JP6121653B2 - 熱電材料の製造方法 - Google Patents
熱電材料の製造方法 Download PDFInfo
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 4
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- 238000009826 distribution Methods 0.000 description 4
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- 229910018989 CoSb Inorganic materials 0.000 description 3
- 230000005679 Peltier effect Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- 229910003321 CoFe Inorganic materials 0.000 description 2
- 229910002665 PbTe Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910005642 SnTe Inorganic materials 0.000 description 2
- -1 alkali metal salt Chemical class 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
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- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 238000012935 Averaging Methods 0.000 description 1
- 229910001152 Bi alloy Inorganic materials 0.000 description 1
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 229910007657 ZnSb Inorganic materials 0.000 description 1
- 230000005535 acoustic phonon Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
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- 229910003472 fullerene Inorganic materials 0.000 description 1
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- 238000005259 measurement Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000003949 trap density measurement Methods 0.000 description 1
- 239000002918 waste heat Substances 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/857—Thermoelectric active materials comprising compositions changing continuously or discontinuously inside the material
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Description
[1]
複数の結晶粒及び粒界を有する熱電材料の製造方法であって、
熱電材料用に調査される材料組成を決定すること、
現状の製造技術を用いてその材料組成に得られるマトリックス粒度及びマトリックス粒界障壁高さの値の範囲を決定すること、
粒度及び粒界障壁高さの値の範囲の関数として、その材料組成の複数のジーベック係数を計算すること、
粒度及び粒界障壁高さの値の範囲の関数として、その材料組成の複数の電気抵抗値を計算すること、
粒度及び粒界障壁高さの値の範囲の関数として、その材料組成の複数の熱伝導値を計算すること、
計算したジーベック係数、計算した電気抵抗値及び計算した熱伝導値の関数として、その材料組成の性能指数値の範囲を計算すること、
粒度及び粒界障壁高さの値の関数として、その材料組成の性能指数値の一般最大範囲を決定すること、
性能指数値の最大範囲に相当する平均粒度及び粒界障壁高さ及び材料組成を有する熱電材料を製造することを含む方法。
[2]
材料組成がマトリックス熱電材料組成である、項目1記載の方法。
[3]
材料組成がナノ複合熱電材料組成である、項目1記載の方法。
[4]
マトリックス粒度の値が5〜100ナノメートルである、項目1記載の方法。
[5]
粒界障壁高さの値が10〜300meVである、項目1記載の方法。
[6]
製造された熱電材料のマトリックス粒度が、マトリックス粒度にほぼ等しい平均直径を有する複数のナノ粒子を固めることにより得られる、項目1記載の方法。
[7]
製造された熱電材料の粒界障壁高さが、熱電材料のドープにより得られる、項目1記載の方法。
[8]
製造された熱電材料の粒界障壁高さが、熱電材料の製造に用いられる複数のナノ粒子の表面を変えることにより得られる、項目1記載の方法。
[9]
複数のナノ粒子の表面を変えることが、複数のナノ粒子の表面にコーティングを適用することを含む、項目8記載の方法。
Claims (8)
- 複数の結晶粒及び粒界を有する熱電材料の製造方法であって、
熱電材料用に調査される材料組成を決定すること、
現状の製造技術を用いてその材料組成に得られるマトリックス粒度及びマトリックス粒界障壁高さの値の範囲を決定すること、
粒度及び粒界障壁高さの得られる値の範囲の関数として、その材料組成の複数のジーベック係数、電気抵抗値及び熱伝導値を計算すること、
計算したジーベック係数、計算した電気抵抗値及び計算した熱伝導値の関数として、その材料組成の性能指数値の範囲を計算すること、
粒度及び粒界障壁高さの値の決定された範囲の関数として、その材料組成の性能指数値の範囲を決定すること、
調査された材料組成を有する粉末を提供すること、ここでこの粉末は、性能指数の決定された範囲内にある性能指数を与える粒度以下の平均直径を有する、
粉末を固め、性能指数値の決定された範囲内の性能指数を与える粒度、粒界障壁高さ及び決定された材料組成を有する熱電材料を製造することを含み、製造される熱電材料の粒界障壁高さが、熱電材料のドープにより得られる方法。 - 材料組成がマトリックス熱電材料組成である、請求項1記載の方法。
- 材料組成がナノ複合熱電材料組成である、請求項1記載の方法。
- マトリックス粒度の値が5〜100ナノメートルである、請求項1記載の方法。
- 粒界障壁高さの値が10〜300meVである、請求項1記載の方法。
- 製造された熱電材料のマトリックス粒度が、マトリックス粒度にほぼ等しい平均直径を有する複数のナノ粒子を固めることにより得られる、請求項1記載の方法。
- 製造された熱電材料の粒界障壁高さが、熱電材料の製造に用いられる複数のナノ粒子の表面を変えることにより得られる、請求項1記載の方法。
- 複数のナノ粒子の表面を変えることが、複数のナノ粒子の表面にコーティングを適用することを含む、請求項7記載の方法。
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US13/117,286 US10811160B2 (en) | 2011-05-27 | 2011-05-27 | Method of producing thermoelectric material |
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JP2012248845A JP2012248845A (ja) | 2012-12-13 |
JP2012248845A5 JP2012248845A5 (ja) | 2015-06-11 |
JP6121653B2 true JP6121653B2 (ja) | 2017-04-26 |
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US10672966B2 (en) * | 2011-05-27 | 2020-06-02 | Toyota Motor Engineering & Manufacturing North America, Inc. | Method of producing thermoelectric material |
WO2015126817A1 (en) * | 2014-02-18 | 2015-08-27 | University Of Houston System | THERMOELECTRIC COMPOSITIONS AND METHODS OF FABRICATING HIGH THERMOELECTRIC PERFORMANCE MgAgSb-BASED MATERIALS |
JP6603518B2 (ja) * | 2015-09-04 | 2019-11-06 | 株式会社日立製作所 | 熱電変換材料および熱電変換モジュール |
JP6892786B2 (ja) * | 2017-05-10 | 2021-06-23 | 株式会社日立製作所 | 熱電変換材料及び熱電変換モジュール |
EP3627572B1 (en) * | 2017-05-19 | 2023-10-04 | Nitto Denko Corporation | Method of producing semiconductor sintered body, electrical/electronic member and semiconductor sintered body |
JP7176339B2 (ja) | 2018-10-05 | 2022-11-22 | 富士通株式会社 | 酸素発生電極、及び酸素発生装置 |
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JP3559962B2 (ja) | 2000-09-04 | 2004-09-02 | 日本航空電子工業株式会社 | 熱電変換材料及びその製造方法 |
US7195721B2 (en) | 2003-08-18 | 2007-03-27 | Gurin Michael H | Quantum lilypads and amplifiers and methods of use |
WO2009000136A1 (en) | 2007-06-22 | 2008-12-31 | The Hong Kong University Of Science And Technology | Polycrystalline silicon thin film transistors with bridged-grain structures |
US7734428B2 (en) * | 2007-10-19 | 2010-06-08 | Toyota Motor Engineering & Manufacturing North America, Inc. | Method of producing thermoelectric material |
JP4715953B2 (ja) * | 2008-10-10 | 2011-07-06 | トヨタ自動車株式会社 | ナノコンポジット熱電変換材料、それを用いた熱電変換素子およびナノコンポジット熱電変換材料の製造方法 |
US20110143489A1 (en) * | 2009-12-11 | 2011-06-16 | General Electric Company | Process for making thin film solar cell |
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