JP6120075B2 - 固体撮像装置および固体撮像装置の製造方法。 - Google Patents

固体撮像装置および固体撮像装置の製造方法。 Download PDF

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Publication number
JP6120075B2
JP6120075B2 JP2013150480A JP2013150480A JP6120075B2 JP 6120075 B2 JP6120075 B2 JP 6120075B2 JP 2013150480 A JP2013150480 A JP 2013150480A JP 2013150480 A JP2013150480 A JP 2013150480A JP 6120075 B2 JP6120075 B2 JP 6120075B2
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Prior art keywords
optical film
film layer
solid
sealing resin
chip
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Expired - Fee Related
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JP2013150480A
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Japanese (ja)
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JP2015023163A5 (enExample
JP2015023163A (ja
Inventor
前原　正孝
正孝 前原
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Sony Corp
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Sony Corp
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Priority to JP2013150480A priority Critical patent/JP6120075B2/ja
Priority to CN201410331473.XA priority patent/CN104299945A/zh
Priority to US14/330,270 priority patent/US9461082B2/en
Publication of JP2015023163A publication Critical patent/JP2015023163A/ja
Publication of JP2015023163A5 publication Critical patent/JP2015023163A5/ja
Priority to US15/260,821 priority patent/US10461111B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
JP2013150480A 2013-07-19 2013-07-19 固体撮像装置および固体撮像装置の製造方法。 Expired - Fee Related JP6120075B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2013150480A JP6120075B2 (ja) 2013-07-19 2013-07-19 固体撮像装置および固体撮像装置の製造方法。
CN201410331473.XA CN104299945A (zh) 2013-07-19 2014-07-11 固态成像设备及其制造方法
US14/330,270 US9461082B2 (en) 2013-07-19 2014-07-14 Solid state imaging apparatus and method of producing the same
US15/260,821 US10461111B2 (en) 2013-07-19 2016-09-09 Solid state imaging apparatus and method of producing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013150480A JP6120075B2 (ja) 2013-07-19 2013-07-19 固体撮像装置および固体撮像装置の製造方法。

Publications (3)

Publication Number Publication Date
JP2015023163A JP2015023163A (ja) 2015-02-02
JP2015023163A5 JP2015023163A5 (enExample) 2016-03-17
JP6120075B2 true JP6120075B2 (ja) 2017-04-26

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JP2013150480A Expired - Fee Related JP6120075B2 (ja) 2013-07-19 2013-07-19 固体撮像装置および固体撮像装置の製造方法。

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Country Link
US (2) US9461082B2 (enExample)
JP (1) JP6120075B2 (enExample)
CN (1) CN104299945A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6295983B2 (ja) * 2015-03-05 2018-03-20 ソニー株式会社 半導体装置およびその製造方法、並びに電子機器
JP2018011018A (ja) * 2016-07-15 2018-01-18 ソニー株式会社 固体撮像素子および製造方法、並びに電子機器
WO2018074581A1 (ja) * 2016-10-21 2018-04-26 ソニーセミコンダクタソリューションズ株式会社 電子基板、および電子装置
US11676929B2 (en) 2016-10-21 2023-06-13 Sony Semiconductor Solutions Corporation Electronic substrate and electronic apparatus
US11217615B2 (en) 2017-01-30 2022-01-04 Sony Semiconductor Solutions Corporation Imaging element, fabrication method, and electronic equipment
JP7060835B2 (ja) * 2017-09-26 2022-04-27 カシオ計算機株式会社 回路基板、電子機器、および回路基板の製造方法
US11770627B1 (en) 2019-10-04 2023-09-26 Ball Aerospace & Technologies Corp. Systems and methods for direct measurement of photon arrival rate
EP3911132B1 (en) * 2020-05-12 2024-07-03 AT & S Austria Technologie & Systemtechnik Aktiengesellschaft Component carrier with a solid body protecting a component carrier hole from foreign material ingression

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002124654A (ja) * 2000-10-13 2002-04-26 Mitsubishi Electric Corp 固体撮像装置
JP2003234362A (ja) * 2002-02-12 2003-08-22 Yokogawa Electric Corp 半導体装置
US7122874B2 (en) * 2004-04-12 2006-10-17 Optopac, Inc. Electronic package having a sealing structure on predetermined area, and the method thereof
JP2007067317A (ja) 2005-09-02 2007-03-15 Seiko Epson Corp 半導体装置の実装構造、及び半導体装置の実装方法
JP2009239258A (ja) * 2008-03-05 2009-10-15 Panasonic Corp 光学デバイス及びその製造方法
JP2009251249A (ja) * 2008-04-04 2009-10-29 Sharp Corp ウエハ状光学装置およびその製造方法、電子素子ウエハモジュール、センサウエハモジュール、電子素子モジュール、センサモジュール、電子情報機器
US8426959B2 (en) * 2009-08-19 2013-04-23 Samsung Electronics Co., Ltd. Semiconductor package and method of manufacturing the same
JP2011054794A (ja) * 2009-09-02 2011-03-17 Panasonic Corp 光学デバイス及びその製造方法
JP2011243612A (ja) * 2010-05-14 2011-12-01 Sony Corp 半導体装置及びその製造方法並びに電子機器
JP5924017B2 (ja) * 2011-02-16 2016-05-25 株式会社リコー 可逆性感熱記録媒体及びその製造方法

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Publication number Publication date
CN104299945A (zh) 2015-01-21
JP2015023163A (ja) 2015-02-02
US20150021729A1 (en) 2015-01-22
US20170012073A1 (en) 2017-01-12
US10461111B2 (en) 2019-10-29
US9461082B2 (en) 2016-10-04

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