JP6026900B2 - Electronic component storage package and electronic device using the same - Google Patents

Description

  The present invention relates to an electronic component storage package capable of storing an electronic component and an electronic device configured to store the electronic component in the electronic component storage package.

  In recent years, an electronic component storage package capable of mounting an electronic component such as a semiconductor for optical communication has been proposed (see, for example, Patent Document 1). In such a package, in order to dissipate the heat generated from the electronic component, a laminated structure having a three-layer structure of copper, molybdenum, and copper as a heat sink and having the electronic component mounted on the upper surface is provided. Used. In addition, it is known that the thermal expansion coefficient of copper is about 17 ppm / ° C., and the thermal expansion coefficient of molybdenum is about 5.1 ppm / ° C. (see, for example, Patent Document 2).

JP 2002-324865 A JP 2005-317648 A

  In the electronic component storage package described above, the laminated structure generally has a higher coefficient of thermal expansion than an electronic component made of a semiconductor material, but since molybdenum, which is a metal material having a low coefficient of thermal expansion, is laminated, It has a lower coefficient of thermal expansion than a heat sink made of copper, which is a metal material having a high coefficient of thermal expansion. Therefore, for example, when the electronic component, the laminated structure, and the heat sink thermally expand due to heat generation of the electronic component, the difference between the thermal expansion amount of the electronic component and the laminated structure, and the thermal expansion of the laminated structure. The difference between the amount of heat and the amount of thermal expansion of the heat sink is large, so thermal stress is applied between the electronic component and the laminated structure and between the laminated structure and the heat sink, and the electronic component is peeled from the laminated structure. It is easy to peel off the laminated structure and the heat sink. As a result, heat generated by the electronic component is difficult to be released, and a malfunction such as malfunction of the electronic component due to high temperature may occur.

  An electronic component storage package according to an embodiment of the present invention includes a first metal plate made of metal having a heat sink connection region on the lower surface, and a first metal bonding member including pores on the upper surface of the first metal plate. The second metal plate made of a metal having a smaller coefficient of thermal expansion than the metal of the first metal plate, and the second metal plate joined via a second metal joining member including pores, A laminated structure including an electronic component mounting region on an upper surface and a third metal plate made of a metal having a larger thermal expansion coefficient than that of the metal of the second metal plate, wherein the porosity of the first metal bonding member is It is larger than the porosity of the said 2nd metal joining member.

  According to the present invention, since the multilayer structure has the above-described configuration, the connection reliability between the electronic component and the multilayer structure and the connection reliability between the multilayer structure and the heat sink can be improved. . As a result, it is possible to provide an electronic component storage package and an electronic device that can ensure electrical reliability of the mounted electronic component.

FIG. 1 is a perspective view of an electronic component storage package and an electronic apparatus using the same according to an embodiment of the present invention. FIG. 2 is a plan view of the electronic component storage package shown in FIG. FIG. 3 is a cross-sectional view of the electronic component storage package shown in FIG. 1 cut along the I-I ′ cross section. FIG. 4 is an enlarged view of an A portion of the electronic component storage package shown in FIG. FIG. 5 is a perspective view for explaining one manufacturing process of the electronic component storage package shown in FIG. 1 and an electronic device using the same. FIG. 6 is a perspective view for explaining one manufacturing process of the electronic component storage package shown in FIG. 1 and an electronic device using the same. FIG. 7 is a perspective view for explaining one manufacturing process of the electronic component storage package shown in FIG. 1 and an electronic device using the same.

(Electronic component storage package and electronic device using the same)
Hereinafter, an electronic component storage package and an electronic apparatus using the same according to an embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a schematic perspective view showing an electronic component storage package and an electronic apparatus using the electronic component storage package, and shows the electronic component storage package with the lid removed. FIG. 2 is a plan view showing the electronic component storage package with the lid shown in FIG. 1 removed from above. FIG. 3 is a cross-sectional view of the electronic component storage package with the lid shown in FIG. 1 removed along the II ′ cross section. The electronic component and the heat sink are removed, and the structure of the laminated structure and the laminated structure 2 shows the positional relationship between the ceramic frame and the ceramic frame in detail. FIG. 4 is an enlarged view of an A part of the electronic component storage package shown in FIG. 3, and shows the positional relationship between the first metal plate and the ceramic frame in detail.

  The electronic device 1 includes an electronic component storage package 2 and an electronic component 3 stored in the electronic component storage package 2. The electronic device 1 is incorporated in, for example, an optical transmission module or an optical reception module for optical communication, and transmits an optical signal to the outside of the electronic device 1 or receives an optical signal from the outside of the electronic device 1. To do.

  The electronic component storage package 2 stores and protects the electronic component 3 and is disposed on the heat sink 4. The electronic component storage package 2 is positioned so as to surround the electronic component mounting area of the stacked structure 5 and the laminated structure 5 having an electronic component mounting area on which the electronic component 3 is mounted, and on the side portion. The formed ceramic frame 6 having the through-hole V and the notch H, the lid 7 disposed on the upper surface of the ceramic frame 6, and formed through the ceramic frame 6 from the inner side to the outer side. The signal wiring 8A and the ground layer 8B, which are partially located in the notch H as viewed, are included, and the lead terminals 9 disposed on the signal wiring 8A.

  In the electronic component storage package 2, for example, an optical fiber is inserted and fixed in the through hole V, and after the light from the optical fiber is converted into an electric signal by the electronic component 3 such as a light receiving element, the electric signal is converted into a signal. This is transmitted to an external circuit (not shown) via the wiring 8A and the lead terminal 9.

The electronic component 3 is mounted on the upper surface of the laminated structure 5 and connected to the signal wiring 8A via a bonding wire or the like, and performs processing such as converting an optical signal and an electrical signal to each other. Specifically, the electronic component 3 is bonded to the upper surface of the multilayer structure 5 via, for example, an electrode only on the upper surface and a low melting point metal material such as solder on the upper surface of the multilayer structure 5. The electronic component 3 is a semiconductor element such as a photodiode, IC, LSI, light emitting diode, or laser diode, and is made of a semiconductor material such as silicon or gallium nitride. Generally, the thermal expansion coefficient of the electronic component 3 is smaller than the thermal expansion coefficient of the laminated structure 5 of the electronic component storage package 2, and is set to, for example, 3 ppm / ° C. or more and 8 ppm / ° C. or less. In addition, a thermal expansion coefficient is measured by the measuring method according to JISK7197-1991 using a commercially available TMA (thermomechanical analysis) apparatus, for example.

  The heat sink 4 is disposed on the lower surface of the electronic component storage package 2 and releases heat generated from the electronic component 3 through the electronic component storage package 2. Specifically, the heat sink 4 is joined to the lower surface of the laminated structure 5 via a low melting point metal material such as solder or a heat conductive resin material. The heat sink 4 is made of a metal material such as copper or aluminum, and has a thermal expansion coefficient larger than that of the stacked structure 5 of the electronic component storage package 2. The thermal expansion coefficient of the heat sink 4 is set to, for example, 12 ppm / ° C. or more and 35 ppm / ° C. or less.

  The laminated structure 5 has the electronic component 3 mounted on the center of the upper surface to support the electronic component 3, and is disposed on the upper surface of the heat sink 4 to transmit heat generated from the electronic component 3 to the heat sink 4. The laminated structure 5 is formed in a flat plate shape, has an electronic component mounting area on which the electronic component 3 is mounted at the center of the upper surface, and has a heat sink connection region on the lower surface. From the viewpoint of effective heat dissipation, it is preferable that the entire lower surface of the laminated structure 5 is a heat sink connection region.

  Specifically, as shown in FIG. 3, the laminated structure 5 is formed by laminating a first metal plate 511, a second metal plate 512, and a third metal plate 513 in order from the bottom. The first metal plate 511 has a heat sink connection region on the lower surface, and the third metal plate 513 has an electronic component mounting region on the upper surface. The first metal plate 511 and the second metal plate 512 are joined via a first metal joining member 521, and the second metal plate 512 and the third metal plate 513 are joined via a second metal joining member 522. Has been. In addition, it is desirable that the first joining member 521 and the second joining member 522 are arranged over the entire region where the corresponding metal plates are overlapped from the viewpoint of reliably joining the metal plates.

  The first metal plate 511 is formed in a rectangular shape when viewed from above. The horizontal length (the length in the X-axis direction) of the first metal plate 511 is set to, for example, 5 mm or more and 50 mm or less. The vertical length (the length in the Y-axis direction) of the first metal plate 511 is set to, for example, 5 mm or more and 50 mm or less. The thickness (length in the Z-axis direction) of the first metal plate 511 is set to, for example, 0.1 mm or more and 3 mm or less.

  The first metal plate 511 is made of a metal material such as copper or silver, for example. The coefficient of thermal expansion of the first metal plate 511 is set to, for example, 12 ppm / ° C. or more and 25 ppm / ° C. or less. The thermal conductivity of the first metal plate 511 is set to, for example, 300 W / m · K or more and 450 W / m · K or less. The Young's modulus of the first metal plate 511 is set to, for example, 80 GPa or more and 150 GPa or less. The thermal conductivity is measured using, for example, a laser flash method. Young's modulus is measured by a measurement method according to ISO 527-1: 1993 using a nanoindenter.

  The second metal plate 512 is formed in a rectangular shape when viewed from above. The horizontal length (length in the X-axis direction) of the second metal plate 512 is set to, for example, 4 mm or more and 40 mm or less. The vertical length (the length in the Y-axis direction) of the second metal plate 512 is set to, for example, 4 mm or more and 40 mm or less. The thickness (the length in the Z-axis direction) of the second metal plate 512 is set to 0.1 mm or more and 3 mm or less, for example.

The second metal plate 512 is made of a metal material such as molybdenum or tungsten, for example, and has a smaller coefficient of thermal expansion than the first metal plate 511. The coefficient of thermal expansion of the second metal plate 512 is set to, for example, not less than 3.5 ppm / ° C. and not more than 7 ppm / ° C. The thermal conductivity of the second metal plate 512 is
For example, it is set to 100 W / m · K or more and 150 W / m · K or less. The Young's modulus of the second metal plate 512 is set to 300 GPa or more and 350 GPa or less, for example.

  The third metal plate 513 is formed in a rectangular shape when viewed from above. The horizontal length (length in the X-axis direction) of the third metal plate 513 is set to, for example, 4 mm or more and 40 mm or less. The vertical length (the length in the Y-axis direction) of the third metal plate 513 is set to 4 mm or more and 40 mm or less, for example. The thickness (length in the Z-axis direction) of the third metal plate 513 is set to, for example, 0.1 mm or more and 3 mm or less.

  The third metal plate 513 is made of a metal material such as copper or silver, for example, and has a higher coefficient of thermal expansion than the second metal plate 512. The coefficient of thermal expansion of the third metal plate 513 is set to, for example, 12 ppm / ° C. or more and 25 ppm / ° C. or less. The thermal conductivity of the third metal plate 513 is set to 300 W / m · K or more and 450 W / m · K or less, for example. The Young's modulus of the third metal plate 513 is set to, for example, 80 GPa or more and 150 GPa or less. The third metal plate 513 may be the same material as the first metal plate 511.

  The first metal bonding member 521 can use, for example, silver brazing made of an alloy mainly composed of silver and copper, and includes pores. The porosity of the first metal joining member 521 is set to, for example, 5% or more and 40% or less. The porosity is measured by, for example, an ultrasonic flaw detection method. The thermal conductivity of the first metal bonding member 521 is set to, for example, 150 W / m · K or more and 450 W / m · K or less.

  The second metal joining member 522 can use, for example, silver brazing made of an alloy mainly composed of silver and copper, and includes pores. Here, the porosity of the second metal bonding member 522 is smaller than the porosity of the first metal bonding member 521, and is set to, for example, 1% or more and 30% or less. The thermal conductivity of the second gold bonding member 522 is set to, for example, 150 W / m · K or more and 450 W / m · K or less.

  Such adjustment of the porosity can be performed, for example, by adjusting the heating time when joining by brazing. Specifically, the heating time of the first metal joining member 521 at the time of joining the first metal plate 511 and the second metal plate 522 is set to the second time at the time of joining the second metal plate 522 and the third metal plate 523. The heating time of the metal bonding member 522 is shorter than that. Thereby, the amount of bubbles that escape from the first metal bonding member 522 can be reduced, and the amount of bubbles that escape from the second metal bonding member 522 can be increased. As a result, the porosity of the second metal bonding member 522 can be made smaller than the porosity of the first metal bonding member 522.

  As described above, the porosity of the first metal joining member 521 that joins the first metal plate 511 and the second metal plate 512 is the second metal joint that joins the second metal plate 512 and the third metal plate 513. It is larger than the porosity of the member 522. As a result, since the restraining force of the first metal plate 511 by the second metal plate 512 having a low coefficient of thermal expansion is reduced, the amount of thermal expansion of the first metal plate 511 can be increased. On the other hand, since the restraining force of the third metal plate 513 by the second metal plate 512 is increased, the amount of thermal expansion of the third metal plate 513 can be reduced. Thereby, the difference between the thermal expansion amount of the first metal plate 511 on the lower side of the laminated structure 5 and the thermal expansion amount of the heat sink 4 having a high thermal expansion coefficient becomes small. In addition, the amount of thermal expansion of the third metal plate 513 on the upper side of the laminated structure 5 is less different from the amount of thermal expansion of the electronic component 3 having a low coefficient of thermal expansion.

Due to the operation described above, peeling between the electronic component 3 and the laminated structure 5 and peeling between the laminated structure 5 and the heat sink 4 are less likely to occur. As a result, the connection reliability between the electronic component 3 and the multilayer structure 5 and the connection reliability between the multilayer structure 5 and the heat sink 4 can be improved. Therefore, since the release of heat generated from the electronic component 3 can be maintained, the electrical reliability of the electronic component 3 can be ensured, and as a result, the electrical reliability of the electronic device 1 can be improved.

  The Young's modulus of the second metal plate 512 is desirably larger than the Young's modulus of each of the first metal plate 511 and the third metal plate 513. As a result, even if the amount of thermal expansion differs between the upper and lower surfaces of the second metal plate 512 due to the difference between the amount of thermal expansion of the first metal plate 511 and the amount of thermal expansion of the third metal plate 513, the first metal plate 511 and Since the influence of the thermal expansion of the third metal plate 513 on the deformation of the second metal plate 512 can be reduced, the flatness of the second metal plate 512 can be maintained and the warpage of the laminated structure 5 can be suppressed. can do. Therefore, the connection between the electronic component 3 and the multilayer structure 5 or the connection between the multilayer structure 5 and the heat sink 4 can be secured, and as a result, the electrical reliability of the electronic device 1 can be improved.

  It is desirable that the pores of the first metal bonding member 521 are distributed more in the center than in the outer edge portion of the first metal bonding member 521 as viewed from above. As a result, since the thermal conductivity in the region immediately below the electronic component 3 is reduced, the heat generated from the electronic component 3 can be easily transferred in the plane direction of the laminated structure 5, and the heat generated from the electronic component 3 is transferred to the laminated structure. This is because the heat can be transmitted to the heat sink 4 from the entire lower surface of the body 5. Therefore, since the heat dissipation efficiency of the heat generated from the electronic component 3 can be improved, the electrical reliability of the electronic component 3 can be improved, and consequently the electrical reliability of the electronic device 1 can be improved. it can. The pore distribution of the first metal bonding member 521 is adjusted by adjusting the heating time of the first metal bonding member 521. Since the bubbles contained in the first metal bonding member 521 escape from the bubbles at the outer edge of the first metal bonding member 521, by stopping heating before the bubbles at the center of the first metal bonding member 521 are removed, The air bubbles in the center can be left.

  It is desirable that the pores of the second metal bonding member 522 are distributed more in the central portion than the outer edge portion of the second metal bonding member 522 as viewed from above. As a result, the heat conductivity in the region immediately below the electronic component 3 is reduced, so that heat generated from the electronic component 3 can be easily transferred in the plane direction of the laminated structure 5, and the layer is laminated in the region immediately below the electronic component 3. This is because it is possible to prevent the structure 5 from being greatly thermally expanded locally. Therefore, the connection reliability between the multilayer structure 5 and the electronic component 3 can be improved. The adjustment of the pore distribution of the second metal bonding member 522 is performed in the same manner as the adjustment of the distribution of the pores of the first metal bonding member 521.

  The thermal conductivity of the first metal plate 511 is preferably larger than the thermal conductivity of the second metal plate 512. As a result, the heat generated from the electronic component 3 and transferred to the second metal plate 512 is easily transferred to the first metal plate 511, so that the heat stays in the second metal plate 512 can be reduced. it can. Therefore, the amount of thermal expansion of the second metal plate 512 can be reduced, and the amount of thermal expansion of the third metal plate 513 can be suppressed. Therefore, as compared with the case where the first metal plate 511 is not provided, not only can the difference between the thermal expansion amount of the laminated structure 4 and the thermal expansion amount of the heat sink 4 be reduced, but also the thermal expansion amount of the electronic component 3. And the difference in thermal expansion amount of the laminated structure 4 can be reduced satisfactorily.

  The thermal conductivity of the third metal plate 513 is desirably larger than the thermal conductivity of the second metal plate 512. As a result, heat generated from the electronic component 3 can be easily transferred to the third metal plate 513, and the heat from the stacked electronic component 3 can be reduced from staying on the upper surface of the multilayer structure 5. Therefore, since it is possible to suppress the accumulation of heat in the electronic component 3, the electrical reliability of the electronic component 3 can be ensured, and as a result, the electrical reliability of the electronic device 1 can be improved. .

The ceramic frame 6 is positioned so as to surround the electronic component mounting area of the multilayer structure 5 and protects the electronic component 3 mounted in the electronic component mounting area. The ceramic frame 6 is made of a ceramic such as an aluminum oxide sintered body, a mullite sintered body, a silicon carbide sintered body, an aluminum nitride sintered body, or a silicon nitride sintered body. Moreover, the ceramic frame 6 is comprised by the laminated body of the ceramic layer which consists of a several sintered compact. The thermal expansion coefficient of the ceramic frame 6 is set to 3 ppm / ° C. or more and 10 ppm / ° C. or less, for example. The thermal conductivity of the ceramic frame 6 is set to, for example, 5 W / m · K or more and 50 W / m · K or less. The Young's modulus of the ceramic frame 6 is set to 200 GPa or more and 450 GPa or less, for example.

  The ceramic frame body 6 is formed in a frame shape having upper and lower surfaces, and the inner edge of the ceramic frame body 6 is formed in a rectangular shape.

  In addition, the horizontal length (length in the X-axis direction) of the inner edge of the ceramic frame 6 is set to, for example, 5 mm or more and 50 mm or less. The vertical length (the length in the Y-axis direction) of the inner edge of the ceramic frame 6 is set to, for example, 5 mm or more and 50 mm or less. The thickness of the ceramic frame 6 (the length in the Z-axis direction) is set to, for example, 0.5 mm or more and 50 mm or less.

  Moreover, as shown in FIG. 3, it is desirable that the third metal plate 513 is fitted into the ceramic frame 6. As a result, the ceramic frame body 6 can suppress the thermal expansion in the plane direction of the third metal plate 513 fitted in the ceramic frame body 6, so that the thermal expansion amount of the third metal plate 513 and the electronic component 3 can be reduced. The difference with the amount of thermal expansion of can be reduced. Therefore, the difference between the thermal expansion amount of the laminated structure 5 and the thermal expansion amount of the electronic component 3 can be reduced, and the electrical reliability of the electronic device 1 can be improved.

  The corners of the inner edge of the ceramic frame 6 are preferably curved when viewed from above. As a result, when the third metal plate 513 is fitted, the thermal expansion of the third substrate 513 reduces the concentration of thermal stress on the corners of the ceramic frame 5, and cracks in the ceramic frame 6 are reduced. Occurrence can be suppressed.

  The outer edges of the second metal plate 512 and the third metal plate 513 are preferably positioned on the inner side of the outer edge of the first metal plate 511 so that the upper surface of the first metal plate 511 is exposed. Then, it is desirable that the second metal plate 512 and the third metal plate 513 are fitted into the ceramic frame body 6 and joined to the exposed upper surface of the first metal plate 511. As a result, the amount of thermal expansion of the third metal plate 513 can be reduced by the ceramic frame 6, and the heat generated from the electronic component 3 can be transmitted to the first metal plate 511 through the ceramic frame 6. The heat dissipation efficiency of the electronic component storage package 2 can be improved.

  Further, as shown in FIG. 4, a groove-shaped recess T is formed on the upper surface of the first metal plate 511 so as to surround the second metal plate 512, and the lower end of the ceramic frame 6 is a recess. It is desirable to enter T. As a result, the ceramic frame 6 functions like a wedge and reduces the amount of thermal expansion on the upper surface side of the first metal plate 511 immediately below the second metal plate 512, so that the first metal plate 511 and the second metal Separation from the plate 512 can be suppressed. Note that the depth of the recess is set to 30% or less of the thickness of the first metal plate.

  The outer edge of the first metal plate 511 is preferably located between the inner edge and the outer edge of the ceramic frame 6. That is, the ceramic frame 6 is disposed on the first metal plate 511 so that the lower end of the ceramic frame 6 presses the outer edge of the first metal plate 511. As a result, the outer edge portion of the first metal plate 511 that is not joined to the second metal plate 512 can be prevented from warping. Therefore, the lower surface of the first metal plate 511, and thus the entire lower surface of the laminated structure 5, and the upper surface of the heat sink 4 are in good contact with each other, so that the heat dissipation efficiency of the heat generated from the electronic component 3 can be improved.

  The lid body 7 is disposed on the upper surface of the ceramic frame body 6 and protects the electronic component 3 together with the ceramic frame body 6. The lid 7 is joined to the ceramic frame 6 via a seal ring 10 disposed on the upper surface of the ceramic frame 6. Each of the lid 7 and the seal ring 10 is made of, for example, a metal material such as iron, copper, silver, nickel, chromium, cobalt, molybdenum, or tungsten, or an alloy or a laminate obtained by combining a plurality of these metal materials.

  8 A of signal wiring is distribute | arranged from the inner side of the ceramic frame 6 to the outer side inside the ceramic frame 6, and the electronic component 3 is electrically connected. The signal wiring 8A is made of a metal material such as copper, gold, silver, platinum, nickel, molybdenum, or manganese. And it is electrically connected with the electronic component 3 via a bonding wire etc., for example. The thermal conductivity of the signal wiring 8A is set to 60 W / m · K or more and 400 W / m · K or less at 25 ° C., for example.

  The ground layer 8B is located on both sides of the signal wiring 8A, and improves the electrical characteristics of the signal wiring 8A. The ground layer 8B is made of the same material as the signal wiring 8A.

  The lead terminal 9 is disposed on the signal wiring 8A and is electrically connected to the external substrate, thereby electrically connecting the electronic component 3 and the external substrate. The lead terminal 9 is made of a metal material such as iron, copper, silver, nickel, chromium, cobalt, molybdenum, or tungsten.

  The present invention is not limited to the above-described embodiments, and various changes and improvements can be made without departing from the scope of the present invention.

  For example, in the above-described embodiment of the present invention, the configuration in which the second metal plate 512 and the third metal plate 513 are fitted into the ceramic frame 6 has been described as an example. However, the ceramic frame 6 has the third metal plate 513. It may be arranged on the upper surface. In this case, the stress applied to the ceramic frame 6 due to the thermal expansion of the third metal plate 513 can be reduced, and the generation of cracks in the ceramic frame 6 can be suppressed.

  In the above-described embodiment of the present invention, the electronic component 3 has been described as an example of a configuration in which the electronic component 3 is joined to the upper surface of the multilayer structure 5 via solder or the like. It may be arranged on the laminated structure 5 via the above. Even in this case, by reducing the thermal expansion amount of the multilayer structure 5, the connection reliability between the multilayer structure 5 and the ceramic substrate or the Peltier element can be improved. As a result, the electrical reliability of the electronic component 3 can be improved. Can be improved.

  In the embodiment of the present invention described above, the heat sink 4 is described as an example of a configuration in which the heat sink 4 is joined to the lower surface of the multilayer structure 5 via solder or the like. It may be fixed. Even in this case, by reducing the difference between the thermal expansion amount of the laminated structure 5 and the thermal expansion amount of the heat sink 4, the shear stress applied to the screw can be reduced, and problems such as screw breakage can be prevented. Therefore, the connection reliability between the laminated structure 5 and the heat sink 4 can be improved.

(Electronic device manufacturing method)
A method for manufacturing the electronic device 1 shown in FIG. 1 will be described below with reference to FIGS. FIG. 5 shows the shapes of the first green sheet and the second green sheet. FIG. 6 shows a state where the first green sheet and the second green sheet are laminated to form a green sheet laminate. FIG. 7 shows a state in which the laminated structure 5 is formed from the first metal plate 511, the second metal plate 512, and the third metal plate 513.

  (1) A method for forming the ceramic frame 6 will be described below. First, a plurality of green sheets are formed. Specifically, for example, an organic binder, a plasticizer, a solvent, or the like is added to and mixed with ceramic powder such as boron nitride, aluminum nitride, silicon nitride, silicon carbide, or beryllium oxide, and the mixture is formed into a layer. Thus, a plurality of green sheets are produced. Next, as shown in FIG. 5, a first green sheet 11 having a recess in which a notch H is formed later and a second green sheet 13 having a wiring forming portion 12 are prepared.

  (2) A refractory metal powder such as tungsten or molybdenum is prepared, and an organic binder, a plasticizer or a solvent is added to and mixed with the powder to prepare a metal paste. Next, as shown in FIG. 5, a metal paste is printed in a predetermined pattern on the wiring forming portion 12 of the second green sheet 13.

  (3) As shown in FIG. 6, the first green sheet 11 and the second green sheet 13 are laminated. At this time, the first green sheet 11 and the second green sheet 13 are formed so that the outer shape of the first green sheet 11 and the outer shape of the second green sheet 13 are the same except for the recess that is formed in the second green sheet 13 and becomes the notch H. The sheet 11 and the second green sheet 13 are laminated to form a green sheet laminate 14.

  (4) The green sheet laminate 14 is fired to form the ceramic frame 6, and the metal paste printed in a predetermined pattern on the wiring forming portion 12 is used as the signal wiring 8A and the ground layer 8B.

  (5) A method for forming the laminated structure 5 will be described below. First, as shown in FIG. 7, a first metal plate 511 made of copper, a second metal plate 512 made of molybdenum, and a third metal plate 513 made of copper are prepared. Then, the second metal plate 512 and the third metal plate 513 are joined by the second metal joining member 522 made of silver solder. The second metal plate 512 and the third metal plate 513 are joined by arranging the third metal plate 513 on the upper surface of the second metal plate 512 via the second metal joining member 522, and then the second metal joining member 522. The second metal bonding member 522 is heated at a temperature not lower than the melting point and not higher than the boiling point. Specifically, the heating temperature of the second metal bonding member 522 is set to, for example, 780 ° C. or more and 900 ° C. or less, and the heating time of the second metal bonding member 522 is set to, for example, 10 minutes or more and 20 minutes or less.

  Next, the second metal plate 512 is joined to the upper surface of the first metal member 511 via the first metal joining member 521 made of silver solder. The first metal plate 511 and the second metal plate 512 are joined by arranging the second metal plate 512 on the upper surface of the first metal plate 511 via the first metal joining member 521 and then the first metal joining member 521. This is performed by heating the first metal bonding member 521 at a temperature not lower than the melting point and not higher than the boiling point. Specifically, the heating temperature of the first metal bonding member 521 is set to, for example, 780 ° C. or more and 900 ° C. or less, and the heating time of the first metal bonding member 521 is set to, for example, 5 minutes or more and 10 minutes or less. The laminated structure 5 is formed as described above.

  (6) The laminated structure 5 is joined to the lower surface of the ceramic frame 6. Then, after mounting the electronic component 3 on the upper surface of the laminated structure 5, the lid 7 is joined to the upper surface of the ceramic frame 6, thereby producing the electronic component storage package 2 and the electronic device 1 using the same. can do.

DESCRIPTION OF SYMBOLS 1 Electronic device 2 Electronic component storage package 3 Electronic component 4 Heat sink 5 Laminated structure 511 1st metal plate 512 2nd metal plate 513 3rd metal plate 521 1st metal joining member 522 2nd metal joining member 6 Ceramic frame 7 Lid 8A Signal wiring 8B Ground layer 9 Lead terminal 10 Seal ring 11 First green sheet 12 Wiring forming part 13 Second green sheet 14 Green sheet laminate H Notch T Recess V Through hole

Claims (4)

A first metal plate made of a metal having a heat sink connection region on the lower surface;
A second metal plate made of a metal having a smaller coefficient of thermal expansion than the metal of the first metal plate, which is bonded to the upper surface of the first metal plate via a first metal bonding member including pores;
A second metal plate made of a metal having a thermal expansion coefficient higher than that of the metal of the second metal plate, which is bonded to the upper surface of the second metal plate via a second metal bonding member including pores and has an electronic component mounting region on the upper surface. Comprising a laminated structure including three metal plates;
The electronic component housing package, wherein the porosity of the first metal bonding member is larger than the porosity of the second metal bonding member. The electronic component storage package according to claim 1,
A package for storing electronic parts, further comprising a ceramic frame into which the third metal plate is fitted. The electronic component storage package according to claim 2,
The outer edges of the second metal plate and the third metal plate are respectively positioned on the inner side of the outer edge of the first metal plate so that the upper surface of the first metal plate is exposed,
The ceramic frame is a package for storing electronic parts, wherein the second metal plate is fitted together with the third metal plate, and is joined to the exposed upper surface of the first metal plate. The electronic component storage package according to any one of claims 1 to 3,
An electronic device comprising: an electronic component mounted in the electronic component mounting region of the electronic component storage package.

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