JP6005634B2 - 太陽電池セル構造を形成する方法 - Google Patents

太陽電池セル構造を形成する方法 Download PDF

Info

Publication number
JP6005634B2
JP6005634B2 JP2013515335A JP2013515335A JP6005634B2 JP 6005634 B2 JP6005634 B2 JP 6005634B2 JP 2013515335 A JP2013515335 A JP 2013515335A JP 2013515335 A JP2013515335 A JP 2013515335A JP 6005634 B2 JP6005634 B2 JP 6005634B2
Authority
JP
Japan
Prior art keywords
subcell
adhesive layer
substrate
nanometers
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2013515335A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013531893A (ja
JP2013531893A5 (enExample
Inventor
アンドレーア ボカ，
アンドレーア ボカ，
ダニエル シー． ロー，
ダニエル シー． ロー，
ジョセフ チャールズ ボイスヴァート，
ジョセフ チャールズ ボイスヴァート，
ナサー エイチ． カラム，
ナサー エイチ． カラム，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Boeing Co
Original Assignee
Boeing Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Boeing Co filed Critical Boeing Co
Publication of JP2013531893A publication Critical patent/JP2013531893A/ja
Publication of JP2013531893A5 publication Critical patent/JP2013531893A5/ja
Application granted granted Critical
Publication of JP6005634B2 publication Critical patent/JP6005634B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/142—Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/142—Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
    • H10F10/1425—Inverted metamorphic multi-junction [IMM] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/144—Photovoltaic cells having only PN homojunction potential barriers comprising only Group III-V materials, e.g. GaAs,AlGaAs, or InP photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/161—Photovoltaic cells having only PN heterojunction potential barriers comprising multiple PN heterojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/40—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in a mechanically stacked configuration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H10F71/1395—Manufacture or treatment of devices covered by this subclass using temporary substrates for thin-film devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Adhesives Or Adhesive Processes (AREA)
JP2013515335A 2010-06-14 2011-04-28 太陽電池セル構造を形成する方法 Active JP6005634B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/814,722 2010-06-14
US12/814,722 US8993879B2 (en) 2010-06-14 2010-06-14 Solar cell structure and composition and method for forming the same
PCT/US2011/034255 WO2011159397A2 (en) 2010-06-14 2011-04-28 Solar cell structure and composition and method for forming the same

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016076946A Division JP6375332B2 (ja) 2010-06-14 2016-04-07 太陽電池セル構造、及び同太陽電池セル構造を形成する組成物及び方法

Publications (3)

Publication Number Publication Date
JP2013531893A JP2013531893A (ja) 2013-08-08
JP2013531893A5 JP2013531893A5 (enExample) 2014-06-19
JP6005634B2 true JP6005634B2 (ja) 2016-10-12

Family

ID=44626471

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2013515335A Active JP6005634B2 (ja) 2010-06-14 2011-04-28 太陽電池セル構造を形成する方法
JP2016076946A Active JP6375332B2 (ja) 2010-06-14 2016-04-07 太陽電池セル構造、及び同太陽電池セル構造を形成する組成物及び方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2016076946A Active JP6375332B2 (ja) 2010-06-14 2016-04-07 太陽電池セル構造、及び同太陽電池セル構造を形成する組成物及び方法

Country Status (4)

Country Link
US (2) US8993879B2 (enExample)
EP (1) EP2580789B1 (enExample)
JP (2) JP6005634B2 (enExample)
WO (1) WO2011159397A2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160005911A1 (en) * 2013-03-14 2016-01-07 Ricoh Company, Ltd. Compound semiconductor photovoltaic cell and manufacturing method of the same
US20150007864A1 (en) * 2013-07-08 2015-01-08 The Boeing Company Adhesive Bonded Solar Cell Assembly
US9425331B2 (en) * 2014-08-06 2016-08-23 The Boeing Company Solar cell wafer connecting system
JP2016121883A (ja) * 2014-12-24 2016-07-07 日本写真印刷株式会社 圧力センサ
FR3047350B1 (fr) * 2016-02-03 2018-03-09 Soitec Substrat avance a miroir integre
WO2020209010A1 (ja) * 2019-04-09 2020-10-15 信越半導体株式会社 電子デバイスの製造方法
CN112216759A (zh) * 2020-09-22 2021-01-12 中国电子科技集团公司第十八研究所 一种三端双面叠层太阳电池及其制备工艺

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5328549A (en) 1980-04-10 1994-07-12 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
US6683783B1 (en) * 1997-03-07 2004-01-27 William Marsh Rice University Carbon fibers formed from single-wall carbon nanotubes
JP2000277779A (ja) * 1999-03-26 2000-10-06 Nagoya Kogyo Univ 半導体間接着方法、この方法を使用して製造した半導体および半導体装置
US7488890B2 (en) 2003-04-21 2009-02-10 Sharp Kabushiki Kaisha Compound solar battery and manufacturing method thereof
JP2004319934A (ja) * 2003-04-21 2004-11-11 Sharp Corp 多接合型太陽電池およびその製造方法
FR2879208B1 (fr) 2004-12-15 2007-02-09 Commissariat Energie Atomique Procede de collage de deux surfaces libres, respectivement de premier et second substrats differents
US8158881B2 (en) * 2005-07-14 2012-04-17 Konarka Technologies, Inc. Tandem photovoltaic cells
US20100136224A1 (en) 2006-03-13 2010-06-03 David Alexander Britz Stable nanotube coatings
US20080089829A1 (en) * 2006-10-13 2008-04-17 Rensselaer Polytechnic Institute In-situ back-contact formation and site-selective assembly of highly aligned carbon nanotubes
US20090114273A1 (en) * 2007-06-13 2009-05-07 University Of Notre Dame Du Lac Nanomaterial scaffolds for electron transport
JP5266907B2 (ja) * 2007-06-29 2013-08-21 東レ株式会社 カーボンナノチューブ集合体、分散体および導電性フィルム
CN101842446A (zh) * 2007-08-29 2010-09-22 西北大学 由经分选的碳纳米管制备的透明电导体及其制备方法
JP5180574B2 (ja) * 2007-12-14 2013-04-10 株式会社カネカ 多接合型シリコン系薄膜光電変換装置
JP2011513951A (ja) 2008-02-21 2011-04-28 コナルカ テクノロジーズ インコーポレイテッド タンデム型光電池
DE102008021706A1 (de) 2008-04-24 2009-11-05 Forschungsverbund Berlin E.V. Auf einem Nitrid der Gruppe III basierenden Halbleitersubstrates mit einem vordefinierten Krümmungsradius und Verfahren zu dessen Herstellung
US8916769B2 (en) * 2008-10-01 2014-12-23 International Business Machines Corporation Tandem nanofilm interconnected semiconductor wafer solar cells
JP5098956B2 (ja) * 2008-10-31 2012-12-12 コニカミノルタホールディングス株式会社 有機光電変換素子の製造方法
US8435595B2 (en) * 2009-07-15 2013-05-07 Empire Technology Development, Llc Carbon nanotube transparent films
TW201108298A (en) * 2009-08-21 2011-03-01 Tatung Co Field emission lamp

Also Published As

Publication number Publication date
JP2016174157A (ja) 2016-09-29
US8993879B2 (en) 2015-03-31
WO2011159397A3 (en) 2012-08-16
JP6375332B2 (ja) 2018-08-15
US20150171253A1 (en) 2015-06-18
JP2013531893A (ja) 2013-08-08
US11081609B2 (en) 2021-08-03
US20110303288A1 (en) 2011-12-15
EP2580789A2 (en) 2013-04-17
EP2580789B1 (en) 2018-11-21
WO2011159397A2 (en) 2011-12-22

Similar Documents

Publication Publication Date Title
JP6375332B2 (ja) 太陽電池セル構造、及び同太陽電池セル構造を形成する組成物及び方法
US8207442B2 (en) Reinforcing structures for thin-film photovoltaic device substrates, and associated methods
Xu et al. Flexible perovskite solar cells: material selection and structure design
KR101141052B1 (ko) 전력 손실이 최소화된 태양전지용 전면 전극 및 이를 포함하는 태양전지
JP2011096748A5 (enExample)
JP5539299B2 (ja) 太陽電池モジュールの製造方法
CN104134752A (zh) 钙钛矿太阳能电池及其热塑性碳对电极的制备方法
JP2004228333A (ja) 光起電力セル、及びその製造方法
JP2003243676A (ja) 薄膜光電変換装置
JP2013531893A5 (enExample)
CN103489949B (zh) 薄膜太阳能电池用层叠体、薄膜太阳能电池及其制造方法
US20130125983A1 (en) Imprinted Dielectric Structures
US20220416100A1 (en) Transparent electrode, method for producing the same, and electronic device using transparent electrode
CN102881754B (zh) 一种氧化铝不鼓泡的背面点接触电池及其制备方法
KR20190136687A (ko) 태양전지용 보호필름 및 이의 제조방법
CN103828051B (zh) 太阳能电池及其制造方法
CN114823975A (zh) 一种柔性薄膜太阳能电池及其制备方法
JP5611272B2 (ja) 太陽電池モジュールの製造方法
KR102684701B1 (ko) 초박막 반사 방지 스티커의 제작방법
Boca et al. Carbon nanotube-composite wafer bonding for ultra-high efficiency III–V multijunction solar cells
JP2009146737A (ja) 半導体電極及び該製造方法、並びに色素増感型太陽電池
KR102363401B1 (ko) 태양전지 및 태양전지의 제조방법
JP2013243178A (ja) 太陽電池モジュールとその製造方法
CN121218698A (zh) 太阳电池及其制备方法
CN121511669A (zh) 钙钛矿叠层太阳能电池

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140425

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140425

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140910

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140916

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20141204

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150519

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20151208

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160407

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20160414

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160621

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160701

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160809

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160907

R150 Certificate of patent or registration of utility model

Ref document number: 6005634

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250