JP6020520B2 - 接着剤層付半導体チップの製造方法及び半導体装置 - Google Patents
接着剤層付半導体チップの製造方法及び半導体装置 Download PDFInfo
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- JP6020520B2 JP6020520B2 JP2014143602A JP2014143602A JP6020520B2 JP 6020520 B2 JP6020520 B2 JP 6020520B2 JP 2014143602 A JP2014143602 A JP 2014143602A JP 2014143602 A JP2014143602 A JP 2014143602A JP 6020520 B2 JP6020520 B2 JP 6020520B2
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- 0 COC(c(cc1*(O2)=O)ccc1C2=O)=O Chemical compound COC(c(cc1*(O2)=O)ccc1C2=O)=O 0.000 description 3
- RDOXTESZEPMUJZ-UHFFFAOYSA-N COc1ccccc1 Chemical compound COc1ccccc1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 2
- BHPJMWUXVOTGQU-UHFFFAOYSA-N COc1ccccc1C(F)(F)F Chemical compound COc1ccccc1C(F)(F)F BHPJMWUXVOTGQU-UHFFFAOYSA-N 0.000 description 2
- MILSYCKGLDDVLM-UHFFFAOYSA-N CC(C)(c1ccccc1)c1ccccc1 Chemical compound CC(C)(c1ccccc1)c1ccccc1 MILSYCKGLDDVLM-UHFFFAOYSA-N 0.000 description 1
- GVEDOIATHPCYGS-UHFFFAOYSA-N Cc1cccc(-c2cccc(C)c2)c1 Chemical compound Cc1cccc(-c2cccc(C)c2)c1 GVEDOIATHPCYGS-UHFFFAOYSA-N 0.000 description 1
- CFTSORNHIUMCGF-UHFFFAOYSA-N FC(C(C(F)(F)F)(c1ccccc1)c1ccccc1)(F)F Chemical compound FC(C(C(F)(F)F)(c1ccccc1)c1ccccc1)(F)F CFTSORNHIUMCGF-UHFFFAOYSA-N 0.000 description 1
- VBFVFTVNLQCICW-UHFFFAOYSA-N FC(c1ccccc1-c1c(C(F)(F)F)cccc1)(F)F Chemical compound FC(c1ccccc1-c1c(C(F)(F)F)cccc1)(F)F VBFVFTVNLQCICW-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Adhesives Or Adhesive Processes (AREA)
- Die Bonding (AREA)
Description
[式中、Q4及びQ9は各々独立に炭素数1〜5のアルキレン基又は置換基を有してもよいフェニレン基を示し、Q5、Q6、Q7、及びQ8は各々独立に炭素数1〜5のアルキル基、フェニル基又はフェノキシ基を示し、pは1〜5の整数を示す。]
Claims (7)
- 一方面上に回路を有する半導体ウェハの他方面上に溶媒を含む接着剤組成物をスピンコートにより塗布する塗布工程と、
前記接着剤組成物の前記溶媒を除去して接着剤層を形成する接着剤層形成工程と、
前記接着剤層を形成した前記半導体ウェハを切断して接着剤層付半導体チップを得る切断工程と、
を備え、
前記接着剤層は1〜5μmの厚さを有し、
前記接着剤組成物は、(A)熱可塑性樹脂、(B)熱硬化性樹脂、(C)加熱により除去することが可能な前記溶媒、及び無機フィラーを含み、
前記無機フィラーの含有量が、(A)熱可塑性樹脂100質量部に対して、1〜1000質量部であり、
前記無機フィラーの粒度分布は、個数基準の頻度分布でみたときに最大粒径が5.0μm以下の範囲に2つのピークを有し、前記2つのピークの粒径の差が1μm以上である、接着剤層付半導体チップの製造方法。 - 前記接着剤組成物は、E型粘度計を用いて27℃で測定される粘度が1000mPa・s以下である、請求項1に記載の製造方法。
- 前記接着剤組成物は更に(D)着色剤を含む、請求項1又は2に記載の製造方法。
- 前記(A)熱可塑性樹脂は分子中にイミド骨格を持つ化合物を含む、請求項1〜3のいずれか一項に記載の製造方法。
- 前記(A)熱可塑性樹脂のガラス転移温度(Tg)は10〜100℃である、請求項1〜4のいずれか一項に記載の製造方法。
- 前記接着剤層の30℃におけるタック強度は0.98N以下である、請求項1〜5のいずれか一項に記載の製造方法。
- 請求項1〜6のいずれか一項に記載の製造方法によって得られる接着剤層付半導体チップを支持部材に載せて加熱圧着し、半導体チップと前記支持部材とを接着剤層を介して接着させる工程を備える、半導体装置の製造方法。
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JP2014143602A JP6020520B2 (ja) | 2014-07-11 | 2014-07-11 | 接着剤層付半導体チップの製造方法及び半導体装置 |
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JP2014143602A JP6020520B2 (ja) | 2014-07-11 | 2014-07-11 | 接着剤層付半導体チップの製造方法及び半導体装置 |
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JP2009259858A Division JP5819039B2 (ja) | 2009-11-13 | 2009-11-13 | 接着剤層付半導体チップ及び半導体装置の製造方法 |
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JP2014225682A JP2014225682A (ja) | 2014-12-04 |
JP6020520B2 true JP6020520B2 (ja) | 2016-11-02 |
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Families Citing this family (1)
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JP6868555B2 (ja) * | 2016-03-15 | 2021-05-12 | 古河電気工業株式会社 | フィルム状接着剤用組成物、フィルム状接着剤、フィルム状接着剤の製造方法、フィルム状接着剤を用いた半導体パッケージおよびその製造方法 |
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JP4303705B2 (ja) * | 2004-09-02 | 2009-07-29 | 住友ベークライト株式会社 | 半導体用接着フィルム及びこれを用いた半導体装置 |
JP4380684B2 (ja) * | 2006-10-20 | 2009-12-09 | 住友ベークライト株式会社 | 半導体用接着フィルム、ダイシングフィルムおよび半導体装置 |
JP5382484B2 (ja) * | 2006-11-13 | 2014-01-08 | 住友ベークライト株式会社 | 接着剤層付き半導体素子の製造方法および半導体パッケージの製造方法 |
JP5019363B2 (ja) * | 2007-02-22 | 2012-09-05 | 信越化学工業株式会社 | エポキシ樹脂接着剤組成物 |
JP5380886B2 (ja) * | 2007-04-18 | 2014-01-08 | 日立化成株式会社 | 接着剤付きウエハ及びその製造方法 |
JP2009152493A (ja) * | 2007-12-21 | 2009-07-09 | Shinko Electric Ind Co Ltd | 半導体装置の製造方法 |
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