JP6005634B2 - 太陽電池セル構造を形成する方法 - Google Patents

太陽電池セル構造を形成する方法 Download PDF

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JP6005634B2
JP6005634B2 JP2013515335A JP2013515335A JP6005634B2 JP 6005634 B2 JP6005634 B2 JP 6005634B2 JP 2013515335 A JP2013515335 A JP 2013515335A JP 2013515335 A JP2013515335 A JP 2013515335A JP 6005634 B2 JP6005634 B2 JP 6005634B2
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subcell
adhesive layer
substrate
nanometers
component
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JP2013531893A (ja
JP2013531893A5 (enExample
Inventor
アンドレーア ボカ，
アンドレーア ボカ，
ダニエル シー． ロー，
ダニエル シー． ロー，
ジョセフ チャールズ ボイスヴァート，
ジョセフ チャールズ ボイスヴァート，
ナサー エイチ． カラム，
ナサー エイチ． カラム，
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Boeing Co
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Boeing Co
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/142—Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/142—Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
    • H10F10/1425—Inverted metamorphic multi-junction [IMM] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/144—Photovoltaic cells having only PN homojunction potential barriers comprising only Group III-V materials, e.g. GaAs,AlGaAs, or InP photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/161—Photovoltaic cells having only PN heterojunction potential barriers comprising multiple PN heterojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/40—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in a mechanically stacked configuration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H10F71/1395—Manufacture or treatment of devices covered by this subclass using temporary substrates for thin-film devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Adhesives Or Adhesive Processes (AREA)
JP2013515335A 2010-06-14 2011-04-28 太陽電池セル構造を形成する方法 Active JP6005634B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/814,722 2010-06-14
US12/814,722 US8993879B2 (en) 2010-06-14 2010-06-14 Solar cell structure and composition and method for forming the same
PCT/US2011/034255 WO2011159397A2 (en) 2010-06-14 2011-04-28 Solar cell structure and composition and method for forming the same

Related Child Applications (1)

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JP2016076946A Division JP6375332B2 (ja) 2010-06-14 2016-04-07 太陽電池セル構造、及び同太陽電池セル構造を形成する組成物及び方法

Publications (3)

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JP2013531893A JP2013531893A (ja) 2013-08-08
JP2013531893A5 JP2013531893A5 (enExample) 2014-06-19
JP6005634B2 true JP6005634B2 (ja) 2016-10-12

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JP2013515335A Active JP6005634B2 (ja) 2010-06-14 2011-04-28 太陽電池セル構造を形成する方法
JP2016076946A Active JP6375332B2 (ja) 2010-06-14 2016-04-07 太陽電池セル構造、及び同太陽電池セル構造を形成する組成物及び方法

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US (2) US8993879B2 (enExample)
EP (1) EP2580789B1 (enExample)
JP (2) JP6005634B2 (enExample)
WO (1) WO2011159397A2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014142340A1 (en) * 2013-03-14 2014-09-18 Ricoh Company, Ltd. Compound semiconductor photovoltaic cell and manufacturing method of the same
US20150007864A1 (en) * 2013-07-08 2015-01-08 The Boeing Company Adhesive Bonded Solar Cell Assembly
US9425331B2 (en) * 2014-08-06 2016-08-23 The Boeing Company Solar cell wafer connecting system
JP2016121883A (ja) * 2014-12-24 2016-07-07 日本写真印刷株式会社 圧力センサ
FR3047350B1 (fr) * 2016-02-03 2018-03-09 Soitec Substrat avance a miroir integre
US11990459B2 (en) * 2019-04-09 2024-05-21 Shin-Etsu Handotai Co., Ltd. Method for producing electronic device comprising solar cell structure along with drive circuit
CN112216759A (zh) * 2020-09-22 2021-01-12 中国电子科技集团公司第十八研究所 一种三端双面叠层太阳电池及其制备工艺

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US5328549A (en) 1980-04-10 1994-07-12 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
US6683783B1 (en) * 1997-03-07 2004-01-27 William Marsh Rice University Carbon fibers formed from single-wall carbon nanotubes
JP2000277779A (ja) * 1999-03-26 2000-10-06 Nagoya Kogyo Univ 半導体間接着方法、この方法を使用して製造した半導体および半導体装置
JP2004319934A (ja) * 2003-04-21 2004-11-11 Sharp Corp 多接合型太陽電池およびその製造方法
US7488890B2 (en) 2003-04-21 2009-02-10 Sharp Kabushiki Kaisha Compound solar battery and manufacturing method thereof
FR2879208B1 (fr) 2004-12-15 2007-02-09 Commissariat Energie Atomique Procede de collage de deux surfaces libres, respectivement de premier et second substrats differents
US8158881B2 (en) * 2005-07-14 2012-04-17 Konarka Technologies, Inc. Tandem photovoltaic cells
US20100136224A1 (en) 2006-03-13 2010-06-03 David Alexander Britz Stable nanotube coatings
US20080089829A1 (en) * 2006-10-13 2008-04-17 Rensselaer Polytechnic Institute In-situ back-contact formation and site-selective assembly of highly aligned carbon nanotubes
US20090114273A1 (en) * 2007-06-13 2009-05-07 University Of Notre Dame Du Lac Nanomaterial scaffolds for electron transport
JP5266907B2 (ja) * 2007-06-29 2013-08-21 東レ株式会社 カーボンナノチューブ集合体、分散体および導電性フィルム
US8323784B2 (en) * 2007-08-29 2012-12-04 Northwestern Universtiy Transparent electrical conductors prepared from sorted carbon nanotubes and methods of preparing same
JP5180574B2 (ja) * 2007-12-14 2013-04-10 株式会社カネカ 多接合型シリコン系薄膜光電変換装置
US20090211633A1 (en) * 2008-02-21 2009-08-27 Konarka Technologies Inc. Tandem Photovoltaic Cells
DE102008021706A1 (de) 2008-04-24 2009-11-05 Forschungsverbund Berlin E.V. Auf einem Nitrid der Gruppe III basierenden Halbleitersubstrates mit einem vordefinierten Krümmungsradius und Verfahren zu dessen Herstellung
US8916769B2 (en) * 2008-10-01 2014-12-23 International Business Machines Corporation Tandem nanofilm interconnected semiconductor wafer solar cells
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Also Published As

Publication number Publication date
US20150171253A1 (en) 2015-06-18
JP2013531893A (ja) 2013-08-08
JP6375332B2 (ja) 2018-08-15
EP2580789B1 (en) 2018-11-21
WO2011159397A3 (en) 2012-08-16
US11081609B2 (en) 2021-08-03
US8993879B2 (en) 2015-03-31
WO2011159397A2 (en) 2011-12-22
EP2580789A2 (en) 2013-04-17
US20110303288A1 (en) 2011-12-15
JP2016174157A (ja) 2016-09-29

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