JP6121615B2 - 携帯デバイス用透明光検出素子 - Google Patents

携帯デバイス用透明光検出素子 Download PDF

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JP6121615B2
JP6121615B2 JP2016505870A JP2016505870A JP6121615B2 JP 6121615 B2 JP6121615 B2 JP 6121615B2 JP 2016505870 A JP2016505870 A JP 2016505870A JP 2016505870 A JP2016505870 A JP 2016505870A JP 6121615 B2 JP6121615 B2 JP 6121615B2
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quantum dots
graphene film
array
graphene
single layer
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JP2016520438A (ja
JP2016520438A5 (enExample
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アラン コッリ
アラン コッリ
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ノキア テクノロジーズ オーユー
ノキア テクノロジーズ オーユー
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H10F77/1433—Quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/2823—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices being conductor-insulator-semiconductor devices, e.g. diodes or charge-coupled devices [CCD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/288—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being sensitive to multiple wavelengths, e.g. multi-spectrum radiation detection devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/289—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being transparent or semi-transparent devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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JP2016505870A 2013-04-05 2014-03-28 携帯デバイス用透明光検出素子 Active JP6121615B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/857,484 2013-04-05
US13/857,484 US9130085B2 (en) 2013-04-05 2013-04-05 Transparent photodetector for mobile devices
PCT/FI2014/050228 WO2014162055A1 (en) 2013-04-05 2014-03-28 Transparent photodetector for mobile devices

Publications (3)

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JP2016520438A JP2016520438A (ja) 2016-07-14
JP2016520438A5 JP2016520438A5 (enExample) 2017-02-09
JP6121615B2 true JP6121615B2 (ja) 2017-04-26

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US (1) US9130085B2 (enExample)
EP (1) EP2981988B1 (enExample)
JP (1) JP6121615B2 (enExample)
CN (1) CN105264672B (enExample)
WO (1) WO2014162055A1 (enExample)

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CN105633193A (zh) * 2014-10-31 2016-06-01 中国科学院物理研究所 一种响应波长可调的紫外探测器
EP3070741B1 (en) 2015-03-18 2020-07-29 Emberion Oy An apparatus comprising a sensor arrangemenet and associated fabrication method
US10437329B2 (en) 2015-08-03 2019-10-08 Fundació Institut De Ciències Fotòniques Gaze tracking apparatus
EP3128742B1 (en) 2015-08-03 2018-05-16 Fundació Institut de Ciències Fotòniques Image sensor with non-local readout circuit and optoelectronic device comprising said image sensor
EP3136445B1 (en) * 2015-08-25 2021-03-17 Emberion Oy A method for forming apparatus comprising two dimensional material
EP3136443A1 (en) * 2015-08-28 2017-03-01 Nokia Technologies Oy A method for forming apparatus comprising two dimensional material
EP3163325B1 (en) * 2015-10-28 2020-02-12 Nokia Technologies Oy An apparatus and associated methods for computed tomography
JP6641904B2 (ja) * 2015-11-09 2020-02-05 株式会社豊田中央研究所 光センサ
ES2739176T3 (es) * 2015-11-30 2020-01-29 Emberion Oy Aparato fotodetector de puntos cuánticos y procedimientos asociados
EP3190632B1 (en) * 2016-01-11 2021-05-05 Nokia Technologies Oy A composite nanoparticle and photodetector comprising the nanoparticle
EP3214656B1 (en) 2016-03-04 2019-01-09 Nokia Technologies Oy A quantum dot photodetector apparatus and associated methods
EP3231768A1 (en) 2016-04-13 2017-10-18 Nokia Technologies Oy An apparatus and method comprising a two dimensional channel material and an electrode comprising a conductive material with a coating of a two-dimensional material
EP3242333B1 (en) * 2016-05-03 2020-09-09 Nokia Technologies Oy An apparatus and method of forming an apparatus comprising a graphene field effect transistor
EP3252831B1 (en) 2016-06-02 2021-01-13 Emberion Oy A quantum dot photodetector apparatus and associated methods
CN106384756B (zh) * 2016-10-19 2017-10-13 中国人民解放军国防科学技术大学 基于石墨烯量子点的THz单光子探测器及其制备方法
EP3340492B1 (en) * 2016-12-23 2019-10-30 Vestel Elektronik Sanayi ve Ticaret A.S. Visible light communication using colour shift keying
KR102356684B1 (ko) * 2017-01-10 2022-01-28 삼성전자주식회사 그래핀 양자점을 포함하는 광센서 및 이미지 센서
GB2568110B (en) * 2017-11-07 2019-12-04 Emberion Oy Photosensitive field-effect transistor
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US11056602B2 (en) 2019-06-20 2021-07-06 United States Of America As Represented By The Secretary Of The Navy Device, system, and method for selectively tuning nanoparticles with graphene
JP7527768B2 (ja) * 2019-09-11 2024-08-05 一般財団法人電力中央研究所 フォトトランジスタおよび電子機器
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JP7173074B2 (ja) * 2020-03-17 2022-11-16 株式会社豊田中央研究所 光検出器
CN112086529A (zh) * 2020-08-24 2020-12-15 中国科学院长春光学精密机械与物理研究所 一种多色柔性光电探测器及其制备方法

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Publication number Publication date
CN105264672A (zh) 2016-01-20
EP2981988B1 (en) 2022-02-16
EP2981988A4 (en) 2017-01-18
JP2016520438A (ja) 2016-07-14
US9130085B2 (en) 2015-09-08
CN105264672B (zh) 2017-05-31
WO2014162055A1 (en) 2014-10-09
US20140299741A1 (en) 2014-10-09
EP2981988A1 (en) 2016-02-10

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