JP6047573B2 - 放射源 - Google Patents
放射源 Download PDFInfo
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- JP6047573B2 JP6047573B2 JP2014527556A JP2014527556A JP6047573B2 JP 6047573 B2 JP6047573 B2 JP 6047573B2 JP 2014527556 A JP2014527556 A JP 2014527556A JP 2014527556 A JP2014527556 A JP 2014527556A JP 6047573 B2 JP6047573 B2 JP 6047573B2
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- 230000005855 radiation Effects 0.000 title claims description 126
- 230000003287 optical effect Effects 0.000 claims description 66
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- 238000000059 patterning Methods 0.000 claims description 25
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- 238000005286 illumination Methods 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 5
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- 238000001459 lithography Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
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- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
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- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/008—X-ray radiation generated from plasma involving a beam of energy, e.g. laser or electron beam in the process of exciting the plasma
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70025—Production of exposure light, i.e. light sources by lasers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
- H01S3/2308—Amplifier arrangements, e.g. MOPA
- H01S3/2316—Cascaded amplifiers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
- H01S3/2308—Amplifier arrangements, e.g. MOPA
- H01S3/2325—Multi-pass amplifiers, e.g. regenerative amplifiers
- H01S3/2333—Double-pass amplifiers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
- H05G2/005—X-ray radiation generated from plasma being produced from a liquid or gas containing a metal as principal radiation generating component
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
- G02B27/283—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising used for beam splitting or combining
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
- H01S3/0064—Anti-reflection devices, e.g. optical isolaters
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Lasers (AREA)
- X-Ray Techniques (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
[0001] 本出願は、参照によりその全体が本明細書に組み込まれる2011年9月2日に出願の米国特許仮出願第61/530,782号の利益を主張する。
Claims (9)
- 放射源であって、
燃料小滴の流れを軌道に沿ってプラズマ形成位置に向けて誘導するノズルと、
前記プラズマ形成位置にある燃料小滴にレーザ放射を誘導して、使用中、放射生成プラズマを生成するレーザと、を備え、
前記レーザは、
シードレーザビームを提供するシードレーザと、
前記シードレーザから前記シードレーザビームを受けるビームスプリッタと、
前記ビームスプリッタから前記シードレーザビームを受けて、増幅されたシードレーザビームを提供する光前置増幅器と、
増幅された前記シードレーザビームを受け、増幅された前記シードレーザビームを前記光前置増幅器を介して前記ビームスプリッタに向けて誘導し、二度増幅されたシードレーザビームを提供する第1リフレクタと、
前記ビームスプリッタを介して二度増幅された前記シードレーザビームを受け、さらなる光増幅器の一度の通過で二度増幅された前記シードレーザビームをさらに増幅し、前記レーザビームを生成するさらなる光増幅器と、
第2リフレクタであって、プラズマ内に燃料小滴を向けるための前記放射源の動作使用時に前記燃料小滴は前記第2リフレクタとして機能し、前記さらなる光増幅器から前記レーザビームを受け、前記レーザビームの少なくとも一部分を前記さらなる光増幅器に向けて戻すように誘導する第2リフレクタと、を備える、放射源。 - 前記ビームスプリッタは、偏光する又は偏光されたビームスプリッタである、請求項1に記載の放射源。
- 前記ビームスプリッタと前記第1リフレクタとの間のビームパス内には波長板が配置される、請求項1又は2に記載の放射源。
- 前記波長板は4分の1波長板である、請求項3に記載の放射源。
- 前記ビームスプリッタは、前記シードレーザビームの一部分のみを前記光前置増幅器へと誘導する、請求項1に記載の放射源。
- シードレーザビームを提供するシードレーザと、
前記シードレーザから前記シードレーザビームを受けるビームスプリッタと、
前記ビームスプリッタから前記シードレーザビームを受けて、増幅されたシードレーザビームを提供する光前置増幅器と、
増幅された前記シードレーザビームを受け、増幅された前記シードレーザビームを前記光前置増幅器を介して前記ビームスプリッタに向けて誘導し、二度増幅されたシードレーザビームを提供する第1リフレクタと、
前記ビームスプリッタを介して二度増幅された前記シードレーザビームを受け、さらなる光増幅器の一度の通過で二度増幅された前記シードレーザビームをさらに増幅し、前記レーザビームを生成するさらなる光増幅器と、
第2リフレクタであって、プラズマ内に燃料小滴を向けるための前記放射源の動作使用時に前記燃料小滴は前記第2リフレクタとして機能し、前記さらなる光増幅器から前記レーザビームを受け、前記レーザビームの少なくとも一部分を前記さらなる光増幅器に向けて戻すように誘導する第2リフレクタと、を備える、レーザ。 - 請求項1〜6のいずれかに記載の放射源若しくはレーザを備える、又は、前記放射源若しくはレーザに接続されている、又は、前記放射源若しくはレーザに接続可能な、リソグラフィ装置。
- 放射ビームを提供する照明システムと、前記放射ビームの断面にパターンを付与するパターニングデバイスと、基板を保持する基板ホルダと、前記パターン付き放射ビームを前記基板のターゲット部分上に投影する投影システムと、をさらに備える、請求項7に記載のリソグラフィ装置。
- レーザ放射を生成する方法であって、
シードレーザビームをビームスプリッタに向けて誘導することと、
前記ビームスプリッタを用いて前記シードレーザビームを光前置増幅器へと誘導し、増幅されたシードレーザビームを提供することと、
前記シードレーザビームが前記光前置増幅器を通過した後、増幅された前記シードレーザビームを第1リフレクタから反射させて誘導し、前記光前置増幅器を介して再び前記ビームスプリッタに誘導し、二度増幅されたシードレーザビームを提供することと、
二度増幅された前記シードレーザビームをさらなる光増幅器に一度通過させてさらに増幅し、前記レーザビームを生成することと、
第2リフレクタとして機能する燃料小滴から反射された前記レーザビームの少なくとも一部分をさらなる光増幅器で受けることと、を含む、方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161530782P | 2011-09-02 | 2011-09-02 | |
US61/530,782 | 2011-09-02 | ||
PCT/EP2012/064775 WO2013029895A1 (en) | 2011-09-02 | 2012-07-27 | Radiation source |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2014531704A JP2014531704A (ja) | 2014-11-27 |
JP2014531704A5 JP2014531704A5 (ja) | 2015-09-10 |
JP6047573B2 true JP6047573B2 (ja) | 2016-12-21 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2014527556A Active JP6047573B2 (ja) | 2011-09-02 | 2012-07-27 | 放射源 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9516732B2 (ja) |
JP (1) | JP6047573B2 (ja) |
TW (1) | TWI586222B (ja) |
WO (1) | WO2013029895A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9690379B2 (en) | 1995-11-30 | 2017-06-27 | Immersion Corporation | Tactile feedback interface device |
Families Citing this family (5)
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CN104577685B (zh) * | 2015-01-04 | 2017-10-20 | 中国科学院上海光学精密机械研究所 | 光纤激光双程泵浦1.2μm波段范围激光器 |
WO2016131583A1 (en) | 2015-02-19 | 2016-08-25 | Asml Netherlands B.V. | Radiation source |
US10048199B1 (en) * | 2017-03-20 | 2018-08-14 | Asml Netherlands B.V. | Metrology system for an extreme ultraviolet light source |
US10524345B2 (en) * | 2017-04-28 | 2019-12-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Residual gain monitoring and reduction for EUV drive laser |
JP7239491B2 (ja) * | 2017-05-30 | 2023-03-14 | エーエスエムエル ネザーランズ ビー.ブイ. | 放射源 |
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US5790574A (en) * | 1994-08-24 | 1998-08-04 | Imar Technology Company | Low cost, high average power, high brightness solid state laser |
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FR2871622B1 (fr) | 2004-06-14 | 2008-09-12 | Commissariat Energie Atomique | Dispositif de generation de lumiere dans l'extreme ultraviolet et application a une source de lithographie par rayonnement dans l'extreme ultraviolet |
JP2006172898A (ja) | 2004-12-15 | 2006-06-29 | National Institute Of Advanced Industrial & Technology | レーザープラズマx線発生装置 |
US7308007B2 (en) | 2004-12-23 | 2007-12-11 | Colorado State University Research Foundation | Increased laser output energy and average power at wavelengths below 35 nm |
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-
2012
- 2012-07-27 WO PCT/EP2012/064775 patent/WO2013029895A1/en active Application Filing
- 2012-07-27 US US14/241,986 patent/US9516732B2/en active Active
- 2012-07-27 JP JP2014527556A patent/JP6047573B2/ja active Active
- 2012-08-16 TW TW101129772A patent/TWI586222B/zh active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9690379B2 (en) | 1995-11-30 | 2017-06-27 | Immersion Corporation | Tactile feedback interface device |
Also Published As
Publication number | Publication date |
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US9516732B2 (en) | 2016-12-06 |
TWI586222B (zh) | 2017-06-01 |
JP2014531704A (ja) | 2014-11-27 |
US20140211184A1 (en) | 2014-07-31 |
TW201313074A (zh) | 2013-03-16 |
WO2013029895A1 (en) | 2013-03-07 |
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