt and deposits are removed.

  Thereafter, using the cleaning jig 1, the particles in the coating and developing apparatus are removed. There are various methods for removing particles in the atmosphere in the coating and developing apparatus using the cleaning jig 1, and one of these is illustrated in FIG. 12 and each step will be described. First, the carrier C containing one cleaning jig 1 is placed on the placement stage 91. When the cleaning mode is selected by the mode selection unit in the control unit 90, a cleaning program (software) is started. First, the cleaning jig 1 in the carrier C is taken out by the transfer arm 92 (step S1), and is transferred through the coating and developing apparatus along the same path as the product wafer W, for example, to perform a cleaning operation.

  At this time, the drive unit in each processing module excluding the process module supporting the cleaning jig 1 performing the cleaning process and the substrate transfer mechanism, and the drive units such as the substrate transfer mechanism such as the transfer arms 93 to 97 are simultaneously shown. Keep it running continuously. Thereby, the particles adhering to the drive unit are released into the atmosphere. At this time, the recipe is set so that the operation speed of the drive unit is faster than the operation speed of the drive unit when the product wafer W is transferred and processed, or the operation of the drive unit is continuously repeated a predetermined number of times. Is set. Particles are collected by the cleaning jig 1 by creating in advance a harsh situation in which particles are more likely to be generated in the drive unit than when the product wafer W is transferred and processed, and by scattering the particles into the atmosphere. It becomes easy to do.

Next, a specific particle collecting method for the transport region R3 and each processing module using the cleaning jig 1 will be described. First, the collection of particles by the cleaning jig 1 supported by the transfer arm A3 will be described. For example, in the transport area R3 in the processing block B2, the transport arm A3 is placed on the delivery module TRS of the shelf unit U7. When the cleaning jig 1 is scooped up from below, the first to third connection ports 31 to 33 provided in the cleaning jig 1 and the first to third suction ports 52A to 52C on the transfer arm A3 side. And the fourth suction port 52D is located on the surface of the cleaning jig 1 that is separated from the first to third suction holes 20-22. At this time, the valve 62 is “open” and the valves 65 and 66 are “closed”, and the three-way valve 72 is set to a position where the gas flow path 55A and the N ₂ gas supply pipe 56 are connected. . Accordingly, the cleaning jig 1 is sucked from the fourth suction port 52D and is sucked and held by the transfer arm A3.

Thereafter, the valve 73 on the N ₂ gas supply path 56 side and the valve 67 of the gas flow path 55A are opened, and N ₂ gas is supplied to the cleaning jig 1 through the gas flow path 55A. The N ₂ gas supplied from the first connection port 31 flows through the first flow path 23 as shown in FIG. 8 and is distributed over the entire front and back surfaces of the cleaning jig 1. It discharges from the suction hole 20 of 1 group (step S2). Although N ₂ gas flows into the cleaning jig 1, the cleaning jig 1 is adsorbed by the fourth suction port 52D, so there is no possibility of displacement. As described above, in the transport region R3, for example, the driving unit of the transport arm A3 is driven in advance, and the particles 100 are scattered. Further, N ₂ gas is discharged from the entire front surface side and back surface side of the cleaning jig 1, and the particles 100 settled on the bottom surface of the transport region R3 are rolled up by the discharged N ₂ gas and scattered in the atmosphere. .

Thereafter, the valve 67 of the gas flow path 55A is closed, and the three-way valve 72 is switched to connect the gas suction path 54 and the gas flow path 55A. At this time, the valves 65 and 66 are closed, and when the valve 62 is opened, the gas flow path 55A is connected to the gas suction path 54, so that the cleaning jig 1 covers the entire surface of the front surface and the back surface. The atmosphere around the jig 1 is sucked (step S3). 13 and 14 show this state. Therefore, the particles 100 wound up by the N ₂ gas are sucked from the first group of suction holes 20 that are dispersed together with the atmosphere on the entire surface of the front surface and the back surface of the cleaning jig 1. The sucked particles 100 are counted by, for example, the number of particles per unit flow rate by a particle monitor 63 provided on the downstream side of the gas suction path 54, and collected and removed by an exhaust filter 64 provided further downstream. The

  Next, the cleaning jig 1 held on the transfer arm A3 is carried into the processing module and the process proceeds to step S4 where the atmosphere in the processing module is sucked. Before that, the particle monitor 63 performs counting. It may be determined whether or not the number of particles per unit flow rate falls within a preset allowable value. This determination step is not shown in FIG. If the number of particles falls within the preset allowable value, the process proceeds to step S4. If the number of particles does not fall within the preset allowable value, the cleaning jig 1 is held. Air may be discharged and the atmosphere may be sucked while moving the transfer arm A3 along the path along which the transfer arm A3 has moved.

  As an example of the processing module in which the particle removal process is performed, a temperature control module and a heating module for adjusting the temperature of the wafer will be described. The temperature control module includes, for example, a module that adjusts the temperature of the wafer W to a set temperature by the temperature control plate 8 before applying the resist, a cooling module that cools the wafer W after the heat treatment, and the like.

  The temperature control module includes a temperature control plate 8. The temperature control plate 8 is provided with a cooling pipe (not shown) in the interior thereof, and the temperature of the wafer W placed on the temperature control plate 8 is controlled by passing a coolant such as cooling water, for example. It is configured. For example, in the temperature control module, in addition to the removal of particles in the atmosphere in the temperature control module by the cleaning tool 1 held on the transfer arm A3, the cleaning tool mounted on the temperature control plate 8 is used. After 1 is received by the transfer arm A3, particles on the surface of the temperature control plate 8 are removed.

  As shown in FIG. 15, when the cleaning jig 1 is received from the temperature control plate 8 by the transfer arm A3, the first to third connection ports 31 to 33 provided in the cleaning jig 1, and the transfer arm The first to third suction ports 52 </ b> A to 52 </ b> C on the A3 side overlap each other and are sucked and held by the fourth suction port 52 </ b> D. Then, the cleaning jig 1 is slightly raised and disposed so that the lower surface of the cleaning jig 1 and the upper surface of the temperature control plate 8 face each other with a gap therebetween, and then the valve 65 is opened. At this time, the valves 66 and 67 are closed. Then, it is sucked from the suction port 52B and sucked from the second group of suction holes 21 provided in the vicinity of the center of the back surface side of the cleaning jig 1 as shown in FIG.

  Accordingly, as shown in FIG. 15, atmospheric air flows through the gap between the cleaning jig 1 and the temperature control plate 8 toward the center of the temperature control plate 8 and is sucked from the center of the cleaning jig 1. An air flow is formed. Due to this air flow, the particles 100 adhering to the surface of the temperature control plate 8 are detached and sucked and removed by the cleaning jig 1. In the temperature control module, particles are sucked and particles are counted. The number of particles may be evaluated based on the number of particles counted during the particle suction operation. Alternatively, after removing the particles for a certain period of time, the number of particles is measured while continuing the suction operation. You may evaluate based on a numerical value.

  Next, a method for collecting particles in the heating module will be described. As shown in FIG. 16, the heating module includes a mounting stage 7 that is a mounting unit on which the wafer W is mounted. The mounting stage 7 is configured as a heating plate provided with a heater (not shown) inside, and the wafer W mounted on the mounting stage 7 is heated. On the surface of the mounting stage 7, lifting pins (not shown) for transferring the wafer W to and from the transfer arm A3 are provided so as to protrude from the surface of the mounting stage.

  When the wafer W is placed on the placement stage 7 such as a heating module, for example, the particles 100 adhering to the placement stage 7 are rolled up by the air flow generated when the wafer W is placed. It may adhere to the peripheral part. Therefore, in addition to removing particles in the atmosphere in the temperature control module by the cleaning jig 1 held on the transfer arm A3 described above, the cleaning jig 1 is once mounted on the mounting stage 7 and then transferred to the transfer arm. The cleaning jig 1 is received by A3. At this time, the cleaning jig 1 is connected to the first to third suction ports 52A to 52C and the first to third connection ports 31 to 33, and is sucked and held by the fourth suction port 52D.

  Thereafter, the valve 66 is opened and suction is performed from the third suction port 52C. At this time, the valves 65 and 67 are closed. Therefore, it is sucked from the suction holes 22 of the third group provided at the peripheral edge on the surface side of the cleaning jig 1 and drifts near the peripheral edge on the surface side of the cleaning jig 1 as shown in FIG. The particles 100 that are to adhere to the peripheral edge of the jig 1 are sucked from the suction holes 22 of the third group. Similarly, the particles are sucked and the particles are counted. The number of particles may be evaluated based on the number of particles counted during the particle suction operation. Alternatively, after removing the particles for a certain period of time, the number of particles is measured while continuing the suction operation. You may evaluate based on a numerical value.

  In each processing module, particles are collected and counted, and then in step S5, whether the measured number of particles has reached the target cleanliness in the processing module, for example, measurement. It is determined whether or not the number of particles obtained is equal to or less than a first allowable value. Here, if the particles are not sufficiently removed and are not less than the first allowable value, the process proceeds to step S6.

  In step S6, when the number of measured particles is not large, for example, when the first allowable value is exceeded, but it is equal to or smaller than the second allowable value (a value larger than the first allowable value). Returning to step S4, the suction of particles and the counting of particles are repeated in the processing module. When the measured number of particles exceeds the second allowable value, the process proceeds to step S7, air is blown from the suction holes 20 of the first group, and the particles in the processing module are wound up, Make it easier to suck particles. Thereafter, the process returns to step S4, and in the processing module, particles are collected and particles are counted.

  Then, Steps S4 to S7 are repeated, and after the number of particles measured in Step S4 becomes equal to or less than the first allowable value, that is, after the processing module reaches the target cleanliness, the process goes through Step S5. Proceeding to step S8, it is carried into a subsequent processing module, and particles are similarly removed. Thus, the collection of particles is repeated in all the processing modules, and when the collection of the particles is finished in all the processing modules, the cleaning jig 1 is returned to the carrier C. Then, the carrier C containing the product wafer W is placed on the placement stage 91, and the processing of the product wafer W is started.

  According to the above-described embodiment, when removing the particles 100 in the coating / developing apparatus, the cleaning jig 1 is placed on the support section, for example, the holding member of the substrate transport mechanism or the module mounting section in the coating / developing apparatus. In the supported state, the atmosphere around the suction holes 20 to 22 of the first to third groups provided on the surface of the cleaning jig 1 is sucked. Accordingly, since the particles 100 can be actively attracted in the coating and developing apparatus, the removal efficiency of the particles 100 is increased, and the cleaning operation time can be shortened.

  Furthermore, when the cleaning jig 1 is transported to remove the particles 100 in the coating and developing apparatus, the density of the particles 100 in the coating and developing apparatus is monitored, and the suction time is changed according to the number of particles. Like to do. Therefore, the cleaning work time can be shortened.

  When the heating / cooling module 6 collects particles using the cleaning jig 1, the cleaning jig 1 is air-cooled by sucking or discharging gas, and the temperature is set in the heating / cooling module 6. Differences can be formed. Therefore, since the particles are attracted by thermophoresis, there is an effect of increasing the particle collection efficiency. Furthermore, by placing the air-cooled cleaning jig 1 on the heating stage, the temperature lowering time of the heating stage can be shortened. Even when the temperature of the cleaning jig 1 rises, it can be cooled by air supply or suction, so that it can be quickly transferred to the subsequent processing module, so that the time for the cleaning operation can be shortened. There are advantages.

[Second Embodiment]
The second embodiment of the present invention is an example in which a particle monitor type wafer is used instead of counting particles by the particle monitor 63 in the first embodiment. For example, a flow path and a ventilation mechanism are provided on a wafer-type substrate, and particles passing through the flow path are counted by an infrared sensor. Then, for example, the measurement result of the particles is stored in real time in a memory provided on the particle monitor type wafer, and time-series data of the particle count values is stored.

  Then, for example, the particle monitor type wafer is loaded into the coating and developing apparatus by a dedicated carrier C and is transported through the transfer path of the transfer arm, and is also loaded on the particle monitor type wafer in real time while being transferred to the processing module. The time-series data of particle count values is stored in the stored memory. When returning to the dedicated carrier C, the data in the memory is read by the data reading unit provided in the carrier C and transmitted to the control unit 90, and the data is analyzed by the control unit 90. As a result of the analysis, a part having a large particle count value, for example, a specific processing module or a part of the transport path is indexed, and the cleaning jig 1 is again taken out from the carrier C, for example, and the suction action is performed in the same way. . Alternatively, air may be blown out before the suction action. The time series data in the memory can be analyzed as described above because the elapsed time and the position of the sensor are associated with each other if the particle monitor type wafer loading path is determined in advance.

[Third embodiment]
In the first embodiment, the orientation of the cleaning jig 1 with respect to the transfer arm A3 is always constant when the suction operation is performed while being held by the transfer arm A3. However, in the third embodiment of the present invention, This is an example in which the orientation of the cleaning jig 1 with respect to the transfer arm A3 changes when the group of suction holes to be used is different. That is, for example, the arrangement of the three connection ports 31 to 33 of the cleaning jig 1 does not correspond to the three suction ports 52 among the four suction ports of the transfer arm A3. In this case, when the cleaning jig 1 is held, one connection port overlaps with one suction port that can be switched between the suction path and the air discharge path like the suction port 55A described above. The remaining two connection ports do not overlap with the suction ports. In such an example, when the cleaning jig 1 is held on the transport arm A3 and the suction operation of the first group is completed and the suction holes of the other group are utilized, The orientation of the cleaning jig 1 may be set using an alignment module having a rotary stage so that the connection port corresponding to the suction hole overlaps the suction port 55A of the transfer arm A3.

The modifications of the present invention are listed below.
For example, the particles 100 may be removed by providing a suction port on the mounting portion of the processing module. For example, as shown in FIG. 17, the mounting stage 7 is provided with a suction port 84 that sucks the peripheral edge in order to prevent the wafer W from warping when the wafer W is subjected to heat treatment. The same effect can be obtained by connecting the third connection port 33 and sucking particles. In FIG. 17, 85 is a valve, 86 is a three-way valve, 87 is a suction mechanism, and 88 is an air supply unit. In this case, the mounting stage 7 which is a mounting portion corresponds to the supporting portion that supports the cleaning jig 1.

  Further, the suction ports corresponding to the connection ports 31 to 33 of the plurality of sets of the cleaning jig 1 may be provided in a distributed manner on the holding member of the transfer arm A3 and, for example, the mounting portion of the processing module. . In this case, for example, a suction port that overlaps the first connection port 31 is provided in the transport arm A3, and a suction port that overlaps the second connection port 32 is provided in the mounting portion.

Further, the cleaning jig 1 may be supported and sucked by each arm of the carrier block B1 and the interface block B3 other than the processing block, or a transport arm that moves up and down the shelf units U7 to U10.
Furthermore, the set of the suction hole, the flow path, and the connection port provided in the cleaning jig 1 may be one set. Furthermore, the cleaning jig 1 may not be configured to discharge gas from the suction holes.

  The substrate processing apparatus of the present invention is not limited to a coating and developing apparatus, and may be applied to an apparatus for forming a film using a chemical solution containing a precursor of an insulating film, a substrate cleaning apparatus provided with a plurality of cleaning modules, and the like. . Further, it may be used for a wafer prober for inspecting a wafer. In the present specification, wafer inspection is also included in wafer processing.

Further, when the cleaning jig 1 is used to remove particles in the coating and developing apparatus, a plurality of cleaning jigs 1 may be carried into the coating and developing apparatus. For example, 25 cleaning jigs are accommodated in the carrier C and placed on the placement stage 91. Then, the cleaning jig 1 is sequentially taken out by the transfer arm 92, loaded into a coating and developing apparatus, and the cleaning jig 1 is transferred according to the above-described steps, and particles are collected in each processing module and transfer area. You may make it perform.
The particle measuring unit may be provided in the cleaning jig 1.
Further, the suction hole and the connection port provided in the cleaning jig do not have to be formed on the plate surface of the plate-like body 10, and for example, a suction nozzle or a connector for connection may be provided.

  For example, the cleaning jig 1 taken out for the first sheet is transported in the same order as the product wafer W to be processed for the first sheet, is sequentially loaded into each processing module, and captures particles in each processing module. Do a collection. The unit block D3 will be described as an example. The first cleaning jig 1 is sequentially carried into, for example, the liquid processing module 5a and the heating-cooling module 6a and collects particles in each processing module.

  Next, the second cleaning jig 1 is sequentially carried into the liquid processing module 5b and the heating-cooling module 6b and collects particles in each processing module. Then, the fifth cleaning jig 1 is sequentially carried into the liquid processing module 5a and the heating-cooling module 6e, and the particles are collected by each processing module. In this way, the cleaning jig 1 is carried into all the processing modules in the coating and developing apparatus to remove particles. In such a case, the particles in the plurality of processing modules can be simultaneously collected and monitored by the plurality of cleaning jigs 1, so that the particles can be collected more efficiently.

DESCRIPTION OF SYMBOLS 1 Cleaning jig 5 Liquid processing apparatus 6 Heating-cooling apparatus 7 Mounting stage 8 Temperature control plate 20 1st suction hole 21 2nd suction hole 22 3rd suction hole 31 1st connection port 32 2nd Connection port 33 Third connection port 50A to 50D Holding claw 54 Gas suction path 55A to 55D Gas flow path 56 N ₂ gas supply path 60 Suction pump 63 Particle monitor 70 N ₂ gas supply source

Claims (22)

A plurality of modules including a processing module for mounting a semiconductor manufacturing substrate on each mounting portion and processing the substrate;
A substrate transfer mechanism for holding the substrate by a holding member and transferring between the plurality of modules;
A plate-like body configured to be held by the holding member, a suction hole formed in the plate-like body for sucking an atmosphere, a connection port provided in the plate-like body, and the suction hole A flow path for causing the airflow sucked into the connection port to flow out from the connection port, and a cleaning jig,
A substrate processing apparatus comprising: a suction port for vacuum suction provided in a support portion for supporting the cleaning jig, to which the connection port is connected. The support portion is a holding member of the substrate transport mechanism,
The substrate processing apparatus according to claim 1, wherein the suction port for vacuum suction is a suction port for vacuum suction of the substrate.   The substrate processing apparatus according to claim 1, wherein the support unit includes a mounting unit for the module.   A plurality of sets of the suction hole, the flow path, and the connection port of the cleaning jig are provided independently, and the connection ports of each set are provided at different positions in the direction along the plate surface of the plate-like body. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is provided.   5. The substrate processing apparatus according to claim 4, wherein one set of suction holes and the other set of suction holes included in the plurality of sets are formed on one surface and the other surface of the plate surface, respectively. . The support portion is a holding member of the substrate transport mechanism,
The holding member includes a suction port for vacuum-sucking the substrate, and a plurality of suction ports are provided at positions corresponding to the respective connection ports of the cleaning jig,
The substrate processing apparatus according to claim 4, wherein a suction port connected to a suction mechanism can be selected between the plurality of suction ports. Each suction port corresponding to each of the plurality of sets of connection ports is distributed and provided on a plurality of support portions,
5. When the cleaning jig is placed on each support portion, a set of the suction hole, the flow path, and the connection port used in the cleaning jig is different between the support portions. Or the substrate processing apparatus of 5.   The substrate processing apparatus according to claim 1, wherein a measurement unit that measures particles is provided in a suction path that communicates with the suction port.   A mechanism for switching the flow path on the downstream side of the suction port of the support portion between a flow path for sucking from the suction port and a flow path for discharging gas from the suction port is provided. The substrate processing apparatus according to claim 1, wherein: A plate-like body configured to be held by a substrate holding member provided in the substrate transfer mechanism;
Formed in this plate-like body, and suction holes for sucking the atmosphere;
A connection port provided in the plate-like body and connected to a suction port provided in a support portion on which the plate-like body is placed;
A cleaning jig, comprising: a flow path for causing the airflow sucked into the suction hole to flow out from the connection port.   A plurality of sets of suction holes, flow paths, and connection ports are provided independently, and the connection ports of each set are provided at different positions in the direction along the plate surface of the plate-like body. The cleaning jig according to claim 10.   12. The cleaning jig according to claim 11, wherein one set of suction holes and the other set of suction holes included in the plurality of sets are formed on one surface and the other surface of the plate surface, respectively. Ingredients. In a method for removing particles in an atmosphere in a substrate processing apparatus including a plurality of modules including a processing module in which a substrate for manufacturing a semiconductor is mounted on each mounting portion and performs processing on the substrate,
A plate-like body configured to be held by the holding member of the substrate transport mechanism, a suction hole formed in the plate-like body for sucking the atmosphere, and a connection port provided in the plate-like body; Using a cleaning jig including a flow path for causing the airflow sucked into the suction hole to flow out from the connection port,
Placing the cleaning jig on the support portion so that the positions of the suction port for vacuum suction provided on the support portion in the substrate processing apparatus and the connection port of the cleaning jig correspond to each other; When,
And suctioning the atmosphere from the suction hole through the suction port for vacuum suction, the connection port, and the flow path. The support portion is a holding member of the substrate transport mechanism,
14. The method for removing particles of a substrate processing apparatus according to claim 13, wherein the suction port for vacuum suction is a suction port for vacuum suction of the substrate.   15. The method for removing particles from a substrate processing apparatus according to claim 13, wherein the support part includes a mounting part for the module. A plurality of sets of suction holes, flow paths and connection ports of the cleaning jig are provided independently, and the connection ports are provided at different positions in the direction along the plate surface of the plate-like body,
The holding member of the substrate transport mechanism includes a suction port for vacuum suction of the substrate, and a plurality of suction ports are provided at positions corresponding to the respective connection ports of the cleaning jig,
16. The step of holding the cleaning jig on a holding member of the substrate transport mechanism and selecting a suction port connected to a suction mechanism among the plurality of suction ports. The removal method of the particle | grains of the substrate processing apparatus as described in any one. A plurality of sets of suction holes, flow paths and connection ports of the cleaning jig are provided independently, and the connection ports are provided at different positions in the direction along the plate surface of the plate-like body,
The step of sequentially supporting the cleaning jig on the plurality of support portions so that the connection ports of the plurality of sets are sequentially connected to the suction ports of the plurality of support portions, respectively. 16. A method for removing particles from a substrate processing apparatus according to any one of claims 15 to 15.   18. The step of measuring particles by a particle measuring unit provided in a suction path communicating with the suction port is performed after the step of sucking the atmosphere from the suction hole. The method for removing particles of the substrate processing apparatus according to the item.   18. The step of measuring particles by transporting a jig provided with a particle measuring unit by the substrate transport mechanism after the step of sucking the atmosphere from the suction hole. The method for removing particles of the substrate processing apparatus according to one item.   The substrate processing according to claim 18, wherein when the measurement value deviates from an allowable value as a result of performing the particle measurement step, the step of sucking the atmosphere from the suction hole is performed again. A method for removing particles from an apparatus.   The flow path on the downstream side of the suction port of the support portion is switched from the flow path for sucking from the suction port to the flow path for discharging gas from the suction port, and the suction port is placed in the cleaning jig. 21. The method for removing particles from a substrate processing apparatus according to claim 13, further comprising a step of discharging a gas to the outside of the cleaning jig through the flow path and the suction hole. . A plurality of modules each including a processing module for mounting a semiconductor manufacturing substrate on the mounting portion and processing the substrate, and a substrate transfer for holding the substrate by a holding member and transferring between the plurality of modules A storage medium storing a computer program used in a substrate processing apparatus having a mechanism,
A storage medium, wherein the computer program includes a set of steps so as to execute the particle removal method of the substrate processing apparatus according to any one of claims 13 to 21.

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