JP3450584B2 - Semiconductor exposure equipment - Google Patents

Semiconductor exposure equipment

Info

Publication number
JP3450584B2
JP3450584B2 JP11116796A JP11116796A JP3450584B2 JP 3450584 B2 JP3450584 B2 JP 3450584B2 JP 11116796 A JP11116796 A JP 11116796A JP 11116796 A JP11116796 A JP 11116796A JP 3450584 B2 JP3450584 B2 JP 3450584B2
Authority
JP
Japan
Prior art keywords
wafer
cleaning
wafer chuck
cleaning plate
exposure apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP11116796A
Other languages
Japanese (ja)
Other versions
JPH09283418A (en
Inventor
幸夫 高林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP11116796A priority Critical patent/JP3450584B2/en
Publication of JPH09283418A publication Critical patent/JPH09283418A/en
Application granted granted Critical
Publication of JP3450584B2 publication Critical patent/JP3450584B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は半導体基板にレチク
ル等のマスクパターンを露光転写する工程に使用される
露光装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus used in a process of exposing and transferring a mask pattern such as a reticle onto a semiconductor substrate.

【0002】[0002]

【従来の技術】近年半導体メモリの製造分野ではますま
す回路の微細化が進み、要求される回路線幅も0.4μ
mに達している。この要求を満たすにはリソグラフイー
工程で回路パターンを露光転写する露光装置の解像力を
向上させなければならない。これについては、投影レン
ズの開口数を大きくすることで解像力の向上を図ってき
たが、開口数の増加は焦点深度を減少させる。このため
投影レンズの焦点深度は非常に短くなった。この非常に
短い焦点深度に対応するためウエハに要求される平面度
が一層厳しくなるのは避けられない。ウエハとウエハチ
ャックとの間に微小な異物、例えばレジスト砕片が挟み
込まれたりすることがあるが、そのようなことが起こる
と、ウエハはその部分で局所的に盛り上がる。そのため
生じた局所的なデフォーカスに起因して、チップ不良を
生じさせ、ひいては露光工程における歩留りを低下させ
ることになる。このような異物をウエハチャック上から
除去するのに、従来は一定期間を置いて、またはチップ
不良の発生毎に露光工程を中断してウエハチャックを作
業者の手に届く位置に移動させ、例えば砥石や無塵布を
用いて手によって異物を除去していた。
2. Description of the Related Art In recent years, in the field of semiconductor memory manufacturing, circuits are becoming finer and finer, and the required circuit line width is 0.4 μm.
has reached m. In order to meet this requirement, it is necessary to improve the resolving power of an exposure apparatus that exposes and transfers a circuit pattern in a lithographic process. Regarding this, the resolution has been improved by increasing the numerical aperture of the projection lens, but the increase of the numerical aperture decreases the depth of focus. As a result, the depth of focus of the projection lens has become extremely short. It is unavoidable that the flatness required for the wafer becomes more severe in order to cope with this very short depth of focus. A minute foreign matter, such as a resist fragment, may be sandwiched between the wafer and the wafer chuck. When such a thing occurs, the wafer locally rises at that portion. Due to the local defocus that occurs, a chip defect is caused, which in turn lowers the yield in the exposure process. In order to remove such foreign matters from the wafer chuck, conventionally, the exposure process is stopped after a certain period of time or whenever a chip defect occurs, and the wafer chuck is moved to a position where it can be reached by an operator. Foreign substances were removed by hand using a grindstone or a dust-free cloth.

【0003】この手作業による異物除去は30分から1
時間程度の時間を要し、それだけ装置の実稼働時間を減
少させ、スループットが低下するという不都合があっ
た。又、作業が空調された露光装置内部で行われるた
め、温度環境が攪乱されたり、作業者により新たなごみ
が搬入される可能性もある。更に、この手作業がXYス
テージや投影レンズ、ウエハ観察顕微鏡など、精密に組
まれたユニットの密集空間内で行われるため作業性が極
めて悪いのに加え、誤って周辺のユニットを破損する恐
れもある。
This manual removal of foreign matter takes 30 minutes to 1
It takes about time, which reduces the actual operating time of the device and lowers the throughput. Moreover, since the work is performed inside the air-conditioned exposure apparatus, there is a possibility that the temperature environment will be disturbed and that new dust will be carried in by the worker. Further, since this manual work is performed in a dense space of units that are precisely assembled, such as an XY stage, a projection lens, and a wafer observation microscope, workability is extremely poor and there is a risk of accidentally damaging peripheral units. is there.

【0004】このため露光装置にクリーニング機能を持
たせることが提案され、例えばウエハチャックの面に直
接接触して研磨するクリーニングプレートとXYステー
ジとの相互間の反復運動により異物を除去するものや、
無塵布を押しつけてXYステージを移動することにより
異物を除去するものがある。
For this reason, it has been proposed to provide the exposure apparatus with a cleaning function, for example, to remove foreign matter by repetitive movement between a cleaning plate for directly contacting the surface of a wafer chuck and polishing and an XY stage,
There is one that removes foreign matter by pressing a dust-free cloth and moving the XY stage.

【0005】[0005]

【発明が解決しようとする課題】例えば砥石を用いてウ
エハチャックの面を研磨するクリーニングプレートの場
合、クリーニングの繰り返しにより、ウエハチャック面
を磨耗させ、平面度を低下させるという不都合が生じ
た。またクリーニングプレートが只の平面プレートであ
ると、強固に付着した異物の除去は困難であった。それ
故、ウエハチャックを傷めることなく確実に異物を除去
するクリーニング手段が望まれていた。又、クリーニン
グ部材の駆動機構がXYステージの上方にあるためクリ
ーニング動作に起因した駆動機構からの二次的な発塵に
よる新たな異物付着の可能性があった。クリーニング部
材の駆動機構がXYステージの上方にあるということ
で、ステージ空間を一定温度かつ超クリーン状態に維持
する温調クリーンエアの流れを妨げてもいた。
For example, in the case of a cleaning plate which polishes the surface of the wafer chuck using a grindstone, there is an inconvenience that the wafer chuck surface is abraded and the flatness is lowered by repeated cleaning. Further, if the cleaning plate is a flat plate, it is difficult to remove the foreign matter that is firmly attached. Therefore, there has been a demand for a cleaning unit that reliably removes foreign substances without damaging the wafer chuck. Further, since the drive mechanism of the cleaning member is above the XY stage, there is a possibility that new foreign matter may be attached due to secondary dust generation from the drive mechanism due to the cleaning operation. Since the drive mechanism of the cleaning member is above the XY stage, the flow of temperature-controlled clean air that maintains the stage space at a constant temperature and in an ultra-clean state has been hindered.

【0006】更に、クリーニング手段によりウエハチャ
ックから除去した異物がクリーニング部材から剥離し
て、飛散したり、再付着を起こすという問題もある。
又、露光装置のスループットの観点から見れば、クリー
ニング作業による稼働中断を最小にしなければならず、
それにはクリーニングのためのXYステージの移動領域
もしくはクリーニング部材の移動領域を最小にすること
が肝要である。
Further, there is a problem that the foreign matter removed from the wafer chuck by the cleaning means is peeled off from the cleaning member and scattered or redeposited.
Also, from the viewpoint of the throughput of the exposure apparatus, it is necessary to minimize the operation interruption due to the cleaning work,
For that purpose, it is important to minimize the movement area of the XY stage or the movement area of the cleaning member for cleaning.

【0007】本発明の目的は以上の問題を解消する半導
体露光装置を提供することであり、具体的に言えば、温
調クリーンエアの流れを妨げることなく、異物をウエハ
チャックから効率良く除去するクリーニング手段を設け
た半導体露光装置を提供することである。
An object of the present invention is to provide a semiconductor exposure apparatus which solves the above problems. Specifically, foreign matter can be efficiently removed from a wafer chuck without obstructing the flow of temperature controlled clean air. An object of the present invention is to provide a semiconductor exposure apparatus provided with cleaning means.

【0008】[0008]

【課題を解決するための手段】上記の目的を達成するた
本発明の半導体露光装置は、XYステージ上にウエ
ハを吸着するウエハチャックと、ウエハチャックのウ
エハ接触面に付着した異物を除去するクリーニング手段
とを有し、クリーニング手段はクリーニングプレート
と、クリーニングプレートを駆動する機構部とを備
え、機構部は前記クリーニングプレートを前記ウエハ
チャックのウエハ接触面に対して偏心回転させる回転機
構を備え、前記クリーニングプレートは前記ウエハチャ
ックのウエハ接触面に対面する平面が前記ウエハチャッ
クの平面度と同様に加工された平面を有し、該平面に格
子状の溝を有するとともに、該溝のピッチが前記回転機
構の回転半径よりも小さいことを特徴とする。この構成
によりウエハチャックに強固に付着した異物をも掻き落
とすことができる
To achieve the above object, according to an aspect of, the semi-conductor exposure apparatus of the present invention includes a wafer chuck for attracting a wafer on the XY stage, the foreign matter adhering to the wafer contact surface of the wafer chuck and a cleaning means for removing, the cleaning means comprises a cleaning plate, and a mechanism for driving the cleaning plate, the mechanism includes the said cleaning plate wafer
Rotating machine that rotates eccentrically to the wafer contact surface of the chuck
And the cleaning plate is the wafer chuck.
The plane that faces the wafer contact surface of the chuck is the wafer chuck.
Has a flat surface that is processed similarly to the flatness of
It has a child-like groove, and the pitch of the groove is the rotating machine.
It is smaller than the radius of rotation of the structure. This structure also scrapes off foreign matter that has firmly adhered to the wafer chuck.
Can be

【0009】また、本発明の半導体露光装置において
は、前記機構部は、前記クリーニングプレートを該機構
部の配置位置と前記ウエハチャックのウエハ接触面との
間で往復動させる水平駆動機構を更に備えるとよい
[0009]Also, The present inventionHalf ofConductor exposure equipmentAt
IsThe mechanical unit includes the cleaning plate
Between the arrangement position of the parts and the wafer contact surface of the wafer chuck
It is preferable to further include a horizontal drive mechanism for reciprocating between the two..

【0010】さらに、本発明の半導体露光装置において
は、前記クリーニングプレートがウエハチャックと同一
材料であるとよい
Furthermore, <br/> in semiconductors exposure apparatus of the present invention are the same as the cleaning plate is a wafer chuck
Good material .

【0011】上記の各構成において、クリーニングプレ
ートはウエハチャックと同一材料であるのが好ましい。
これは、クリーニングプレートとウエハチャックとの摺
動によるクリーニングプレートの磨耗とウエハチャック
の磨耗を最小限に抑えるためである。なお、クリーニン
グプレートは、ウエハチャックのウエハ接触面に対面す
る面に複数の弾性体突起を有する平面プレートでもよ
い。
In each of the above constructions, the cleaning plate is preferably made of the same material as the wafer chuck.
This is to minimize the abrasion of the cleaning plate and the abrasion of the wafer chuck due to the sliding of the cleaning plate and the wafer chuck. The cleaning plate may be a flat plate having a plurality of elastic protrusions on the surface facing the wafer contact surface of the wafer chuck.

【0012】前記機構部は、クリーニングプレートを機
構部の配置位置とウエハチャックのウエハ接触面との間
で往復動させる水平駆動機構と、クリーニングプレート
をウエハチャックのウエハ接触面に対して偏心回転させ
る回転機構とから構成されているのが好ましい。この前
記回転機構に、クリーニングプレートとして前記複数の
エッジを有する平面プレートを取り付けて使用する場
合、複数のエッジが偏心回転よりも小さいピッチの格子
状エッジとする。回転により効率よくエッジが異物を擦
るようにするためである。
The mechanism section has a horizontal drive mechanism for reciprocating the cleaning plate between the arrangement position of the mechanism section and the wafer contact surface of the wafer chuck, and rotates the cleaning plate eccentrically with respect to the wafer contact surface of the wafer chuck. It is preferably composed of a rotating mechanism. When the flat plate having the plurality of edges is attached to the rotating mechanism and used as the cleaning plate, the plurality of edges are grid-like edges having a pitch smaller than the eccentric rotation. This is because the edge efficiently scrapes the foreign matter by the rotation.

【0013】[0013]

【実施例】 以下に、添付図を参照して本発明の実施例を
説明する。図2を参照して、本発明の露光装置の基本構
成を説明する。図中、1は超高圧水銀灯を持つ照明光
源、2は転写しようとするパターンを描画したレチク
ル、3は縮小投影のためのレンズ、4は被露光基板であ
るウエハである。ウエハ4はXYステージ6に載せられ
たウエハチャック5に真空吸着される。XYステージ6
の歩進により所望位置へXYステージ6を移して、そこ
でパターン露光を行う。ウエハ4が露光されるXYステ
ージ空間は、ゴミ等に起因したパターン欠陥の発生を排
除するため、また温度変化によるXYステージの歩進量
の誤差要因を排除するためクリーン度クラス1以下およ
び0.05℃の温度制御による環境コントロールをウル
パフイルタ7からのエアーフローにより行う。
Embodiments of the present invention will be described below with reference to the accompanying drawings. The basic structure of the exposure apparatus of the present invention will be described with reference to FIG. In the figure, 1 is an illumination light source having an ultra-high pressure mercury lamp, 2 is a reticle on which a pattern to be transferred is drawn, 3 is a lens for reduction projection, and 4 is a wafer which is a substrate to be exposed. The wafer 4 is vacuum-sucked by the wafer chuck 5 mounted on the XY stage 6. XY stage 6
The XY stage 6 is moved to a desired position by stepping, and pattern exposure is performed there. In the XY stage space where the wafer 4 is exposed, in order to eliminate the occurrence of pattern defects caused by dust and the like, and to eliminate the error factor of the step amount of the XY stage due to the temperature change, cleanliness class 1 or less and 0. Environmental control by controlling the temperature of 05 ° C. is performed by the air flow from the ULPA filter 7.

【0014】次に本発明の特徴であるチャッククリーニ
ングの一実施例につき図1を参照して説明する。図中、
8はウエハチャック5をクリーニングするクリーニング
プレートであり、9はクリーニングプレート8の支持部
材、10はこの支持部材9を案内する直線ガイドであっ
て、これらが駆動系(図示せず)と共に水平駆動機構部
を構成する。チャッククリーニングは露光装置制御部の
指令により、または作業者の指令により機構部の駆動系
により、ステージ空調空間外部の待機位置からクリーニ
ングを行う位置にクリーニングプレート8を送り込む。
一方、XYステージ6はあらかじめ決められたクリーニ
ング位置で静止し、待機している。支持部材9の上下方
向駆動機構(図示せず)によりクリーニングプレート8
をウエハチャック5に対して適正な予圧状態で接触させ
る。更に、支持部材9は平行リング機構によりクリーニ
ングプレート8を回転させる回転機構部を持つ。これに
よりクリーニングプレート8とウエハチャック5とは偏
心した回転により相対運動を行う。ここでは回転運動と
しているが、局所的な反復運動でもよいし、また高周波
振動を機構部で印加して運動させてもよい。このクリー
ニング動作の完了判定は、例えば駆動トルクをモニター
して規定トルク以下の場合に終了判定してもよい。
Next, an embodiment of chuck cleaning which is a feature of the present invention will be described with reference to FIG. In the figure,
Reference numeral 8 is a cleaning plate for cleaning the wafer chuck 5, 9 is a supporting member for the cleaning plate 8, 10 is a linear guide for guiding the supporting member 9, and these are horizontal drive mechanisms together with a drive system (not shown). Make up the department. For chuck cleaning, the cleaning plate 8 is sent from a standby position outside the stage air-conditioned space to a position to be cleaned by a drive system of a mechanical unit according to a command from an exposure apparatus control unit or a command from an operator.
On the other hand, the XY stage 6 stands still and stands by at a predetermined cleaning position. The cleaning plate 8 is driven by a vertical drive mechanism (not shown) for the support member 9.
Are brought into contact with the wafer chuck 5 in an appropriate preload state. Further, the support member 9 has a rotation mechanism portion that rotates the cleaning plate 8 by a parallel ring mechanism. As a result, the cleaning plate 8 and the wafer chuck 5 perform relative movement due to eccentric rotation. Here, the rotational motion is used, but it may be a local repetitive motion, or a high-frequency vibration may be applied by the mechanical unit to move. The completion determination of the cleaning operation may be performed, for example, by monitoring the driving torque and determining the completion when the driving torque is equal to or less than the specified torque.

【0015】クリーニングプレートの一実例を図3を参
照して説明する。図3(a)はクリーニングプレートの
クリーニングに使用する面を示す。図3(b)の断面図
から明らかなように格子状の部分は溝となって接触面に
対して凹所を形成し、それにより平面上にエッジ8−a
を形成する。機構部の回転動作によりウエハチャック5
上の各点は、少なくとも一回はクリーニングプレートの
各エッジ8−aを通過することになる。このエッジが強
固に付着したレジスト砕片等の異物を掻き落とす。クリ
ーニングプレートの接触面8−bの平面度はウエハチャ
ック5の平面度と同様に高精度に加工されている。図1
の実施例における平行リンクの機構によれば、一回転の
摺動距離が短い上に、複数回のエッジ通過が可能となる
ため、クリーニングプレートとウエハチャックとの摺動
による磨耗や平面度の劣化を起こし難い。
An example of the cleaning plate will be described with reference to FIG. FIG. 3A shows a surface used for cleaning the cleaning plate. As is apparent from the cross-sectional view of FIG. 3B, the lattice-like portion becomes a groove to form a recess with respect to the contact surface, whereby the edge 8-a is formed on the plane.
To form. The wafer chuck 5 is rotated by the rotating operation of the mechanical section.
Each of the points above will pass through each edge 8-a of the cleaning plate at least once. This edge scrapes off foreign matter such as resist fragments that are firmly attached. The flatness of the contact surface 8-b of the cleaning plate is processed with high precision like the flatness of the wafer chuck 5. Figure 1
According to the parallel link mechanism in the above embodiment, since the sliding distance of one rotation is short and the edge can pass a plurality of times, abrasion and flatness deterioration due to sliding between the cleaning plate and the wafer chuck are caused. Hard to cause.

【0016】クリーニング動作によりウエハチャック上
より除去した異物を飛散させたり、再付着させないため
クリーニングプレートに負圧吸引用の溝または孔8−c
を設け、異物を吸引除去できるようにしている。
Since the foreign matter removed from the wafer chuck by the cleaning operation is not scattered or redeposited, a groove or hole 8-c for sucking a negative pressure is formed in the cleaning plate.
Is provided so that foreign matter can be removed by suction.

【0017】格子付きのクリーニングプレートの他に、
図4に示すプレートの下面にナイロン等の樹脂突起を多
数埋め込んだブラシ状プレートを用いてもよい。
In addition to the cleaning plate with a grid,
You may use the brush-shaped plate which embedded many resin protrusions, such as nylon, in the lower surface of the plate shown in FIG.

【0018】[0018]

【発明の効果】本発明により露光装置のウエハチャック
のクリーニングを短時間で確実に実施でき、半導体露光
装置の非稼働時間を短縮できる。また、クリーニング手
段の存在が半導体露光装置に対して温度環境を擾乱させ
たり、汚染を導入するなどの恐れはない。
According to the present invention, the wafer chuck of the exposure apparatus can be reliably cleaned in a short time, and the non-operation time of the semiconductor exposure apparatus can be shortened. Also, there is no fear that the presence of the cleaning means disturbs the temperature environment of the semiconductor exposure apparatus or introduces contamination.

【図面の簡単な説明】[Brief description of drawings]

【図1】 半導体露光装置のステージ空間の平面図であ
る。
FIG. 1 is a plan view of a stage space of a semiconductor exposure apparatus.

【図2】 半導体露光装置の全体構成図である。FIG. 2 is an overall configuration diagram of a semiconductor exposure apparatus.

【図3】 クリーニングプレートの接触面(a)とクリ
ーニングプレートの破断部分の断面図(b)である。
FIG. 3 is a sectional view (b) of a contact surface (a) of the cleaning plate and a broken portion of the cleaning plate.

【図4】 クリーニングブラシの破断部分の側面図であ
る。
FIG. 4 is a side view of a broken portion of the cleaning brush.

【符号の説明】[Explanation of symbols]

1:照明系、2:レチクル、3:縮小投影レンズ、4:
ウエハ、5:ウエハチャック、6:XYステージ、7:
ウルパフイルター、8:クリーニングプレート、8a:
エッジ、8b:チャック接触面、8c:負圧吸引孔、
9:支持部材、10:直線ガイド、11:ナイロンブラ
シ。
1: Illumination system, 2: Reticle, 3: Reduction projection lens, 4:
Wafer, 5: Wafer chuck, 6: XY stage, 7:
Urpa filter, 8: Cleaning plate, 8a:
Edge, 8b: chuck contact surface, 8c: negative pressure suction hole,
9: Support member, 10: Linear guide, 11: Nylon brush.

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 XYステージ上にウエハを吸着するウエ
ハチャックと、ウエハチェックのウエハ接触面に付着
した異物を除去するクリーニング手段とを有し、クリ
ーニング手段はクリーニングプレートと、クリーニン
グプレートを駆動する機構部とを備え、該機構部は前記
クリーニングプレートを前記ウエハチャックのウエハ接
触面に対して偏心回転させる回転機構を備え、前記クリ
ーニングプレートは前記ウエハチャックのウエハ接触面
に対面する平が前記ウエハチャックの平面度と同様に
加工された平面を有し、該平面に格子状の溝を有すると
ともに、該溝のピッチが前記回転機構の回転半径よりも
小さいことを特徴とする半導体露光装置。
And 1. A wafer chuck for adsorbing the wafer on the XY stage, and a cleaning means for removing foreign matter adhering to the wafer contact surface of the wafer check, the chestnut <br/> Ningu means and cleaning plate , and a mechanism for driving the Cleaning <br/> Gupureto, the mechanism is the
Attach the cleaning plate to the wafer chuck.
A rotating mechanism for eccentric rotation relative Sawamen, the chestnut <br/> over training plate, like the flatness of the flat surface you face the wafer contact surfaces of the wafer chuck the wafer chuck
If it has a processed flat surface and the grid-like grooves are formed in the flat surface,
In both cases, the pitch of the groove is larger than the radius of rotation of the rotating mechanism.
A semiconductor exposure apparatus characterized by being small .
【請求項2】 前記機構部は、前記クリーニングプレー
トを該機構部の配置位置と前記ウエハチャックのウエハ
接触面との間で往復動させる水平駆動機構を更にえる
ことを特徴とする請求項に記載の半導体露光装置。
Wherein said mechanism unit, obtain further Bei the horizontal driving mechanism for reciprocating between the cleaning plate and the arrangement position of the mechanism the wafer contact surface of the wafer chuck
The semiconductor exposure apparatus according to claim 1 , wherein:
【請求項3】 前記クリーニングプレートがウエハチャ
ックと同一材料であることを特徴とする請求項に記載
の半導体露光装置。
3. The semiconductor exposure apparatus according to claim 1 , wherein the cleaning plate is made of the same material as the wafer chuck.
JP11116796A 1996-04-09 1996-04-09 Semiconductor exposure equipment Expired - Lifetime JP3450584B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11116796A JP3450584B2 (en) 1996-04-09 1996-04-09 Semiconductor exposure equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11116796A JP3450584B2 (en) 1996-04-09 1996-04-09 Semiconductor exposure equipment

Publications (2)

Publication Number Publication Date
JPH09283418A JPH09283418A (en) 1997-10-31
JP3450584B2 true JP3450584B2 (en) 2003-09-29

Family

ID=14554185

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11116796A Expired - Lifetime JP3450584B2 (en) 1996-04-09 1996-04-09 Semiconductor exposure equipment

Country Status (1)

Country Link
JP (1) JP3450584B2 (en)

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WO2006070748A1 (en) * 2004-12-28 2006-07-06 Nikon Corporation Maintenance method, exposure device, and maintenance member
US20090014030A1 (en) * 2007-07-09 2009-01-15 Asml Netherlands B.V. Substrates and methods of using those substrates
JP6148850B2 (en) * 2012-12-05 2017-06-14 日本特殊陶業株式会社 Cleaning material and cleaning method
JP6135617B2 (en) * 2014-08-07 2017-05-31 東京エレクトロン株式会社 Substrate processing apparatus, cleaning jig, particle removal method of substrate processing apparatus, and storage medium
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Also Published As

Publication number Publication date
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