JP6005549B2 - 加熱処理装置及び加熱処理方法 - Google Patents
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- JP6005549B2 JP6005549B2 JP2013037138A JP2013037138A JP6005549B2 JP 6005549 B2 JP6005549 B2 JP 6005549B2 JP 2013037138 A JP2013037138 A JP 2013037138A JP 2013037138 A JP2013037138 A JP 2013037138A JP 6005549 B2 JP6005549 B2 JP 6005549B2
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- 238000010438 heat treatment Methods 0.000 title claims description 78
- 238000000034 method Methods 0.000 title claims description 31
- 230000008569 process Effects 0.000 claims description 15
- 230000005540 biological transmission Effects 0.000 claims description 5
- 239000000758 substrate Substances 0.000 description 36
- 239000010409 thin film Substances 0.000 description 21
- 229910021417 amorphous silicon Inorganic materials 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- 230000002265 prevention Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 101000574352 Mus musculus Protein phosphatase 1 regulatory subunit 17 Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
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- H—ELECTRICITY
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- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/64—Heating using microwaves
- H05B6/72—Radiators or antennas
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/64—Heating using microwaves
- H05B6/70—Feed lines
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/64—Heating using microwaves
- H05B6/70—Feed lines
- H05B6/701—Feed lines using microwave applicators
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/64—Heating using microwaves
- H05B6/70—Feed lines
- H05B6/707—Feed lines using waveguides
- H05B6/708—Feed lines using waveguides in particular slotted waveguides
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/64—Heating using microwaves
- H05B6/78—Arrangements for continuous movement of material
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/64—Heating using microwaves
- H05B6/80—Apparatus for specific applications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Recrystallisation Techniques (AREA)
- Constitution Of High-Frequency Heating (AREA)
Description
10 加熱処理装置
11 処理室
13 マグネトロン
14 アンテナ
15 開口部
16 チョーク構造
17 スロット
18 加熱デバイス
Claims (11)
- 内部へマイクロ波が導入される複数の管状の処理室を備え、前記複数の処理室は互いに平行に配置され、且つ前記複数の処理室の各々は被処理体に対向する開口部を有し、
各前記処理室の長手方向に垂直な方向から各前記処理室が重畳されるように各前記処理室を眺めたとき、各前記処理室内で発生する定在波の位相が互いに一致しないように、各前記処理室が前記長手方向に関してずらして配置されることを特徴とする加熱処理装置。 - 前記複数の処理室をn個備える場合、前記マイクロ波の実効波長をλgとすると、各前記処理室は前記長手方向に関してλg/(2×n)ずつずらして配置されることを特徴とする請求項1記載の加熱処理装置。
- 各前記処理室は、当該処理室の内部へ前記マイクロ波を発振するアンテナを有し、
各前記処理室の長手方向に関する一端の内壁から多端の内壁までの長さは、m×λg/2(mは正の整数)であり、
各前記処理室において、前記アンテナは前記処理室の長手方向に関する端部の内壁からλg/4+p×λg/2(pは0を含む正の整数)だけずらして配置されることを特徴とする請求項2記載の加熱処理装置。 - 各前記処理室の長手方向に垂直な方向から各前記処理室が重畳されるように各前記処理室を眺めたとき、各前記処理室のアンテナは重畳しないように配置される請求項3記載の加熱処理装置。
- 各前記処理室の長手方向に垂直な方向から各前記処理室が重畳されるように各前記処理室を眺めたとき、各前記処理室のアンテナは前記長手方向に関してほぼ均等に配置されることを特徴とする請求項4記載の加熱処理装置。
- 各前記処理室は、前記開口部の脇に溝状のチョーク構造を有し、前記チョーク構造の深さはλg/4であることを特徴とする請求項2乃至5のいずれか1項に記載の加熱処理装置。
- 各前記処理室は、前記開口部の近傍の壁部において当該処理室から前記被処理体へ向けてのマイクロ波の伝送を阻害するように設けられたスロットを有することを特徴とする請求項2乃至5のいずれか1項に記載の加熱処理装置。
- 各前記処理室によって前記マイクロ波を前記被処理体へ吸収させる前に、前記被処理体を予備加熱する予備加熱装置を有することを特徴とする請求項1乃至7のいずれか1項に記載の加熱処理装置。
- 内部へマイクロ波が導入される複数の管状の処理室を備え、前記複数の処理室は互いに平行に配置され、且つ前記複数の処理室の各々は被処理体に対向する開口部を有する加熱処理装置において実行される加熱処理方法であって、
各前記処理室の長手方向に垂直な方向から各前記処理室が重畳されるように各前記処理室を眺めたときに重畳して観察される各前記処理室内で発生する定在波の位相を互いにずらすことを特徴とする加熱処理方法。 - 一の前記処理室の内部へ前記マイクロ波が導入されるとき、他の前記処理室の内部へは前記マイクロ波が導入されないことを特徴とする請求項9記載の加熱処理方法。
- 各前記処理室によって前記マイクロ波を前記被処理体へ吸収させる前に、前記被処理体を予備加熱することを特徴とする請求項9又は10記載の加熱処理方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013037138A JP6005549B2 (ja) | 2013-02-27 | 2013-02-27 | 加熱処理装置及び加熱処理方法 |
CN201380073951.5A CN105027670A (zh) | 2013-02-27 | 2013-12-26 | 加热处理装置和加热处理方法 |
US14/771,046 US20160013056A1 (en) | 2013-02-27 | 2013-12-26 | Heat treatment apparatus and heat treatment method |
KR1020157026486A KR20150122735A (ko) | 2013-02-27 | 2013-12-26 | 가열 처리 장치 및 가열 처리 방법 |
PCT/JP2013/085335 WO2014132546A1 (ja) | 2013-02-27 | 2013-12-26 | 加熱処理装置及び加熱処理方法 |
TW103105655A TW201448671A (zh) | 2013-02-27 | 2014-02-20 | 加熱處理裝置及加熱處理方法 |
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JP2013037138A JP6005549B2 (ja) | 2013-02-27 | 2013-02-27 | 加熱処理装置及び加熱処理方法 |
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JP2014165111A JP2014165111A (ja) | 2014-09-08 |
JP6005549B2 true JP6005549B2 (ja) | 2016-10-12 |
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US (1) | US20160013056A1 (ja) |
JP (1) | JP6005549B2 (ja) |
KR (1) | KR20150122735A (ja) |
CN (1) | CN105027670A (ja) |
TW (1) | TW201448671A (ja) |
WO (1) | WO2014132546A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2017062423A1 (en) * | 2015-10-07 | 2017-04-13 | Corning Incorporated | Method of laser preparation of a coated substrate to be laser cut |
DE102015122976A1 (de) * | 2015-12-30 | 2017-07-20 | Sig Technology Ag | Vorrichtung und Verfahren zum Erhitzen von Zuschnitten und/oder Packungsmänteln und/oder Verpackungen aus Verbundmaterial durch Orientierungspolarisation |
US10438828B2 (en) | 2016-10-03 | 2019-10-08 | Applied Materials, Inc. | Methods and apparatus to prevent interference between processing chambers |
US10052887B1 (en) | 2017-02-23 | 2018-08-21 | Ricoh Company, Ltd. | Serpentine microwave dryers for printing systems |
DE102017114102A1 (de) * | 2017-06-26 | 2018-12-27 | Harald Heinz Peter Benoit | Vorrichtung und Verfahren zum Erhitzen eines Materials |
US11670525B2 (en) * | 2018-04-20 | 2023-06-06 | Applied Materials, Inc. | Methods and apparatus for microwave leakage reduction for semiconductor process chambers |
CN109729612A (zh) * | 2018-12-17 | 2019-05-07 | 四川大学 | 一种高均匀性的双端口微波解冻腔体 |
CN109743806A (zh) * | 2018-12-17 | 2019-05-10 | 四川大学 | 一种提升微波加热均匀性的方法及其双端口微波加热装置 |
EP3900486A1 (de) * | 2018-12-21 | 2021-10-27 | Gerlach Maschinenbau GmbH | Vernetzungsvorrichtung mit monomode-applikator |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS5232034U (ja) * | 1975-08-28 | 1977-03-07 | ||
JPS5930652B2 (ja) * | 1981-04-16 | 1984-07-28 | 株式会社東芝 | マイクロ波加熱脱硝装置 |
KR200141222Y1 (ko) * | 1993-10-13 | 1999-03-20 | 구자홍 | 전자렌지의 고주파 방향 조절장치 |
JP3077879B2 (ja) * | 1994-02-15 | 2000-08-21 | インターナショナル・ビジネス・マシーンズ・コーポレ−ション | ウェブ・タイプの定量された処理材料にマイクロ波エネルギーを印加するための装置及び方法 |
JP2005043022A (ja) * | 2003-07-25 | 2005-02-17 | Tokyo Denshi Kk | 加熱装置 |
JP2005049009A (ja) * | 2003-07-28 | 2005-02-24 | Tokyo Denshi Kk | 加熱装置 |
JP2006134621A (ja) * | 2004-11-04 | 2006-05-25 | Tokyo Denshi Kk | マイクロ波加熱装置 |
JP5490192B2 (ja) * | 2011-12-28 | 2014-05-14 | 東京エレクトロン株式会社 | マイクロ波加熱処理装置および処理方法 |
KR101488659B1 (ko) * | 2012-03-06 | 2015-02-02 | 코닝정밀소재 주식회사 | 고주파 가열 장치 |
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2013
- 2013-02-27 JP JP2013037138A patent/JP6005549B2/ja not_active Expired - Fee Related
- 2013-12-26 CN CN201380073951.5A patent/CN105027670A/zh active Pending
- 2013-12-26 WO PCT/JP2013/085335 patent/WO2014132546A1/ja active Application Filing
- 2013-12-26 US US14/771,046 patent/US20160013056A1/en not_active Abandoned
- 2013-12-26 KR KR1020157026486A patent/KR20150122735A/ko not_active Application Discontinuation
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2014
- 2014-02-20 TW TW103105655A patent/TW201448671A/zh unknown
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Publication number | Publication date |
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KR20150122735A (ko) | 2015-11-02 |
TW201448671A (zh) | 2014-12-16 |
US20160013056A1 (en) | 2016-01-14 |
WO2014132546A1 (ja) | 2014-09-04 |
JP2014165111A (ja) | 2014-09-08 |
CN105027670A (zh) | 2015-11-04 |
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