JP5530946B2 - 半導体材料から成る結晶から多数のウェハを切断する方法 - Google Patents
半導体材料から成る結晶から多数のウェハを切断する方法 Download PDFInfo
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- JP5530946B2 JP5530946B2 JP2011027710A JP2011027710A JP5530946B2 JP 5530946 B2 JP5530946 B2 JP 5530946B2 JP 2011027710 A JP2011027710 A JP 2011027710A JP 2011027710 A JP2011027710 A JP 2011027710A JP 5530946 B2 JP5530946 B2 JP 5530946B2
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- crystal
- cutting
- wire
- cut
- workpiece
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- 239000013078 crystal Substances 0.000 title claims description 45
- 238000005520 cutting process Methods 0.000 title claims description 33
- 235000012431 wafers Nutrition 0.000 title claims description 32
- 239000004065 semiconductor Substances 0.000 title claims description 17
- 238000000034 method Methods 0.000 title claims description 16
- 239000000463 material Substances 0.000 title claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000009958 sewing Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000006061 abrasive grain Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
Claims (4)
- 長手方向軸線及び横断面を有する半導体材料から成る結晶から多数のウェハを切断する方法において、テーブルに固定された結晶が該テーブルとワイヤソーのワイヤ群との相対移動によって案内され、切断ワイヤによって行われる進入切断が結晶の引上げエッジの領域において行われるか又は切断ワイヤによって行われる退出切断が結晶の引上げエッジの領域において行われるように、前記相対移動が、結晶の長手方向軸線に対して垂直な方向に、切断ワイヤによって形成されたワイヤ群を通過するように方向付けられることを特徴とする、多数のウェハを切断する方法。
- 結晶が、シリコンから成り、結晶方位(100)、(110)又は(111)を有している、請求項1記載の方法。
- 低いワープを有するウェハが望まれる場合、切断ワイヤによって行われる退出切断が引上げエッジの領域において行われるように、結晶がワイヤ群を通過して案内される、請求項1又は2記載の方法。
- 高いワープを有するウェハが望まれる場合、切断ワイヤによって行われる進入切断が引上げエッジの領域において行われるように、結晶がワイヤ群を通過して案内される、請求項1又は2記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102010007459.4 | 2010-02-10 | ||
DE102010007459A DE102010007459B4 (de) | 2010-02-10 | 2010-02-10 | Verfahren zum Abtrennen einer Vielzahl von Scheiben von einem Kristall aus Halbleitermaterial |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011166154A JP2011166154A (ja) | 2011-08-25 |
JP5530946B2 true JP5530946B2 (ja) | 2014-06-25 |
Family
ID=44316620
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011027710A Active JP5530946B2 (ja) | 2010-02-10 | 2011-02-10 | 半導体材料から成る結晶から多数のウェハを切断する方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8844511B2 (ja) |
JP (1) | JP5530946B2 (ja) |
KR (1) | KR101330897B1 (ja) |
CN (1) | CN102152417B (ja) |
DE (1) | DE102010007459B4 (ja) |
SG (1) | SG173965A1 (ja) |
TW (1) | TWI471209B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5881080B2 (ja) * | 2012-02-29 | 2016-03-09 | 株式会社小松製作所 | ワイヤソーおよびワイヤソー用ダクト装置 |
DE102013219468B4 (de) * | 2013-09-26 | 2015-04-23 | Siltronic Ag | Verfahren zum gleichzeitigen Trennen einer Vielzahl von Scheiben von einem Werkstück |
KR101616470B1 (ko) * | 2015-01-16 | 2016-04-29 | 주식회사 엘지실트론 | 잉곳 절단 장치 |
JP6222393B1 (ja) * | 2017-03-21 | 2017-11-01 | 信越半導体株式会社 | インゴットの切断方法 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0761647B2 (ja) * | 1985-06-11 | 1995-07-05 | 日立電線株式会社 | 半導体結晶インゴットのスライス方法 |
US5133332A (en) * | 1989-06-15 | 1992-07-28 | Sumitomo Electric Industries, Ltd. | Diamond tool |
JPH0820384B2 (ja) * | 1991-02-19 | 1996-03-04 | 信越半導体株式会社 | 単結晶のof方位検出方法及び装置 |
DE19519460A1 (de) | 1995-05-26 | 1996-11-28 | Wacker Siltronic Halbleitermat | Drahtsäge und Verfahren zum Abtrennen von Scheiben von einem Werkstück |
JPH09110589A (ja) * | 1995-10-19 | 1997-04-28 | Toshiba Corp | シリコンウェハ及びその製造方法 |
JP3397968B2 (ja) * | 1996-03-29 | 2003-04-21 | 信越半導体株式会社 | 半導体単結晶インゴットのスライス方法 |
JP3625408B2 (ja) * | 1999-03-09 | 2005-03-02 | シャープ株式会社 | マルチワイヤソーを用いた加工方法 |
JP2001261492A (ja) * | 2000-03-22 | 2001-09-26 | Super Silicon Kenkyusho:Kk | 単結晶加工方法及び単結晶加工装置 |
JP2002075924A (ja) * | 2000-08-28 | 2002-03-15 | Shin Etsu Handotai Co Ltd | シリコン単結晶インゴットの加工方法 |
DE10122628B4 (de) | 2001-05-10 | 2007-10-11 | Siltronic Ag | Verfahren zum Abtrennen von Scheiben von einem Werkstück |
DE10128630A1 (de) * | 2001-06-13 | 2003-01-02 | Freiberger Compound Mat Gmbh | Vorrichtung und Verfahren zur Bestimmung der Orientierung einer kristallografischen Ebene relativ zu einer Kristalloberfläche sowie Vorrichtung und Verfahren zum Trennen eines Einkristalls in einer Trennmaschine |
JP2003109917A (ja) | 2001-09-28 | 2003-04-11 | Shin Etsu Handotai Co Ltd | 半導体ウェーハの製造方法、単結晶インゴットの切断方法、切断装置および保持治具 |
KR100526215B1 (ko) | 2003-08-21 | 2005-11-03 | 주식회사 실트론 | 실리콘 단결정 웨이퍼의 제조방법 및 제조장치 |
JP2005231248A (ja) | 2004-02-20 | 2005-09-02 | Naoetsu Electronics Co Ltd | 単結晶切断方法 |
JP4525353B2 (ja) * | 2005-01-07 | 2010-08-18 | 住友電気工業株式会社 | Iii族窒化物基板の製造方法 |
DE102005040343A1 (de) * | 2005-08-25 | 2007-03-01 | Freiberger Compound Materials Gmbh | Verfahren, Vorrichtung und Slurry zum Drahtsägen |
JP4951914B2 (ja) * | 2005-09-28 | 2012-06-13 | 信越半導体株式会社 | (110)シリコンウエーハの製造方法 |
DE102006044366B4 (de) | 2006-09-20 | 2008-12-18 | Siltronic Ag | Verfahren zum Abtrennen einer Vielzahl von Scheiben von einem zylindrischen Werkstück |
DE102006050330B4 (de) | 2006-10-25 | 2009-10-22 | Siltronic Ag | Verfahren zum gleichzeitigen Auftrennen von wenigstens zwei zylindrischen Werkstücken in eine Vielzahl von Scheiben |
DE102006058823B4 (de) | 2006-12-13 | 2017-06-08 | Siltronic Ag | Verfahren zum Abtrennen einer Vielzahl von Scheiben von einem Werkstück |
DE102006058819B4 (de) | 2006-12-13 | 2010-01-28 | Siltronic Ag | Verfahren zum Abtrennen einer Vielzahl von Scheiben von einem Werkstück |
KR100848549B1 (ko) * | 2006-12-18 | 2008-07-25 | 주식회사 실트론 | 실리콘 단결정 성장 방법 |
DE102007019566B4 (de) | 2007-04-25 | 2012-11-29 | Siltronic Ag | Drahtführungsrolle für Drahtsäge |
JP5104830B2 (ja) * | 2008-09-08 | 2012-12-19 | 住友電気工業株式会社 | 基板 |
DE102008051673B4 (de) * | 2008-10-15 | 2014-04-03 | Siltronic Ag | Verfahren zum gleichzeitigen Auftrennen eines Verbundstabs aus Silicium in eine Vielzahl von Scheiben |
-
2010
- 2010-02-10 DE DE102010007459A patent/DE102010007459B4/de active Active
-
2011
- 2011-01-20 US US13/009,957 patent/US8844511B2/en active Active
- 2011-01-27 TW TW100103047A patent/TWI471209B/zh active
- 2011-01-31 KR KR1020110009524A patent/KR101330897B1/ko active IP Right Grant
- 2011-02-09 SG SG2011009115A patent/SG173965A1/en unknown
- 2011-02-10 JP JP2011027710A patent/JP5530946B2/ja active Active
- 2011-02-10 CN CN201110037564.9A patent/CN102152417B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
DE102010007459A1 (de) | 2011-08-11 |
US20110192388A1 (en) | 2011-08-11 |
KR101330897B1 (ko) | 2013-11-18 |
JP2011166154A (ja) | 2011-08-25 |
TW201127586A (de) | 2011-08-16 |
SG173965A1 (en) | 2011-09-29 |
CN102152417B (zh) | 2016-12-21 |
US8844511B2 (en) | 2014-09-30 |
DE102010007459B4 (de) | 2012-01-19 |
CN102152417A (zh) | 2011-08-17 |
KR20110093639A (ko) | 2011-08-18 |
TWI471209B (zh) | 2015-02-01 |
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