JP5970526B2 - ワイヤソーによって被加工物からウェハをスライスするための方法 - Google Patents
ワイヤソーによって被加工物からウェハをスライスするための方法 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23D—PLANING; SLOTTING; SHEARING; BROACHING; SAWING; FILING; SCRAPING; LIKE OPERATIONS FOR WORKING METAL BY REMOVING MATERIAL, NOT OTHERWISE PROVIDED FOR
- B23D55/00—Sawing machines or sawing devices working with strap saw blades, characterised only by constructional features of particular parts
- B23D55/08—Sawing machines or sawing devices working with strap saw blades, characterised only by constructional features of particular parts of devices for guiding or feeding strap saw blades
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/3003—Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- Microelectronics & Electronic Packaging (AREA)
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- Plasma & Fusion (AREA)
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Description
本発明は、被加工物、好ましくは半導体材料からなる被加工物から複数のウェハを切出すための方法を含む。
ワイヤソー内の被加工物の固定に依存して、ソーイングストリップとともに被加工物の長さの熱誘起変化が、両方向において、または一方向のみにおいて、被加工物の長手方向軸に沿って生じ得る。一例として、ソーイングストリップまたは固定装置の片側が機械フレームに直接突当たるように、かつ(被加工物の長手方向軸の方向における)反対側が膨張を妨げる表面と接触しないように、半導体材料からなる被加工物がワイヤソー内に固定される場合、被加工物の長さの熱誘起変化は、好ましくは、機械フレームと反対方向における片側のみにおいて生じることになる。
Claims (2)
- ワイヤソーのワイヤウェブによって被加工物から複数のウェハを切出すための方法であって、前記ワイヤウェブは多くの平行なワイヤ部分からなり、当該ワイヤウェブは少なくとも2つのワイヤガイドローラ(1)に架設されており、当該ワイヤガイドローラ(1)の各々は、第1の材料からなる、2つの側面および1つの外側面を有するコア(1a)を含み、各コア(1a)は自身の長手方向軸に沿って回転可能に装着され、かつ少なくとも2つの別個のキャビティ(5)を含み、各コア(1a)の当該外側面は、第2の材料からなるジャケット(1b)によって囲まれており、当該ワイヤウェブの当該ワイヤ部分を案内するための平行溝が当該ジャケット(1b)に切込まれており、当該ジャケット(1b)の長さは、温度調節手段で充填される少なくとも1つのキャビティによって熱的に変化し、
当該ジャケット(1b)は、それぞれのクランプリング(4)によって当該ワイヤガイドローラ(1)の片側または両側に固定され、
当該ジャケット(1b)は、少なくとも1つのクランプリング上を横方向に膨張し得る、方法。 - 各キャビティ(5)は、異なる温度を有する温度調節手段で充填される、請求項1に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102013225104.1A DE102013225104B4 (de) | 2013-12-06 | 2013-12-06 | Verfahren zum Abtrennen von Scheiben von einem Werkstück mittels einer Drahtsäge |
DE102013225104.1 | 2013-12-06 |
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Publication Number | Publication Date |
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JP2015112711A JP2015112711A (ja) | 2015-06-22 |
JP5970526B2 true JP5970526B2 (ja) | 2016-08-17 |
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JP2014243066A Active JP5970526B2 (ja) | 2013-12-06 | 2014-12-01 | ワイヤソーによって被加工物からウェハをスライスするための方法 |
Country Status (7)
Country | Link |
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US (1) | US9662804B2 (ja) |
JP (1) | JP5970526B2 (ja) |
KR (1) | KR101660595B1 (ja) |
CN (1) | CN104690840B (ja) |
DE (1) | DE102013225104B4 (ja) |
SG (1) | SG10201407856QA (ja) |
TW (1) | TWI600068B (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI713140B (zh) * | 2019-08-29 | 2020-12-11 | 環球晶圓股份有限公司 | 晶棒固定治具 |
EP3922387A1 (de) | 2020-06-10 | 2021-12-15 | Siltronic AG | Verfahren zum abtrennen einer vielzahl von scheiben mittels einer drahtsäge von werkstücken während einer abfolge von abtrennvorgängen |
EP3922388A1 (de) | 2020-06-10 | 2021-12-15 | Siltronic AG | Verfahren zum abtrennen einer vielzahl von scheiben mittels einer drahtsäge von werkstücken während einer abfolge von abtrennvorgängen |
KR102283879B1 (ko) * | 2021-01-14 | 2021-07-29 | 에스케이씨 주식회사 | 탄화규소 웨이퍼의 제조방법, 탄화규소 웨이퍼 및 웨이퍼 제조용 시스템 |
CN113478665A (zh) * | 2021-07-14 | 2021-10-08 | 山西汇智博科科技发展有限公司 | 一种高精度半导体加工用单线切割机 |
CN115662915B (zh) * | 2022-12-07 | 2023-06-02 | 四川富美达微电子有限公司 | 一种引线框架矫形检测组件及装置 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4655191A (en) * | 1985-03-08 | 1987-04-07 | Motorola, Inc. | Wire saw machine |
DE4123095A1 (de) * | 1991-07-12 | 1993-01-14 | Wacker Chemitronic | Verfahren und vorrichtung zur herstellung von nahtlosen band- und drahtschlaufen, und deren verwendung als trennwerkzeuge in band- und drahtsaegen |
CH687301A5 (fr) * | 1992-01-22 | 1996-11-15 | W S Technologies Ltd | Dispositif de sciage par fil. |
JPH07276219A (ja) * | 1994-04-11 | 1995-10-24 | Tokyo Seimitsu Co Ltd | ワイヤソーの溝付きローラ温度制御装置 |
JP2755907B2 (ja) * | 1994-06-28 | 1998-05-25 | 信越半導体株式会社 | ワイヤソー用溝ローラ |
DE19510625A1 (de) * | 1995-03-23 | 1996-09-26 | Wacker Siltronic Halbleitermat | Drahtsäge und Verfahren zum Abtrennen von Scheiben von einem Werkstück |
JP3609881B2 (ja) * | 1995-10-16 | 2005-01-12 | トーヨーエイテック株式会社 | ワイヤソーにおけるワイヤ位置調節装置 |
CH691037A5 (fr) * | 1996-02-06 | 2001-04-12 | Hct Shaping Systems Sa | Dispositif de sciage par fil. |
DE19717379A1 (de) | 1997-04-24 | 1998-10-29 | Wacker Siltronic Halbleitermat | Drahtsäge und Montagestation für eine Drahtführungsrolle einer Drahtsäge sowie Verfahren zum Auswechseln einer Drahtführungsrolle |
DE19841492A1 (de) * | 1998-09-10 | 2000-03-23 | Wacker Siltronic Halbleitermat | Verfahren und Vorrichtung zum Abtrennen einer Vielzahl von Scheiben von einem sprödharten Werkstück |
JP2002086339A (ja) | 2000-09-08 | 2002-03-26 | Nippei Toyama Corp | ワイヤソー |
DE10122628B4 (de) | 2001-05-10 | 2007-10-11 | Siltronic Ag | Verfahren zum Abtrennen von Scheiben von einem Werkstück |
DE10220640A1 (de) * | 2002-05-08 | 2002-12-19 | Wacker Siltronic Halbleitermat | Verfahren und Vorrichtung zum Abtrennen von Scheiben von einem Werkstück |
JP4816511B2 (ja) * | 2007-03-06 | 2011-11-16 | 信越半導体株式会社 | 切断方法およびワイヤソー装置 |
DE102007019566B4 (de) | 2007-04-25 | 2012-11-29 | Siltronic Ag | Drahtführungsrolle für Drahtsäge |
DE112008003339B4 (de) * | 2007-12-19 | 2022-02-24 | Shin-Etsu Handotai Co., Ltd. | Verfahren zum Zerschneiden eines Werkstücks durch Verwendung einer Drahtsäge |
DE102011005949B4 (de) * | 2011-03-23 | 2012-10-31 | Siltronic Ag | Verfahren zum Abtrennen von Scheiben von einem Werkstück |
DE102011005948B4 (de) * | 2011-03-23 | 2012-10-31 | Siltronic Ag | Verfahren zum Abtrennen von Scheiben von einem Werkstück |
-
2013
- 2013-12-06 DE DE102013225104.1A patent/DE102013225104B4/de active Active
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2014
- 2014-11-26 KR KR1020140166469A patent/KR101660595B1/ko active IP Right Grant
- 2014-11-26 SG SG10201407856QA patent/SG10201407856QA/en unknown
- 2014-12-01 JP JP2014243066A patent/JP5970526B2/ja active Active
- 2014-12-01 TW TW103141582A patent/TWI600068B/zh active
- 2014-12-02 US US14/557,479 patent/US9662804B2/en active Active
- 2014-12-05 CN CN201410737475.9A patent/CN104690840B/zh active Active
Also Published As
Publication number | Publication date |
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DE102013225104B4 (de) | 2019-11-28 |
SG10201407856QA (en) | 2015-07-30 |
DE102013225104A1 (de) | 2015-07-02 |
TW201523715A (zh) | 2015-06-16 |
US9662804B2 (en) | 2017-05-30 |
KR20150066450A (ko) | 2015-06-16 |
JP2015112711A (ja) | 2015-06-22 |
US20150158203A1 (en) | 2015-06-11 |
KR101660595B1 (ko) | 2016-10-10 |
CN104690840A (zh) | 2015-06-10 |
CN104690840B (zh) | 2017-01-18 |
TWI600068B (zh) | 2017-09-21 |
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