JP5995562B2 - 荷電粒子装置において用いられる検出器 - Google Patents

荷電粒子装置において用いられる検出器 Download PDF

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Publication number
JP5995562B2
JP5995562B2 JP2012152136A JP2012152136A JP5995562B2 JP 5995562 B2 JP5995562 B2 JP 5995562B2 JP 2012152136 A JP2012152136 A JP 2012152136A JP 2012152136 A JP2012152136 A JP 2012152136A JP 5995562 B2 JP5995562 B2 JP 5995562B2
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electrons
detector
sample
anode
charged particle
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JP2012152136A
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Japanese (ja)
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JP2013019897A (ja
JP2013019897A5 (enExample
Inventor
サンデル コーイマン コルネリス
サンデル コーイマン コルネリス
ニコラース アンネ ファン フィーン ヘラルド
ニコラース アンネ ファン フィーン ヘラルド
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FEI Co
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FEI Co
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
    • G01T1/2914—Measurement of spatial distribution of radiation
    • G01T1/2921—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
    • G01T1/2928—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using solid state detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/261—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2441—Semiconductor detectors, e.g. diodes
    • H01J2237/24415—X-ray
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2448—Secondary particle detectors

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
JP2012152136A 2011-07-07 2012-07-06 荷電粒子装置において用いられる検出器 Active JP5995562B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP11172955A EP2544025A1 (en) 2011-07-07 2011-07-07 Silicon Drift Detector for use in a charged particle apparatus
EP11172955.4 2011-07-07

Publications (3)

Publication Number Publication Date
JP2013019897A JP2013019897A (ja) 2013-01-31
JP2013019897A5 JP2013019897A5 (enExample) 2015-09-03
JP5995562B2 true JP5995562B2 (ja) 2016-09-21

Family

ID=46319067

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012152136A Active JP5995562B2 (ja) 2011-07-07 2012-07-06 荷電粒子装置において用いられる検出器

Country Status (4)

Country Link
US (1) US8941072B2 (enExample)
EP (2) EP2544025A1 (enExample)
JP (1) JP5995562B2 (enExample)
CN (1) CN102866413B (enExample)

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DE102011080341A1 (de) * 2011-08-03 2013-02-07 Carl Zeiss Nts Gmbh Verfahren und Teilchenstrahlgerät zur Erzeugung eines Bildes eines Objekts
US9123837B2 (en) * 2013-05-31 2015-09-01 Oxford Instruments Analytical Oy Semiconductor detector with radiation shield
US10460905B2 (en) * 2015-09-23 2019-10-29 Kla-Tencor Corporation Backscattered electrons (BSE) imaging using multi-beam tools
ITUB20159390A1 (it) * 2015-12-24 2017-06-24 Fond Bruno Kessler Rivelatore a semiconduttore, rivelatore di radiazione e apparecchiatura di rivelazione di radiazione.
KR101749920B1 (ko) * 2016-03-02 2017-06-22 한국과학기술원 실리콘 드리프트 디텍터를 이용한 엑스선 검출용 방사선 검출기
CN105842727B (zh) * 2016-06-03 2018-07-03 中国工程物理研究院激光聚变研究中心 一种透射式平响应软x射线辐射流测量装置
ES2653767B1 (es) 2016-07-07 2019-03-28 Consejo Superior Investigacion Sensor de electrones para microscopia electronica
EP3532873B1 (en) * 2016-10-27 2021-06-23 Shenzhen Xpectvision Technology Co., Ltd. Dark noise compensation in a radiation detector
CN106525028B (zh) * 2016-10-28 2019-05-24 北京控制工程研究所 用于x射线脉冲星导航敏感器的硅漂移探测器处理电路
EP3385756A1 (en) * 2017-04-06 2018-10-10 Koninklijke Philips N.V. Pulse shaper
DE102018204683B3 (de) 2018-03-27 2019-08-08 Carl Zeiss Microscopy Gmbh Elektronenstrahlmikroskop
KR102484833B1 (ko) * 2018-07-31 2023-01-06 한국원자력연구원 방사성 핵종 분석 시스템
DE102019104710B4 (de) * 2019-02-25 2023-04-27 Ketek Gmbh Verfahren zum Betreiben eines Strahlungsdetektionssystems und Strahlungsdetektionssystem
EP3842838A1 (en) * 2019-12-23 2021-06-30 Koninklijke Philips N.V. Radiological instrument with a pulse shaper circuit
CN111584656B (zh) * 2020-06-15 2021-11-09 中国科学院微电子研究所 漂移探测器及其加工方法
CN114300570B (zh) * 2021-12-29 2024-05-17 上海集成电路研发中心有限公司 探测器及制造方法

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JPS5329787A (en) * 1976-08-31 1978-03-20 Kagaku Gijutsucho Hoshasen Igaku Sogo Kenkyusho Measuring device for radiation
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Also Published As

Publication number Publication date
CN102866413A (zh) 2013-01-09
US20130099114A1 (en) 2013-04-25
EP2544026B1 (en) 2013-12-11
EP2544025A1 (en) 2013-01-09
JP2013019897A (ja) 2013-01-31
CN102866413B (zh) 2016-12-28
EP2544026A1 (en) 2013-01-09
US8941072B2 (en) 2015-01-27

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