CN102866413B - 用于在带电粒子设备中使用的检测器 - Google Patents
用于在带电粒子设备中使用的检测器 Download PDFInfo
- Publication number
- CN102866413B CN102866413B CN201210233116.0A CN201210233116A CN102866413B CN 102866413 B CN102866413 B CN 102866413B CN 201210233116 A CN201210233116 A CN 201210233116A CN 102866413 B CN102866413 B CN 102866413B
- Authority
- CN
- China
- Prior art keywords
- detector
- diode
- active volume
- anode
- electron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000002245 particle Substances 0.000 title claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 24
- 239000010703 silicon Substances 0.000 claims abstract description 24
- 230000005855 radiation Effects 0.000 claims abstract description 16
- 238000005259 measurement Methods 0.000 claims abstract description 14
- 238000001514 detection method Methods 0.000 claims description 4
- 238000007689 inspection Methods 0.000 claims 1
- 239000003990 capacitor Substances 0.000 description 9
- 239000011888 foil Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 235000014676 Phragmites communis Nutrition 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005686 electrostatic field Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 125000003821 2-(trimethylsilyl)ethoxymethyl group Chemical group [H]C([H])([H])[Si](C([H])([H])[H])(C([H])([H])[H])C([H])([H])C(OC([H])([H])[*])([H])[H] 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 238000000441 X-ray spectroscopy Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
- G01T1/2914—Measurement of spatial distribution of radiation
- G01T1/2921—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
- G01T1/2928—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using solid state detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/261—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2441—Semiconductor detectors, e.g. diodes
- H01J2237/24415—X-ray
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2448—Secondary particle detectors
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Measurement Of Radiation (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP11172955A EP2544025A1 (en) | 2011-07-07 | 2011-07-07 | Silicon Drift Detector for use in a charged particle apparatus |
| EP11172955.4 | 2011-07-07 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102866413A CN102866413A (zh) | 2013-01-09 |
| CN102866413B true CN102866413B (zh) | 2016-12-28 |
Family
ID=46319067
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210233116.0A Active CN102866413B (zh) | 2011-07-07 | 2012-07-06 | 用于在带电粒子设备中使用的检测器 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8941072B2 (enExample) |
| EP (2) | EP2544025A1 (enExample) |
| JP (1) | JP5995562B2 (enExample) |
| CN (1) | CN102866413B (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102011080341A1 (de) * | 2011-08-03 | 2013-02-07 | Carl Zeiss Nts Gmbh | Verfahren und Teilchenstrahlgerät zur Erzeugung eines Bildes eines Objekts |
| US9123837B2 (en) * | 2013-05-31 | 2015-09-01 | Oxford Instruments Analytical Oy | Semiconductor detector with radiation shield |
| US10460905B2 (en) * | 2015-09-23 | 2019-10-29 | Kla-Tencor Corporation | Backscattered electrons (BSE) imaging using multi-beam tools |
| ITUB20159390A1 (it) * | 2015-12-24 | 2017-06-24 | Fond Bruno Kessler | Rivelatore a semiconduttore, rivelatore di radiazione e apparecchiatura di rivelazione di radiazione. |
| KR101749920B1 (ko) * | 2016-03-02 | 2017-06-22 | 한국과학기술원 | 실리콘 드리프트 디텍터를 이용한 엑스선 검출용 방사선 검출기 |
| CN105842727B (zh) * | 2016-06-03 | 2018-07-03 | 中国工程物理研究院激光聚变研究中心 | 一种透射式平响应软x射线辐射流测量装置 |
| ES2653767B1 (es) | 2016-07-07 | 2019-03-28 | Consejo Superior Investigacion | Sensor de electrones para microscopia electronica |
| EP3532873B1 (en) * | 2016-10-27 | 2021-06-23 | Shenzhen Xpectvision Technology Co., Ltd. | Dark noise compensation in a radiation detector |
| CN106525028B (zh) * | 2016-10-28 | 2019-05-24 | 北京控制工程研究所 | 用于x射线脉冲星导航敏感器的硅漂移探测器处理电路 |
| EP3385756A1 (en) * | 2017-04-06 | 2018-10-10 | Koninklijke Philips N.V. | Pulse shaper |
| DE102018204683B3 (de) | 2018-03-27 | 2019-08-08 | Carl Zeiss Microscopy Gmbh | Elektronenstrahlmikroskop |
| KR102484833B1 (ko) * | 2018-07-31 | 2023-01-06 | 한국원자력연구원 | 방사성 핵종 분석 시스템 |
| DE102019104710B4 (de) * | 2019-02-25 | 2023-04-27 | Ketek Gmbh | Verfahren zum Betreiben eines Strahlungsdetektionssystems und Strahlungsdetektionssystem |
| EP3842838A1 (en) * | 2019-12-23 | 2021-06-30 | Koninklijke Philips N.V. | Radiological instrument with a pulse shaper circuit |
| CN111584656B (zh) * | 2020-06-15 | 2021-11-09 | 中国科学院微电子研究所 | 漂移探测器及其加工方法 |
| CN114300570B (zh) * | 2021-12-29 | 2024-05-17 | 上海集成电路研发中心有限公司 | 探测器及制造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4149076A (en) * | 1976-04-05 | 1979-04-10 | Albert Richard D | Method and apparatus producing plural images of different contrast range by X-ray scanning |
| CN101281148A (zh) * | 2007-07-27 | 2008-10-08 | 江苏天瑞信息技术有限公司 | 一种高分辨率的半导体核辐射探测器 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3813545A (en) * | 1973-04-12 | 1974-05-28 | Edax Int Inc | X-ray scan area mapping system |
| JPS5329787A (en) * | 1976-08-31 | 1978-03-20 | Kagaku Gijutsucho Hoshasen Igaku Sogo Kenkyusho | Measuring device for radiation |
| FI67961C (fi) * | 1983-08-18 | 1985-06-10 | Valmet Oy | Pulsbredd-pulshoejd-multiplikator i en statisk kwh-maetare |
| JPH03122588A (ja) * | 1989-10-05 | 1991-05-24 | Hitachi Medical Corp | 放射線検出器，データ収集装置およびこれを用いる放射線ｃｔ装置 |
| DE19960243A1 (de) | 1999-12-14 | 2001-07-05 | Infineon Technologies Ag | Bussystem |
| US20050105665A1 (en) * | 2000-03-28 | 2005-05-19 | Lee Grodzins | Detection of neutrons and sources of radioactive material |
| US6541836B2 (en) * | 2001-02-21 | 2003-04-01 | Photon Imaging, Inc. | Semiconductor radiation detector with internal gain |
| WO2006034585A1 (en) * | 2004-09-28 | 2006-04-06 | UNIVERSITé DE SHERBROOKE | Method and system for low radiation computed tomography (ct) |
| US7193216B2 (en) * | 2004-10-22 | 2007-03-20 | Oxford Instruments Analytical Oy | Method and circuit arrangement for compensating for rate dependent change of conversion factor in a drift-type radiation detector and a detector appliance |
| US7187316B1 (en) * | 2006-02-06 | 2007-03-06 | Brookhaven Science Associates, Llc | Method and apparatus for clockless analog-to-digital conversion and peak detection |
| US7411198B1 (en) * | 2006-05-31 | 2008-08-12 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Integrator circuitry for single channel radiation detector |
| US20080001095A1 (en) * | 2006-06-29 | 2008-01-03 | Oliver Richard Astley | Adaptive imaging system |
| US7339175B1 (en) * | 2006-07-28 | 2008-03-04 | Thermo Electron Scientific Instruments Llc | Feedback circuit for output control in a semiconductor X-ray detector |
| US7858946B2 (en) | 2007-01-18 | 2010-12-28 | Bruker Ax Microanalysis Gmbh | Energy dispersive X-ray I-FET SDD detector appliance and a method for pulsed reset neutralization of accumulated charges within an energy dispersive X-ray I-FET SDD detector appliance |
| US7586108B2 (en) | 2007-06-25 | 2009-09-08 | Asml Netherlands B.V. | Radiation detector, method of manufacturing a radiation detector and lithographic apparatus comprising a radiation detector |
| US8138485B2 (en) | 2007-06-25 | 2012-03-20 | Asml Netherlands B.V. | Radiation detector, method of manufacturing a radiation detector, and lithographic apparatus comprising a radiation detector |
| US7511545B1 (en) * | 2007-09-13 | 2009-03-31 | Delphi Technologies, Inc. | Analog duty cycle replicating frequency converter for PWM signals |
| JP5606723B2 (ja) | 2008-12-25 | 2014-10-15 | 日本電子株式会社 | シリコンドリフト型ｘ線検出器 |
| US8198577B2 (en) * | 2009-02-25 | 2012-06-12 | Caeleste Cvba | High dynamic range analog X-ray photon counting |
| DE102009036701A1 (de) * | 2009-08-07 | 2011-03-03 | Carl Zeiss Nts Gmbh | Teilchenstrahlsystem und Untersuchungsverfahren hierzu |
| EP2510536B1 (en) * | 2009-12-07 | 2018-11-28 | Oxford Instruments Nanotechnology Tools Limited | X-ray analyser |
| US8049182B2 (en) * | 2010-01-12 | 2011-11-01 | Oxford Instruments Nanotechnology Tools Limited | Charged particle filter |
| EP2346094A1 (en) | 2010-01-13 | 2011-07-20 | FEI Company | Method of manufacturing a radiation detector |
-
2011
- 2011-07-07 EP EP11172955A patent/EP2544025A1/en not_active Withdrawn
-
2012
- 2012-06-28 EP EP12173975.9A patent/EP2544026B1/en active Active
- 2012-07-06 JP JP2012152136A patent/JP5995562B2/ja active Active
- 2012-07-06 CN CN201210233116.0A patent/CN102866413B/zh active Active
- 2012-07-09 US US13/544,776 patent/US8941072B2/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4149076A (en) * | 1976-04-05 | 1979-04-10 | Albert Richard D | Method and apparatus producing plural images of different contrast range by X-ray scanning |
| CN101281148A (zh) * | 2007-07-27 | 2008-10-08 | 江苏天瑞信息技术有限公司 | 一种高分辨率的半导体核辐射探测器 |
Non-Patent Citations (5)
| Title |
|---|
| C.Fiorini等.A COMS charge preamp * |
| first experimental characterization of rotor:the new switched current VLSI amplifier for x ray spectroscopy with silicon drift detectors;C.Fiorini等;《IEEE TRANSACTIONS ON NUCLEAR SCIENCE》;20000630;第47卷(第3期);全文 * |
| high rate X ray spectroscopy using a silicon drift detector and a charge preamplifer;R.Alberti等;《Nuclear instruments and methods in physics research A》;20060727;第568卷;全文 * |
| ifier for silicon drift detectors with on chip JFET and feedback capacitor.《Nuclear instruments and methods in physics research A》.2006,第568卷第322-328页. * |
| Silicon drift detector with integrated p-JFET for continuous discharge of collected electrons through the gate junction;G.Bertuccio等;《Nuclear instruments and methods in physics research A》;19960801;第377卷(第2期);摘要，第352页右栏倒数第1-5行，第353页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102866413A (zh) | 2013-01-09 |
| US20130099114A1 (en) | 2013-04-25 |
| EP2544026B1 (en) | 2013-12-11 |
| EP2544025A1 (en) | 2013-01-09 |
| JP2013019897A (ja) | 2013-01-31 |
| JP5995562B2 (ja) | 2016-09-21 |
| EP2544026A1 (en) | 2013-01-09 |
| US8941072B2 (en) | 2015-01-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102866413B (zh) | 用于在带电粒子设备中使用的检测器 | |
| JP5102580B2 (ja) | 荷電粒子線応用装置 | |
| US10256071B2 (en) | Quantitative secondary electron detection | |
| US8269180B2 (en) | Method and apparatus for the measurement of signals from radiation sensors | |
| JP6202870B2 (ja) | Ｅｄｓ信号の解析方法 | |
| CA2234684A1 (en) | Semiconductor radiation detector with enhanced charge collection | |
| JP2013019897A5 (enExample) | ||
| US9142702B2 (en) | Semiconductor drift detector and corresponding operating method | |
| KR20200038999A (ko) | 필드 프로그램 가능한 검출기 어레이 | |
| EP3547665A1 (en) | Photon detector | |
| US20220358806A1 (en) | Document authentication | |
| US6815684B2 (en) | Analytical X-ray apparatus provided with a solid state position sensitive X-ray detector | |
| US20080258072A1 (en) | Detector for Ionizing Radiation | |
| US20250087449A1 (en) | Electron Filter | |
| TWI817240B (zh) | 使用x射線螢光進行生物分析物研究的裝置和方法 | |
| Alberti et al. | Performance of different readout topologies of silicon drift detectors in PIXE spectroscopy | |
| CN119404282A (zh) | 半导体带电粒子检测器及其方法 | |
| Finkelstein et al. | Front-side-bombarded metal-plated CMOS electron sensors | |
| Hu et al. | A DAQ system for Micro-Channel Plate detector with wedge and Strip Anode | |
| JP2005166361A (ja) | 荷電粒子の入射位置検出器及びエネルギー分析装置 | |
| JPH05190826A (ja) | 電子検出器 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |