JP6030122B2 - 終点検出のためのスペクトル特徴の適応的追跡 - Google Patents

終点検出のためのスペクトル特徴の適応的追跡 Download PDF

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Publication number
JP6030122B2
JP6030122B2 JP2014506491A JP2014506491A JP6030122B2 JP 6030122 B2 JP6030122 B2 JP 6030122B2 JP 2014506491 A JP2014506491 A JP 2014506491A JP 2014506491 A JP2014506491 A JP 2014506491A JP 6030122 B2 JP6030122 B2 JP 6030122B2
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Prior art keywords
polishing
substrate
sequence
layer
spectrum
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Japanese (ja)
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JP2014512690A (ja
JP2014512690A5 (enExample
Inventor
ジェフリー ドリュー デーヴィッド，
ジェフリー ドリュー デーヴィッド，
ドミニク ジェー． ベンヴェニュ，
ドミニク ジェー． ベンヴェニュ，
ボグスロー エー． スウェデク，
ボグスロー エー． スウェデク，
ハリー キュー． リー，
ハリー キュー． リー，
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Applied Materials Inc
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Applied Materials Inc
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2014506491A 2011-04-20 2012-04-17 終点検出のためのスペクトル特徴の適応的追跡 Active JP6030122B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/090,972 2011-04-20
US13/090,972 US8751033B2 (en) 2008-11-14 2011-04-20 Adaptive tracking spectrum features for endpoint detection
PCT/US2012/033969 WO2012145336A2 (en) 2011-04-20 2012-04-17 Adaptively tracking spectrum features for endpoint detection

Publications (3)

Publication Number Publication Date
JP2014512690A JP2014512690A (ja) 2014-05-22
JP2014512690A5 JP2014512690A5 (enExample) 2015-06-11
JP6030122B2 true JP6030122B2 (ja) 2016-11-24

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Family Applications (1)

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JP2014506491A Active JP6030122B2 (ja) 2011-04-20 2012-04-17 終点検出のためのスペクトル特徴の適応的追跡

Country Status (4)

Country Link
US (1) US8751033B2 (enExample)
JP (1) JP6030122B2 (enExample)
KR (1) KR101929072B1 (enExample)
WO (1) WO2012145336A2 (enExample)

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US20120034844A1 (en) * 2010-08-05 2012-02-09 Applied Materials, Inc. Spectrographic monitoring using index tracking after detection of layer clearing
US8694144B2 (en) 2010-08-30 2014-04-08 Applied Materials, Inc. Endpoint control of multiple substrates of varying thickness on the same platen in chemical mechanical polishing
US9358660B2 (en) * 2011-11-07 2016-06-07 Taiwan Semiconductor Manufacturing Company, Ltd. Grinding wheel design with elongated teeth arrangement
US9960088B2 (en) 2011-11-07 2018-05-01 Taiwan Semiconductor Manufacturing Company, Ltd. End point detection in grinding
US8563335B1 (en) 2012-04-23 2013-10-22 Applied Materials, Inc. Method of controlling polishing using in-situ optical monitoring and fourier transform
US9168630B2 (en) * 2012-04-23 2015-10-27 Applied Materials, Inc. User-input functions for data sequences in polishing endpoint detection
US9011202B2 (en) * 2012-04-25 2015-04-21 Applied Materials, Inc. Fitting of optical model with diffraction effects to measured spectrum
US9289875B2 (en) 2012-04-25 2016-03-22 Applied Materials, Inc. Feed forward and feed-back techniques for in-situ process control
US9296084B2 (en) * 2012-07-19 2016-03-29 Applied Materials, Inc. Polishing control using weighting with default sequence
US20140030956A1 (en) * 2012-07-25 2014-01-30 Jimin Zhang Control of polishing of multiple substrates on the same platen in chemical mechanical polishing
US9221147B2 (en) * 2012-10-23 2015-12-29 Applied Materials, Inc. Endpointing with selective spectral monitoring
US9482610B2 (en) * 2012-11-12 2016-11-01 Applied Materials, Inc. Techniques for matching spectra
US20140141696A1 (en) 2012-11-21 2014-05-22 Applied Materials, Inc. Polishing System with In-Sequence Sensor
US9056383B2 (en) * 2013-02-26 2015-06-16 Applied Materials, Inc. Path for probe of spectrographic metrology system
US8992286B2 (en) 2013-02-26 2015-03-31 Applied Materials, Inc. Weighted regression of thickness maps from spectral data
TWI635929B (zh) * 2013-07-11 2018-09-21 日商荏原製作所股份有限公司 研磨裝置及研磨狀態監視方法
JP6275421B2 (ja) * 2013-09-06 2018-02-07 株式会社荏原製作所 研磨方法および研磨装置
US9375824B2 (en) 2013-11-27 2016-06-28 Applied Materials, Inc. Adjustment of polishing rates during substrate polishing with predictive filters
US9490186B2 (en) 2013-11-27 2016-11-08 Applied Materials, Inc. Limiting adjustment of polishing rates during substrate polishing
US9352440B2 (en) * 2014-04-30 2016-05-31 Applied Materials, Inc. Serial feature tracking for endpoint detection
WO2016010821A1 (en) * 2014-07-16 2016-01-21 Applied Materials, Inc. Polishing with measurement prior to deposition
TWI779986B (zh) * 2016-11-30 2022-10-01 美商應用材料股份有限公司 使用神經網路的光譜監測
JP7023063B2 (ja) * 2017-08-08 2022-02-21 株式会社荏原製作所 基板研磨装置及び方法
TWI828706B (zh) * 2018-06-20 2024-01-11 美商應用材料股份有限公司 用於原位電磁感應監控的基板摻雜補償的方法、電腦程式產品及研磨系統
TWI848121B (zh) * 2019-06-10 2024-07-11 日商東京威力科創股份有限公司 基板處理裝置、基板檢查方法及記錄媒體
JP7536039B2 (ja) * 2019-12-13 2024-08-19 株式会社荏原製作所 基板洗浄装置、研磨装置、バフ処理装置、基板洗浄方法、基板処理装置、および機械学習器
EP4171874A4 (en) 2020-06-24 2024-11-27 Applied Materials, Inc. POLISHING SUPPORT HEAD WITH PIEZOELECTRIC PRESSURE CONTROL
US11794302B2 (en) 2020-12-15 2023-10-24 Applied Materials, Inc. Compensation for slurry composition in in-situ electromagnetic inductive monitoring
EP4301548A4 (en) * 2021-03-03 2025-01-29 Applied Materials, Inc. IN-SITU MONITORING FOR MARKING TRAINING SPECTRA FOR A MACHINE LEARNING SYSTEM FOR SPECTROGRAPHIC MONITORING
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Also Published As

Publication number Publication date
KR101929072B1 (ko) 2018-12-13
WO2012145336A3 (en) 2013-03-14
WO2012145336A2 (en) 2012-10-26
JP2014512690A (ja) 2014-05-22
US8751033B2 (en) 2014-06-10
US20110256805A1 (en) 2011-10-20
KR20140025471A (ko) 2014-03-04

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