JP6049121B2 - 機能性材料、電子デバイス、電磁波吸収／遮蔽デバイス及びそれらの製造方法 - Google Patents

機能性材料、電子デバイス、電磁波吸収／遮蔽デバイス及びそれらの製造方法 Download PDF

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JP6049121B2
JP6049121B2 JP2012002034A JP2012002034A JP6049121B2 JP 6049121 B2 JP6049121 B2 JP 6049121B2 JP 2012002034 A JP2012002034 A JP 2012002034A JP 2012002034 A JP2012002034 A JP 2012002034A JP 6049121 B2 JP6049121 B2 JP 6049121B2
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metal
functional material
alloy
alloy particles
particles
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JP2013143216A (ja
JP2013143216A5 (enrdf_load_stackoverflow
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重信 関根
重信 関根
由莉奈 関根
由莉奈 関根
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有限会社 ナプラ
有限会社 ナプラ
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Parts Printed On Printed Circuit Boards (AREA)
  • Powder Metallurgy (AREA)
  • Manufacture Of Alloys Or Alloy Compounds (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Conductive Materials (AREA)
JP2012002034A 2012-01-10 2012-01-10 機能性材料、電子デバイス、電磁波吸収／遮蔽デバイス及びそれらの製造方法 Active JP6049121B2 (ja)

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JP2012002034A JP6049121B2 (ja) 2012-01-10 2012-01-10 機能性材料、電子デバイス、電磁波吸収／遮蔽デバイス及びそれらの製造方法

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JP2012002034A JP6049121B2 (ja) 2012-01-10 2012-01-10 機能性材料、電子デバイス、電磁波吸収／遮蔽デバイス及びそれらの製造方法

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JP2013143216A JP2013143216A (ja) 2013-07-22
JP2013143216A5 JP2013143216A5 (enrdf_load_stackoverflow) 2014-12-18
JP6049121B2 true JP6049121B2 (ja) 2016-12-21

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11011473B2 (en) 2018-12-17 2021-05-18 Samsung Electronics Co., Ltd. Semiconductor package

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5885351B2 (ja) * 2013-10-09 2016-03-15 有限会社 ナプラ 接合部及び電気配線
JP6038270B1 (ja) * 2015-12-22 2016-12-07 有限会社 ナプラ 電子装置
JP7487471B2 (ja) * 2019-12-13 2024-05-21 株式会社レゾナック 金属ペースト、導電体、並びに、貫通電極を有する基体及びその製造方法

Family Cites Families (9)

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Publication number Priority date Publication date Assignee Title
WO2002035554A1 (en) * 2000-10-25 2002-05-02 Harima Chemicals, Inc. Electroconductive metal paste and method for production thereof
JP4255847B2 (ja) * 2004-01-27 2009-04-15 田中貴金属工業株式会社 金属ペーストを用いた半導体ウェハーへのバンプの形成方法
JP2007173131A (ja) * 2005-12-26 2007-07-05 Hitachi Ltd 微粒子分散液、およびそれを用いた導電パターン形成装置
JP5212462B2 (ja) * 2008-03-07 2013-06-19 富士通株式会社 導電材料、導電ペースト、回路基板、及び半導体装置
JP2010161331A (ja) * 2008-12-12 2010-07-22 Hitachi Ltd 電極，電極ペースト及びそれを用いた電子部品
JP4563506B1 (ja) * 2010-01-13 2010-10-13 有限会社ナプラ 電極材料
JP2011021255A (ja) * 2009-07-16 2011-02-03 Applied Nanoparticle Laboratory Corp ３金属成分型複合ナノ金属ペースト、接合方法及び電子部品
JP5660426B2 (ja) * 2010-03-17 2015-01-28 独立行政法人情報通信研究機構 無線通信システム
JP5750259B2 (ja) * 2010-11-30 2015-07-15 ハリマ化成株式会社 導電性金属ペースト

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11011473B2 (en) 2018-12-17 2021-05-18 Samsung Electronics Co., Ltd. Semiconductor package

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