JP6072478B2 - 磁気抵抗素子の製造方法 - Google Patents

磁気抵抗素子の製造方法 Download PDF

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JP6072478B2
JP6072478B2 JP2012196733A JP2012196733A JP6072478B2 JP 6072478 B2 JP6072478 B2 JP 6072478B2 JP 2012196733 A JP2012196733 A JP 2012196733A JP 2012196733 A JP2012196733 A JP 2012196733A JP 6072478 B2 JP6072478 B2 JP 6072478B2
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film
barrier layer
magnetic film
magnetic
etched
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Japanese (ja)
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JP2014053438A (ja
JP2014053438A5 (enExample
Inventor
芳文 小川
芳文 小川
松本　英治
英治 松本
伊澤　勝
勝 伊澤
望 松崎
望 松崎
酒井　哲
哲 酒井
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
JP2012196733A 2012-09-07 2012-09-07 磁気抵抗素子の製造方法 Expired - Fee Related JP6072478B2 (ja)

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JP2012196733A JP6072478B2 (ja) 2012-09-07 2012-09-07 磁気抵抗素子の製造方法

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JP2012196733A JP6072478B2 (ja) 2012-09-07 2012-09-07 磁気抵抗素子の製造方法

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JP2014053438A JP2014053438A (ja) 2014-03-20
JP2014053438A5 JP2014053438A5 (enExample) 2015-03-19
JP6072478B2 true JP6072478B2 (ja) 2017-02-01

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Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102557397B1 (ko) * 2015-05-14 2023-07-19 삼성전자주식회사 흡수 층들을 이용한 다중 단계 원소 제거

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6445554B1 (en) * 2000-03-10 2002-09-03 Read-Rite Corporation Method and system for providing edge-junction TMR for high areal density magnetic recording
US6653154B2 (en) * 2001-03-15 2003-11-25 Micron Technology, Inc. Method of forming self-aligned, trenchless mangetoresistive random-access memory (MRAM) structure with sidewall containment of MRAM structure
WO2008120320A1 (ja) * 2007-03-28 2008-10-09 Fujitsu Limited 薄膜磁気ヘッド及びその製造方法ならびに磁気記録装置
JP2009224477A (ja) * 2008-03-14 2009-10-01 Fujitsu Ltd 半導体記憶装置及びその製造方法

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