JP5982098B2 - 太陽電池およびその製造方法 - Google Patents
太陽電池およびその製造方法 Download PDFInfo
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- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 33
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 31
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 6
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 2
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- 101100456957 Arabidopsis thaliana MEX1 gene Proteins 0.000 description 20
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- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 101000848675 Homo sapiens DNA-directed RNA polymerase III subunit RPC2 Proteins 0.000 description 1
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Energy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
Description
Claims (31)
- 少数電荷キャリアの有効ライフタイム(τeff)が少なくとも500μsである太陽電池を製造する方法であって、
半導体ウェーハを用意することと、
金属酸化物層を前記表面にALD堆積することによって前記ウェーハの表面を不動態化することであって、前記ALD堆積は、
(i)前記表面を第1の前駆体に暴露することによって前記表面を前記第1の前駆体で被覆するステップと、
(ii)前記表面を第2の前駆体に暴露することによって前記表面を前記第2の前駆体で被覆するステップと、
を順次かつ交互に行うことによって実施されることと、
を含み、
ステップ(i)および(ii)の少なくとも一方は、前記表面の前記被覆が飽和レベルに達する前に停止される方法。 - 前記第1の前駆体は金属前駆体である、および/または前記第2の前駆体は酸化物である、請求項1に記載の方法。
- 前記金属酸化物層は酸化アルミニウム(Al2O3)層である、請求項1乃至2の何れか1項に記載の方法。
- 前記第1の前駆体はトリメチルアルミニウム(TMA)を含む、請求項1乃至3の何れか1項に記載の方法。
- 前記第2の前駆体はオゾン(O3)を含む、請求項1乃至4の何れか1項に記載の方法。
- 前記ウェーハは、シリコンウェーハである、請求項1乃至5の何れか1項に記載の方法。
- 異なる前駆体への前記ウェーハの前記表面の暴露の間に、反応室は不活性ガスでパージされる、請求項1乃至6の何れか1項に記載の方法。
- 前記ウェーハの前記表面は最初に非酸化物前駆体に暴露される、請求項1乃至7の何れか1項に記載の方法。
- ステップ(i)の継続時間は1〜15秒の範囲である、請求項1乃至8の何れか1項に記載の方法。
- ステップ(ii)の継続時間は1〜20秒の範囲である、請求項1乃至9の何れか1項に記載の方法。
- 前記第2の前駆体は、オゾン(O3)を含み、前記ステップ(ii)中に前記ウェーハの前記表面が暴露される前記第2の前駆体は、0.1〜500g/m3の範囲のオゾン濃度を有する、請求項1乃至10の何れか1項に記載の方法。
- 異なる前駆体への前記ウェーハの前記表面の暴露の間に、前記反応室は不活性ガスでパージされ、前記反応室のパージ期間は、1〜15秒の範囲である、請求項1乃至11の何れか1項に記載の方法。
- 前記ALDサイクル時間は、10〜70秒の範囲である、請求項1乃至12の何れか1項に記載の方法。
- 堆積中、前記ウェーハは150〜200℃の範囲内の温度に維持される、請求項1乃至13の何れか1項に記載の方法。
- 反応室で行われ、堆積中の前記反応室の圧力は、100〜200mTorrの範囲である、請求項1乃至14の何れか1項に記載の方法。
- 前記金属酸化物層は10〜30nmの範囲内の厚さを有する、請求項1乃至15の何れか1項に記載の方法。
- 前記ウェーハ表面への前記第1および第2の前駆体のほぼ均一な供給を、堆積中の前記ウェーハの回転によって、保証することをさらに含む、請求項1乃至16の何れか1項に記載の方法。
- 互いに離隔された関係で積み重ねられて配置された1回分のウェーハが前記反応室内に設けられ、前記ウェーハの各々は表面を有し、前記ウェーハの前記表面の全てがステップ(i)中に前記第1の前駆体に暴露され、ステップ(ii)中に前記第2の前駆体に暴露される、請求項1乃至17の何れか1項に記載の方法。
- 前記ステップ(i)の継続時間は、1〜10秒の範囲である、請求項9に記載の方法。
- 前記ステップ(i)の継続時間は、1〜5秒の範囲である、請求項19に記載の方法。
- 前記ステップ(ii)の継続時間は、1〜10秒の範囲である、請求項10に記載の方法。
- 前記ステップ(ii)の継続時間は、1〜5秒の範囲である、請求項21に記載の方法。
- 前記ステップ(ii)中に前記ウェーハの前記表面が暴露される前記第2の前駆体は、100〜300g/m 3 の範囲のオゾン濃度を有する、請求項11に記載の方法。
- 前記ステップ(ii)中に前記ウェーハの前記表面が暴露される前記第2の前駆体は、220g/m 3 のオゾン濃度を有する、請求項23に記載の方法。
- 前記反応室のパージ期間は、1〜10秒の範囲である、請求項12に記載の方法。
- 前記反応室のパージ期間は、1〜5秒の範囲である、請求項25に記載の方法。
- 前記ALDサイクル時間は、10〜25秒の範囲である、請求項13に記載の方法。
- 前記ALDサイクル時間は、10〜15秒の範囲である、請求項27に記載の方法。
- 前記金属酸化物層は、15〜25nmの範囲内の厚さを有する、請求項16に記載の方法。
- 前記不活性ガスは、窒素(N 2 )である、請求項7に記載の方法。
- 前記非酸化物前駆体は、金属前駆体である、請求項8に記載の方法。
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US34705910P | 2010-05-21 | 2010-05-21 | |
US61/347,059 | 2010-05-21 |
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JP2011249813A JP2011249813A (ja) | 2011-12-08 |
JP5982098B2 true JP5982098B2 (ja) | 2016-08-31 |
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US (1) | US8633050B2 (ja) |
EP (3) | EP3664165B1 (ja) |
JP (1) | JP5982098B2 (ja) |
KR (1) | KR101664504B1 (ja) |
CN (1) | CN102254987B (ja) |
ES (3) | ES2758556T3 (ja) |
TW (1) | TWI504012B (ja) |
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