JP6030122B2 - 終点検出のためのスペクトル特徴の適応的追跡 - Google Patents
終点検出のためのスペクトル特徴の適応的追跡 Download PDFInfo
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- JP6030122B2 JP6030122B2 JP2014506491A JP2014506491A JP6030122B2 JP 6030122 B2 JP6030122 B2 JP 6030122B2 JP 2014506491 A JP2014506491 A JP 2014506491A JP 2014506491 A JP2014506491 A JP 2014506491A JP 6030122 B2 JP6030122 B2 JP 6030122B2
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
F=A×x2+B×x+C
として表すことができ、ここで、A、B、およびCは2次多項式関数Fの係数であり、xは時間またはプラテン回転の回数を表す。
正規化スペクトル=(A−Dark)/(Si−Dark)
ここで、Aは未処理のスペクトルであり、Darkは暗黒状態下で得られたスペクトルであり、Siはベアシリコン基板から得られたスペクトルである。
ΔV=ΔVD+(d1−D1)/(dD/dV)+(D2−dT)/(dD/dV)
ΔV=ΔVD+(D2−dT)/(dD/dV)
である。
Claims (15)
- 研磨を制御する方法であって、
基板を研磨することと、
基板を研磨中にインシトゥモニタシステムでモニタすることと、
前記インシトゥモニタシステムからの測定から値のシーケンスを生成することであって、ここで、雑音を排除すると前記値のシーケンスは研磨時間にわたって線形に変化する、生成することと、
研磨時間にわたって単調である非線形関数を前記値のシーケンスにフィットさせることと、
前記非線形関数が目標値に達する予測時間を決定することと、
前記予測時間に基づいて研磨終点または研磨速度調整の少なくとも一方を決定することと
を含む、方法。 - 前記非線形関数が2次以上の多項式関数を含む、請求項1に記載の方法。
- 前記非線形関数を前記値のシーケンスにフィットさせることが、Savitzky−Golay法を含む、請求項1に記載の方法。
- 前記インシトゥモニタシステムが分光モニタシステムを含み、前記基板からの光のスペクトルのシーケンスを研磨中に前記分光モニタシステムで測定することをさらに含む、請求項1に記載の方法。
- 前記スペクトルのシーケンスからの測定スペクトルごとに、複数の参照スペクトルを有するライブラリから最も良く一致する参照スペクトルを見いだすこと
をさらに含み、
前記値のシーケンスを生成することが、最も良く一致する参照スペクトルごとに、前記最も良く一致する参照スペクトルに関連する値を決定することを含む、請求項4に記載の方法。 - 前記スペクトルのシーケンスからの測定スペクトルごとに、前記測定スペクトルのピークまたは谷の位置または幅を見いだして、位置または幅の値のシーケンスを生成すること
をさらに含み、
前記値のシーケンスが、前記位置または幅の値のシーケンスから生成される、請求項4に記載の方法。 - 前記非線形関数が目標値に一致するか目標値を超えるときに、前記研磨を停止させることをさらに含む、請求項1に記載の方法。
- 前記基板を研磨することが、ポリシリコンおよび/または誘電体材料を含む層を研磨することを含み、前記基板をモニタすることが、前記層をモニタすることを含む、請求項1に記載の方法。
- 前記層が、純粋なポリシリコンからなる、請求項8に記載の方法。
- 前記層が、誘電体材料からなる、請求項8に記載の方法。
- 研磨を制御するためのコンピュータプログラムを記録した機械可読ストレージメディアであって、前記コンピュータプログラムが、プロセッサに、
インシトゥモニタシステムからの基板の測定から値のシーケンスを前記基板の研磨中に生成させ、ここで、雑音を排除すると前記値のシーケンスは研磨時間にわたって線形に変化し、
研磨時間にわたって単調である非線形関数を前記値のシーケンスにフィットさせ、
前記非線形関数が目標値に達する予測時間を決定させ、および
前記予測時間に基づいて研磨終点または研磨速度調整の少なくとも一方を決定させる
ための命令を含む、コンピュータプログラムを記録した機械可読ストレージメディア。 - 前記非線形関数が2次以上の多項式関数を含む、請求項11に記載のコンピュータプログラムを記録した機械可読ストレージメディア。
- 前記非線形関数を前記値のシーケンスにフィットさせる命令が、Savitzky−Golay法を実行させる命令を含む、請求項11に記載のコンピュータプログラムを記録した機械可読ストレージメディア。
- 分光モニタシステムから、前記基板からの光のスペクトルのシーケンスを受け取らせる命令を含む、請求項11に記載のコンピュータプログラムを記録した機械可読ストレージメディア。
- 前記値のシーケンスを生成させる命令が、前記スペクトルのシーケンスからの測定スペクトルごとに、
i)複数の参照スペクトルを有するライブラリから最も良く一致する参照スペクトルを見いだして、前記最も良く一致する参照スペクトルに関連する値を決定させるか、または
ii)前記測定スペクトルのピークまたは谷の位置または幅を見いださせる
命令を含む、請求項14に記載のコンピュータプログラムを記録した機械可読ストレージメディア。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/090,972 US8751033B2 (en) | 2008-11-14 | 2011-04-20 | Adaptive tracking spectrum features for endpoint detection |
US13/090,972 | 2011-04-20 | ||
PCT/US2012/033969 WO2012145336A2 (en) | 2011-04-20 | 2012-04-17 | Adaptively tracking spectrum features for endpoint detection |
Publications (3)
Publication Number | Publication Date |
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JP2014512690A JP2014512690A (ja) | 2014-05-22 |
JP2014512690A5 JP2014512690A5 (ja) | 2015-06-11 |
JP6030122B2 true JP6030122B2 (ja) | 2016-11-24 |
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JP2014506491A Active JP6030122B2 (ja) | 2011-04-20 | 2012-04-17 | 終点検出のためのスペクトル特徴の適応的追跡 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8751033B2 (ja) |
JP (1) | JP6030122B2 (ja) |
KR (1) | KR101929072B1 (ja) |
WO (1) | WO2012145336A2 (ja) |
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US20120034844A1 (en) * | 2010-08-05 | 2012-02-09 | Applied Materials, Inc. | Spectrographic monitoring using index tracking after detection of layer clearing |
US8694144B2 (en) | 2010-08-30 | 2014-04-08 | Applied Materials, Inc. | Endpoint control of multiple substrates of varying thickness on the same platen in chemical mechanical polishing |
US9960088B2 (en) | 2011-11-07 | 2018-05-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | End point detection in grinding |
US9358660B2 (en) * | 2011-11-07 | 2016-06-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Grinding wheel design with elongated teeth arrangement |
US8563335B1 (en) | 2012-04-23 | 2013-10-22 | Applied Materials, Inc. | Method of controlling polishing using in-situ optical monitoring and fourier transform |
US9168630B2 (en) * | 2012-04-23 | 2015-10-27 | Applied Materials, Inc. | User-input functions for data sequences in polishing endpoint detection |
US9011202B2 (en) * | 2012-04-25 | 2015-04-21 | Applied Materials, Inc. | Fitting of optical model with diffraction effects to measured spectrum |
US9289875B2 (en) | 2012-04-25 | 2016-03-22 | Applied Materials, Inc. | Feed forward and feed-back techniques for in-situ process control |
US9296084B2 (en) * | 2012-07-19 | 2016-03-29 | Applied Materials, Inc. | Polishing control using weighting with default sequence |
US20140030956A1 (en) * | 2012-07-25 | 2014-01-30 | Jimin Zhang | Control of polishing of multiple substrates on the same platen in chemical mechanical polishing |
US9221147B2 (en) * | 2012-10-23 | 2015-12-29 | Applied Materials, Inc. | Endpointing with selective spectral monitoring |
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JP7023063B2 (ja) * | 2017-08-08 | 2022-02-21 | 株式会社荏原製作所 | 基板研磨装置及び方法 |
TWI828706B (zh) * | 2018-06-20 | 2024-01-11 | 美商應用材料股份有限公司 | 用於原位電磁感應監控的基板摻雜補償的方法、電腦程式產品及研磨系統 |
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US20110256805A1 (en) | 2011-10-20 |
WO2012145336A2 (en) | 2012-10-26 |
WO2012145336A3 (en) | 2013-03-14 |
KR101929072B1 (ko) | 2018-12-13 |
US8751033B2 (en) | 2014-06-10 |
KR20140025471A (ko) | 2014-03-04 |
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