JP6099372B2 - 半導体装置及び電子機器 - Google Patents

半導体装置及び電子機器 Download PDF

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Publication number
JP6099372B2
JP6099372B2 JP2012260451A JP2012260451A JP6099372B2 JP 6099372 B2 JP6099372 B2 JP 6099372B2 JP 2012260451 A JP2012260451 A JP 2012260451A JP 2012260451 A JP2012260451 A JP 2012260451A JP 6099372 B2 JP6099372 B2 JP 6099372B2
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Prior art keywords
transistor
wiring
potential
signal
gate
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Japanese (ja)
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JP2013140340A (ja
JP2013140340A5 (enExample
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敦司 梅崎
敦司 梅崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2012260451A priority Critical patent/JP6099372B2/ja
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Publication of JP2013140340A5 publication Critical patent/JP2013140340A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/813—Combinations of field-effect devices and capacitor only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/471—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different architectures, e.g. having both top-gate and bottom-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264—Details of driving circuits
    • G09G2310/0267—Details of drivers for scan electrodes, other than drivers for liquid crystal, plasma or OLED displays
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264—Details of driving circuits
    • G09G2310/0286—Details of a shift registers arranged for use in a driving circuit
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/04—Maintaining the quality of display appearance
    • G09G2320/043—Preventing or counteracting the effects of ageing
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3266—Details of drivers for scan electrodes

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Shift Register Type Memory (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Control Of El Displays (AREA)
  • Liquid Crystal Display Device Control (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electronic Switches (AREA)
JP2012260451A 2011-12-05 2012-11-29 半導体装置及び電子機器 Active JP6099372B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012260451A JP6099372B2 (ja) 2011-12-05 2012-11-29 半導体装置及び電子機器

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011265799 2011-12-05
JP2011265799 2011-12-05
JP2012260451A JP6099372B2 (ja) 2011-12-05 2012-11-29 半導体装置及び電子機器

Related Child Applications (1)

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JP2017029767A Division JP2017139049A (ja) 2011-12-05 2017-02-21 半導体装置

Publications (3)

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JP2013140340A JP2013140340A (ja) 2013-07-18
JP2013140340A5 JP2013140340A5 (enExample) 2016-01-21
JP6099372B2 true JP6099372B2 (ja) 2017-03-22

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JP2012260451A Active JP6099372B2 (ja) 2011-12-05 2012-11-29 半導体装置及び電子機器
JP2017029767A Withdrawn JP2017139049A (ja) 2011-12-05 2017-02-21 半導体装置
JP2019012730A Withdrawn JP2019106230A (ja) 2011-12-05 2019-01-29 半導体装置
JP2021018144A Active JP7048779B2 (ja) 2011-12-05 2021-02-08 半導体装置
JP2022048367A Active JP7238188B2 (ja) 2011-12-05 2022-03-24 半導体装置
JP2023030780A Active JP7457178B2 (ja) 2011-12-05 2023-03-01 半導体装置
JP2024039960A Active JP7631584B2 (ja) 2011-12-05 2024-03-14 半導体装置
JP2025017403A Pending JP2025065292A (ja) 2011-12-05 2025-02-05 半導体装置

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JP2017029767A Withdrawn JP2017139049A (ja) 2011-12-05 2017-02-21 半導体装置
JP2019012730A Withdrawn JP2019106230A (ja) 2011-12-05 2019-01-29 半導体装置
JP2021018144A Active JP7048779B2 (ja) 2011-12-05 2021-02-08 半導体装置
JP2022048367A Active JP7238188B2 (ja) 2011-12-05 2022-03-24 半導体装置
JP2023030780A Active JP7457178B2 (ja) 2011-12-05 2023-03-01 半導体装置
JP2024039960A Active JP7631584B2 (ja) 2011-12-05 2024-03-14 半導体装置
JP2025017403A Pending JP2025065292A (ja) 2011-12-05 2025-02-05 半導体装置

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US (2) US8872299B2 (enExample)
JP (8) JP6099372B2 (enExample)

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JP6475424B2 (ja) 2013-06-05 2019-02-27 株式会社半導体エネルギー研究所 半導体装置
CN105590601B (zh) * 2015-12-18 2018-06-26 上海中航光电子有限公司 驱动电路、阵列基板及显示装置
CN107958656B (zh) * 2018-01-08 2019-07-02 武汉华星光电技术有限公司 Goa电路
JP2020202613A (ja) 2019-06-06 2020-12-17 国立大学法人 東京大学 静電型デバイスおよび静電型デバイス製造方法

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