JP6121653B2 - 熱電材料の製造方法 - Google Patents

熱電材料の製造方法 Download PDF

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JP6121653B2
JP6121653B2 JP2012119291A JP2012119291A JP6121653B2 JP 6121653 B2 JP6121653 B2 JP 6121653B2 JP 2012119291 A JP2012119291 A JP 2012119291A JP 2012119291 A JP2012119291 A JP 2012119291A JP 6121653 B2 JP6121653 B2 JP 6121653B2
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thermoelectric
material composition
grain boundary
values
thermoelectric material
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JP2012119291A
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Japanese (ja)
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JP2012248845A (ja
JP2012248845A5 (enExample
Inventor
バナジー デバシシ
バナジー デバシシ
ツァン ミンジュアン
ツァン ミンジュアン
木太　拓志
拓志 木太
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トヨタ モーター エンジニアリング アンド マニュファクチャリング ノース アメリカ，インコーポレイティド
トヨタ モーター エンジニアリング アンド マニュファクチャリング ノース アメリカ，インコーポレイティド
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/857—Thermoelectric active materials comprising compositions changing continuously or discontinuously inside the material

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Powder Metallurgy (AREA)
JP2012119291A 2011-05-27 2012-05-25 熱電材料の製造方法 Expired - Fee Related JP6121653B2 (ja)

Applications Claiming Priority (2)

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US13/117,286 US10811160B2 (en) 2011-05-27 2011-05-27 Method of producing thermoelectric material
US13/117,286 2011-05-27

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JP2012248845A JP2012248845A (ja) 2012-12-13
JP2012248845A5 JP2012248845A5 (enExample) 2015-06-11
JP6121653B2 true JP6121653B2 (ja) 2017-04-26

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JP2012119291A Expired - Fee Related JP6121653B2 (ja) 2011-05-27 2012-05-25 熱電材料の製造方法

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JP (1) JP6121653B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10672966B2 (en) * 2011-05-27 2020-06-02 Toyota Motor Engineering & Manufacturing North America, Inc. Method of producing thermoelectric material
WO2015126817A1 (en) * 2014-02-18 2015-08-27 University Of Houston System THERMOELECTRIC COMPOSITIONS AND METHODS OF FABRICATING HIGH THERMOELECTRIC PERFORMANCE MgAgSb-BASED MATERIALS
JP6603518B2 (ja) * 2015-09-04 2019-11-06 株式会社日立製作所 熱電変換材料および熱電変換モジュール
JP6892786B2 (ja) * 2017-05-10 2021-06-23 株式会社日立製作所 熱電変換材料及び熱電変換モジュール
CN110622328B (zh) * 2017-05-19 2023-12-08 日东电工株式会社 半导体烧结体、电气电子部件及半导体烧结体的制造方法
JP7176339B2 (ja) 2018-10-05 2022-11-22 富士通株式会社 酸素発生電極、及び酸素発生装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3559962B2 (ja) 2000-09-04 2004-09-02 日本航空電子工業株式会社 熱電変換材料及びその製造方法
US7195721B2 (en) 2003-08-18 2007-03-27 Gurin Michael H Quantum lilypads and amplifiers and methods of use
WO2009000136A1 (en) 2007-06-22 2008-12-31 The Hong Kong University Of Science And Technology Polycrystalline silicon thin film transistors with bridged-grain structures
US7734428B2 (en) * 2007-10-19 2010-06-08 Toyota Motor Engineering & Manufacturing North America, Inc. Method of producing thermoelectric material
JP4715953B2 (ja) * 2008-10-10 2011-07-06 トヨタ自動車株式会社 ナノコンポジット熱電変換材料、それを用いた熱電変換素子およびナノコンポジット熱電変換材料の製造方法
US20110143489A1 (en) * 2009-12-11 2011-06-16 General Electric Company Process for making thin film solar cell

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JP2012248845A (ja) 2012-12-13
US10811160B2 (en) 2020-10-20
US20120298924A1 (en) 2012-11-29

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