JP6004866B2 - 読出し回路及び半導体装置 - Google Patents
読出し回路及び半導体装置 Download PDFInfo
- Publication number
- JP6004866B2 JP6004866B2 JP2012212942A JP2012212942A JP6004866B2 JP 6004866 B2 JP6004866 B2 JP 6004866B2 JP 2012212942 A JP2012212942 A JP 2012212942A JP 2012212942 A JP2012212942 A JP 2012212942A JP 6004866 B2 JP6004866 B2 JP 6004866B2
- Authority
- JP
- Japan
- Prior art keywords
- data
- latch circuit
- circuit
- switch
- read
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/02—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding parasitic signals
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
- G11C7/106—Data output latches
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
- G11C7/1063—Control signal output circuits, e.g. status or busy flags, feedback command signals
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/24—Memory cell safety or protection circuits, e.g. arrangements for preventing inadvertent reading or writing; Status cells; Test cells
Landscapes
- Engineering & Computer Science (AREA)
- Computer Security & Cryptography (AREA)
- Read Only Memory (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Description
ここで、入力端子INにHighのデータが入力されている状態について、読出し回路の動作を説明する。
以上説明した時間T1から時間T4までが、読出し回路1の読出し期間の動作である。
静電気などのノイズによって、第1のラッチ回路11と第2のラッチ回路12はデータが反転する可能性がある。ここで、第1のラッチ回路11と第2のラッチ回路12は同一の回路で構成しているので、データが反転するのであれば同じ値に反転する。従って、第1のラッチ回路11のデータがHighからLowに反転する場合は、第2のラッチ回路12のデータは、反転せずにLowを保持する。
31 メモリ素子
34 ラッチ回路
Claims (3)
- 入力端子のデータを読み出す第1のスイッチと、
前記第1のスイッチが読出したデータを保持する第1のラッチ回路と、
前記第1のラッチ回路のデータを初期化する第2のスイッチと、
前記第1のラッチ回路のデータを出力する出力端子と、
前記第1のラッチ回路のデータを反転したデータを保持する第2のラッチ回路と、
前記第1のラッチ回路のデータと前記第2のラッチ回路のデータのどちらが反転するデータ異常を検出する検出回路と、
前記第1のラッチ回路の初期データを反転したデータに前記第2のラッチ回路を初期化する第3のスイッチと、
前記第1のラッチ回路の保持したデータと前記第2のラッチ回路の初期データが同じ場合に、前記第2のラッチ回路のデータを反転する第4のスイッチと、を備えた読出し回路であって
前記検出回路がデータ異常を検出すると、検出端子から検出信号を出力することを特徴とする読出し回路。 - 前記第1のラッチ回路と前記第2のラッチ回路は、電源ラインを同一にし、隣接して配置することを特徴とする請求項1に記載の読出し回路。
- 前記入力端子に接続されたメモリ素子と、
前記メモリ素子から読出したデータを保持し、且つ前記保持したデータの異常を検出する請求項1または2に記載の読出し回路と、
を備えた半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012212942A JP6004866B2 (ja) | 2012-09-26 | 2012-09-26 | 読出し回路及び半導体装置 |
TW102132189A TWI607443B (zh) | 2012-09-26 | 2013-09-06 | 讀取電路及半導體裝置 |
US14/029,251 US9111644B2 (en) | 2012-09-26 | 2013-09-17 | Readout circuit and semiconductor device |
KR1020130113357A KR102067111B1 (ko) | 2012-09-26 | 2013-09-24 | 독출 회로 및 반도체 장치 |
CN201310443051.7A CN103680630B (zh) | 2012-09-26 | 2013-09-26 | 读出电路及半导体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012212942A JP6004866B2 (ja) | 2012-09-26 | 2012-09-26 | 読出し回路及び半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014068249A JP2014068249A (ja) | 2014-04-17 |
JP6004866B2 true JP6004866B2 (ja) | 2016-10-12 |
Family
ID=50317929
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012212942A Active JP6004866B2 (ja) | 2012-09-26 | 2012-09-26 | 読出し回路及び半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9111644B2 (ja) |
JP (1) | JP6004866B2 (ja) |
KR (1) | KR102067111B1 (ja) |
CN (1) | CN103680630B (ja) |
TW (1) | TWI607443B (ja) |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0814993B2 (ja) * | 1989-01-13 | 1996-02-14 | 株式会社東芝 | 半導体記憶装置 |
JPH03120699A (ja) * | 1989-10-04 | 1991-05-22 | Nec Ic Microcomput Syst Ltd | 論理集積回路 |
JP2000100178A (ja) * | 1998-09-22 | 2000-04-07 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP2004303287A (ja) * | 2003-03-28 | 2004-10-28 | Hitachi Ltd | 半導体集積回路装置 |
JP4152969B2 (ja) * | 2005-01-07 | 2008-09-17 | 富士通株式会社 | ラッチ回路および4相クロック発生器 |
JP2010045610A (ja) * | 2008-08-13 | 2010-02-25 | Toshiba Corp | 半導体集積回路 |
JP5437658B2 (ja) * | 2009-02-18 | 2014-03-12 | セイコーインスツル株式会社 | データ読出回路及び半導体記憶装置 |
-
2012
- 2012-09-26 JP JP2012212942A patent/JP6004866B2/ja active Active
-
2013
- 2013-09-06 TW TW102132189A patent/TWI607443B/zh not_active IP Right Cessation
- 2013-09-17 US US14/029,251 patent/US9111644B2/en not_active Expired - Fee Related
- 2013-09-24 KR KR1020130113357A patent/KR102067111B1/ko active IP Right Grant
- 2013-09-26 CN CN201310443051.7A patent/CN103680630B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN103680630B (zh) | 2018-04-03 |
CN103680630A (zh) | 2014-03-26 |
TWI607443B (zh) | 2017-12-01 |
KR20140040657A (ko) | 2014-04-03 |
US9111644B2 (en) | 2015-08-18 |
TW201432695A (zh) | 2014-08-16 |
US20140085996A1 (en) | 2014-03-27 |
JP2014068249A (ja) | 2014-04-17 |
KR102067111B1 (ko) | 2020-01-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9437323B2 (en) | Shift register circuit for preventing malfunction due to clock skew and memory device including the same | |
US9489992B2 (en) | Semiconductor device and semiconductor system including the same | |
JP2010045610A (ja) | 半導体集積回路 | |
US8952739B2 (en) | Input circuit | |
JP5151413B2 (ja) | データ保持回路 | |
CN105958970B (zh) | 占空比校正电路和包括其的图像感测器件 | |
JP6004866B2 (ja) | 読出し回路及び半導体装置 | |
US10054634B2 (en) | Test device | |
JP2010109717A (ja) | 半導体集積回路及びその制御方法 | |
US8111560B2 (en) | Semiconductor memory device | |
KR102076770B1 (ko) | 반도체 장치 | |
JP5963647B2 (ja) | 半導体記憶回路を備えた半導体装置 | |
JP5117957B2 (ja) | フリップフロップ回路 | |
KR102229235B1 (ko) | 데이터 독출 장치 및 반도체 장치 | |
JP5856461B2 (ja) | データ読出装置 | |
JP5464228B2 (ja) | データ保持回路 | |
JP5738724B2 (ja) | トリミング回路、システム、判定プログラム、確認方法、及び判定方法 | |
CN107025921B (zh) | 存储器装置和用于驱动存储器装置的方法 | |
TW201714177A (zh) | 非揮發性記憶裝置 | |
TWI512753B (zh) | 感測放大器與位元線對的電壓判讀方法 | |
TWI523427B (zh) | 可以免於使用局部脈衝之轉換器 | |
TW201501125A (zh) | 半導體裝置 | |
JP2011090448A (ja) | 半導体集積回路 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20150708 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20160112 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20160526 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160621 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160801 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160830 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160906 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6004866 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |