US9516732B2 - Radiation source - Google Patents

Radiation source Download PDF

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Publication number
US9516732B2
US9516732B2 US14/241,986 US201214241986A US9516732B2 US 9516732 B2 US9516732 B2 US 9516732B2 US 201214241986 A US201214241986 A US 201214241986A US 9516732 B2 US9516732 B2 US 9516732B2
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seed laser
laser beam
beam splitter
radiation
amplifier
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US20140211184A1 (en
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Christian Wagner
Erik Roelof Loopstra
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ASML Netherlands BV
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ASML Netherlands BV
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2308—Amplifier arrangements, e.g. MOPA
    • H01S3/2316—Cascaded amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2308—Amplifier arrangements, e.g. MOPA
    • H01S3/2325—Multi-pass amplifiers, e.g. regenerative amplifiers
    • H01S3/2333—Double-pass amplifiers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
    • H05G2/005—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state containing a metal as principal radiation generating component
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
    • G02B27/283—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising used for beam splitting or combining
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H01S3/0064—Anti-reflection devices, e.g. optical isolaters

Definitions

  • the present invention relates to a radiation source, suitable for use in conjunction with, or forming part of, a lithographic apparatus.
  • a lithographic apparatus is a machine that applies a desired pattern onto a substrate, usually onto a target portion of the substrate.
  • a lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs).
  • a patterning device which is alternatively referred to as a mask or a reticle, may be used to generate a circuit pattern to be formed on an individual layer of the IC.
  • This pattern can be transferred onto a target portion (e.g., comprising part of, one, or several dies) on a substrate (e.g., a silicon wafer). Transfer of the pattern is typically via imaging onto a layer of radiation-sensitive material (resist) provided on the substrate.
  • a single substrate will contain a network of adjacent target portions that are successively patterned.
  • Lithography is widely recognized as one of the key steps in the manufacture of ICs and other devices and/or structures. However, as the dimensions of features made using lithography become smaller, lithography is becoming a more critical factor for enabling miniature IC or other devices and/or structures to be manufactured.
  • ⁇ is the wavelength of the radiation used
  • NA is the numerical aperture of the projection system used to print the pattern
  • k1 is a process dependent adjustment factor, also called the Rayleigh constant
  • CD is the feature size (or critical dimension) of the printed feature. It follows from equation (1) that reduction of the minimum printable size of features can be obtained in three ways: by shortening the exposure wavelength ⁇ , by increasing the numerical aperture NA or by decreasing the value of k1.
  • EUV radiation is electromagnetic radiation having a wavelength within the range of 5-20 nm, for example within the range of 13-14 nm. It has further been proposed that EUV radiation with a wavelength of less than 10 nm could be used, for example within the range of 5-10 nm such as 6.7 nm or 6.8 nm. Such radiation is termed extreme ultraviolet radiation or soft x-ray radiation. Possible sources include, for example, laser-produced plasma sources, discharge plasma sources, or sources based on synchrotron radiation provided by an electron storage ring.
  • EUV radiation may be produced using a plasma.
  • a radiation system for producing EUV radiation may include a laser for exciting a fuel to provide the plasma, and a source collector module for containing the plasma.
  • the plasma may be created, for example, by directing a laser beam at a fuel, such as particles (i.e., droplets) of a suitable fuel material (e.g., tin, which is currently thought to be the most promising and thus likely choice of fuel for EUV radiation sources), or a stream of a suitable gas or vapor, such as Xe gas or Li vapor.
  • the resulting plasma emits output radiation, e.g., EUV radiation, which is collected using a radiation collector.
  • the radiation collector may be a mirrored normal incidence radiation collector, which receives the radiation and focuses the radiation into a beam.
  • the source collector module may include an enclosing structure or chamber arranged to provide a vacuum environment to support the plasma.
  • a radiation system is typically termed a laser produced plasma (LPP) source.
  • LPP laser produced plasma
  • radiation may be generated by a plasma formed by the use of an electrical discharge—a discharge produced plasma (DPP) source.
  • DPP discharge produced plasma
  • a proposed EUV LPP radiation source comprises a seed laser.
  • the seed laser directs a seed laser beam in to and through one or more optical amplifiers (e.g., a high gain or pre-amplifier, followed by one or more power amplifiers).
  • the amplified laser radiation is then directed toward and is incident on a fuel droplet.
  • the amplified laser radiation is used to, for example, at least partially vaporise the fuel droplet to generate EUV radiation.
  • a portion of the amplified laser radiation might reflect off the fuel droplet and back along the same initial beam path towards the seed laser.
  • This return beam may be amplified by the optical amplifiers on its way back to the seed laser, which could result in an amplified laser beam being incident on the seed laser itself. This can cause damage to the seed laser.
  • a radiation source comprising: a nozzle configured to direct a stream of fuel droplets along a trajectory towards a plasma formation location; a laser configured to direct laser radiation at a fuel droplet at the plasma formation location to generate, in use, a radiation generating plasma; wherein the laser comprises: a seed laser for providing a seed laser beam; a beam splitter for receiving the seed laser beam from the seed laser; an optical amplifier for receiving the seed laser beam from the beam splitter and performing optical amplification; a first reflector located downstream of the optical amplifier, configured to direct the seed laser beam back through the optical amplifier and on to the beam splitter; and a second reflector located further downstream of the beam splitter, configured to receive the seed laser beam from the beam splitter and to direct at least a portion of the seed laser beam back toward the beam splitter.
  • the beam splitter may be a polarizing or polarized beam splitter.
  • a wave plate may be located in a beam path between the beam splitter and the first reflector.
  • the wave plate may be a quarter wave plate.
  • the wave plate might be configured to ensure that a polarization state of radiation is changed (i.e., rotated) by 90° after passing through the wave plate twice.
  • the beam splitter may be arranged to direct only a minor portion of the seed laser beam to the optical amplifier (e.g., 10%). A major portion (e.g., 90%) may be directed elsewhere, for example to a beam dump or the like.
  • the second reflector may be a fuel droplet.
  • the optical amplifier may be a high gain amplifier, or a pre-amplifier (or at least the amplifier with the highest gain if more than one amplifier is used in the amplification process).
  • One or more further optical amplifiers may be located in a beam path and between the beam splitter and the second reflector.
  • a laser comprising: a seed laser for providing a seed laser beam; a beam splitter for receiving the seed laser beam from the seed laser; an optical amplifier for receiving the seed laser beam from the beam splitter and performing optical amplification; a first reflector located downstream of the optical amplifier, configured to direct the seed laser beam back through the optical amplifier and on to the beam splitter; and a second reflector located further downstream of the beam splitter, configured to receive the seed laser beam from the beam splitter and to direct at least a portion of the seed laser beam back toward the beam splitter.
  • One or more of any amplifiers described herein may be pumped and/or triggered by the seed laser. Alternatively or additionally, one or more amplifiers may be pumped in to an excited (or amplification) state by one or more other schemes, for example by use of electrical input or the like.
  • a lithographic apparatus comprising, being in connection with, or connectable to, a radiation source or laser of another aspect of this invention.
  • the lithographic apparatus may further comprise an illumination system for providing a radiation beam; a patterning device for imparting the radiation beam with a pattern in its cross-section; a substrate holder for holding a substrate; and a projection system for projecting the patterned radiation beam onto a target portion of the substrate.
  • a method of generating laser radiation comprising: directing a seed laser beam toward a beam splitter; the seed laser beam being directed by the beam splitter to an optical amplifier for optical amplification; after the seed laser beam has passed through the optical amplifier, directing the seed laser beam back though the optical amplifier for optical amplification, and then on to the beam splitter; the beam splitter directing the seed laser beam downstream, where at least a portion of the seed laser beam is then directed back toward the beam splitter.
  • the amplifiers may sometimes be referred to as cavities.
  • FIG. 1 depicts a lithographic apparatus according to an embodiment of the invention
  • FIG. 2 is a more detailed view of the apparatus of FIG. 1 , including an LPP source collector module;
  • FIG. 3 schematically depicts a laser suitable for use as a part of the radiation source shown in and described with reference to FIGS. 1 and 2 ;
  • FIG. 4 schematically depicts an overview of a laser according to an embodiment of the present invention, suitable for use as part of the radiation source as shown in and described with reference to FIGS. 1 and 2 ;
  • FIG. 5 schematically depicts a laser according to a first embodiment of the present invention.
  • FIG. 6 schematically depicts a laser according to a second embodiment of the present invention.
  • FIG. 1 schematically depicts a lithographic apparatus LAP including a source collector module SO according to an embodiment of the invention.
  • the apparatus comprises: an illumination system (illuminator) IL configured to condition a radiation beam B (e.g., EUV radiation); a support structure (e.g., a mask table) MT constructed to support a patterning device (e.g., a mask or a reticle) MA and connected to a first positioner PM configured to accurately position the patterning device; a substrate table (e.g., a wafer table) WT constructed to hold a substrate (e.g., a resist-coated wafer) W and connected to a second positioner PW configured to accurately position the substrate; and a projection system (e.g., a reflective projection system) PS configured to project a pattern imparted to the radiation beam B by patterning device MA onto a target portion C (e.g., comprising one or more dies) of the substrate W.
  • a radiation beam B e.
  • the illumination system may include various types of optical components, such as refractive, reflective, magnetic, electromagnetic, electrostatic or other types of optical components, or any combination thereof, for directing, shaping, or controlling radiation.
  • optical components such as refractive, reflective, magnetic, electromagnetic, electrostatic or other types of optical components, or any combination thereof, for directing, shaping, or controlling radiation.
  • the support structure MT holds the patterning device MA in a manner that depends on the orientation of the patterning device, the design of the lithographic apparatus, and other conditions, such as for example whether or not the patterning device is held in a vacuum environment.
  • the support structure can use mechanical, vacuum, electrostatic or other clamping techniques to hold the patterning device.
  • the support structure may be a frame or a table, for example, which may be fixed or movable as required. The support structure may ensure that the patterning device is at a desired position, for example with respect to the projection system.
  • patterning device should be broadly interpreted as referring to any device that can be used to impart a radiation beam with a pattern in its cross-section such as to create a pattern in a target portion of the substrate.
  • the pattern imparted to the radiation beam may correspond to a particular functional layer in a device being created in the target portion, such as an integrated circuit.
  • the patterning device may be transmissive or reflective.
  • Examples of patterning devices include masks, programmable minor arrays, and programmable LCD panels.
  • Masks are well known in lithography, and include mask types such as binary, alternating phase-shift, and attenuated phase-shift, as well as various hybrid mask types.
  • An example of a programmable minor array employs a matrix arrangement of small minors, each of which can be individually tilted so as to reflect an incoming radiation beam in different directions. The tilted mirrors impart a pattern in a radiation beam that is reflected by the minor matrix.
  • the projection system may include various types of optical components, such as refractive, reflective, magnetic, electromagnetic, electrostatic or other types of optical components, or any combination thereof, as appropriate for the exposure radiation being used, or for other factors such as the use of a vacuum. It may be desired to use a vacuum for EUV radiation since gases may absorb too much radiation. A vacuum environment may therefore be provided to the whole beam path with the aid of a vacuum wall and vacuum pumps.
  • the apparatus is of a reflective type (e.g., employing a reflective mask).
  • the lithographic apparatus may be of a type having two (dual stage) or more substrate tables (and/or two or more mask tables). In such “multiple stage” machines the additional tables may be used in parallel, or preparatory steps may be carried out on one or more tables while one or more other tables are being used for exposure.
  • the illuminator IL receives an extreme ultra violet (EUV) radiation beam from the source collector module SO.
  • EUV extreme ultra violet
  • Methods to produce EUV light include, but are not necessarily limited to, converting a material into a plasma state that has at least one element, e.g., xenon, lithium or tin, with one or more emission lines in the EUV range.
  • the required plasma can be produced by irradiating a fuel, such as a droplet, stream or cluster of material having the required line-emitting element, with a laser beam.
  • the source collector module SO may be part of an EUV radiation system including a laser, not shown in FIG. 1 , for providing the laser beam exciting the fuel.
  • the resulting plasma emits output radiation, e.g., EUV radiation, which is collected using a radiation collector, disposed in the source collector module.
  • output radiation e.g., EUV radiation
  • the laser and the source collector module may be separate entities, for example when a CO 2 laser is used to provide the laser beam for fuel excitation.
  • the laser is not considered to form part of the lithographic apparatus and the radiation beam is passed from the laser to the source collector module with the aid of a beam delivery system comprising, for example, suitable directing mirrors and/or a beam expander.
  • the source may be an integral part of the source collector module, for example when the source is a discharge produced plasma EUV generator, often referred to as a DPP source.
  • the illuminator IL may comprise an adjuster for adjusting the angular intensity distribution of the radiation beam. Generally, at least the outer and/or inner radial extent (commonly referred to as ⁇ -outer and ⁇ -inner, respectively) of the intensity distribution in a pupil plane of the illuminator can be adjusted.
  • the illuminator IL may comprise various other components, such as facetted field and pupil mirror devices. The illuminator may be used to condition the radiation beam, to have a desired uniformity and intensity distribution in its cross-section.
  • the radiation beam B is incident on the patterning device (e.g., mask) MA, which is held on the support structure (e.g., mask table) MT, and is patterned by the patterning device. After being reflected from the patterning device (e.g., mask) MA, the radiation beam B passes through the projection system PS, which focuses the beam onto a target portion C of the substrate W.
  • the substrate table WT can be moved accurately, e.g., so as to position different target portions C in the path of the radiation beam B.
  • the first positioner PM and another position sensor PS 1 can be used to accurately position the patterning device (e.g., mask) MA with respect to the path of the radiation beam B.
  • Patterning device (e.g., mask) MA and substrate W may be aligned using mask alignment marks M 1 , M 2 and substrate alignment marks P 1 , P 2 .
  • the depicted apparatus could be used in at least one of the following modes:
  • step mode the support structure (e.g., mask table) MT and the substrate table WT are kept essentially stationary, while an entire pattern imparted to the radiation beam is projected onto a target portion C at one time (i.e., a single static exposure).
  • the substrate table WT is then shifted in the X and/or Y direction so that a different target portion C can be exposed.
  • the support structure (e.g., mask table) MT and the substrate table WT are scanned synchronously while a pattern imparted to the radiation beam is projected onto a target portion C (i.e., a single dynamic exposure).
  • the velocity and direction of the substrate table WT relative to the support structure (e.g., mask table) MT may be determined by the (de-)magnification and image reversal characteristics of the projection system PS.
  • the support structure (e.g., mask table) MT is kept essentially stationary holding a programmable patterning device, and the substrate table WT is moved or scanned while a pattern imparted to the radiation beam is projected onto a target portion C.
  • a pulsed radiation source is employed and the programmable patterning device is updated as required after each movement of the substrate table WT or in between successive radiation pulses during a scan.
  • This mode of operation can be readily applied to maskless lithography that utilizes programmable patterning device, such as a programmable mirror array of a type as referred to above.
  • FIG. 2 shows the lithographic apparatus LAP in more detail, including the source collector module SO, the illumination system IL, and the projection system PS.
  • the source collector module SO is constructed and arranged such that a vacuum environment can be maintained in an enclosing structure 2 of the source collector module.
  • a laser 4 is arranged to deposit laser energy via a laser beam 6 into a fuel, such as xenon (Xe), tin (Sn) or lithium (Li) that is provided from a fuel supply 8 .
  • a fuel such as xenon (Xe), tin (Sn) or lithium (Li) that is provided from a fuel supply 8 .
  • Tin most likely in the form of droplets
  • the deposition of laser energy into the fuel creates a highly ionized plasma 10 at a plasma formation location 12 that has electron temperatures of several tens of electronvolts (eV).
  • the energetic radiation generated during de-excitation and recombination of these ions is emitted from the plasma 10 , collected and focussed by a near normal incidence radiation collector 14 .
  • a laser 4 and a fuel supply 8 (and/or a collector 14 ) may together be considered to comprise a radiation source, specifically an EUV radiation source.
  • the EUV radiation source may be referred to as a laser produced plasma
  • a second laser (not shown) may be provided, the second laser being configured to preheat the fuel before the laser beam 6 is incident upon it.
  • An LPP source that uses this approach may be referred to as a dual laser pulsing (DLP) source.
  • DLP dual laser pulsing
  • the fuel supply will comprise, or be in connection with, a nozzle configured to direct a stream of fuel droplets along a trajectory towards the plasma formation location 12 .
  • Radiation B that is reflected by the radiation collector 14 is focused at a virtual source point 16 .
  • the virtual source point 16 is commonly referred to as the intermediate focus, and the source collector module SO is arranged such that the intermediate focus 16 is located at or near to an opening 18 in the enclosing structure 2 .
  • the virtual source point 16 is an image of the radiation emitting plasma 10 .
  • the radiation B traverses the illumination system IL, which may include a facetted field mirror device 20 and a facetted pupil mirror device 22 arranged to provide a desired angular distribution of the radiation beam B at the patterning device MA, as well as a desired uniformity of radiation intensity at the patterning device MA.
  • the illumination system IL may include a facetted field mirror device 20 and a facetted pupil mirror device 22 arranged to provide a desired angular distribution of the radiation beam B at the patterning device MA, as well as a desired uniformity of radiation intensity at the patterning device MA.
  • More elements than shown may generally be present in the illumination system IL and projection system PS. Furthermore, there may be more mirrors present than those shown in the figures, for example there may be 1-6 additional reflective elements present in the projection system PS than shown in FIG. 2 .
  • FIG. 3 schematically depicts a laser suitable for use as part of the radiation source described above (e.g., the laser 4 of FIG. 2 ).
  • the laser comprises a seed laser 30 for providing a seed laser beam 32 .
  • the seed laser beam 32 is directed toward and through one or more optical amplifiers 34 , 36 , 38 (e.g., a pre-amplifier or high gain amplifier 34 and one or more power amplifiers 36 , 38 ).
  • the amplified seed laser beam 32 is incident on a fuel droplet 40 . At least partial vaporisation of the fuel droplet 40 may take place in order to generate EUV radiation, as described above.
  • All of the generated laser radiation may not be used to vaporise the fuel droplet 40 . Instead, a portion of the laser radiation 42 may be reflected off the droplet 40 and back along substantially the same initial laser beam path, back toward the optical amplifiers 34 , 36 , 38 and the seed laser 30 itself. When directed in this manner, the reflected and thus returning beam may again be amplified before being incident on the seed laser 30 . In particular, significant amplification may take place in the high-gain amplifier or pre-amplifier 34 .
  • a laser is provided.
  • the laser comprises a seed laser for providing a seed laser beam.
  • a beam splitter is provided for receiving the seed laser beam from the seed laser.
  • the beam splitter directs (e.g., by transmission or reflection, where appropriate) the seed laser beam towards an optical amplifier for optical amplification (e.g., a high gain amplifier or pre-amplifier, as described above).
  • a first reflector e.g., a mirror or a prism or the like is located downstream of the optical amplifier.
  • the reflector is configured to direct the seed laser beam back through the optical amplifier and onto the beam splitter.
  • the amplifier is substantially “emptied” of excited or elevated electrons, and thus can provide no further gain or amplification of, for example, a returning beam, as will be described in more detail below.
  • the seed laser beam is amplified even more than in the prior art, due to this emptying—the amplification is approximately double, due the emptying of both ends of portions of the amplifier.
  • the seed laser beam is then directed toward and through the beam splitter and on to a second reflector.
  • the second reflector might be a fuel droplet, which may be converted into a radiation generating plasma.
  • the second reflector is configured to receive the seed laser beam from the beam splitter and to direct at least a portion of the seed laser beam (which includes at least a portion thereof) back toward the beam splitter. Even if this return beam passes through the beam splitter, it cannot thereafter be amplified by the optical amplifier referred to above, since this amplifier has been emptied of excited electrons and can provide no further amplification. Such amplification might otherwise result in damage to the seed laser if that beam were to be directed back toward the seed laser itself.
  • FIGS. 4 to 6 An embodiment of the present invention will now be described, by way of example only, with reference to FIGS. 4 to 6 , in which like features have been given the same reference numerals for consistency and clarity.
  • the Figures have not been drawn to any particular scale.
  • FIG. 4 schematically depicts a laser suitable for use as part of the radiation source described above (e.g., the laser 4 of FIG. 2 ).
  • the laser comprises a seed laser 50 for providing a seed laser beam 52 .
  • a beam splitter 54 is provided for receiving the seed laser beam 52 and for directing at least a portion 56 of the seed laser beam toward a main optical amplifier 58 (e.g., a high gain amplifier or pre-amplifier, as discussed above, or at least the amplifier with the highest gain in the laser).
  • Optical amplification takes place within the optical amplifier 58 .
  • a first reflector 60 e.g., a mirror or prism or the like
  • the first reflector 60 is configured to direct the portion of the seed laser beam back through the optical amplifier 58 in substantially the opposite direction to which the portion of the seed laser beam was initially directed.
  • the optical amplifier can be “emptied” of excited electrons, meaning that further gain or amplification cannot take place within the optical amplifier 58 , for example of a return beam (described in more detail below).
  • the beam splitter (possibly in combination with one or more additional components) is configured such that little or no amplified radiation is directed back toward the seed laser 50 , but is instead passed in a different downstream direction.
  • This direction leads to, for instance, further optical amplifiers 64 , 66 (e.g., lower gain power amplifiers) where further amplification may take place, before the amplified laser beam 68 is incident upon a targeted fuel droplet 70 .
  • At least partial vaporisation of the fuel droplet 70 may now take place, allowing EUV radiation to be generated and collected for use as a radiation beam in a lithographic apparatus, for example as described above.
  • the laser beam radiation 68 is used to at least partially vaporise the fuel droplet 70 .
  • a portion 72 of the laser beam radiation may be directed by reflection or the like back along substantially the same initial beam path, through the amplifiers 64 , 66 and toward the beam splitter 54 .
  • the return beam may be substantially prevented from passing through the beam splitter 54 , or may be configured such that only a portion of the return beam 72 can pass through the beam splitter 54 .
  • the beam splitter (and possibly other components) may be appropriately configured or provided to ensure that little or no returned radiation (i.e., radiation reflected off a droplet or, in general, second reflector) is passed back to the seed laser 50 .
  • this may be achieved in one of two ways, described separately and respectively in FIGS. 5 and 6 .
  • the beam splitter is now specifically a polarising or polarised beam splitter 80 that can either polarise the seed laser beam 52 or at least is capable of reflecting radiation having a first polarisation, and substantially transmitting radiation having a second polarisation direction.
  • a wave plate 82 Downstream of the beam splitter 80 is provided a wave plate 82 , located in the beam path between the beam splitter 80 and the first reflector 60 .
  • the wave plate 82 may be a quarter wave plate.
  • the seed laser beam 52 again is directed toward the beam splitter 80 and toward the amplifier 58 (for amplification) and the first reflector 60 .
  • the seed laser beam 52 (or at least the portion 56 thereof) passes through the wave plate 82 , where the polarisation state is changed (for example from linearly polarised to circularly polarised).
  • the portion of the seed laser beam again has its polarisation state changed (e.g., from circularly polarised to linearly polarised), but now the linear polarisation has a different orientation to that initially provided by the beam splitter 80 to radiation received from the seed laser 50 (for example by 90°).
  • the polarisation is such that the seed laser beam passes substantially straight through the beam splitter 80 and, for instance, on to further (and, e.g., lower gain) optical amplifiers 64 , 66 before being incident on the fuel droplet 70 for generation of EUV radiation, as discussed above.
  • any reflected and thus returning radiation 72 should have the same polarisation state as radiation incident on the droplet 70 .
  • This means that the returning radiation 72 may be directed to and through the amplifiers 64 , 66 , and straight through the beam splitter 80 .
  • the direction of polarisation will then be changed again (for example by 90°) after passing twice through the wave plate 82 after reflection off the first reflector 60 , before again being incident on the beam splitter 80 .
  • the polarisation state has changed (e.g., by 90°) the radiation beam is unable to pass through the beam splitter 80 , and is instead reflected by the beam splitter 80 toward the seed laser 50 .
  • any portion of the seed laser beam now being directed back to the seed laser 50 will be small, due to a small amount of reflection off the droplet 70 . Furthermore, and as described above, no amplification of the seed laser beam will have taken place in the main amplifier 58 due to that amplifier having already been “emptied” of excited electrons, thus preventing amplification. Thus, damage to the seed laser 50 is obviated or mitigated.
  • FIG. 6 schematically depicts an alternative embodiment in which a polarised beam splitter does not need to be used.
  • a general beam splitter is used, and specifically a beam splitter 90 that is capable of directing only a minor portion 56 of the seed laser beam 52 to the optical amplifier 58 and, for example, allowing a majority of the seed laser beam 92 to pass through the beam splitter (and, for example, on to a beam dump or the like).
  • a beam splitter 90 that is capable of directing only a minor portion 56 of the seed laser beam 52 to the optical amplifier 58 and, for example, allowing a majority of the seed laser beam 92 to pass through the beam splitter (and, for example, on to a beam dump or the like).
  • one advantage is that no amplification of the return beam 68 is possible within the amplifier 58 due to the amplifier 58 being previously “emptied” of excited electrons, in the manner as described above.
  • Another advantage is that only a minor portion 56 of the seed laser beam is passed back to the beam splitter 90 and that, due to the transmissive properties of the beam splitter 90 , only an even smaller portion of this minor portion is directable back toward the seed laser 50 . For instance, if the beam splitter 90 transmitted 90% of the initial seed laser beam and only reflected 10% for amplification, then only 10% of any return beam (amplified or otherwise) could ever be passed back to the seed laser 50 , thus minimising any damage that could otherwise be caused to the seed laser 50 .
  • the laser has been described in relation to the vaporisation of fuel droplets or the like, one of those fuel droplets forming a second reflector of the laser.
  • a fuel droplet may not be required for use as a second reflector, and a mirror or prism or the like may be the second reflector.
  • beams travelling in different directions have been shown as being separated from one another, or offset from one another—this is for clarity purposes only. In reality, the beams will share the same beam path, or substantially the same beam path.
  • the lasers described herein may be described as master oscillator power amplifier (MOPA) lasers, due to the use of a seed laser to generate a main amplified laser beam.
  • MOPA master oscillator power amplifier
  • lithographic apparatus in the manufacture of ICs
  • the lithographic apparatus described herein may have other applications, such as the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, flat-panel displays, liquid-crystal displays (LCDs), thin-film magnetic heads, etc.
  • LCDs liquid-crystal displays
  • any use of the terms “wafer” or “die” herein may be considered as synonymous with the more general terms “substrate” or “target portion”, respectively.
  • the substrate referred to herein may be processed, before or after exposure, in for example a track (a tool that typically applies a layer of resist to a substrate and develops the exposed resist), a metrology tool and/or an inspection tool. Where applicable, the disclosure herein may be applied to such and other substrate processing tools. Further, the substrate may be processed more than once, for example in order to create a multi-layer IC, so that the term substrate used herein may also refer to a substrate that already contains multiple processed layers.
  • lens may refer to any one or combination of various types of optical components, including refractive, reflective, magnetic, electromagnetic and electrostatic optical components.

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US10686290B2 (en) 2015-02-19 2020-06-16 Asml Netherlands B.V. Radiation source
US10048199B1 (en) * 2017-03-20 2018-08-14 Asml Netherlands B.V. Metrology system for an extreme ultraviolet light source
US20180317308A1 (en) * 2017-04-28 2018-11-01 Taiwan Semiconductor Manufacturing Co., Ltd. Residual Gain Monitoring and Reduction for EUV Drive Laser
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US11737200B2 (en) 2017-04-28 2023-08-22 Taiwan Semiconductor Manufacturing Co., Ltd Residual gain monitoring and reduction for EUV drive laser
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