JP6047573B2 - 放射源 - Google Patents

放射源 Download PDF

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Publication number
JP6047573B2
JP6047573B2 JP2014527556A JP2014527556A JP6047573B2 JP 6047573 B2 JP6047573 B2 JP 6047573B2 JP 2014527556 A JP2014527556 A JP 2014527556A JP 2014527556 A JP2014527556 A JP 2014527556A JP 6047573 B2 JP6047573 B2 JP 6047573B2
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JP
Japan
Prior art keywords
seed laser
laser beam
radiation
amplified
beam splitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
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JP2014527556A
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English (en)
Japanese (ja)
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JP2014531704A5 (enExample
JP2014531704A (ja
Inventor
ワグナー，クリスチャン
ループストラ，エリック
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
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Publication of JP2014531704A publication Critical patent/JP2014531704A/ja
Publication of JP2014531704A5 publication Critical patent/JP2014531704A5/ja
Application granted granted Critical
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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
    • H05G2/0082—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation the energy-carrying beam being a laser beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2308—Amplifier arrangements, e.g. MOPA
    • H01S3/2316—Cascaded amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2308—Amplifier arrangements, e.g. MOPA
    • H01S3/2325—Multi-pass amplifiers, e.g. regenerative amplifiers
    • H01S3/2333—Double-pass amplifiers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
    • G02B27/283—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising used for beam splitting or combining
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H01S3/0064—Anti-reflection devices, e.g. optical isolaters

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lasers (AREA)
  • X-Ray Techniques (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2014527556A 2011-09-02 2012-07-27 放射源 Active JP6047573B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161530782P 2011-09-02 2011-09-02
US61/530,782 2011-09-02
PCT/EP2012/064775 WO2013029895A1 (en) 2011-09-02 2012-07-27 Radiation source

Publications (3)

Publication Number Publication Date
JP2014531704A JP2014531704A (ja) 2014-11-27
JP2014531704A5 JP2014531704A5 (enExample) 2015-09-10
JP6047573B2 true JP6047573B2 (ja) 2016-12-21

Family

ID=46640658

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014527556A Active JP6047573B2 (ja) 2011-09-02 2012-07-27 放射源

Country Status (4)

Country Link
US (1) US9516732B2 (enExample)
JP (1) JP6047573B2 (enExample)
TW (1) TWI586222B (enExample)
WO (1) WO2013029895A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9690379B2 (en) 1995-11-30 2017-06-27 Immersion Corporation Tactile feedback interface device

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104577685B (zh) * 2015-01-04 2017-10-20 中国科学院上海光学精密机械研究所 光纤激光双程泵浦1.2μm波段范围激光器
NL2016111A (en) * 2015-02-19 2016-09-30 Asml Netherlands Bv Radiation Source.
US10048199B1 (en) * 2017-03-20 2018-08-14 Asml Netherlands B.V. Metrology system for an extreme ultraviolet light source
US10524345B2 (en) 2017-04-28 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Residual gain monitoring and reduction for EUV drive laser
CN110692283B (zh) * 2017-05-30 2023-09-19 Asml荷兰有限公司 辐射源
WO2018231344A1 (en) * 2017-06-12 2018-12-20 Uniqarta, Inc. Parallel assembly of discrete components onto a substrate
US12444901B2 (en) * 2020-04-09 2025-10-14 Asml Netherlands B.V. Seed laser system for radiation source

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4194813A (en) * 1978-10-13 1980-03-25 The United States Of America As Represented By The United States Department Of Energy Vacuum aperture isolator for retroreflection from laser-irradiated target
US5790574A (en) * 1994-08-24 1998-08-04 Imar Technology Company Low cost, high average power, high brightness solid state laser
US6999491B2 (en) 1999-10-15 2006-02-14 Jmar Research, Inc. High intensity and high power solid state laser amplifying system and method
US7491954B2 (en) * 2006-10-13 2009-02-17 Cymer, Inc. Drive laser delivery systems for EUV light source
US7372056B2 (en) * 2005-06-29 2008-05-13 Cymer, Inc. LPP EUV plasma source material target delivery system
US7087914B2 (en) 2004-03-17 2006-08-08 Cymer, Inc High repetition rate laser produced plasma EUV light source
FR2871622B1 (fr) 2004-06-14 2008-09-12 Commissariat Energie Atomique Dispositif de generation de lumiere dans l'extreme ultraviolet et application a une source de lithographie par rayonnement dans l'extreme ultraviolet
JP2006172898A (ja) 2004-12-15 2006-06-29 National Institute Of Advanced Industrial & Technology レーザープラズマｘ線発生装置
US7308007B2 (en) 2004-12-23 2007-12-11 Colorado State University Research Foundation Increased laser output energy and average power at wavelengths below 35 nm
CN101002305A (zh) 2005-01-12 2007-07-18 株式会社尼康 激光等离子euv光源、靶材构件、胶带构件、靶材构件的制造方法、靶材的提供方法以及euv曝光装置
JP2006228998A (ja) 2005-02-18 2006-08-31 Komatsu Ltd 極端紫外線光源装置
US7999915B2 (en) 2005-11-01 2011-08-16 Cymer, Inc. Laser system
US7289263B1 (en) 2006-08-02 2007-10-30 Coherent, Inc. Double-pass fiber amplifier
US20080181266A1 (en) 2007-01-26 2008-07-31 Institut National D'optique Enhanced seeded pulsed fiber laser source
NL1036272A1 (nl) * 2007-12-19 2009-06-22 Asml Netherlands Bv Radiation source, lithographic apparatus and device manufacturing method.
US7903697B2 (en) 2008-01-16 2011-03-08 Pyrophotonics Lasers Inc. Method and system for tunable pulsed laser source
US8283643B2 (en) * 2008-11-24 2012-10-09 Cymer, Inc. Systems and methods for drive laser beam delivery in an EUV light source
WO2011066440A1 (en) 2009-11-24 2011-06-03 Applied Energetics Inc. Axial and off axis walk off multi-pass amplifiers
US9113540B2 (en) 2010-02-19 2015-08-18 Gigaphoton Inc. System and method for generating extreme ultraviolet light
JP5722061B2 (ja) 2010-02-19 2015-05-20 ギガフォトン株式会社 極端紫外光源装置及び極端紫外光の発生方法
US8587768B2 (en) * 2010-04-05 2013-11-19 Media Lario S.R.L. EUV collector system with enhanced EUV radiation collection

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9690379B2 (en) 1995-11-30 2017-06-27 Immersion Corporation Tactile feedback interface device

Also Published As

Publication number Publication date
WO2013029895A1 (en) 2013-03-07
JP2014531704A (ja) 2014-11-27
TWI586222B (zh) 2017-06-01
US20140211184A1 (en) 2014-07-31
TW201313074A (zh) 2013-03-16
US9516732B2 (en) 2016-12-06

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